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2SD1406 Transistor (IC) Datasheet. Cross Reference Search. 2SD1406 Equivalent

Type Designator: 2SD1406

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 25

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 3

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF: 70

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of 2SD1406 transistor: ISO220

2SD1406 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1406 PDF:

1.1. 2sd1406.pdf Size:101K _inchange_semiconductor

2SD1406
2SD1406

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1406 DESCRIPTION · ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25? ·Low collector saturation voltage ·Complement to type 2SB1015 APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa)

4.1. 2sd1408.pdf Size:105K _toshiba

2SD1406
2SD1406

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.2. 2sd1407a.pdf Size:131K _toshiba

2SD1406
2SD1406

2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 100 V Low collector saturation voltage: VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emi

4.3. 2sd1409a.pdf Size:212K _toshiba

2SD1406
2SD1406

4.4. 2sd1400.pdf Size:42K _sanyo

2SD1406
2SD1406

4.5. 2sd1401.pdf Size:43K _sanyo

2SD1406
2SD1406

4.6. 2sd1409.pdf Size:71K _wingshing

2SD1406
2SD1406

2SD1409 SILICON NPN DARLINGTON TRANSISTOR GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. QUICK REFERENCE DATA TO-220F SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 600 V Collector-emitter voltage (open base) VCEO - 400 V Collector current (DC) IC -

4.7. 2sd1407.pdf Size:69K _wingshing

2SD1406
2SD1406

2SD1407 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SB1016 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25? PC 25 W ? ? ? Junct

4.8. 2sd1403.pdf Size:81K _wingshing

2SD1406
2SD1406

Silicon Diffused Power Transistor 2SD1403 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers MT-100 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1500 V CESM

4.9. 2sd1402.pdf Size:68K _wingshing

2SD1406
2SD1406

NPN TRIPLE DIFFUSED 2SD1402 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) SC-65 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current (

4.10. 2sd1409.pdf Size:105K _jmnic

2SD1406
2SD1406

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 DESCRIPTION ·With TO-220F package ·High DC current gain ·Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS ·Igniter applications ·High volitage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol

4.11. 2sd1408.pdf Size:263K _inchange_semiconductor

2SD1406
2SD1406

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1408 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Complement to Type 2SB1017 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT

4.12. 2sd1409.pdf Size:119K _inchange_semiconductor

2SD1406
2SD1406

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High DC current gain Ў¤ DARLINGTON APPLICATIONS Ў¤ Igniter applications Ў¤ High volitage switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB Collector-bas

4.13. 2sd1404.pdf Size:93K _inchange_semiconductor

2SD1406
2SD1406

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1404 DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode APPLICATIONS ·B/W TV horizontal deflection output applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO C

4.14. 2sd1407.pdf Size:162K _inchange_semiconductor

2SD1406
2SD1406

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1407 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High breakdown voltage Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB1016 APPLICATIONS Ў¤ Power amplifier applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION Absolute maximum

4.15. 2sd1403.pdf Size:88K _inchange_semiconductor

2SD1406
2SD1406

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1403 DESCRIPTION ·With TO-3PN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For CRT horizontal output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol

4.16. 2sd1400.pdf Size:253K _inchange_semiconductor

2SD1406
2SD1406

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1400 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEB

4.17. 2sd1402.pdf Size:88K _inchange_semiconductor

2SD1406
2SD1406

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1402 DESCRIPTION ·With TO-3PN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For CRT horizontal output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol

See also transistors datasheet: 2SD1402 , 2SD1402O , 2SD1403 , 2SD1404 , 2SD1405 , 2SD1405BL , 2SD1405GR , 2SD1405V , KT829A , 2SD1406G , 2SD1406GR , 2SD1406O , 2SD1406Y , 2SD1407 , 2SD1407G , 2SD1407O , 2SD1407R .

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