All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SD180
  2SD180
  2SD180
 
2SD180
  2SD180
  2SD180
 
2SD180
  2SD180
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2SD180 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SD180 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SD180

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 50

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 5

Maksimalna temperatura (Tj), °C: 125

Transition frequency (ft), MHz: 10

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of 2SD180 transistor: TO3

2SD180 Equivalent Transistors - Cross-Reference Search

2SD180 PDF doc:

1.1. 2sd1803.pdf Size:168K _sanyo

2SD180
2SD180
Ordering number:EN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions · Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2045B [2SB1203/2SD1803] Features · Low collector-to-emitter saturation voltage. · High current and high fT. · Excellent linearity of hFE. · Fast switching speed. · Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller. 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SB1203/2SD1803] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to resu

1.2. 2sd1802.pdf Size:150K _sanyo

2SD180
2SD180
Ordering number:EN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applications Package Dimensions · Voltage regulators, relay drivers, lamp drivers, unit:mm electrical equipment. 2045B [2SB1202/2SD1802] Features · Adoption of FBET, MBIT processes. · Large currrent capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1202/2SD1802-used sets smaller. 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SB1202/2SD1802] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious phy

1.3. 2sd1805.pdf Size:162K _sanyo

2SD180
2SD180
Ordering number:EN2115B NPN Epitaxial Planar Silicon Transistor 2SD1805 High-Current Switching Applications Applications Package Dimensions · Strobes, voltage regulators, relay drivers, lamp unit:mm drivers. 2045B [2SD1805] 6.5 Features 2.3 5.0 0.5 4 · Low saturation voltage. · Fast switching time. · Large current capacity. · Small and slim package making it easy to make 2SD1805-applied sets smaller. 0.85 0.7 1.2 1 : Base 0.6 0.5 2 : Collector 3 : Emitter 1 2 3 4 : Collector 2.3 2.3 SANYO : TP unit:mm 2044B [2SD1805] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 1 : Base 0.6 1.2 2 : Collector 0~0.2 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in seri

1.4. 2sd1800.pdf Size:78K _sanyo

2SD180
2SD180
Ordering number:EN2111B NPN Epitaxial Planar Silicon Transistor 2SD1800 Driver Applications Applications Package Dimensions · Relay drivers, hammer drivers, lamp drivers, motor unit:mm drivers. 2045B [2SD1800] 6.5 Features 2.3 5.0 0.5 4 · High DC current gain (hFE? 4000). · Large current capacity. · Small and slim package making it easy to make 2SD1800-applied sets smaller. 0.85 0.7 1.2 1 : Base 0.6 0.5 2 : Collector 3 : Emitter 1 2 3 4 : Collector 2.3 2.3 SANYO : TP unit:mm 2044B [2SD1800] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 1 : Base 0.6 1.2 2 : Collector 0~0.2 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or materia

1.5. 2sb1203_2sd1803.pdf Size:111K _sanyo

2SD180
2SD180
Ordering number:ENN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions · Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2045B [2SB1203/2SD1803] 6.5 Features 2.3 5.0 0.5 4 · Low collector-to-emitter saturation voltage. · High current and high fT. · Excellent linearity of hFE. · Fast switching speed. 0.85 · Small and slim package making it easy to make 0.7 1.2 2SB1203/2SD1803-applied sets smaller. 0.6 0.5 1 : Base 1 2 3 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit:mm 2044B [2SB1203/2SD1803] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 2.3 2.3 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabilit

1.6. 2sd1806.pdf Size:88K _sanyo

2SD180
2SD180
Ordering number:EN2116B NPN Epitaxial Planar Silicon Transistor 2SD1806 High-Current Switching Applications Applications Package Dimensions · Relay control, motor control, switching. unit:mm 2045B Features [2SD1806] 6.5 · Low saturation voltage. 2.3 5.0 0.5 4 · On-chip diode between collector and emitter. · Small and slim package permitting 2SD1806-applied sets to be made more compact. 0.85 0.7 1.2 1 : Base 0.6 0.5 2 : Collector 3 : Emitter 1 2 3 4 : Collector 2.3 2.3 SANYO : TP unit:mm 2044B [2SD1806] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 1 : Base 0.6 1.2 2 : Collector 0~0.2 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or

1.7. 2sb1202_2sd1802.pdf Size:58K _sanyo

2SD180
2SD180
Ordering number:ENN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applications Package Dimensions · Voltage regulators, relay drivers, lamp drivers, unit:mm electrical equipment. 2045B [2SB1202/2SD1802] 6.5 Features 2.3 5.0 0.5 4 · Adoption of FBET, MBIT processes. · Large currrent capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. 0.85 · Small and slim package making it easy to make 0.7 1.2 2SB1202/2SD1802-used sets smaller. 0.6 0.5 1 : Base 1 2 3 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit:mm 2044B [2SB1202/2SD1802] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 2.3 2.3 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-s

1.8. 2sd1804.pdf Size:158K _sanyo

2SD180
2SD180
Ordering number:EN2086B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1204/2SD1804 High-Current Switching Applications Applications Package Dimensions · Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2045B [2SB1204/2SD1804] Features · Low collector-to-emitter saturation voltage. · High current and high fT. · Excellent linearity of hFE. · Fast switching time. · Small and slim package making it easy to make 2SB1204/2SD1804-applied sets smaller. 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SB1204/2SD1804] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to resul

