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2SD1915
  2SD1915
  2SD1915
 
2SD1915
  2SD1915
  2SD1915
 
2SD1915
  2SD1915
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SD1915 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SD1915 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SD1915

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.3

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of 2SD1915 transistor: X33

2SD1915 Equivalent Transistors - Cross-Reference Search

2SD1915 PDF doc:

4.1. 2sd1912.pdf Size:701K _sanyo

2SD1915
2SD1915
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.2. 2sd1914.pdf Size:595K _sanyo

2SD1915
2SD1915
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.3. 2sd1913.pdf Size:34K _sanyo

2SD1915
2SD1915
Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications Package Dimensions • General power amplifier. unit : mm 2041A [2SB1274/2SD1913] 4.5 10.0 2.8 Features 3.2 • Wide ASO (Adoption of MBIT process). • Low saturation voltage. • High reliability. • High breakdown voltage. • Micaless package facilitating mounting. 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Base 2.55 2.55 2 : Collector Specifications 3 : Emitter ( ):2SB1274 2.55 2.55 SANYO : TO-220ML Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)60 V Collector-to-Emitter Voltage VCEO (-)60 V Emitter-to-Base Voltage VEBO (-)6 V Collector Current IC (-)3 A Collector Current (Pulse) ICP (-)8 A 2 W Collector Dissipation PC Tc=25°C20 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at

4.4. 2sd2211_2sd1918_2sd1857a.pdf Size:68K _rohm

2SD1915
2SD1915
2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate) (2) Collector(Drain) ROHM : MPT3 (3) Emitter(Source) EIAJ : SC-62 Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage 2SD1918 VCBO 160 V Collector-emitter voltage VCEO 160 V 5.5 1.5 Emitter-base voltage VEBO 5 V 1.5 A(DC) Collector current IC 0.9 3 A(Pulse) ?1 2SD1857A 1 W ?2 C0.5 Collector 2SD2211 2 power PC W ?3 1 0.8Min. dissipation 2SD1918 1.5 10 W(Tc=25°C) 2.5 Junction temperature 150 °C 9.5 Tj Storage temperature Tstg -55 ?+150 °C (1) Base(Gate) ROHM : CPT3 (2) Collector(Drain) ? 1 Single pulse Pw=100ms (3) Emitter(Sou

4.5. 2sb1275_2sb1236a_2sb1569a_2sb1186a_2sd2211_2sd1918_2sd1857a_2sd2400a_2sd1763a.pdf Size:48K _rohm

2SD1915
2SD1915
2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

4.6. 2sd1918.pdf Size:143K _rohm

2SD1915
2SD1915
Power Transistor (160V , 1.5A) 2SD1918 / 2SD1857A ?Features ?Dimensions (Unit : mm) 1) High breakdown voltage.(BVCEO=160V) 2SD1918 2) Low collector output capacitance. 5.5 1.5 (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 0.9 4) Complements the 2SB1275. C0.5 0.8Min. 1.5 ?Absolute maximum ratings (Ta = 25?C) 2.5 9.5 Parameter Symbol Limits Unit (1) Base(Gate) Collector-base voltage VCBO 160 V Collector-emitter voltage ROHM : CPT3 (2) Collector(Drain) VCEO 160 V Emitter-base voltage (3) Emitter(Source) VEBO 5 V EIAJ : SC-63 1.5 A(DC) Collector current IC 3 A(Pulse) ?1 2SD1857A 1 W ?2 Collector power PC 1 W 2SD1918 dissipation 10 W(Tc=25°C) 2SD1857A 6.8 Junction temperature 150 °C Tj 2.5 Storage temperature Tstg -55 ?+150 °C ? 1 Pw=200msec duty=1/2 ? 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. 0.65Max. 0.5 (1) (2) (3) 2.54 2.54 1.05 0.45 Taping specifications ?Packaging specifications and

4.7. 2sd1911.pdf Size:100K _wingshing

2SD1915
2SD1915
Silicon Diffused Power Transistor 2SD1911 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PFM SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Collector-emitter voltage (open base) VCEO - 600 V Collector current (DC) IC - 5 A Collector current peak value ICM - 10 A Total power dissipation Tmb 25 Ptot - 50 W Collector-emitter saturation voltage IC = 4.0A; IB = 0.8A VCEsat - 5 V Collector saturation current f = 16KHz 4.5 - A Icsat Diode forward voltage IF = 4.5A 1.6 2.0 V VF Fall time ICsat = 4.0A; f = 16KHz 1.0 s tf LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V - 1500 V VCESM Collector-emitter voltage (open base) - 600 V VCEO Collector current (DC) - 5 A IC C

4.8. 2sd1910.pdf Size:100K _wingshing

2SD1915
2SD1915
2SD1910 Silicon Diffused Power Transistor GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PFM SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Collector-emitter voltage (open base) VCEO - 600 V Collector current (DC) IC - 3 A Collector current peak value ICM - 6 A Total power dissipation Tmb 25 Ptot - 40 W Collector-emitter saturation voltage IC = 3.0A; IB = 0.8A VCEsat - 5 V Collector saturation current f = 16KHz - A Icsat Diode forward voltage IF = 3.0A 1.6 2.0 V VF Fall time ICsat = 3.0A; f = 16KHz 1.0 s tf LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V - 1500 V VCESM Collector-emitter voltage (open base) - 600 V VCEO Collector current (DC) - 3 A IC Collect

4.9. 2sd1911.pdf Size:96K _inchange_semiconductor

2SD1915
2SD1915
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1911 DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A ICM Collector current-peak 10 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1911 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining v

4.10. 2sd1910.pdf Size:96K _inchange_semiconductor

2SD1915
2SD1915
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1910 DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3 A ICM Collector current-peak 6 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1910 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining vo

4.11. 2sd1912.pdf Size:241K _inchange_semiconductor

2SD1915
2SD1915
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1912 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 8 A Collector Power Dissipation 1.75 @Ta=25? PC W Collector Power Dissipation 30 @TC=25? Junction Temperature 150 ? TJ Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1912 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-E

4.12. 2sd1913.pdf Size:119K _inchange_semiconductor

2SD1915
2SD1915
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1913 DESCRIPTION ·With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3 A ICM Collector current-peak 8 A TC=25? 20 PC Collector dissipation W 2 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1913 CHARACTERISTICS Tj=25? unless otherwise specifie

See also transistors datasheet: 2SD1912Q , 2SD1912R , 2SD1912S , 2SD1913 , 2SD1913Q , 2SD1913R , 2SD1913S , 2SD1914 , 9012 , 2SD1916 , 2SD1917 , 2SD1918 , 2SD1919 , 2SD192 , 2SD1920 , 2SD1921 , 2SD1922 .

Keywords

 2SD1915 Datasheet  2SD1915 Datenblatt  2SD1915 RoHS  2SD1915 Distributor
 2SD1915 Application Notes  2SD1915 Component  2SD1915 Circuit  2SD1915 Schematic
 2SD1915 Equivalent  2SD1915 Cross Reference  2SD1915 Data Sheet  2SD1915 Fiche Technique

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