All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SD1414
  2SD1414
  2SD1414
 
2SD1414
  2SD1414
  2SD1414
 
2SD1414
  2SD1414
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS3060
HEPS3061 .. HSE149
HSE150 .. IR1000
IR1001 .. K2110A
K2110B .. KRA223M
KRA223S .. KRC120M
KRC120S .. KRC881T
KRC882T .. KSB798
KSB810 .. KSC5022-Y
KSC5023 .. KSE171
KSE172 .. KT215D9
KT215E9 .. KT351B
KT352A .. KT657B-2
KT657V-2 .. KT8183B
KT8183B-1 .. KT920B
KT920G .. KTC3194
KTC3195 .. KTX511T
KTX512T .. MD1T3251
MD2001FX .. MJ15018
MJ15019 .. MJE13006
MJE13007 .. MJF6688
MJH10012 .. MMBT200A
MMBT2131 .. MMBTA70L
MMBTA70LT1 .. MP1555A
MP1556 .. MP8133
MP8134 .. MPS3906
MPS3906R .. MQ1613R
MQ1711 .. MT3S19
MT3S19R .. NA22FG
NA22FH .. NB021HZ
NB022E .. NB221EH
NB221EI .. NKT270
NKT271 .. NR431FR
NR431FS .. NTE2554
NTE2555 .. P2N2222A
P2N2369 .. PDTA123EE
PDTA123EM .. PMD19K100
PMD19K200 .. PTB20071
PTB20074 .. RCA9201
RCA9201A .. RN1911FE
RN1911FS .. RN2965FE
RN2965FS .. S790T
S791T .. SF016
SF018 .. SMBT2369
SMBT2369A .. SRC1210EF
SRC1210M .. STL128DN
STL72 .. T1447
T1472 .. TD13005
TD13005-SMD .. TIP34BF
TIP34C .. TIX813
TIX814 .. TN5857
TN5858 .. TRF453A
TRF455 .. UN2117R
UN2117S .. UPT523
UPT524 .. ZTX108L
ZTX108M .. ZTX602
ZTX603 .. ZXTPS720MC
 
2SD1414 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SD1414 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SD1414

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), 掳C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 4000

Noise Figure, dB: -

Package of 2SD1414 transistor: ISO220

2SD1414 Equivalent Transistors - Cross-Reference Search

2SD1414 PDF doc:

1.1. 2sd1414.pdf Size:62K _st

2SD1414
2SD1414
SD1414 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS .836 MHz .12.5 VOLTS .COMMON BASE .P 45 W MIN. WITH 4.7 dB GAIN = OUT .230 6LFL (M142) epoxy sealed ORDER CODE BRANDING SD1414 SD1414 PIN CONNECTION DESCRIPTION The SD1414 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier ap- plications in the 806 - 866 MHz frequency range. Internal input matching and common base con- figuration assure optimum gain and efficiency 1. Collector 3. Base across the entire frequency band. The SD1414 2. Emitter withstands infinite VSWR at rated power output. ABSOLUTE MAXIMUM RATINGS (T = 25癈) case Symbol Parameter Value Unit V Collector-Base Voltage 36 V CBO V Collector-Emitter Voltage 18 V CEO V Collector-Emitter Voltage 36 V CES V Emitter-Base Voltage 4.0 V EBO I Device Current 9.0 A C P Power Dissipation 150 W DISS 癈 TJ Junction Temperature +200 癈 T Storage Temperature - 65 to +150 STG THERMAL DATA R Junction-Case The

1.2. 2sd1414.pdf Size:68K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1414 DESCRIPTION 路With TO-220Fa package 路High DC current gain 路Low saturation voltage 路Complement to type 2SB1024 路DARLINGTON APPLICATIONS 路Power amplifier and switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A IB Base current 0.5 A PC Collector power dissipation TC=25? 20 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1414 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

4.1. 2sd1410a.pdf Size:183K _toshiba

2SD1414
2SD1414

4.2. 2sd1411a.pdf Size:216K _toshiba

2SD1414
2SD1414

4.3. 2sd1417.pdf Size:38K _toshiba

2SD1414
2SD1414

4.4. 2sd1415.pdf Size:183K _toshiba

2SD1414
2SD1414

4.5. 2sd1415a.pdf Size:213K _toshiba

2SD1414
2SD1414

4.6. 2sd1411.pdf Size:184K _toshiba

2SD1414
2SD1414

4.7. 2sd1410.pdf Size:163K _toshiba

2SD1414
2SD1414

4.8. 2sd1412a.pdf Size:216K _toshiba

2SD1414
2SD1414

4.9. 2sd1412.pdf Size:184K _toshiba

2SD1414
2SD1414

4.10. rej03g0787_2sd1418ds-1.pdf Size:112K _renesas

2SD1414
2SD1414
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

4.11. rej03g0788_2sd1419ds-1.pdf Size:112K _renesas

2SD1414
2SD1414
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

4.12. 2sd1419.pdf Size:25K _hitachi

2SD1414
2SD1414
2SD1419 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1026 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1419 Absolute Maximum Ratings (Ta = 25癈) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current iC(peak)*1 2A Collector power dissipation PC*2 1W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW ? 10 ms, Duty cycle ? 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25癈) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 120 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 100 V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 5 V IE = 10 A, IC = 0 voltage Collector cutoff current I

