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2SD1414
  2SD1414
  2SD1414
 
2SD1414
  2SD1414
  2SD1414
 
2SD1414
  2SD1414
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2SD1414 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SD1414 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SD1414

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), 掳C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 4000

Noise Figure, dB: -

Package of 2SD1414 transistor: ISO220

2SD1414 Equivalent Transistors - Cross-Reference Search

2SD1414 PDF doc:

1.1. 2sd1414.pdf Size:62K _st

2SD1414
2SD1414
SD1414 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS .836 MHz .12.5 VOLTS .COMMON BASE .P 45 W MIN. WITH 4.7 dB GAIN = OUT .230 6LFL (M142) epoxy sealed ORDER CODE BRANDING SD1414 SD1414 PIN CONNECTION DESCRIPTION The SD1414 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier ap- plications in the 806 - 866 MHz frequency range. Internal input matching and common base con- figuration assure optimum gain and efficiency 1. Collector 3. Base across the entire frequency band. The SD1414 2. Emitter withstands infinite VSWR at rated power output. ABSOLUTE MAXIMUM RATINGS (T = 25癈) case Symbol Parameter Value Unit V Collector-Base Voltage 36 V CBO V Collector-Emitter Voltage 18 V CEO V Collector-Emitter Voltage 36 V CES V Emitter-Base Voltage 4.0 V EBO I Device Current 9.0 A C P Power Dissipation 150 W DISS 癈 TJ Junction Temperature +200 癈 T Storage Temperature - 65 to +150 STG THERMAL DATA R Junction-Case The

1.2. 2sd1414.pdf Size:68K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1414 DESCRIPTION 路With TO-220Fa package 路High DC current gain 路Low saturation voltage 路Complement to type 2SB1024 路DARLINGTON APPLICATIONS 路Power amplifier and switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A IB Base current 0.5 A PC Collector power dissipation TC=25? 20 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1414 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

4.1. 2sd1410a.pdf Size:183K _toshiba

2SD1414
2SD1414

4.2. 2sd1411a.pdf Size:216K _toshiba

2SD1414
2SD1414

4.3. 2sd1417.pdf Size:38K _toshiba

2SD1414
2SD1414

4.4. 2sd1415.pdf Size:183K _toshiba

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2SD1414

4.5. 2sd1415a.pdf Size:213K _toshiba

2SD1414
2SD1414

4.6. 2sd1411.pdf Size:184K _toshiba

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2SD1414

4.7. 2sd1410.pdf Size:163K _toshiba

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2SD1414

4.8. 2sd1412a.pdf Size:216K _toshiba

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2SD1414

4.9. 2sd1412.pdf Size:184K _toshiba

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2SD1414

4.10. rej03g0787_2sd1418ds-1.pdf Size:112K _renesas

2SD1414
2SD1414
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

4.11. rej03g0788_2sd1419ds-1.pdf Size:112K _renesas

2SD1414
2SD1414
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

4.12. 2sd1419.pdf Size:25K _hitachi

2SD1414
2SD1414
2SD1419 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1026 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1419 Absolute Maximum Ratings (Ta = 25癈) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current iC(peak)*1 2A Collector power dissipation PC*2 1W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW ? 10 ms, Duty cycle ? 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25癈) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 120 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 100 V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 5 V IE = 10 A, IC = 0 voltage Collector cutoff current I

4.13. 2sd1418.pdf Size:31K _hitachi

2SD1414
2SD1414
2SD1418 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1025 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1418 Absolute Maximum Ratings (Ta = 25癈) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current iC(peak)*1 2A Collector power dissipation PC*2 1W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW ? 10 ms, Duty cycle ? 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25癈) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 120 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 80 V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 5 V IE = 10 A, IC = 0 voltage Collector cutoff current ICB

4.14. 2sd1417.pdf Size:70K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1417 DESCRIPTION 路With TO-220Fa package 路High DC current gain 路Low saturation voltage 路Complement to type 2SB1022 路DARLINGTON APPLICATIONS 路Power amplifier and switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector -emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A IB Base current 0.2 A TC=25? 30 PC Collector power dissipation W Ta=25? 2.0 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1417 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER

4.15. 2sd1415.pdf Size:68K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415 DESCRIPTION 路With TO-220Fa package 路High DC current gain 路Low saturation voltage 路Complement to type 2SB1020 路DARLINGTON APPLICATIONS 路High power switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A IB Base current 0.2 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MA

4.16. 2sd1415a.pdf Size:83K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415A DESCRIPTION 路With TO-220F package 路High DC current gain 路Low saturation voltage 路DARLINGTON APPLICATIONS 路High power switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector -emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 7 A ICP Collector current peak 10 A IB Base current 0.7 A TC=25? 25 PC Collector power dissipation W Ta=25? 2.0 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415A CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER COND

4.17. 2sd1411.pdf Size:171K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1411 DESCRIPTION 袔陇 With TO-220Fa package 袔陇 Low saturation voltage 袔陇 Complementary to 2SB1018 APPLICATIONS 袔陇 Power amplifier applications 袔陇 High current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25袔卸 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER CHA IN Collector current Base current Collector-base voltage Collector -emitter voltage E SEM NG Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 100 80 5 7 1 UNIT V V V A A Emitter-base voltage TC=25袔卸 PC Collector power dissipation Ta=25袔卸 Tj Tstg Junction temperature Storage temperature 30 W 2.0 150 -55~150 袔卸 袔卸

4.18. 2sd1410.pdf Size:177K _inchange_semiconductor

2SD1414
2SD1414
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 DESCRIPTION 路Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) 路Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A 路High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS 路Igniter applications 路High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IBB Base Current-Continuous 1 A Collector Power Dissipation 2.0 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 ELECTRICAL CHARACTERISTICS TC=25? unles

4.19. 2sd1416.pdf Size:229K _inchange_semiconductor

2SD1414
2SD1414
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1416 DESCRIPTION 路Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) 路Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A 路High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V 路Complement to Type 2SB1021 APPLICATIONS 路Hammer driver,pulse motor drive applications. 路High power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IBB Base Current-Continuous 0.2 A Collector Power Dissipation PC @ TC=25? 30 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1416 ELECTRICAL CHARACTERISTIC

4.20. 2sd1413.pdf Size:68K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1413 DESCRIPTION 路With TO-220Fa package 路High DC current gain 路Low saturation voltage 路Complement to type 2SB1023 路DARLINGTON APPLICATIONS 路Power amplifier and switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector -emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3 A IB Base current 0.5 A PC Collector power dissipation TC=25? 20 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1413 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

4.21. 2sd1412.pdf Size:272K _inchange_semiconductor

2SD1414
2SD1414
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION 路Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A 路Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) 路Complement to Type 2SB1019 APPLICATIONS 路High current switching applications. 路Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IBB Base Current-Continuous 1 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1412 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER

See also transistors datasheet: 2SD1410 , 2SD1411 , 2SD1411-O , 2SD1411-Y , 2SD1412 , 2SD1412-O , 2SD1412-Y , 2SD1413 , BD139 , 2SD1415 , 2SD1416 , 2SD1417 , 2SD1418 , 2SD1419 , 2SD142 , 2SD1420 , 2SD1421 .

Keywords

 2SD1414 Datasheet  2SD1414 Datenblatt  2SD1414 RoHS  2SD1414 Distributor
 2SD1414 Application Notes  2SD1414 Component  2SD1414 Circuit  2SD1414 Schematic
 2SD1414 Equivalent  2SD1414 Cross Reference  2SD1414 Data Sheet  2SD1414 Fiche Technique

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