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410 Transistor (IC) Datasheet. Cross Reference Search. 410 Equivalent

Type Designator: 410

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 125

Maximum collector-base voltage |Ucb|, V: 200

Maximum collector-emitter voltage |Uce|, V: 200

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 7

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of 410 transistor: TO3

410 Transistor Equivalent Substitute - Cross-Reference Search

 

410 PDF:

1.1. 2n410.pdf Size:320K _rca

410
410

1.2. mmjt9410.pdf Size:95K _motorola

410
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Order this document MOTOROLA by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA MMJT9410 Preliminary Data Sheet Motorola Preferred Device Bipolar Power Transistors NPN Silicon Collector Emitter Sustaining Voltage VCEO(sus) POWER BJT = 30 Vdc (Min) @ IC = 10 mAdc IC = 3.0 AMPERES High DC Current Gain hFE BVCEO = 30 VOLTS = 85 (Min) @ IC = 1.0 Adc VCE(sat) = 0.2 VOLTS = 60 (Min) @ I

1.3. vn2410l.rev1.pdf Size:56K _motorola

410
410

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by VN2410L/D TMOS FET Transistor VN2410L 3 DRAIN NChannel Enhancement 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 DrainSource Voltage VDSS 240 Vdc 2 3 DrainGate Voltage VDGR 60 Vdc GateSource Voltage CASE 2904, STYLE 22 Continuous VGS 20 Vdc TO92 (TO226AA) Nonrepetitive (tp ? 50 s) VGSM

1.4. 2n4410re.pdf Size:183K _motorola

410
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4410/D Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 1 Rating Symbol Value Unit TO92 (TO226AA) CollectorEmitter Voltage VCEO 80 Vdc CollectorBase Voltage VCBO 120 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 250 mAdc To

1.5. mj410rev.pdf Size:139K _motorola

410
410

Order this document MOTOROLA by MJ410/D SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon 5 AMPERE Transistors POWER TRANSISTOR NPN SILICON . . . designed for medium to high voltage inverters, converters, regulators and 200 VOLTS switching circuits. 100 WATTS High CollectorEmitter Voltage VCEO = 200 Volts DC Current Gain Specified @ 1.0 and 2.5 Adc IIIIIIIIIIIIIII

1.6. bfg410w_4.pdf Size:85K _philips

410
410

DISCRETE SEMICONDUCTORS BFG410W NPN 22 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1 emitter High transition frequency 2 base Emitter i

1.7. bfg410w.pdf Size:371K _philips

410
410

DISCRETE SEMICONDUCTORS DATA SHEET BFG410W NPN 22 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29 NXP Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING ? Very high power gain PIN DESCRIPTION ? Low noise figure 1emitter ? High transition frequency 2 base ? Emitter is thermal lead 3emitter ? Low f

1.8. pbss9410pa.pdf Size:167K _philips

410
410

PBSS9410PA 100 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 01 11 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS8510PA. 1.2 Features and benefits L

1.9. bf410a_410b_410c_410d.pdf Size:32K _philips

410
410

DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors December 1990 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D DESCRIPTION PINNING - TO-92 VARIANT Asymmetrical N-channel planar 1 = drain epitaxial junction field-effect 2 = source

1.10. buf410.pdf Size:69K _st

410
410

BUF410 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: 3 SWITCH MODE POWER SUPPLIES 2 MOTOR CONTROL 1 DESCRIPTION TO-218 The BUF410 is manufactured using High Voltage Multi Epitaxial Planar technology

1.11. sd4100.pdf Size:58K _st

410
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SD4100 PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to introduction and SGS-THOMSON assumes no liability for use of information contained herein. RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS .4

1.12. buf410a.pdf Size:146K _st

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BUF410A High voltage fast-switching NPN power transistor Features High voltage capability Very high switching speed Minimum lot-to-lot spread for reliable operation Low base-drive requirements Applications 3 2 1 Switch mode power supplies TO-247 Motor control Description The BUF410A is manufactured using high voltage Figure 1. Internal schematic diagram multi epitaxia

