2SD712 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD712
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 180 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO220
2SD712 Transistor Equivalent Substitute - Cross-Reference Search
2SD712 Datasheet (PDF)
2sd718.pdf
UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage VCBO 120 VCollector-Emitter Voltage VCEO 120 VEmitter-Base Voltage
2sd711.pdf
2SD711 FUJI POWER TRANSISTORTRIPLE DIFFUSED PLANER TYPEHIGH POWER DARLINGTON
2sd716.pdf
2SD716 SILICON EPITAXIAL PLANAR TRANSISTORGENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeTO-3P(I)DQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 100 VCollector-emitter voltage (open base)VCEO - 100 VCollector curre
2sd717.pdf
Silicon Epitaxial Planar Transistor2SD717GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeTO-3P(I)DQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 70 VCBOCollector-emitter voltage (open base)V - 70 VCEOCollector
2sd718 to3p.pdf
SEMICONDUCTOR2SD718TECHNICAL DATANPN EPITAXIAL SILICON TRANSISTORHIGH POWER AMPLIFIER APPLICATIONFEATURES *Recommended for 45~50W Audio Frequency Amplifier Output Stage. *Complementary to 2SB688. 1TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNIT Collector- VCBO 120 V Base Voltage Collector- VCEO 120 V Emitte
2sd718r 2sd718o.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD718DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB688APPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
2sd717o 2sd717y.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD717DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 6.0ACE(sat) CHigh Collector Power Dissipation: P = 80W @T =25C CAPPLICATIONSHigh power switching applicationsDC-DC converter and DC-AC inverter application
2sd711.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD711DESCRIPTIONHigh DC Current GainLow Collector Saturation VoltageExcellent Safe Operating AreaHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlsInverterschoppersSwitching regulatorsG
2sd718.pdf
isc Silicon NPN Power Transistor 2SD718DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB688Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicati
2sd716.pdf
isc Silicon NPN Power Transistor 2SD716DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V (Max)@I = 4ACE(sat) CComplement to Type 2SB686Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for 30~35W high-fid
2sd717.pdf
isc Silicon NPN Power Transistor 2SD717DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 6.0ACE(sat) CHigh Collector Power Dissipation: P = 80W @T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicat
2sd715.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD715DESCRIPTIONHigh DC Current Gain: h = 2000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)High Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power am
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SC1383L | 2SC2655-Y | 2SD1247 | 2SD763 | 3DG2703 | 2SD1045 | 2SD1145
History: 2SC1383L | 2SC2655-Y | 2SD1247 | 2SD763 | 3DG2703 | 2SD1045 | 2SD1145
LIST
Last Update
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D