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2SD1414
  2SD1414
  2SD1414
 
2SD1414
  2SD1414
  2SD1414
 
2SD1414
  2SD1414
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SD1414 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SD1414 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SD1414

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), 掳C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 4000

Noise Figure, dB: -

Package of 2SD1414 transistor: ISO220

2SD1414 Equivalent Transistors - Cross-Reference Search

2SD1414 PDF doc:

1.1. 2sd1414.pdf Size:62K _st

2SD1414
2SD1414
SD1414 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS .836 MHz .12.5 VOLTS .COMMON BASE .P 45 W MIN. WITH 4.7 dB GAIN = OUT .230 6LFL (M142) epoxy sealed ORDER CODE BRANDING SD1414 SD1414 PIN CONNECTION DESCRIPTION The SD1414 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier ap- plications in the 806 - 866 MHz frequency range. Internal input matching and common base con- figuration assure optimum gain and efficiency 1. Collector 3. Base across the entire frequency band. The SD1414 2. Emitter withstands infinite VSWR at rated power output. ABSOLUTE MAXIMUM RATINGS (T = 25癈) case Symbol Parameter Value Unit V Collector-Base Voltage 36 V CBO V Collector-Emitter Voltage 18 V CEO V Collector-Emitter Voltage 36 V CES V Emitter-Base Voltage 4.0 V EBO I Device Current 9.0 A C P Power Dissipation 150 W DISS 癈 TJ Junction Temperature +200 癈 T Storage Temperature - 65 to +150 STG THERMAL DATA R Junction-Case The

1.2. 2sd1414.pdf Size:68K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1414 DESCRIPTION 路With TO-220Fa package 路High DC current gain 路Low saturation voltage 路Complement to type 2SB1024 路DARLINGTON APPLICATIONS 路Power amplifier and switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A IB Base current 0.5 A PC Collector power dissipation TC=25? 20 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1414 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

4.1. 2sd1410a.pdf Size:183K _toshiba

2SD1414
2SD1414

4.2. 2sd1411a.pdf Size:216K _toshiba

2SD1414
2SD1414

4.3. 2sd1410.pdf Size:163K _toshiba

2SD1414
2SD1414

4.4. 2sd1415.pdf Size:183K _toshiba

2SD1414
2SD1414

4.5. 2sd1412a.pdf Size:216K _toshiba

2SD1414
2SD1414

4.6. 2sd1415a.pdf Size:213K _toshiba

2SD1414
2SD1414

4.7. 2sd1417.pdf Size:38K _toshiba

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2SD1414

4.8. 2sd1412.pdf Size:184K _toshiba

2SD1414
2SD1414

4.9. 2sd1411.pdf Size:184K _toshiba

2SD1414
2SD1414

4.10. rej03g0787_2sd1418ds-1.pdf Size:112K _renesas

2SD1414
2SD1414
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

4.11. rej03g0788_2sd1419ds-1.pdf Size:112K _renesas

2SD1414
2SD1414
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

4.12. 2sd1418.pdf Size:31K _hitachi

2SD1414
2SD1414
2SD1418 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1025 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1418 Absolute Maximum Ratings (Ta = 25癈) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current iC(peak)*1 2A Collector power dissipation PC*2 1W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW ? 10 ms, Duty cycle ? 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25癈) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 120 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 80 V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 5 V IE = 10 A, IC = 0 voltage Collector cutoff current ICB

4.13. 2sd1419.pdf Size:25K _hitachi

2SD1414
2SD1414
2SD1419 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1026 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1419 Absolute Maximum Ratings (Ta = 25癈) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current iC(peak)*1 2A Collector power dissipation PC*2 1W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW ? 10 ms, Duty cycle ? 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25癈) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 120 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 100 V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 5 V IE = 10 A, IC = 0 voltage Collector cutoff current I

4.14. 2sd1410.pdf Size:177K _inchange_semiconductor

2SD1414
2SD1414
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 DESCRIPTION 路Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) 路Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A 路High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS 路Igniter applications 路High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IBB Base Current-Continuous 1 A Collector Power Dissipation 2.0 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 ELECTRICAL CHARACTERISTICS TC=25? unles

4.15. 2sd1413.pdf Size:68K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1413 DESCRIPTION 路With TO-220Fa package 路High DC current gain 路Low saturation voltage 路Complement to type 2SB1023 路DARLINGTON APPLICATIONS 路Power amplifier and switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector -emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3 A IB Base current 0.5 A PC Collector power dissipation TC=25? 20 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1413 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

4.16. 2sd1416.pdf Size:229K _inchange_semiconductor

2SD1414
2SD1414
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1416 DESCRIPTION 路Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) 路Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A 路High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V 路Complement to Type 2SB1021 APPLICATIONS 路Hammer driver,pulse motor drive applications. 路High power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IBB Base Current-Continuous 0.2 A Collector Power Dissipation PC @ TC=25? 30 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1416 ELECTRICAL CHARACTERISTIC

4.17. 2sd1415.pdf Size:68K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415 DESCRIPTION 路With TO-220Fa package 路High DC current gain 路Low saturation voltage 路Complement to type 2SB1020 路DARLINGTON APPLICATIONS 路High power switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A IB Base current 0.2 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MA

4.18. 2sd1415a.pdf Size:83K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415A DESCRIPTION 路With TO-220F package 路High DC current gain 路Low saturation voltage 路DARLINGTON APPLICATIONS 路High power switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector -emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 7 A ICP Collector current peak 10 A IB Base current 0.7 A TC=25? 25 PC Collector power dissipation W Ta=25? 2.0 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415A CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER COND

4.19. 2sd1417.pdf Size:70K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1417 DESCRIPTION 路With TO-220Fa package 路High DC current gain 路Low saturation voltage 路Complement to type 2SB1022 路DARLINGTON APPLICATIONS 路Power amplifier and switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector -emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A IB Base current 0.2 A TC=25? 30 PC Collector power dissipation W Ta=25? 2.0 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1417 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER

4.20. 2sd1412.pdf Size:272K _inchange_semiconductor

2SD1414
2SD1414
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION 路Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A 路Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) 路Complement to Type 2SB1019 APPLICATIONS 路High current switching applications. 路Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IBB Base Current-Continuous 1 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1412 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER

4.21. 2sd1411.pdf Size:171K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1411 DESCRIPTION 袔陇 With TO-220Fa package 袔陇 Low saturation voltage 袔陇 Complementary to 2SB1018 APPLICATIONS 袔陇 Power amplifier applications 袔陇 High current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25袔卸 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER CHA IN Collector current Base current Collector-base voltage Collector -emitter voltage E SEM NG Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 100 80 5 7 1 UNIT V V V A A Emitter-base voltage TC=25袔卸 PC Collector power dissipation Ta=25袔卸 Tj Tstg Junction temperature Storage temperature 30 W 2.0 150 -55~150 袔卸 袔卸

See also transistors datasheet: 2SD1410 , 2SD1411 , 2SD1411-O , 2SD1411-Y , 2SD1412 , 2SD1412-O , 2SD1412-Y , 2SD1413 , BD139 , 2SD1415 , 2SD1416 , 2SD1417 , 2SD1418 , 2SD1419 , 2SD142 , 2SD1420 , 2SD1421 .

Keywords

 2SD1414 Datasheet  2SD1414 Datenblatt  2SD1414 RoHS  2SD1414 Distributor
 2SD1414 Application Notes  2SD1414 Component  2SD1414 Circuit  2SD1414 Schematic
 2SD1414 Equivalent  2SD1414 Cross Reference  2SD1414 Data Sheet  2SD1414 Fiche Technique

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