1.13. 2sd1410a.pdf Size:183K _toshiba

410
410

1.14. mp4410_en_wm_20061027.pdf Size:152K _toshiba

410
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MP4410 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-?-MOSV in One) MP4410 Industrial Applications High Power, High Speed Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching 4-V gate drivability Small package by full molding (SIP 12 pin) High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25C)

1.15. 2sk4106.pdf Size:175K _toshiba

410
410

2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4106 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol

1.16. 2sk4105.pdf Size:199K _toshiba

410
410

2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4105 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso

1.17. ssm6j410tu_100119.pdf Size:217K _toshiba

410
410

SSM6J410TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?) SSM6J410TU 0 Power Management Switch Applications Unit: mm 0 High-Speed Switching Applications 4-V drive Low ON-resistance RDS(ON) = 393m? (max) (@VGS = 4 V) RDS(ON) = 216m? (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30

1.18. 2sk4107.pdf Size:239K _toshiba

410
410

 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4107 ○ Switching Regulator Applications Unit: mm • Low drain-source ON resistance : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.) • Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

1.19. rn2410-rn2411.pdf Size:108K _toshiba

410
410

RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2410,RN2411 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1410, RN1411 Equivalent Circuit Maximum Ratings (Ta = 25 C)

1.20. 2sk4104.pdf Size:206K _toshiba

410
410

2SK4104 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4104 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

1.21. 2sk4108.pdf Size:281K _toshiba

410
410

2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4108 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0. 21Ω (typ.) High forward transfer admittance : |Yfs| = 14 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Max

1.22. rn1410_rn1411.pdf Size:103K _toshiba

410
410

RN1410,RN1411 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1410,RN1411 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2410, RN2411 Equivalent Circuit Maximum Ratings (Ta = 25C) JEDEC T

1.23. mp4101_en_wm_20061027.pdf Size:167K _toshiba

410
410

MP4101 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4101 Industrial Applications High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C) High colle

1.24. mp4104_en_wm_20061027.pdf Size:165K _toshiba

410
410

MP4104 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4104 Industrial Applications High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C) High c

1.25. 2sd1410.pdf Size:163K _toshiba

410
410

1.26. 2sk4103.pdf Size:296K _toshiba

410
410

2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK4103 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 2.8S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximu

1.27. 2sc4107.pdf Size:93K _sanyo

410
410

Ordering number:EN2472A NPN Triple Diffused Planar Silicon Transistor 2SC4107 400V/10A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2010C Wide ASO. [2SC4107] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220A

1.28. mch3410.pdf Size:27K _sanyo

410
410

Ordering number : ENN6864 MCH3410 N-Channel Silicon MOSFET MCH3410 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 4V drive. [MCH3410] 0.3 0.15 3 1 2 0.65 2.0 1 : Gate 2 : Source 3 : Drain Specifications SANYO : MCPH3 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Uni

1.29. 2sk4100ls.pdf Size:97K _sanyo

410
410

www.DataSheet4U.com Ordering number : ENA0778 2SK4100LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4100LS Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guaran

1.30. 2sc4104.pdf Size:19K _sanyo

410
410

Ordering number:EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applications Features Package Dimensions High fT. unit:mm Small reverse transfer capacitance. 2018A Adoption of FBET process. [2SA1580/2SC4104] C : Collector B : Base E : Emitter ( ) : 2SA1580 SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Para

1.31. 2sc4105.pdf Size:92K _sanyo

410
410

Ordering number:EN2470A NPN Triple Diffused Planar Silicon Transistor 2SC4105 400V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2010C Wide ASO. [2SC4105] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 0.8 1 : Base 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB

1.32. 2sc4106.pdf Size:92K _sanyo

410
410

Ordering number:EN2471A NPN Triple Diffused Planar Silicon Transistor 2SC4106 400V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2010C Wide ASO. [2SC4106] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB

