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2SD1406
  2SD1406
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  2SD1406
 
2SD1406
  2SD1406
  2SD1406
  2SD1406
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC536SP
2SC537 .. 2SC5819
2SC582 .. 2SC690M
2SC691 .. 2SC90
2SC900 .. 2SD1065S
2SD1066 .. 2SD1257A
2SD1258 .. 2SD1446
2SD1447 .. 2SD1667
2SD1667Q .. 2SD1854
2SD1855 .. 2SD21
2SD2100 .. 2SD2449
2SD2453 .. 2SD365A
2SD366 .. 2SD594
2SD596 .. 2SD794-O
2SD794-R .. 2STF1550
2STF2220 .. 40261
40262 .. 40837
40850 .. A747A
A747B .. ACY23
ACY23V .. AF170
AF171 .. ASY85
ASY86 .. BC158C
BC158V .. BC250
BC250A .. BC340-6
BC341 .. BC487
BC487-18 .. BC817-16
BC817-16L .. BC860
BC860A .. BCW14
BCW14K .. BCW98B
BCW98C .. BCY72QF
BCY76 .. BD233
BD233-10 .. BD371D-6
BD372 .. BD618
BD619 .. BD952F
BD953 .. BDW24
BDW24A .. BDY12-10
BDY12-16 .. BF241C
BF241D .. BF432
BF432L .. BF870EA
BF870S .. BFQ38S
BFQ39 .. BFS505
BFS51 .. BFV97N
BFV98 .. BFY86A
BFY86B .. BLY17
BLY17A .. BSS82BL
BSS82C .. BSX61
BSX62 .. BTB9435L3
BTC1510E3 .. BU209A
BU210 .. BUF405AFI
BUF405AFP .. BUS21C
BUS21D .. BUW74
BUW75 .. BUY78
BUY79 .. CD9012GHI
CD9012J .. CIL148B
CIL148C .. CL155B
CL155C .. CPS1545B
CPS1550B .. CSA952M
CSA952M9AW .. CSC2611
CSC2655 .. CTP1033
CTP1034 .. D29J10
D29J2 .. D42CU11
D42CU12 .. D64TS5
D64VE3 .. DT34-300
DT34-400 .. DTC014EUB
DTC014YEB .. DTL3425
DTL3426 .. ECG2327
ECG2328 .. ED1601D
ED1601E .. ET1550
ET1551 .. FE4016
FE4017 .. FMC4A
FMC5A .. FPC1317
FPC1318 .. FXT551
FXT551SM .. GE10022
GE10023 .. GET2484
GET2904 .. GSDR10025I
GSDR15020 .. GT405B
GT405G .. HEPS3021
HEPS3024 .. HSE125
HSE127 .. IMT1A
IMT2A .. K2105
K2105A .. KRA122S
KRA152F .. KRC114
KRC114M .. KRC864F
KRC864U .. KSB744A-O
KSB744A-R .. KSC3953
KSC3953C .. KSD986
KSD986-O .. KT209L
KT209M .. KT343B
KT343V .. KT640B-2
KT640V-2 .. KT817A9
KT817B .. KT9144A9
KT9145A9 .. KTC2983D
KTC2983L .. KTX215U
KTX216U .. MD1128
MD1129 .. MJ13332
MJ13333 .. MJE13003-P
MJE13003B .. MJF16206
MJF16210 .. MMBR941BLT3
MMBR941LT1 .. MMBTA43LT1
MMBTA44 .. MP1547
MP1547A .. MP601
MP601A .. MPS3710
MPS3711 .. MPSW3725
MPSW42 .. MT0492
MT0493 .. NA21YX
NA21YY .. NB021FJ
NB021FK .. NB213XY
NB213Y .. NKT224
NKT225 .. NR421FE
NR421FF .. NTE2426
NTE2427 .. P213A
P213B .. PDTA113ZE
PDTA113ZM .. PMD13K40
PMD13K60 .. PT902
PT902-1 .. RCA6341
RCA8203 .. RN1905
RN1905AFS .. RN2911
RN2911AFS .. S2818
S2818A .. SE6023
SE6062 .. SM2176
SM2177 .. SRC1205E
SRC1205EF .. STD1802
STD1802T4-A .. T1250
T1251 .. TBC557
TBC558 .. TIP31C
TIP31CE3 .. TIX3034
TIX3035 .. TN5129
TN5130 .. TR01042
TR01062-1 .. UN1216S
UN1217Q .. UP1753
UP1851 .. ZTX1053A
ZTX1055A .. ZTX531
ZTX531K .. ZXTPS720MC
 
