All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SD1939
  2SD1939
  2SD1939
 
2SD1939
  2SD1939
  2SD1939
 
2SD1939
  2SD1939
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2SD1939 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SD1939 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SD1939

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.75

Maximum collector-base voltage |Ucb|, V: 150

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 6000

Noise Figure, dB: -

Package of 2SD1939 transistor: SOT33

2SD1939 Equivalent Transistors - Cross-Reference Search

2SD1939 PDF doc:

1.1. 2sd1939.pdf Size:124K _nec

2SD1939
2SD1939

4.1. 2sd1935.pdf Size:133K _sanyo

2SD1939
2SD1939
Ordering number:EN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · AF power amplifier, medium-speed switching, small- unit:mm sized motor drivers. 2018A [2SB1295/2SD1935] Features · Large current capacity. · Low collector to emitter saturation voltage. · Very small-sized package permitting sets to be made smaller and slimer. C : Collector B : Base ( ) : 2SB1295 E : Emitter SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)15 V Collector-to-Emitter Voltage VCEO (–)15 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)0.8 A Collector Current (Pulse) ICP (–)3 A Collector Dissipation PC 200 mW ?C Junction Temperature Tj 150 Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min ty

4.2. 2sd1936.pdf Size:190K _sanyo

2SD1939
2SD1939
Ordering number:EN2468 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1296/2SD1936 AF Amplifier Applications Applications Package Dimensions · AF power amplifier, medium-speed switching, small- unit:mm sized motor drivers. 2033 [2SB1296/2SD1936] Features · Large current capacity. · Low collector to emitter saturation voltage. · Wide ASO. B : Base C : Collector ( ) : 2SB1296 E : Emitter SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)15 V Collector-to-Emitter Voltage VCEO (–)15 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)0.8 A Collector Current (Pulse) ICP (–)3 A Collector Dissipation PC 300 mW ?C Junction Temperature Tj 150 Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(–)12V, IE=0 (–)100 nA Emitter Cutoff Current IEBO

4.3. 2sd1934_e.pdf Size:40K _panasonic

2SD1939
2SD1939
Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.7± 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.15 +0.15 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 40 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 7 V 1:Emitter 1 2 3 Peak collector current ICP 8 A 2:Collector 2.54± 0.15 3:Base Collector current IC 5 A TO–92NL Package Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 µ A Emitter cutoff current IEBO VEB = 7V, IC = 0 0.1 µ A

4.4. 2sd1937_e.pdf Size:41K _panasonic

2SD1939
2SD1939
Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SB1297 5.0± 0.2 4.0± 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. Allowing supply with the radial taping. 0.7± 0.1 Absolute Maximum Ratings (Ta=25?C) +0.15 +0.15 0.45 –0.1 0.45 –0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V 1:Emitter Emitter to base voltage VEBO 5 V 1 2 3 2:Collector 2.54± 0.15 3:Base Peak collector current ICP 1 A TO–92NL Package Collector current IC 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = 0.1mA, IB = 0 120 V Emitter to base voltage VEBO IE = 10µ A, IC = 0 5 V hFE1* VCE = 10

4.5. 2sd1934.pdf Size:36K _panasonic

2SD1939
2SD1939
Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.7± 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.15 +0.15 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 40 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 7 V 1:Emitter 1 2 3 Peak collector current ICP 8 A 2:Collector 2.54± 0.15 3:Base Collector current IC 5 A TO–92NL Package Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 µ A Emitter cutoff current IEBO VEB = 7V, IC = 0 0.1 µ A

4.6. 2sd1938.pdf Size:88K _panasonic

2SD1939
2SD1939
Transistors 2SD1938(F) Silicon NPN epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 For muting 0.16+0.10 –0.06 3 For DC-DC converter ¦ Features • Low ON resistance Ron 1 2 • High forward current transfer ratio hFE (0.95) (0.95) • Mini type package, allowing downsizing of the equipment and 1.9±0.1 2.90+0.20 automatic insertion through the tape packing –0.05 10? ¦ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit 1: Base 2: Emitter Collector-base voltage (Emitter open) VCBO 50 V 3: Collector Collector-emitter voltage (Base open) VCEO 20 V EIAJ: SC-59 JEDEC: SOT-346 Emitter-base voltage (Collector open) VEBO 25 V Mini3-G1 Package Collector current IC 300 mA Marking symbol: 3W Peak collector current ICP 500 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C ¦ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Un

4.7. 2sd1933.pdf Size:71K _inchange_semiconductor

2SD1939
2SD1939
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1933 DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1342 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector -emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 4 A ICM Collector current-peak 6 A TC=25? 30 PC Collector power dissipation W Ta=25? 2 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1933 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=50?

4.8. 2sd1932.pdf Size:259K _inchange_semiconductor

2SD1939
2SD1939
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1932 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A Collector Power Dissipation 2 @Ta=25? PC W Collector Power Dissipation 35 @TC=25? Junction Temperature 150 ? TJ Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1932 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Em

See also transistors datasheet: 2SD1935-8 , 2SD1936 , 2SD1936S , 2SD1936T , 2SD1936U , 2SD1936V , 2SD1937 , 2SD1938 , KT829A , 2SD194 , 2SD1940 , 2SD1940D , 2SD1940E , 2SD1940F , 2SD1940G , 2SD1941 , 2SD1942 .

Keywords

 2SD1939 Datasheet  2SD1939 Datenblatt  2SD1939 RoHS  2SD1939 Distributor
 2SD1939 Application Notes  2SD1939 Component  2SD1939 Circuit  2SD1939 Schematic
 2SD1939 Equivalent  2SD1939 Cross Reference  2SD1939 Data Sheet  2SD1939 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com