1.33. cph3410.pdf Size:28K _sanyo

410
410

Ordering number : ENN6777 CPH3410 N-Channel Silicon MOSFET CPH3410 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3410] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 : Gate 2 : Source 3 : Drain Specifications SANYO : CPH3 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Rat

1.34. 2sc4108.pdf Size:93K _sanyo

410
410

Ordering number:EN2473A NPN Triple Diffused Planar Silicon Transistor 2SC4108 400V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2022A Wide ASO. [2SC4108] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0 1.6 1.4 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter

1.35. ech8410.pdf Size:286K _sanyo

410
410

ECH8410 Ordering number : ENA1331 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8410 Applications Features Low ON-resistance. 4V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V Drain C

1.36. 2sc4109.pdf Size:95K _sanyo

410
410

Ordering number:EN2474A NPN Triple Diffused Planar Silicon Transistor 2SC4109 400V/16A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2022A Wide ASO. [2SC4109] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0 1.6 1.4 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter

1.37. tf410.pdf Size:313K _sanyo

410
410

TF410 Ordering number : ENA2007 SANYO Semiconductors DATA SHEET N-Channel Silicon Junction FET Impedance Converter, TF410 Infrared Sensor Applications Applications Impedance conversion, infrared sensor applications Features Ultrasmall package facilities miniaturization in end products : 1.0mm?0.6mm?0.27mm (max 0.3mm) Small IGSS : max --500pA (VGSS= --20V, VDS=0V) Small Ciss :

1.38. 2sk4101ls.pdf Size:45K _sanyo

410
410

Ordering number : ENA0745 2SK4101LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4101LS Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee. Spec

1.39. fnb41060.pdf Size:905K _fairchild_semi

410
410

January 2010 TM Motion-SPM FNB41060 Smart Power Module Features General Description It is an advanced motion-smart power module (Motion-SPMTM) 600V-10A 3-phase IGBT inverter bridge including control ICs that Fairchild has newly developed and designed to provide for gate driving and protection very compact and high performance ac motor drives mainly tar- Easy PCB layout due to built

1.40. fdmd84100.pdf Size:234K _fairchild_semi

410
410

January 2014 FDMD84100 Dual N-Channel PowerTrench® MOSFET 100 V, 21 A, 20 mΩ Features General Description Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A This package integrates two N-Channel devices connected internally in common-source configuration. This enables very Max rDS(on) = 32 mΩ at VGS = 6 V, ID = 5.5 A low package parasitics and optimized thermal path to the Ideal fo

1.41. fjv4103r.pdf Size:56K _fairchild_semi

410
410

FJV4103R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=22K?, R2=22K?) Complement to FJV3103R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R73 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Para

1.42. fjv4108r.pdf Size:55K _fairchild_semi

410
410

FJV4108R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=47K?, R2=22K?) Complement to FJV3108R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R78 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Par

1.43. 2n4410.pdf Size:294K _fairchild_semi

410
410

Discrete POWER & Signal Technologies 2N4410 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V V Coll

1.44. fjv4104r.pdf Size:89K _fairchild_semi

410
410

FJV4104R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=47K?, R2=47K?) Complement to FJV3104R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R74 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Par

1.45. fdd9410_f085.pdf Size:573K _fairchild_semi

410
410

October 2014 FDD9410_F085 N-Channel Power Trench® MOSFET 40 V, 50 A, 4.1 mΩ D Features Typ rDS(on) = 3.5 mΩ at VGS = 10V, ID = 50 A D Typ Qg(tot) = 23.5 nC at VGS = 10V, ID = 50 A G G UIS Capability S RoHS Compliant D-PAK TO-252 Qualified to AEC Q101 S (TO-252) Applications Automotive Engine Control Powertrain Management For current package drawing, plea

1.46. fjv4105r.pdf Size:88K _fairchild_semi

410
410

FJV4105R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=4.7K?, R2=10K?) Complement to FJV3105R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R75 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Pa