1.9. 2sb1201_2sd1801.pdf Size:111K _sanyo

2SD180
2SD180
Ordering number:ENN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications Package Dimensions · Voltage regulators, relay drivers, lamp drivers, unit:mm electrical equipment. 2045B [2SB1201/2SD1801] Features 6.5 2.3 5.0 · Adoption of FBET, MBIT processes. 0.5 4 · Large current capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 0.85 0.7 2SB1201/2SD1801-used sets smaller. 1.2 0.6 0.5 1 : Base 1 2 3 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit:mm 2044B [2SB1201/2SD1801] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 2.3 2.3 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-suppo

1.10. 2sd1801.pdf Size:143K _sanyo

2SD180
2SD180
Ordering number:EN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications Package Dimensions · Voltage regulators, relay drivers, lamp drivers, unit:mm electrical equipment. 2045B [2SB1201/2SD1801] Features · Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller. 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SB1201/2SD1801] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious phys

1.11. 2sd1803.pdf Size:197K _utc

2SD180
2SD180
UNISONIC TECHNOLOGIES CO., LTD 2SD1803 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. FEATURES *Low Collector-To-Emitter Saturation Voltage. *High Current And High fT. *Excellent Linearity Of hFE. *Fast Switching Time. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 4 5 6 7 8 2SD1803L-x-TM3-T 2SD1803G-x-TM3-T TO-251 B C E - - - - - Tube 2SD1803L-x-TN3-R 2SD1803G-x-TN3-R TO-252 B C E - - - - - Tape Reel 2SD1803L-x-TN3-T 2SD1803G-x-TN3-T TO-252 B C E - - - - - Tube 2SD1803L-x-K08-5060-R 2SD1803G-x-K08-5060-R DFN-8(5?6) E E E B C C C C Tape Reel Note: Pin Assignment: C: Collector B: Base E: Emitter www.unisonic.com.tw 1 of 6 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R209-014,F 2SD1803 NPN SILICON TRANSISTOR PIN CONFIGURATION

1.12. 2sd1802.pdf Size:173K _utc

2SD180
2SD180
UNISONIC TECHNOLOGIES CO., LTD 2SD1802 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD1802L-x-TM3-T 2SD1802G-x-TM3-T TO-251 B C E Tube 2SD1802L-x-TN3-T 2SD1802G-x-TN3-T TO-252 B C E Tube 2SD1802L-x-TN3-R 2SD1802G-x-TN3-R TO-252 B C E Tape Reel Note: Pin Assignment: B: Base C: Collector E: Emitter www.unisonic.com.tw 1 of 3 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R209-001.Ba 2SD1802 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING ( TA= 25?, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Volt

1.13. 2sd1804.pdf Size:211K _utc

2SD180
2SD180
UNISONIC TECHNOLOGIES CO., LTD 2SD1804 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS 1 TO-252 FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. 1 * Fast switching time TO-251 * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller. 1 TO-220 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 2SD1804-x-TA3-T 2SD1804L-x-TA3-T 2SD1804G-x-TA3-T TO-220 B C E Tube 2SD1804-x-TM3-T 2SD1804L-x-TM3-T 2SD1804G-x-TM3-T TO-251 B C E Tube 2SD1804-x-TN3-R 2SD1804L-x-TN3-R 2SD1804G-x-TN3-R TO-252 B C E Tape Reel www.unisonic.com.tw 1 of 5 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R209-006,E 2SD1804 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitte

1.14. 2sd1802.pdf Size:217K _lge

2SD180
2SD180
2SD1802(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Adoption of FBET,MBIT processes Large current capacity and wide ASO Low collector-to-emitter saturation voltage Fast switching speed TO-252-2L MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current –Continuous 3 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ? Dimensions in inches and (millimeters) Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =10ВµA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=10ВµA, IC =0 6 V Collector cut-off current ICBO VCB=40V, IE=0 1 В

1.15. 2sd1802.pdf Size:299K _wietron

2SD180
2SD180
2SD1802 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25?C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 60 VCEO V Collector-Emitter Voltage 50 VEBO V Emitter-Base Voltage 6.0 Collector Current IC A 3.0 Collector Power Dissipation PD 1.0 W Junction Temperature Tj -55 to +150 ?C Tstg -55 to +150 Storage Temperature Range ?C ELECTRICAL CHARACTERISTICS(TA=25?Cunless otherwise noted) Min Typ Parameter Symbol Max Unit Collector-Base Breakdown Voltage BVCBO 60 - - V IC=10µA Collector-Emitter Breakdown Voltage BVCEO 50 - - V IC=1.0mA Emitter-Base Breakdown Voltage BVEBO 6.0 - - V IE=10µA Collector Cutoff Current ICBO - - 1.0 µA VCB=40V Collector Cutoff Current IEBO - - 1.0 µA VEB=4.0V WEITRON 1/4 14-Jul-06 http://www.weitron.com.tw 2SD1802 ON CHARACTERISTICS DC Current Gain hFE(1) 100 - 560 VCE=2V, IC=0.1A - hFE(2) 35 - - VCE=2V, I

See also transistors datasheet: 2SD1794 , 2SD1795 , 2SD1796 , 2SD1797 , 2SD1798 , 2SD1799 , 2SD179A , 2SD18 , 2N5401 , 2SD1800 , 2SD1801 , 2SD1801R , 2SD1801S , 2SD1801T , 2SD1801U , 2SD1802 , 2SD1802R .

Keywords

 2SD180 Datasheet  2SD180 Datenblatt  2SD180 RoHS  2SD180 Distributor
 2SD180 Application Notes  2SD180 Component  2SD180 Circuit  2SD180 Schematic
 2SD180 Equivalent  2SD180 Cross Reference  2SD180 Data Sheet  2SD180 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com