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2SD1406
  2SD1406
  2SD1406
 
2SD1406
  2SD1406
  2SD1406
 
2SD1406
  2SD1406
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS3035
HEPS3047 .. HSE131
HSE133 .. IMX2
IMX3 .. K2107
K2107A .. KRA161F
KRA163F .. KRC117
KRC117M .. KRC868E
KRC868U .. KSB772-R
KSB772-Y .. KSC5020-R
KSC5020-Y .. KSE13004
KSE13005 .. KT210B
KT210V .. KT347B
KT347V .. KT644G
KT644V .. KT817G9
KT817V .. KT916B
KT918A .. KTC3103A1
KTC3103B1 .. KTX311T
KTX312T .. MD1131F
MD1132 .. MJ14002
MJ14003 .. MJE13003HT
MJE13003HV .. MJF18008
MJF2955 .. MMBT1015
MMBT123S .. MMBTA56L
MMBTA56LT1 .. MP1550A
MP1551 .. MP800
MP801 .. MPS3866
MPS3900 .. MPSW55
MPSW56 .. MT3002
MT3011 .. NA21ZX
NA21ZY .. NB021FZ
NB021H .. NB213YY
NB213Z .. NKT242L
NKT243 .. NR431DF
NR431DG .. NTE2542
NTE2543 .. P217A
P217B .. PDTA114YT
PDTA114YU .. PMD1702K
PMD1703K .. PTB20030
PTB20031 .. RCA8766D
RCA8766E .. RN1908FE
RN1908FS .. RN2962FE
RN2962FS .. S629T
S630T .. SE8520
SE8521 .. SM3174
SM3176 .. SRC1206UF
SRC1207 .. STD826
STD830CP40 .. T1344
T1346 .. TBF869
TBF870 .. TIP32F
TIP33 .. TIX620
TIX621 .. TN5143
TN5172 .. TR21
TR236 .. UN1224
UN1518 .. UPT211
UPT212 .. ZTX107CL
ZTX107CM .. ZTX549
ZTX550 .. ZXTPS720MC
 
2SD1406 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SD1406 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SD1406

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 25

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 3

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF: 70

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of 2SD1406 transistor: ISO220

2SD1406 Equivalent Transistors - Cross-Reference Search

2SD1406 PDF doc:

1.1. 2sd1406.pdf Size:101K _inchange_semiconductor

2SD1406
2SD1406
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1406 DESCRIPTION · ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25? ·Low collector saturation voltage ·Complement to type 2SB1015 APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector -emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A IB Base current 0.5 A Ta=25? 2.0 PC Collector power dissipation W TC=25? 25 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1406 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

4.1. 2sd1409a.pdf Size:212K _toshiba

2SD1406
2SD1406

4.2. 2sd1408.pdf Size:105K _toshiba

2SD1406
2SD1406
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.3. 2sd1407a.pdf Size:131K _toshiba

2SD1406
2SD1406
2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 100 V Low collector saturation voltage: VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Collector current IC 5 A Base current IB 0.5 A Collector power dissipation PC 30 W (Tc = 25C) JEDEC ? Junction temperature Tj 150 C JEITA ? Storage temperature range Tstg -55 to 150 C TOSHIBA 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, e

4.4. 2sd1400.pdf Size:42K _sanyo

2SD1406
2SD1406

4.5. 2sd1401.pdf Size:43K _sanyo

2SD1406
2SD1406

4.6. 2sd1402.pdf Size:68K _wingshing

2SD1406
2SD1406
NPN TRIPLE DIFFUSED 2SD1402 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) SC-65 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25? PC 50 W ? ? ? Junction Temperature Tj 150 ? ? ? ? ? Storage Temperature Tstg -50~150 ELECTRICAL CHARACTERISTICS (TA=25? ?) ? ? Characteristic Symbol Test Condition Min Typ Max Unit Collector- Emitter Cutoff Current(VBE=0) ICES VCE=800V , RBE=0 1.0 mA Collector Cutoff Current ICBO VCB= 800 V , IE=0 10 A Emitter Cutoff Current IEBO VEB= 4V , IC=0 1.0 mA DC Current Gain hFE VCE= 5V , IC=1A 8 Collector- Emitter Saturation Voltage VCE(sat) IC=4A , IB=0.8A 5.0 V Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276

4.7. 2sd1407.pdf Size:69K _wingshing

2SD1406
2SD1406
2SD1407 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SB1016 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25? PC 25 W ? ? ? Junction Temperature Tj 150 ? ? ? ? Storage Temperature Tstg -50~150 ? ELECTRICAL CHARACTERISTICS (TA=25? ?) ? ? Characteristic Symbol Test Condition Min Typ Max Unit Collector Cutoff Current ICBO VCB= -150V , IE=0 -10 A Emitter Cutoff Current IEBO VEB= -5V , IC=0 -10 A DC Current Gain hFE1 VCE= -5.0V ,IC=-1.0A 100 Collector- Emitter Saturation Voltage VCE(sat) IC=-4A ,IB=-0.4mA -2.0 V Current Gain Bandwidth Product fT VCE= -10V ,IC=-0.5A 60 MHZ Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: w