1.47. nds8410a.pdf Size:186K _fairchild_semi

410
410

1.48. fjv4107r.pdf Size:56K _fairchild_semi

410
410

FJV4107R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=22K?, R2=47K?) Complement to FJV3107R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R77 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Par

1.49. fdg410nz.pdf Size:283K _fairchild_semi

410
410

March 2009 FDG410NZ Single N-Channel PowerTrench MOSFET 20 V, 2.2 A, 70 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 70 m? at VGS = 4.5 V, ID = 2.2 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 77 m? at VGS = 2.5 V, ID = 2.0 A synchronous or conventional switching PWM controllers. It has bee

1.50. fjv4101r.pdf Size:55K _fairchild_semi

410
410

FJV4101R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=4.7K?, R2=4.7K?) Complement to FJV3101R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R71 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol P

1.51. fdma410nz.pdf Size:222K _fairchild_semi

410
410

April 2009 FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.5 A, 23 m? Features General Description Max rDS(on) = 23 m? at VGS = 4.5 V, ID = 9.5 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 29 m? at VGS = 2.5 V, ID = 8.0 A optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET M

1.52. fna41060.pdf Size:924K _fairchild_semi

410
410

January 2010 TM Motion-SPM FNA41060 Smart Power Module Features General Description It is an advanced motion-smart power module (Motion-SPMTM) 600V-10A 3-phase IGBT inverter bridge including control ICs that Fairchild has newly developed and designed to provide for gate driving and protection very compact and high performance ac motor drives mainly tar- Easy PCB layout due to built

1.53. hp4410dy.pdf Size:148K _fairchild_semi

410
410

HP4410DY Data Sheet December 2001 10A, 30V, 0.0135 Ohm, Single N-Channel, Features Logic Level Power MOSFET • Logic Level Gate Drive This power MOSFET is manufactured using an innovative • 10A, 30V process. This advanced process technology achieves the • rDS(ON) = 0.0135Ω at ID = 10A, VGS = 10V lowest possible on-resistance per silicon area, resulting in outstanding perform

1.54. fdme410nzt.pdf Size:299K _fairchild_semi

410
410

February 2010 FDME410NZT N-Channel PowerTrench MOSFET 20 V, 7 A, 26 m? Features General Description This Single N-Channel MOSFET has been designed using Max rDS(on) = 26 m? at VGS = 4.5 V, ID = 7 A Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 31 m? at VGS = 2.5 V, ID = 6 A optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET Max rDS(on) = 39 m? at VGS =

1.55. fjv4102r.pdf Size:55K _fairchild_semi

410
410

FJV4102R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=10K?, R2=10K?) Complement to FJV3102R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R72 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Para

1.56. fjv4109r.pdf Size:52K _fairchild_semi

410
410

FJV4109R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=4.7K?) Complement to FJV3109R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R79 R B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Un

1.57. fjv4106r.pdf Size:89K _fairchild_semi

410
410

FJV4106R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=10K?, R2=47K?) Complement to FJV3106R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R76 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Par

1.58. fdr4410.pdf Size:220K _fairchild_semi

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April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost 9.3 A, 30 V. RDS(ON) = 0.013 ? @ VGS = 10 V alternative to the popular Si4410DY. RDS(ON) = 0.020 ? @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). The SuperSOTTM-8 package is 40% smaller than the SO-8 package. Pro

1.59. nds9410a.pdf Size:77K _fairchild_semi

410
410

1.60. fds4410a.pdf Size:112K _fairchild_semi

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May 2005 FDS4410A Single N-Channel, Logic-Level, PowerTrench MOSFET Features General Description 10 A, 30 V. RDS(ON) = 13.5 m? @ VGS = 10 V This N-Channel Logic Level MOSFET is produced using Fair- RDS(ON) = 20 m? @ VGS = 4.5 V child Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and Fast switching speed yet maintain

