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2SD1939
  2SD1939
  2SD1939
 
2SD1939
  2SD1939
  2SD1939
 
2SD1939
  2SD1939
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU912
BU920 .. BUP39
BUP40 .. BUV98V
BUW11 .. BUY21A
BUY22 .. CCN83
CCS2001 .. CFD2374Q
CFD2375 .. CK28A
CK398 .. CP404
CP405 .. CSA1267Y
CSA1293 .. CSC1684R
CSC1684S .. CSD669A
CSD669AB .. D24A3900A
D26B1 .. D40E4
D40E5 .. D56W2
D6 .. DPLS350E
DPLS350Y .. DTA143XE
DTA143XEA .. DTD113ES
DTD113Z .. ECG13
ECG130 .. ECG482
ECG483 .. ESM3030DV
ESM3045AV .. FCS9018E
FCS9018F .. FJY3009R
FJY3010R .. FMMT6517
FMMT6520 .. FX2369
FX2369A .. GC522
GC522K .. GES5551
GES5551R .. GS-H9033
GS-H9033D .. GT338B
GT338V .. HDA412
HDA420 .. HS5308
HS5810 .. IDD525
IDD526 .. JE9100C
JE9100D .. KRA102
KRA102M .. KRA763U
KRA764E .. KRC836E
KRC836U .. KSB1098-O
KSB1098-R .. KSC2787-R
KSC2787-Y .. KSD5064
KSD5065 .. KST92
KST93 .. KT3198V
KT321A .. KT6134B
KT6134V .. KT814A9
KT814B .. KT897A
KT897B .. KTB1424
KTB1772 .. KTD3055
KTD525 .. MC142
MC150 .. MJ10042
MJ10044 .. MJD350T4
MJD41C .. MJE5851
MJE5852 .. MM869B
MMBA811C5 .. MMBT589
MMBT589L .. MP110B-B
MP110B-G .. MP504A
MP505 .. MPS2925
MPS2926 .. MPSH02
MPSH04 .. MRF905
MRF912 .. NA11HX
NA11HY .. NB013FU
NB013FV .. NB212FY
NB212H .. NKT124
NKT12429 .. NPS5141
NPS5142 .. NTE172A
NTE176 .. OC815
OC816 .. PBSS5160V
PBSS5220T .. PIMD3
PIMH9 .. PN918
PN918R .. RCA1A05
RCA1A06 .. RN1605
RN1606 .. RN2710
RN2710JE .. S15649
S1619 .. SDT9204
SDT9205 .. SGSIF444
SGSIF445 .. SRA2212EF
SRA2212M .. STC5084
STC5085 .. SZD1060
SZD1181 .. TA2470
TA2492 .. TIP140T
TIP141 .. TIS37
TIS38 .. TN4036
TN4037 .. TP929
TP929A .. UN1066
UN1110Q .. UN9218
UN9219 .. ZT403
ZT403P .. ZTX4402L
ZTX4402M .. ZXTP5401FL
ZXTP5401G .. ZXTPS720MC
 
2SD1939 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SD1939 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SD1939

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.75

Maximum collector-base voltage |Ucb|, V: 150

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 6000

Noise Figure, dB: -

Package of 2SD1939 transistor: SOT33

2SD1939 Equivalent Transistors - Cross-Reference Search

2SD1939 PDF doc:

1.1. 2sd1939.pdf Size:124K _nec

2SD1939
2SD1939

4.1. 2sd1935.pdf Size:133K _sanyo

2SD1939
2SD1939
Ordering number:EN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · AF power amplifier, medium-speed switching, small- unit:mm sized motor drivers. 2018A [2SB1295/2SD1935] Features · Large current capacity. · Low collector to emitter saturation voltage. · Very small-sized package permitting sets to be made smaller and slimer. C : Collector B : Base ( ) : 2SB1295 E : Emitter SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)15 V Collector-to-Emitter Voltage VCEO (–)15 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)0.8 A Collector Current (Pulse) ICP (–)3 A Collector Dissipation PC 200 mW ?C Junction Temperature Tj 150 Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min ty

