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2SD830 Transistor (IC) Datasheet. Cross Reference Search. 2SD830 Equivalent

Type Designator: 2SD830

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 30

Maximum collector-base voltage |Ucb|, V: 150

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 10000

Noise Figure, dB: -

Package of 2SD830 transistor: TO220

2SD830 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD830 PDF:

5.1. 2sd834.pdf Size:125K _fuji

2SD830
2SD830

5.2. 2sd835.pdf Size:101K _fuji

2SD830
2SD830

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.3. 2sd833.pdf Size:96K _fuji

2SD830
2SD830

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.4. 2sd838.pdf Size:25K _no

2SD830
2SD830

5.5. 2sd834.pdf Size:117K _inchange_semiconductor

2SD830
2SD830

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON Ў¤ Low collector saturation voltage Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Electronic ignitor Ў¤ Relay and solenoid drivers Ў¤ Switching regulators Ў¤ Motor controls PINNING PIN 1 2 3 Base DESCRIPTION 2SD834 Ab

5.6. 2sd835.pdf Size:313K _inchange_semiconductor

2SD830
2SD830

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD835 DESCRIPTION ·High DC Current Gain- : hFE= 400(Min) @IC= 4A ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @ IC= 4A APPLICATIONS ·Electronic ignitor ·Relay& solenoid drivers ·Motor controls ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARA

5.7. 2sd833.pdf Size:262K _inchange_semiconductor

2SD830
2SD830

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD833 DESCRIPTION ·High DC Current Gain- : hFE= 4000(Min) @IC= 3A ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @ IC= 3A APPLICATIONS ·Audio power amplifiers ·Relay& solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=2

5.8. 2sd837.pdf Size:133K _inchange_semiconductor

2SD830
2SD830

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD837 DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·High Switching Speed APPLICATIONS ·Audio power amplifiers ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Vo

See also transistors datasheet: 2SD826 , 2SD826E , 2SD826F , 2SD826G , 2SD827 , 2SD828 , 2SD829 , 2SD83 , S8550 , 2SD831 , 2SD832 , 2SD833 , 2SD834 , 2SD835 , 2SD836 , 2SD836A , 2SD836B .

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