1.61. irfr3410.pdf Size:140K _international_rectifier

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PD - 94505 IRFR3410 IRFU3410 HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 39m? 31A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3410 IRFU3410 Ab

1.62. irf7410.pdf Size:102K _international_rectifier

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PD - 94025 IRF7410 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 7m?@VGS = -4.5V -16A Surface Mount 9m?@VGS = -2.5V -13.6A Available in Tape & Reel 13m?@VGS = -1.8V -11.5A Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques to achieve the extremely low on-

1.63. irfp2410.pdf Size:147K _international_rectifier

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Preliminary Data Sheet PD - 9.1251 IRFP2410 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating VDSS = 100V Repetitive Avalanche Rated 175C Operating Temperature RDS(on) = 0.025? Fast Switching Ease of Paralleling ID = 61A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the

1.64. irfl4105.pdf Size:168K _international_rectifier

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PD- 91381A IRFL4105 HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.045? Fast Switching G Fully Avalanche Rated ID = 3.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

1.65. irfr4105.pdf Size:144K _international_rectifier

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PD - 91302C IRFR/U4105 HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR4105) VDSS = 55V Straight Lead (IRFU4105) Fast Switching RDS(on) = 0.045? Fully Avalanche Rated G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benef

1.66. irf9410.pdf Size:114K _international_rectifier

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PD - 9.1562A IRF9410 PRELIMINARY HEXFET Power MOSFET Generation V Technology A A 1 8 S D Ultra Low On-Resistance VDSS = 30V 2 7 N-Channel MOSFET S D Surface Mount 3 6 S D Very Low Gate Charge and 4 5 G D Switching Losses RDS(on) = 0.030? Fully Avalanche Rated Top View Description Recommended upgrade: IRF7403 or IRF7413 Fifth Generation HEXFETs from International Rect

1.67. irlr3410.pdf Size:158K _international_rectifier

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PD - 91607B IRLR/U3410 HEXFET Power MOSFET Logic Level Gate Drive D Ultra Low On-Resistance VDSS = 100V Surface Mount (IRLR3410) Straight Lead (IRLU3410) RDS(on) = 0.105? Advanced Process Technology G Fast Switching ID = 17A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowe

1.68. si4410dy.pdf Size:93K _international_rectifier

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PD - 91853C Si4410DY HEXFET Power MOSFET N-Channel MOSFET A A Low On-Resistance 1 8 S D VDSS = 30V Low Gate Charge 2 7 S D Surface Mount 3 6 S D Logic Level Drive 4 5 G D RDS(on) = 0.0135? Top View Description This N-channel HEXFET Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate char

1.69. irfr5410.pdf Size:215K _international_rectifier

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PD - 9.1533A IRFR/U5410 HEXFET Power MOSFET l Ultra Low On-Resistance D l P-Channel VDSS = -100V l Surface Mount (IRFR5410) l Straight Lead (IRFU5410) RDS(on) = 0.205W l Advanced Process Technology G l Fast Switching ID = -13A l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

1.70. ne55410gr.pdf Size:647K _nec

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DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PAs. This product has two different FET's on one die m

1.71. irfu410a.pdf Size:743K _samsung

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Advanced Power MOSFET IRFU410A BVDSS = 520 V Improved Inductive Ruggedness RDS(on) = 10.0? Rugged Polysilicon Gate Cell Structure Fast Switching Times ID = 1.2 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Improved High Temperature Reliability 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Sourc

1.72. bts410h2.pdf Size:167K _siemens

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PROFET BTS 410 H2 Smart Highside Power Switch Features Product Summary Overload protection Overvoltage protection Vbb(AZ) 65 V Current limitation V 4.7 ... 42 V Operating voltage bb(on) Short circuit protection On-state resistance R 220 Thermal shutdown ON m? Overvoltage protection (including load dump) Load current (ISO) I 1.8 A L(ISO) Fast demagnetization of inductive

