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2SD1915 Transistor (IC) Datasheet. Cross Reference Search. 2SD1915 Equivalent

Type Designator: 2SD1915

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.3

Maksimalna temperatura (Tj), ¬įC: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of 2SD1915 transistor: X33

2SD1915 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1915 PDF:

4.1. 2sd1914.pdf Size:595K _sanyo

2SD1915
2SD1915

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respec

4.2. 2sd1912.pdf Size:701K _sanyo

2SD1915
2SD1915

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respec

4.3. 2sd1913.pdf Size:34K _sanyo

2SD1915
2SD1915

Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications Package Dimensions ē General power amplifier. unit : mm 2041A [2SB1274/2SD1913] 4.5 10.0 2.8 Features 3.2 ē Wide ASO (Adoption of MBIT process). ē Low saturation voltage. ē High reliability. ē High breakdown volta

4.4. 2sd1918.pdf Size:143K _rohm

2SD1915
2SD1915

Power Transistor (160V , 1.5A) 2SD1918 / 2SD1857A ?Features ?Dimensions (Unit : mm) 1) High breakdown voltage.(BVCEO=160V) 2SD1918 2) Low collector output capacitance. 5.5 1.5 (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 0.9 4) Complements the 2SB1275. C0.5 0.8Min. 1.5 ?Absolute maximum ratings (Ta = 25?C) 2.5 9.5 Parameter Symbol Limits Unit (1) Base(Ga

4.5. 2sd2211_2sd1918_2sd1857a.pdf Size:68K _rohm

2SD1915
2SD1915

2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate) (2)

4.6. 2sb1275_2sb1236a_2sb1569a_2sb1186a_2sd2211_2sd1918_2sd1857a_2sd2400a_2sd1763a.pdf Size:48K _rohm

2SD1915
2SD1915

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

4.7. 2sd1911.pdf Size:100K _wingshing

2SD1915
2SD1915

Silicon Diffused Power Transistor 2SD1911 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PFM SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Coll

4.8. 2sd1910.pdf Size:100K _wingshing

2SD1915
2SD1915

2SD1910 Silicon Diffused Power Transistor GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PFM SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Colle

4.9. 2sd1911.pdf Size:96K _inchange_semiconductor

2SD1915
2SD1915

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1911 DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings

4.10. 2sd1912.pdf Size:241K _inchange_semiconductor

2SD1915
2SD1915

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1912 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Bas

4.11. 2sd1913.pdf Size:119K _inchange_semiconductor

2SD1915
2SD1915

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1913 DESCRIPTION ·With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications PINNING PIN DESCRIPTION 1 Base 2

4.12. 2sd1910.pdf Size:96K _inchange_semiconductor

2SD1915
2SD1915

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1910 DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings

See also transistors datasheet: 2SD1912Q , 2SD1912R , 2SD1912S , 2SD1913 , 2SD1913Q , 2SD1913R , 2SD1913S , 2SD1914 , 9012 , 2SD1916 , 2SD1917 , 2SD1918 , 2SD1919 , 2SD192 , 2SD1920 , 2SD1921 , 2SD1922 .

Search Terms:

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