2SD358 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SD358

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 130

Maximum collector-emitter voltage |Uce|, V: 120

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 35

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 55

Noise Figure, dB: -

Package of 2SD358 transistor: TO220

2SD358 Equivalent Transistors - Cross-Reference Search

2SD358 PDF document for downloads:

5.1. 2sd356.pdf Size:43K _no

5.2. 2sd359.pdf Size:37K _no

5.3. 2sd352.pdf Size:42K _no

5.4. 2sd355.pdf Size:30K _no

5.5. 2sd357.pdf Size:266K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD357 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SB527 APPLICATIONS ·Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.8 A Collector Power Dissipation 1 @ Ta=25? PC W Collector Power Dissipation 10 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD357 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ? 100 V

5.6. 2sd350a.pdf Size:147K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD350A DESCRIPTION · ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For color TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A ICM Collector current-peak 7 A PT Total power dissipation TC=90? 22 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ?  Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD350A CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 700 V V(BR)EBO

See also transistors datasheet: 2SD350 , 2SD350A , 2SD351 , 2SD352 , 2SD353 , 2SD355 , 2SD356 , 2SD357 , BC547B , 2SD359 , 2SD36 , 2SD360 , 2SD361 , 2SD362 , 2SD362-N , 2SD362-O , 2SD362-R .

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