1.73. bts410g2.pdf Size:161K _siemens

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PROFET BTS 410 G2 Smart Highside Power Switch Features Product Summary Overload protection Overvoltage protection Vbb(AZ) 65 V Current limitation V 4.7 ... 42 V Operating voltage bb(on) Short circuit protection On-state resistance R 220 Thermal shutdown ON m? Overvoltage protection (including load dump) Load current (ISO) I 1.8 A L(ISO) Fast demagnetization of inductive

1.74. bup410d.pdf Size:81K _siemens

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BUP 410D IGBT With Antiparallel Diode Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 410D 600V 13A TO-220 AB Q67040-A4425-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 600 V Collector-gate voltage VCGR

1.75. bts410e2.pdf Size:168K _siemens

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PROFET BTS 410 E2 Smart Highside Power Switch Features Product Summary Overload protection Overvoltage protection Vbb(AZ) 65 V Current limitation V 4.7 ... 42 V Operating voltage bb(on) Short circuit protection On-state resistance R 220 Thermal shutdown ON m? Overvoltage protection (including load dump) Load current (ISO) I 1.8 A L(ISO) Fast demagnetization of inductive

1.76. bts410f2.pdf Size:167K _siemens

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PROFET BTS 410 F2 Smart Highside Power Switch Features Product Summary Overload protection Overvoltage protection Vbb(AZ) 65 V Current limitation V 4.7 ... 42 V Operating voltage bb(on) Short circuit protection On-state resistance R 220 Thermal shutdown ON m? Overvoltage protection (including load dump) Load current (ISO) I 1.8 A L(ISO) Fast demagnetization of inductive

1.77. bts410d2.pdf Size:170K _siemens

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PROFET BTS 410 D2 Smart Highside Power Switch Features Product Summary Overload protection Overvoltage protection Vbb(AZ) 65 V Current limitation V 4.7 ... 42 V Operating voltage bb(on) Short circuit protection On-state resistance R 220 Thermal shutdown ON m? Overvoltage protection (including load dump) Load current (ISO) I 1.8 A L(ISO) Fast demagnetization of inductive

1.78. 2sc4102_2sc3906k_2sc2389s.pdf Size:67K _rohm

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2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Colle

1.79. 2sc4102.pdf Size:126K _rohm

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High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K ?Features ?Dimensions (Unit : mm) 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K 1.25 ?Absolute maximum ratings (Ta=25?C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V 0.1Min. Emitter-base voltage VEBO 5 V Each lead

1.80. sib410dk.pdf Size:187K _vishay

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1.81. si4102dy.pdf Size:239K _vishay

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Si4102DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)d Qg (Typ.) Available 0.158 at VGS = 10 V 3.8 TrenchFET Power MOSFET 100 4.6 nC 100 % UIS Tested 0.175 at VGS = 6 V 3.6 APPLICATIONS High Frequency Boost Converter LED Backlight for LCD TV SO-8 S D 1 8 D S D 2

1.82. si4100dy.pdf Size:238K _vishay

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Si4100DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)d Qg (Typ.) Available 0.063 at VGS = 10 V 6.8 TrenchFET Power MOSFET 100 9 nC 100 % UIS Tested 0.084 at VGS = 6 V 5.8 APPLICATIONS High Frequency Boost Converter LED Backlight for LCD TV SO-8 S D 1 8 D S D 2

1.83. si6410dq.pdf Size:189K _vishay

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Si6410DQ Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) (?)ID (A) TrenchFET Power MOSFETs 0.014 at VGS = 10 V 7.8 30 RoHS 0.021 at VGS = 4.5 V 6.3 COMPLIANT D TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. G D D 1 8 S S 2 7 Si6410DQ S S 3 6 G D 4 5 Top View S* Ordering Information: Si6410DQ-T

1.84. si4410bdy.pdf Size:227K _vishay

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Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Definition 0.0135 at VGS = 10 V 10 TrenchFET Power MOSFET 30 0.020 at VGS = 4.5 V 8 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Battery Switch Load Switch SO-8 D S D 1 8 S D 2 7 S D

