2SD600K Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SD600K

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 8

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 130

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of 2SD600K transistor: TO126

2SD600K Equivalent Transistors - Cross-Reference Search

2SD600K PDF document for downloads:

1.1. 2sd600k.pdf Size:115K _sanyo

Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions · High breakdown voltage VCEO 100/120V, High unit:mm current 1A. 2009B · Low saturation voltage, excellent hFE linearity. [2SB631, 631K/2SD600, 600K] 1 : Emitter 2 : Collector 3 : Base ( ) : 2SB631, 631K JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol 2SB631, D600 2SB631K, D600K Unit Conditions Collector-to-Base Voltage VCBO (–)100 (–)120 V Collector-to-Emitter Voltage VCEO (–)100 (–)120 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)1 A Collector Current (Pulse) ICP (–)2 A Collector Dissipation PC 1 W Tc=25?C 8 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector-to-Base Breakdown Voltage V(BR)CBO IC=(–)10µ

1.2. 2sd600_2sd600k.pdf Size:195K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION · ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SD600 100 VCBO Collector-base voltage Open emitter V 2SD600K 120 2SD600 100 VCEO Collector-emitter voltage Open base V 2SD600K 120 VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 1 A ICM Collector current-peak 2 A Ta=25? 1 PD Total power dissipation W TC=25? 8 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K CHARACTERISTICS Tj=25? unless otherw

4.1. 2sd600.pdf Size:126K _sanyo

Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions · High breakdown voltage VCEO 100/120V, High unit:mm current 1A. 2009B · Low saturation voltage, excellent hFE linearity. [2SB631, 631K/2SD600, 600K] 1 : Emitter 2 : Collector 3 : Base ( ) : 2SB631, 631K JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol 2SB631, D600 2SB631K, D600K Unit Conditions Collector-to-Base Voltage VCBO (–)100 (–)120 V Collector-to-Emitter Voltage VCEO (–)100 (–)120 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)1 A Collector Current (Pulse) ICP (–)2 A Collector Dissipation PC 1 W Tc=25?C 8 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector-to-Base Breakdown Voltage V(BR)CBO IC=(–)10µ

4.2. 2sd600.pdf Size:164K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD600 DESCRIPTION ·High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB631 APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICP Collector Current-Pulse 2 A Collector Power Dissipation 8 @ TC=25? PC W Collector Power Dissipation 1 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD600 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. M

See also transistors datasheet: 2SD597 , 2SD598 , 2SD599 , 2SD60 , 2SD600 , 2SD600D , 2SD600E , 2SD600F , TIP142 , 2SD600KD , 2SD600KE , 2SD600KF , 2SD601 , 2SD601A , 2SD602 , 2SD602A , 2SD603 .

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