4.13. 2sd1418.pdf Size:31K _hitachi

2SD1414
2SD1414
2SD1418 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1025 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1418 Absolute Maximum Ratings (Ta = 25癈) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current iC(peak)*1 2A Collector power dissipation PC*2 1W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW ? 10 ms, Duty cycle ? 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25癈) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 120 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 80 V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 5 V IE = 10 A, IC = 0 voltage Collector cutoff current ICB

4.14. 2sd1417.pdf Size:70K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1417 DESCRIPTION 路With TO-220Fa package 路High DC current gain 路Low saturation voltage 路Complement to type 2SB1022 路DARLINGTON APPLICATIONS 路Power amplifier and switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector -emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A IB Base current 0.2 A TC=25? 30 PC Collector power dissipation W Ta=25? 2.0 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1417 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER

4.15. 2sd1415.pdf Size:68K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415 DESCRIPTION 路With TO-220Fa package 路High DC current gain 路Low saturation voltage 路Complement to type 2SB1020 路DARLINGTON APPLICATIONS 路High power switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A IB Base current 0.2 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MA

4.16. 2sd1415a.pdf Size:83K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415A DESCRIPTION 路With TO-220F package 路High DC current gain 路Low saturation voltage 路DARLINGTON APPLICATIONS 路High power switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector -emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 7 A ICP Collector current peak 10 A IB Base current 0.7 A TC=25? 25 PC Collector power dissipation W Ta=25? 2.0 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415A CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER COND

4.17. 2sd1411.pdf Size:171K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1411 DESCRIPTION 袔陇 With TO-220Fa package 袔陇 Low saturation voltage 袔陇 Complementary to 2SB1018 APPLICATIONS 袔陇 Power amplifier applications 袔陇 High current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25袔卸 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER CHA IN Collector current Base current Collector-base voltage Collector -emitter voltage E SEM NG Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 100 80 5 7 1 UNIT V V V A A Emitter-base voltage TC=25袔卸 PC Collector power dissipation Ta=25袔卸 Tj Tstg Junction temperature Storage temperature 30 W 2.0 150 -55~150 袔卸 袔卸

4.18. 2sd1410.pdf Size:177K _inchange_semiconductor

2SD1414
2SD1414
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 DESCRIPTION 路Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) 路Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A 路High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS 路Igniter applications 路High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IBB Base Current-Continuous 1 A Collector Power Dissipation 2.0 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 ELECTRICAL CHARACTERISTICS TC=25? unles

4.19. 2sd1416.pdf Size:229K _inchange_semiconductor

2SD1414
2SD1414
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1416 DESCRIPTION 路Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) 路Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A 路High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V 路Complement to Type 2SB1021 APPLICATIONS 路Hammer driver,pulse motor drive applications. 路High power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IBB Base Current-Continuous 0.2 A Collector Power Dissipation PC @ TC=25? 30 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1416 ELECTRICAL CHARACTERISTIC

4.20. 2sd1413.pdf Size:68K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1413 DESCRIPTION 路With TO-220Fa package 路High DC current gain 路Low saturation voltage 路Complement to type 2SB1023 路DARLINGTON APPLICATIONS 路Power amplifier and switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector -emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3 A IB Base current 0.5 A PC Collector power dissipation TC=25? 20 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1413 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

4.21. 2sd1412.pdf Size:272K _inchange_semiconductor

2SD1414
2SD1414
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION 路Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A 路Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) 路Complement to Type 2SB1019 APPLICATIONS 路High current switching applications. 路Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IBB Base Current-Continuous 1 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1412 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER

See also transistors datasheet: 2SD1410 , 2SD1411 , 2SD1411-O , 2SD1411-Y , 2SD1412 , 2SD1412-O , 2SD1412-Y , 2SD1413 , BD139 , 2SD1415 , 2SD1416 , 2SD1417 , 2SD1418 , 2SD1419 , 2SD142 , 2SD1420 , 2SD1421 .

Keywords

 2SD1414 Datasheet  2SD1414 Datenblatt  2SD1414 RoHS  2SD1414 Distributor
 2SD1414 Application Notes  2SD1414 Component  2SD1414 Circuit  2SD1414 Schematic
 2SD1414 Equivalent  2SD1414 Cross Reference  2SD1414 Data Sheet  2SD1414 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com