1.85. si4104dy.pdf Size:252K _vishay

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New Product Si4104DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) Definition 0.105 at VGS = 10 V TrenchET Power MOSFET 100 4.6 8.5 nC 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 High Frequency DC/DC Convert

1.86. tn2410l_vn2406d-l_vn2410l-ls.pdf Size:64K _vishay

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1.87. si4108dy.pdf Size:267K _vishay

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New Product Si4108DY Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0098 at VGS = 10 V 75 36 nC 20.5 100 % Rg Tested COMPLIANT 100 % UIS Tested APPLICATIONS Primary Side Switch Half Bridge SO-8 Intermediate Bus Converter D S 1 8 D S D 2 7 S 3

1.88. sis410n.pdf Size:537K _vishay

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1.89. vp2410l.pdf Size:48K _vishay

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1.90. si9410dy.pdf Size:42K _vishay

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1.91. si3410dv.pdf Size:189K _vishay

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Si3410DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) Definition 0.0195 at VGS = 10 V 8 TrenchFET Power MOSFET 30 9.2 nC Compliant to RoHS Directive 2002/95/EC 0.023 at VGS = 4.5 V 8 APPLICATIONS Notebook Load Switch Low Current dc-to-dc TSOP-6 Top View D D

1.92. si9410bdy.pdf Size:242K _vishay

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1.93. si4410dy.pdf Size:353K _vishay

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SI4410DY N-channel TrenchMOS logic level FET Rev. 03 4 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and be

1.94. si5410du.pdf Size:148K _vishay

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New Product Si5410DU Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 12 New Thermally Enhanced PowerPAK RoHS 40 10 nC 0.021 at VGS = 4.5 V 12 COMPLIANT ChipFET Package - Small Footprint Area PowerPAK ChipFET Single - Low On-Resistance - Thin 0.8 mm

1.95. sir410d.pdf Size:471K _vishay

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1.96. ctlm3410_ctlm7410_ctlm3474-m832d.pdf Size:403K _central

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CTLM3410-M832D CTLM7410-M832D CTLM3474-M832D www.centralsemi.com SURFACE MOUNT DESCRIPTION: DUAL, LOW VCE (SAT) The CENTRAL SEMICONDUCTOR CTLM3410- SILICON TRANSISTORS M832D (Dual NPN), CTLM7410-M832D (Dual PNP), and CTLM3474-M832D (Complementary NPN & PNP) are Low VCE(SAT) Transistors packaged in the small, thermally efficient, 3x2mm Tiny Leadless Module (TLM) surface mount case

1.97. zvp4105a.pdf Size:55K _diodes

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P-CHANNEL ENHANCEMENT ZVP4105A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 T V I VD ? D I D E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT D i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V V V I T I V 8 V ID VD V V I I V V VD V

1.98. zvn4106f.pdf Size:46K _diodes

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SOT23 N-CHANNEL ENHANCEMENT ZVN4106F MODE VERTICAL DMOS FET ISSUE 2 DECEMBER 1995 PARMARKING DETAIL - MZ S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25C ID 0.2 A 10 Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20 V Max Power Dissipation at Tamb=25C Ptot 330 mW ent Operating and Storage Te

1.99. oms410.pdf Size:38K _omnirel

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OMS410 OMS410A OMS510 3 PHASE, LOW VOLTAGE, LOW RDS(on), MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE Three Phase, 100 Volt, 15 To 45 Amp Bridge With Current And Temperature Sensing In A Low Profile Package FEATURES Three Phase Power Switch Configuration Zener Gate Protection 10 Miliohm Shunt Resistor Linear Thermal Sensor Isolated Low Profile Package Output Currents Up To 4

