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2SD2155 Transistor (IC) Datasheet. Cross Reference Search. 2SD2155 Equivalent

Type Designator: 2SD2155

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 150

Maximum collector-base voltage |Ucb|, V: 180

Maximum collector-emitter voltage |Uce|, V: 180

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 15

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 10

Collector capacitance (Cc), pF: 160

Forward current transfer ratio (hFE), min: 55

Noise Figure, dB: -

Package of 2SD2155 transistor: TO126

2SD2155 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD2155 PDF:

1.1. 2sd2155.pdf Size:177K _toshiba

2SD2155
2SD2155

1.2. 2sd2155.pdf Size:161K _inchange_semiconductor

2SD2155
2SD2155

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2155 DESCRIPTION Ў¤ With TO-3PL package Ў¤ Complement to type 2SB1429 APPLICATIONS Ў¤ Power amplifier applications Ў¤ Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO

4.1. 2sd2150.pdf Size:161K _rohm

2SD2155
2SD2155

Low Frequency Transistor (20V, 3A) 2SD2150 Features Dimensions(Unit : mm) 1) Low VCE(sat). 2SD2150 VCE(sat) = 0.2V(Typ.) 4.5+0.2 -0.1 (IC / IB = 2A / 0.1A) 1.5+0.2 1.60.1 -0.1 2) Excellent current gain characteristics. 3) Complements the 2SB1424. (1) (2) (3) 0.4+0.1 -0.05 0.40.1 0.50.1 Structure 0.40.1 1.50.1 1.50.1 Epitaxial planar type 3.00.2 NPN silicon t

4.2. 2sd2153.pdf Size:158K _rohm

2SD2155
2SD2155

High gain amplifier transistor (25V, 2A) 2SD2153 ?Features ?Dimensions (Unit : mm) 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 4.0 1.0 2.5 0.5 2) Excellent DC current gain characteristics. (1) (2) (3) (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 ?Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit Collector-base vol

4.3. 2sd2151.pdf Size:54K _panasonic

2SD2155
2SD2155

Power Transistors 2SD2151 Silicon NPN epitaxial planar type For power switching Unit: mm Features 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC ? 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratin

4.4. 2sd2156.pdf Size:255K _no

2SD2155
2SD2155

4.5. 2sd2150.pdf Size:307K _secos

2SD2155
2SD2155

2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 Excellent Current-to-Gain Characteristics 1 Low Collector Saturation Voltage, 2 3 A VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A E C Collector B C E 2 B D 1 F G Base H K J L 3 Em

4.6. 2sd2151.pdf Size:124K _inchange_semiconductor

2SD2155
2SD2155

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2151 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Low collector to emitter saturation voltage Ў¤ Large collector current IC APPLICATIONS Ў¤ For power switching applicaitons PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Ў¤ Absolute maximum ratin

4.7. 2sd2150.pdf Size:224K _lge

2SD2155
2SD2155

2SD2150 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR SOT-89 3. EMITTER 4.6 B 4.4 1.6 1.8 Features 1.4 1.4 Excellent current-to-gain characteristics 2.6 4.25 2.4 3.75 Low collector saturation voltage VCE(sat) 0.8 VCE(sat)=0.5V(max) for IC/IB=2A/0.1A MIN 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dime

4.8. 2sd2150.pdf Size:217K _wietron

2SD2155
2SD2155

2SD2150 NPN Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25?C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 40 VCEO V Collector-Emitter Voltage 20 VEBO V Emitter-Base Voltage 6 Collector Current IC 3 A Collector Power Dissipation PD 500 mW Junction Temperature Tj 150 ?C Tstg -55 to +15

4.9. 2sd2159.pdf Size:298K _blue-rocket-elect

2SD2155
2SD2155

2SD2159(BR3DA2159) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92LM 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92LM Plastic Package. 特征 / Features 饱和压降低。 Low saturation voltage. 用途 / Applications 用于中功率放大。 Medium power amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning

4.10. 2sd2150.pdf Size:1104K _blue-rocket-elect

2SD2155
2SD2155

2SD2150(BR3DG2150T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 饱和压降低,典型的电流增益特性,可与 2SB1424(BR3CG1424T)互补。 Low VCE(sat),excellent current gain characteristic, Complementary to 2SB1424(BR3CG1424T). 用途 / Applications 用

4.11. st2sd2150u.pdf Size:637K _semtech

2SD2155
2SD2155

ST 2SD2150U NPN Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 6 V Collector Current - DC IC 3 A Collector Current - Pulse 1) ICP 5 1) 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature

4.12. 2sd2150.pdf Size:1160K _kexin

2SD2155
2SD2155

SMD Type Transistors NPN Transistors 2SD2150 1.70 0.1 ■ Features ● Excellent current-to-gain characteristics ● Low collector saturation voltage VCE(sat) ● Complementary to 2SB1412 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V

4.13. 2sd2153.pdf Size:959K _kexin

2SD2155
2SD2155

SMD Type Transistors NPN Transistors 2SD2153 1.70 0.1 ■ Features ● Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA ● Excellent DC current gain characteristics. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25

See also transistors datasheet: 2SD214 , 2SD2140 , 2SD2141 , 2SD2144 , 2SD2148 , 2SD2149 , 2SD215 , 2SD2151 , MJE13003 , 2SD2156 , 2SD2157 , 2SD2158 , 2SD215F , 2SD216 , 2SD2161 , 2SD2162 , 2SD2163 .

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 2SD2155 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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