2SD1406 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SD1406 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SD1406

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 25

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 3

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 3

Collector capacitance (Cc), pF: 70

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of 2SD1406 transistor: ISO220

2SD1406 Equivalent Transistors - Cross-Reference Search

2SD1406 PDF doc:

1.1. 2sd1406.pdf Size:101K _inchange_semiconductor

2SD1406
2SD1406
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1406 DESCRIPTION · ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25? ·Low collector saturation voltage ·Complement to type 2SB1015 APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector -emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A IB Base current 0.5 A Ta=25? 2.0 PC Collector power dissipation W TC=25? 25 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1406 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

4.1. 2sd1409a.pdf Size:212K _toshiba

2SD1406
2SD1406

4.2. 2sd1408.pdf Size:105K _toshiba

2SD1406
2SD1406
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.3. 2sd1407a.pdf Size:131K _toshiba

2SD1406
2SD1406
2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 100 V Low collector saturation voltage: VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Collector current IC 5 A Base current IB 0.5 A Collector power dissipation PC 30 W (Tc = 25C) JEDEC ? Junction temperature Tj 150 C JEITA ? Storage temperature range Tstg -55 to 150 C TOSHIBA 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, e

4.4. 2sd1400.pdf Size:42K _sanyo

2SD1406
2SD1406

4.5. 2sd1401.pdf Size:43K _sanyo

2SD1406
2SD1406

4.6. 2sd1402.pdf Size:68K _wingshing

2SD1406
2SD1406
NPN TRIPLE DIFFUSED 2SD1402 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) SC-65 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25? PC 50 W ? ? ? Junction Temperature Tj 150 ? ? ? ? ? Storage Temperature Tstg -50~150 ELECTRICAL CHARACTERISTICS (TA=25? ?) ? ? Characteristic Symbol Test Condition Min Typ Max Unit Collector- Emitter Cutoff Current(VBE=0) ICES VCE=800V , RBE=0 1.0 mA Collector Cutoff Current ICBO VCB= 800 V , IE=0 10 A Emitter Cutoff Current IEBO VEB= 4V , IC=0 1.0 mA DC Current Gain hFE VCE= 5V , IC=1A 8 Collector- Emitter Saturation Voltage VCE(sat) IC=4A , IB=0.8A 5.0 V Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276

4.7. 2sd1407.pdf Size:69K _wingshing

2SD1406
2SD1406
2SD1407 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SB1016 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25? PC 25 W ? ? ? Junction Temperature Tj 150 ? ? ? ? Storage Temperature Tstg -50~150 ? ELECTRICAL CHARACTERISTICS (TA=25? ?) ? ? Characteristic Symbol Test Condition Min Typ Max Unit Collector Cutoff Current ICBO VCB= -150V , IE=0 -10 A Emitter Cutoff Current IEBO VEB= -5V , IC=0 -10 A DC Current Gain hFE1 VCE= -5.0V ,IC=-1.0A 100 Collector- Emitter Saturation Voltage VCE(sat) IC=-4A ,IB=-0.4mA -2.0 V Current Gain Bandwidth Product fT VCE= -10V ,IC=-0.5A 60 MHZ Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: w

4.8. 2sd1403.pdf Size:81K _wingshing

2SD1406
2SD1406
Silicon Diffused Power Transistor 2SD1403 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers MT-100 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1500 V CESM Collector-emitter voltage (open base) V - 600 V CEO Collector current (DC) I - 6 A C Collector current peak value I - 12 A CM Total power dissipation T 25 mb P - 120 W tot Collector-emitter saturation voltage I =4.0A; I = 1.0A C B V - 5.0 V CEsat Collector saturation current f = 16KHz - - A I csat Diode forward voltage I = 5.0A 1.6 2.0 V F V F Fall time I = 5.0A; f = 16KHz 0.4 - s Csat t f LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value V = 0V - 1500 V BE V CESM Collector-emitter voltage (open base) - 600 V V C

