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2SD1414
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2SD1414
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2SD1414
  2SD1414
 
 
List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
2SD1414 All Transistors Datasheet. BJT, Power MOSFET, IGBT, IC Catalog
 

2SD1414 Transistor (IC) Datasheet. Cross Reference Search. 2SD1414 Equivalent

Type Designator: 2SD1414

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 4

Maksimalna temperatura (Tj), 掳C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 4000

Noise Figure, dB: -

Package of 2SD1414 transistor: ISO220

2SD1414 Equivalent Transistors - Cross-Reference Search

 

2SD1414 PDF doc:

1.1. 2sd1414.pdf Size:62K _st

2SD1414
2SD1414
SD1414 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS .836 MHz .12.5 VOLTS .COMMON BASE .P 45 W MIN. WITH 4.7 dB GAIN = OUT .230 6LFL (M142) epoxy sealed ORDER CODE BRANDING SD1414 SD1414 PIN CONNECTION DESCRIPTION The SD1414 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier ap- plications in the 806 - 866 MHz frequency range. Internal input matching and common base con- figuration assure optimum gain and efficiency 1. Collector 3. Base across the entire frequency band. The SD1414 2. Emitter withstands infinite VSWR at rated power output. ABSOLUTE MAXIMUM RATINGS (T = 25癈) case Symbol Parameter Value Unit V Collector-Base Voltage 36 V CBO V Collector-Emitter Voltage 18 V CEO V Collector-Emitter Voltage 36 V CES V Emitter-Base Voltage 4.0 V EBO I Device Current 9.0 A C P Power Dissipation 150 W DISS 癈 TJ Junction Temperature +200 癈 T Storage Temperature - 65 to +150 STG THERMAL DATA R Junction-Case The

1.2. 2sd1414.pdf Size:68K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1414 DESCRIPTION 路With TO-220Fa package 路High DC current gain 路Low saturation voltage 路Complement to type 2SB1024 路DARLINGTON APPLICATIONS 路Power amplifier and switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A IB Base current 0.5 A PC Collector power dissipation TC=25? 20 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1414 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

4.1. 2sd1410a.pdf Size:183K _toshiba

2SD1414
2SD1414

4.2. 2sd1412a.pdf Size:216K _toshiba

2SD1414
2SD1414

4.3. 2sd1412.pdf Size:184K _toshiba

2SD1414
2SD1414

4.4. 2sd1417.pdf Size:38K _toshiba

2SD1414
2SD1414

4.5. 2sd1411a.pdf Size:216K _toshiba

2SD1414
2SD1414

4.6. 2sd1415a.pdf Size:213K _toshiba

2SD1414
2SD1414

4.7. 2sd1410.pdf Size:163K _toshiba

2SD1414
2SD1414

4.8. 2sd1415.pdf Size:183K _toshiba

2SD1414
2SD1414

4.9. 2sd1411.pdf Size:184K _toshiba

2SD1414
2SD1414

4.10. rej03g0788_2sd1419ds-1.pdf Size:112K _renesas

2SD1414
2SD1414
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

4.11. rej03g0787_2sd1418ds-1.pdf Size:112K _renesas

2SD1414
2SD1414
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

4.12. 2sd1419.pdf Size:25K _hitachi

2SD1414
2SD1414
2SD1419 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1026 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1419 Absolute Maximum Ratings (Ta = 25癈) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current iC(peak)*1 2A Collector power dissipation PC*2 1W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW ? 10 ms, Duty cycle ? 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25癈) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 120 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 100 V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 5 V IE = 10 A, IC = 0 voltage Collector cutoff current I

4.13. 2sd1418.pdf Size:31K _hitachi

2SD1414
2SD1414
2SD1418 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1025 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1418 Absolute Maximum Ratings (Ta = 25癈) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current iC(peak)*1 2A Collector power dissipation PC*2 1W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW ? 10 ms, Duty cycle ? 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25癈) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 120 V IC = 10 A, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 80 V IC = 1 mA, RBE = ? voltage Emitter to base breakdown V(BR)EBO 5 V IE = 10 A, IC = 0 voltage Collector cutoff current ICB

