2N2369 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N2369

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.36

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 0.2

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 500

Collector capacitance (Cc), pF: 4

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2N2369 transistor: TO18

2N2369 Equivalent Transistors - Cross-Reference Search

2N2369 PDF document for downloads:

1.1. 2n2369.pdf Size:291K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N2369/D Switching Transistors 2N2369 NPN Silicon * 2N2369A COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 3 2 1 MAXIMUM RATINGS Rating Symbol Value Unit CASE 22–03, STYLE 1 Collector–Emitter Voltage VCEO 15 Vdc TO–18 (TO–206AA) Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 4.5 Vdc Collector Current (10 ms pulse) IC(Peak) 500 mA Collector Current — Continuous IC 200 mA Total Device Dissipation @ TA = 25°C PD 0.36 Watt Derate above 25°C 2.06 mW/°C Total Device Dissipation @ TC = 100°C PD 0.68 Watts Derate above 100°C 6.85 mW/°C Operating and Storage Junction TJ, Tstg –65 to +200 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 486 °C/W Thermal Resistance, Junction to Case RqJC 147 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Character

1.2. 2n2369re.pdf Size:291K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N2369/D Switching Transistors 2N2369 NPN Silicon * 2N2369A COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 3 2 1 MAXIMUM RATINGS Rating Symbol Value Unit CASE 22–03, STYLE 1 Collector–Emitter Voltage VCEO 15 Vdc TO–18 (TO–206AA) Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 4.5 Vdc Collector Current (10 ms pulse) IC(Peak) 500 mA Collector Current — Continuous IC 200 mA Total Device Dissipation @ TA = 25°C PD 0.36 Watt Derate above 25°C 2.06 mW/°C Total Device Dissipation @ TC = 100°C PD 0.68 Watts Derate above 100°C 6.85 mW/°C Operating and Storage Junction TJ, Tstg –65 to +200 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 486 °C/W Thermal Resistance, Junction to Case RqJC 147 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Character

1.3. 2n2369.pdf Size:52K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369 NPN switching transistor 1997 Jun 20 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistor 2N2369 FEATURES PINNING • Low current (max. 200 mA) PIN DESCRIPTION • Low voltage (max. 15 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • High-speed switching • VHF amplification. 3 handbook, halfpage 1 2 DESCRIPTION 2 NPN switching transistor in a TO-18 metal package. 3 MAM264 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 40 V VCEO collector-emitter voltage open base - 15 V IC collector current (DC) - 200 mA Ptot total power dissipation Tamb ? 25 °C - 360 mW hFE DC current gain IC = 10 mA; VCE =1V; Tj =25 °C 40 120 fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 M

1.4. 2n2369a.pdf Size:524K _central

2N2369A www.centralsemi.com NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2369A is an epitaxial planar NPN Silicon Transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCES 40 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 4.5 V Continuous Collector Current IC 200 mA Peak Collector Current ICM 500 mA Power Dissipation PD 360 mW Power Dissipation (TC=25°C) PD 1.2 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance ?JA 486 °C/W Thermal Resistance ?JC 146 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=20V 400 nA ICBO VCB=20V, TA=150°C 30 µA BVCBO IC=10µA 40 V BVCES IC=10µA 40 V BVCEO IC=10mA 15 V BVEBO IE=10µA 4.5 V VCE(SAT) IC=10mA, IB=1.0mA 200 mV VCE(SAT) IC=10mA, I

1.5. 2n4449_2n2369a.pdf Size:66K _microsemi

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices Qualified Level 2N2369A 2N4449 JAN 2N2369AU 2N4449U JANTX 2N2369AUA 2N4449UA JANTXV 2N2369AUB 2N4449UB MAXIMUM RATINGS Ratings Symbol All UB All others Unit Collector-Emitter Voltage 20 15 Vdc VCEO Emitter-Base Voltage 6.0 4.5 Vdc VEBO Collector-Base Voltage 40 Vdc VCBO TO-18* (TO-206AA) Collector-Emitter Voltage 40 Vdc VCES 2N2369A @ T = +250C @ T = +250C A C Total Power Dissipation 2N2369A; 2N4449 0.50(1) 1.2(2) W All UA 0.50(5) 1.2(2) W PT All UB 0.40(6) 1.4(7) All U 0.60(3) 1.5(4) 0 TO-46 (TO-206AB) Operating & Storage Junction Temperature Range C Top Tstg -65 to +200 , 2N4449 THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance, Junction-to-Case 2N2369A; 2N4449 146 0 SURFACE MOUNT All UA 125 C/mW R?JC UA* All UB 135 All U 117 Thermal Resistance, Ambient-to-Case 2N2369A; 2N4449 325

See also transistors datasheet: 2N2363 , 2N2364 , 2N2364A , 2N2368 , 2N2368-51 , 2N2368ACSM , 2N2368AQF , 2N2368S , BD135 , 2N2369-46 , 2N2369-51 , 2N2369A , 2N2369ACSM , 2N2369ADCSM , 2N2369AQF , 2N2369AUB , 2N2369CSM .

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