4.9. 2sd1409.pdf Size:71K _wingshing

2SD1406
2SD1406
2SD1409 SILICON NPN DARLINGTON TRANSISTOR GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. QUICK REFERENCE DATA TO-220F SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 600 V Collector-emitter voltage (open base) VCEO - 400 V Collector current (DC) IC - 6 A Collector current peak value ICM - 12 A Total power dissipation Tmb 25 Ptot - 25 W Collector-emitter saturation voltage IC = 4.0A; IB = 0.04A VCEsat - 2.0 V Collector saturation current f=16KHZ A Icsat Diode forward voltage IF=3A 2.5 5 V VF Fall time IC=4.0A,IB1=-IB2=0.04A,VCC=100V 6.0 s tf LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V - 600 V VCESM Collector-emitter voltage (open base) - 400 V VCEO Collector current (DC) - 6 A IC Collector current peak value - 12 A ICM Base current (DC) - 1 A IB Base curren

4.10. 2sd1409.pdf Size:105K _jmnic

2SD1406
2SD1406
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 DESCRIPTION ·With TO-220F package ·High DC current gain ·Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS ·Igniter applications ·High volitage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector -emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A IB Base current 1 A TC=25? 25 PC Collector power dissipation W Ta=25? 2.0 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collec

4.11. 2sd1402.pdf Size:88K _inchange_semiconductor

2SD1406
2SD1406
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1402 DESCRIPTION ·With TO-3PN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For CRT horizontal output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A PC Collector power dissipation TC=25? 120 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1402 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustai

4.12. 2sd1404.pdf Size:93K _inchange_semiconductor

2SD1406
2SD1406
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1404 DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode APPLICATIONS ·B/W TV horizontal deflection output applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IBB Base Current-Continuous 2 A Collector Power Dissipation 2 Ta=25? PC W Collector Power Dissipation 25 TC=25? Tj Junction Temperature 150 ? Storage Ttemperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1404 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN T

4.13. 2sd1400.pdf Size:253K _inchange_semiconductor

2SD1406
2SD1406
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1400 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 2.5 A ICP Collector Current-Pulse 10 A Collector Power Dissipation PC @ TC= 25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1400 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 1500 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100m

4.14. 2sd1407.pdf Size:162K _inchange_semiconductor

2SD1406
2SD1406
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1407 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High breakdown voltage Ў¤ Low collector saturation voltage Ў¤ Complement to type 2SB1016 APPLICATIONS Ў¤ Power amplifier applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector -emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 100 100 5 5 0.5 UNIT V V V A A W Ўж Ўж Emitter-base voltage Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 30 150 -55~150

4.15. 2sd1403.pdf Size:88K _inchange_semiconductor

2SD1406
2SD1406
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1403 DESCRIPTION ·With TO-3PN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For CRT horizontal output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A PC Collector power dissipation TC=25? 120 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1403 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustai

4.16. 2sd1408.pdf Size:263K _inchange_semiconductor

2SD1406
2SD1406
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1408 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Complement to Type 2SB1017 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IBB Base Current-Continuous 0.4 A Collector Power Dissipation PC @ TC=25? 25 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1408 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage

4.17. 2sd1409.pdf Size:119K _inchange_semiconductor

2SD1406
2SD1406
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High DC current gain Ў¤ DARLINGTON APPLICATIONS Ў¤ Igniter applications Ў¤ High volitage switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB Collector-base voltage PARAMETER INC Collector -emitter voltage Emitter-base voltage ANG H MIC E SE Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 600 400 5 6 1 UNIT V V V A A Collector current Base current TC=25Ўж 25 W 2.0 150 -55~150 Ўж Ўж PC Collector power dissipation Ta=25Ўж Tj Tstg Junction temperature Storage temperature

See also transistors datasheet: 2SD1402 , 2SD1402-O , 2SD1403 , 2SD1404 , 2SD1405 , 2SD1405-BL , 2SD1405-GR , 2SD1405-V , KT829A , 2SD1406-G , 2SD1406-GR , 2SD1406-O , 2SD1406-Y , 2SD1407 , 2SD1407-G , 2SD1407-O , 2SD1407-R .

Keywords

 2SD1406 Datasheet  2SD1406 Datenblatt  2SD1406 RoHS  2SD1406 Distributor
 2SD1406 Application Notes  2SD1406 Component  2SD1406 Circuit  2SD1406 Schematic
 2SD1406 Equivalent  2SD1406 Cross Reference  2SD1406 Data Sheet  2SD1406 Fiche Technique

 

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