4.14. 2sd1413.pdf Size:68K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1413 DESCRIPTION 路With TO-220Fa package 路High DC current gain 路Low saturation voltage 路Complement to type 2SB1023 路DARLINGTON APPLICATIONS 路Power amplifier and switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector -emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3 A IB Base current 0.5 A PC Collector power dissipation TC=25? 20 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1413 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

4.15. 2sd1416.pdf Size:229K _inchange_semiconductor

2SD1414
2SD1414
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1416 DESCRIPTION 路Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) 路Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A 路High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V 路Complement to Type 2SB1021 APPLICATIONS 路Hammer driver,pulse motor drive applications. 路High power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IBB Base Current-Continuous 0.2 A Collector Power Dissipation PC @ TC=25? 30 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1416 ELECTRICAL CHARACTERISTIC

4.16. 2sd1412.pdf Size:272K _inchange_semiconductor

2SD1414
2SD1414
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION 路Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A 路Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) 路Complement to Type 2SB1019 APPLICATIONS 路High current switching applications. 路Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IBB Base Current-Continuous 1 A Collector Power Dissipation 2 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1412 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER

4.17. 2sd1417.pdf Size:70K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1417 DESCRIPTION 路With TO-220Fa package 路High DC current gain 路Low saturation voltage 路Complement to type 2SB1022 路DARLINGTON APPLICATIONS 路Power amplifier and switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector -emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A IB Base current 0.2 A TC=25? 30 PC Collector power dissipation W Ta=25? 2.0 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1417 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER

4.18. 2sd1415a.pdf Size:83K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415A DESCRIPTION 路With TO-220F package 路High DC current gain 路Low saturation voltage 路DARLINGTON APPLICATIONS 路High power switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector -emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 7 A ICP Collector current peak 10 A IB Base current 0.7 A TC=25? 25 PC Collector power dissipation W Ta=25? 2.0 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415A CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER COND

4.19. 2sd1410.pdf Size:177K _inchange_semiconductor

2SD1414
2SD1414
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 DESCRIPTION 路Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) 路Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A 路High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS 路Igniter applications 路High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IBB Base Current-Continuous 1 A Collector Power Dissipation 2.0 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 ELECTRICAL CHARACTERISTICS TC=25? unles

4.20. 2sd1415.pdf Size:68K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415 DESCRIPTION 路With TO-220Fa package 路High DC current gain 路Low saturation voltage 路Complement to type 2SB1020 路DARLINGTON APPLICATIONS 路High power switching applications 路Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A IB Base current 0.2 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MA

4.21. 2sd1411.pdf Size:171K _inchange_semiconductor

2SD1414
2SD1414
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1411 DESCRIPTION 袔陇 With TO-220Fa package 袔陇 Low saturation voltage 袔陇 Complementary to 2SB1018 APPLICATIONS 袔陇 Power amplifier applications 袔陇 High current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25袔卸 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER CHA IN Collector current Base current Collector-base voltage Collector -emitter voltage E SEM NG Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 100 80 5 7 1 UNIT V V V A A Emitter-base voltage TC=25袔卸 PC Collector power dissipation Ta=25袔卸 Tj Tstg Junction temperature Storage temperature 30 W 2.0 150 -55~150 袔卸 袔卸

See also transistors datasheet: 2SD1410 , 2SD1411 , 2SD1411O , 2SD1411Y , 2SD1412 , 2SD1412O , 2SD1412Y , 2SD1413 , BD139 , 2SD1415 , 2SD1416 , 2SD1417 , 2SD1418 , 2SD1419 , 2SD142 , 2SD1420 , 2SD1421 .

Keywords

 2SD1414 Datasheet  2SD1414 Design 2SD1414 MOSFET 2SD1414 Power
 2SD1414 RoHS Compliant 2SD1414 Service 2SD1414 Triacs 2SD1414 Semiconductor
 2SD1414 Database 2SD1414 Innovation 2SD1414 IC 2SD1414 Electricity

 

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