4.8. 2sd1403.pdf Size:81K _wingshing

2SD1406
2SD1406
Silicon Diffused Power Transistor 2SD1403 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers MT-100 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1500 V CESM Collector-emitter voltage (open base) V - 600 V CEO Collector current (DC) I - 6 A C Collector current peak value I - 12 A CM Total power dissipation T 25 mb P - 120 W tot Collector-emitter saturation voltage I =4.0A; I = 1.0A C B V - 5.0 V CEsat Collector saturation current f = 16KHz - - A I csat Diode forward voltage I = 5.0A 1.6 2.0 V F V F Fall time I = 5.0A; f = 16KHz 0.4 - s Csat t f LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value V = 0V - 1500 V BE V CESM Collector-emitter voltage (open base) - 600 V V C

4.9. 2sd1409.pdf Size:71K _wingshing

2SD1406
2SD1406
2SD1409 SILICON NPN DARLINGTON TRANSISTOR GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. QUICK REFERENCE DATA TO-220F SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 600 V Collector-emitter voltage (open base) VCEO - 400 V Collector current (DC) IC - 6 A Collector current peak value ICM - 12 A Total power dissipation Tmb 25 Ptot - 25 W Collector-emitter saturation voltage IC = 4.0A; IB = 0.04A VCEsat - 2.0 V Collector saturation current f=16KHZ A Icsat Diode forward voltage IF=3A 2.5 5 V VF Fall time IC=4.0A,IB1=-IB2=0.04A,VCC=100V 6.0 s tf LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V - 600 V VCESM Collector-emitter voltage (open base) - 400 V VCEO Collector current (DC) - 6 A IC Collector current peak value - 12 A ICM Base current (DC) - 1 A IB Base curren

4.10. 2sd1409.pdf Size:105K _jmnic

2SD1406
2SD1406
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 DESCRIPTION ·With TO-220F package ·High DC current gain ·Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS ·Igniter applications ·High volitage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector -emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A IB Base current 1 A TC=25? 25 PC Collector power dissipation W Ta=25? 2.0 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collec

4.11. 2sd1402.pdf Size:88K _inchange_semiconductor

2SD1406
2SD1406
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1402 DESCRIPTION ·With TO-3PN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For CRT horizontal output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A PC Collector power dissipation TC=25? 120 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1402 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustai

4.12. 2sd1404.pdf Size:93K _inchange_semiconductor

2SD1406
2SD1406
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1404 DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode APPLICATIONS ·B/W TV horizontal deflection output applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IBB Base Current-Continuous 2 A Collector Power Dissipation 2 Ta=25? PC W Collector Power Dissipation 25 TC=25? Tj Junction Temperature 150 ? Storage Ttemperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1404 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN T

4.13. 2sd1400.pdf Size:253K _inchange_semiconductor

2SD1406
2SD1406
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1400 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 2.5 A ICP Collector Current-Pulse 10 A Collector Power Dissipation PC @ TC= 25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1400 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 1500 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100m

4.14. 2sd1407.pdf Size:162K _inchange_semiconductor

2SD1406
2SD1406
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1407 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High breakdown voltage Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB1016 APPLICATIONS Ў¤ Power amplifier applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector -emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 100 100 5 5 0.5 UNIT V V V A A W Ўж Ўж Emitter-base voltage Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 30 150 -55~150

4.15. 2sd1403.pdf Size:88K _inchange_semiconductor

2SD1406
2SD1406
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1403 DESCRIPTION ·With TO-3PN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For CRT horizontal output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A PC Collector power dissipation TC=25? 120 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1403 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustai

4.16. 2sd1408.pdf Size:263K _inchange_semiconductor

2SD1406
2SD1406
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1408 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Complement to Type 2SB1017 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IBB Base Current-Continuous 0.4 A Collector Power Dissipation PC @ TC=25? 25 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1408 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage

4.17. 2sd1409.pdf Size:119K _inchange_semiconductor

2SD1406
2SD1406
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High DC current gain Ў¤ DARLINGTON APPLICATIONS Ў¤ Igniter applications Ў¤ High volitage switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB Collector-base voltage PARAMETER INC Collector -emitter voltage Emitter-base voltage ANG H MIC E SE Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 600 400 5 6 1 UNIT V V V A A Collector current Base current TC=25Ўж 25 W 2.0 150 -55~150 Ўж Ўж PC Collector power dissipation Ta=25Ўж Tj Tstg Junction temperature Storage temperature

See also transistors datasheet: 2SD1402 , 2SD1402-O , 2SD1403 , 2SD1404 , 2SD1405 , 2SD1405-BL , 2SD1405-GR , 2SD1405-V , KT829A , 2SD1406-G , 2SD1406-GR , 2SD1406-O , 2SD1406-Y , 2SD1407 , 2SD1407-G , 2SD1407-O , 2SD1407-R .

Keywords

 2SD1406 Datasheet  2SD1406 Datenblatt  2SD1406 RoHS  2SD1406 Distributor
 2SD1406 Application Notes  2SD1406 Component  2SD1406 Circuit  2SD1406 Schematic
 2SD1406 Equivalent  2SD1406 Cross Reference  2SD1406 Data Sheet  2SD1406 Fiche Technique

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