4.2. 2sd1936.pdf Size:190K _sanyo

2SD1939
2SD1939
Ordering number:EN2468 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1296/2SD1936 AF Amplifier Applications Applications Package Dimensions · AF power amplifier, medium-speed switching, small- unit:mm sized motor drivers. 2033 [2SB1296/2SD1936] Features · Large current capacity. · Low collector to emitter saturation voltage. · Wide ASO. B : Base C : Collector ( ) : 2SB1296 E : Emitter SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)15 V Collector-to-Emitter Voltage VCEO (–)15 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)0.8 A Collector Current (Pulse) ICP (–)3 A Collector Dissipation PC 300 mW ?C Junction Temperature Tj 150 Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(–)12V, IE=0 (–)100 nA Emitter Cutoff Current IEBO

4.3. 2sd1938.pdf Size:88K _panasonic

2SD1939
2SD1939
Transistors 2SD1938(F) Silicon NPN epitaxial planar type For low-voltage output amplification Unit: mm 0.40+0.10 –0.05 For muting 0.16+0.10 –0.06 3 For DC-DC converter ¦ Features • Low ON resistance Ron 1 2 • High forward current transfer ratio hFE (0.95) (0.95) • Mini type package, allowing downsizing of the equipment and 1.9±0.1 2.90+0.20 automatic insertion through the tape packing –0.05 10? ¦ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit 1: Base 2: Emitter Collector-base voltage (Emitter open) VCBO 50 V 3: Collector Collector-emitter voltage (Base open) VCEO 20 V EIAJ: SC-59 JEDEC: SOT-346 Emitter-base voltage (Collector open) VEBO 25 V Mini3-G1 Package Collector current IC 300 mA Marking symbol: 3W Peak collector current ICP 500 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C ¦ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Un

4.4. 2sd1934.pdf Size:36K _panasonic

2SD1939
2SD1939
Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.7± 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.15 +0.15 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 40 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 7 V 1:Emitter 1 2 3 Peak collector current ICP 8 A 2:Collector 2.54± 0.15 3:Base Collector current IC 5 A TO–92NL Package Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 µ A Emitter cutoff current IEBO VEB = 7V, IC = 0 0.1 µ A

4.5. 2sd1937_e.pdf Size:41K _panasonic

2SD1939
2SD1939
Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SB1297 5.0± 0.2 4.0± 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. Allowing supply with the radial taping. 0.7± 0.1 Absolute Maximum Ratings (Ta=25?C) +0.15 +0.15 0.45 –0.1 0.45 –0.1 Parameter Symbol Ratings Unit 1.27 1.27 Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V 1:Emitter Emitter to base voltage VEBO 5 V 1 2 3 2:Collector 2.54± 0.15 3:Base Peak collector current ICP 1 A TO–92NL Package Collector current IC 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = 0.1mA, IB = 0 120 V Emitter to base voltage VEBO IE = 10µ A, IC = 0 5 V hFE1* VCE = 10

4.6. 2sd1934_e.pdf Size:40K _panasonic

2SD1939
2SD1939
Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.7± 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.15 +0.15 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 40 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 7 V 1:Emitter 1 2 3 Peak collector current ICP 8 A 2:Collector 2.54± 0.15 3:Base Collector current IC 5 A TO–92NL Package Collector power dissipation PC 1 W Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 µ A Emitter cutoff current IEBO VEB = 7V, IC = 0 0.1 µ A

4.7. 2sd1933.pdf Size:71K _inchange_semiconductor

2SD1939
2SD1939
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1933 DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1342 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector -emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 4 A ICM Collector current-peak 6 A TC=25? 30 PC Collector power dissipation W Ta=25? 2 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1933 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=50?

4.8. 2sd1932.pdf Size:259K _inchange_semiconductor

2SD1939
2SD1939
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1932 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A Collector Power Dissipation 2 @Ta=25? PC W Collector Power Dissipation 35 @TC=25? Junction Temperature 150 ? TJ Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1932 ELECTRICAL CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Em

See also transistors datasheet: 2SD1935-8 , 2SD1936 , 2SD1936S , 2SD1936T , 2SD1936U , 2SD1936V , 2SD1937 , 2SD1938 , KT829A , 2SD194 , 2SD1940 , 2SD1940D , 2SD1940E , 2SD1940F , 2SD1940G , 2SD1941 , 2SD1942 .

Keywords

 2SD1939 Datasheet  2SD1939 Datenblatt  2SD1939 RoHS  2SD1939 Distributor
 2SD1939 Application Notes  2SD1939 Component  2SD1939 Circuit  2SD1939 Schematic
 2SD1939 Equivalent  2SD1939 Cross Reference  2SD1939 Data Sheet  2SD1939 Fiche Technique

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