1.100. ntjd4105c.pdf Size:149K _onsemi

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NTJD4105C Small Signal MOSFET 20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88 Features Complementary N and P Channel Device Leading -8.0 V Trench for Low RDS(on) Performance http://onsemi.com ESD Protected Gate - ESD Rating: Class 1 SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) TYP ID Max Pb-Free Packages are Available 0.29 W @ 4.5 V N-Ch 20 V 0.63 A

1.101. ntb6410an_ntp6410an.pdf Size:144K _onsemi

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NTB6410AN, NTP6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features Low RDS(on) High Current Capability http://onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25C Unless otherwise specified) 100 V 13 mW @ 10 V 76 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel Gate-to-Sourc

1.102. vn2410l.pdf Size:106K _onsemi

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VN2410L Small Signal MOSFET 240 V, 200 mA, N-Channel TO-92 Features Pb-Free Packages are Available* http://onsemi.com MAXIMUM RATINGS 200 mA, 240 V Rating Symbol Value Unit RDS(on) = 10 ? Drain -Source Voltage VDSS 240 Vdc N-Channel Drain -Gate Voltage VDGR 240 Vdc D Gate-Source Voltage - Continuous VGS 20 Vdc - Non-repetitive (tp ? 50 s) VGSM 40 Vpk Continuous Drain Curren

1.103. ntmfs4108n.pdf Size:90K _onsemi

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NTMFS4108N Power MOSFET 30 V, 35 A, Single N-Channel, SO-8 Flat Lead Package http://onsemi.com Features Thermally and Electrically Enhanced Packaging Compatible with http://onsemi.com Standard SO-8 Package Footprint New Package Provides Capability of Inspection and Probe After V(BR)DSS RDS(on) TYP ID MAX Board Mounting 1.8 mW @ 10 V Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resis

1.104. ntms4107n-d.pdf Size:72K _onsemi

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NTMS4107N Power MOSFET 30 V, 18 A, Single N-Channel, SO-8 Features Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG Optimized for Low Side Synchronous Applications http://onsemi.com High Speed Switching Capability Pb-Free Package is Available V(BR)DSS RDS(on) TYP ID MAX 3.4 mW @ 10 V Applications 30 V 18 A Notebook Computer Vcore Applications 4.7 mW @ 4.5 V

1.105. ntr4101p.pdf Size:108K _onsemi

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NTR4101P Trench Power MOSFET -20 V, Single P-Channel, SOT-23 Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drive http://onsemi.com http://onsemi.com SOT-23 Surface Mount for Small Footprint Pb-Free Package is Available V(BR)DSS RDS(ON) TYP ID MAX Applications 70 mW @ -4.5 V -20 V Load/Power Management for Portables 90 mW @ -2.5 V -3.2 A 11

1.106. nts4101p.pdf Size:100K _onsemi

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NTS4101P Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 Features Leading -20 V Trench for Low RDS(on) http://onsemi.com -2.5 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2x2 mm) 83 mW @ -4.5 V Pb-Free Package is Available -20 V 88 mW @ -3.6 V -1.37 A Applications High Side Load Switch 104 mW @ -2.5 V Chargin

1.107. nthd4102p-d.pdf Size:64K _onsemi

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NTHD4102P Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFETt Features Offers an Ultra Low RDS(ON) Solution in the ChipFET Package http://onsemi.com Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 V(BR)DSS RDS(ON) TYP ID MAX Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics 64 mW @ -4.5 V Simplifies Circuit Des

1.108. mmjt9410-d.pdf Size:73K _onsemi

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MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features Collector -Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com High DC Current Gain - hFE = 85 (Min) @ IC = 0.8 Adc POWER BJT = 60 (Min) @ IC = 3.0 Adc IC = 3.0 AMPERES Low Collector -Emitter Saturation Voltage - BVCEO = 30 VOLTS VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc

1.109. nths4101p-d.pdf Size:59K _onsemi

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NTHS4101P Power MOSFET -20 V, 6.7 A, P-Channel ChipFETt Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 http://onsemi.com making it an Ideal Device for Applications where Board Space is at a Premium V(BR)DSS RDS(on) TYP ID MAX Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin 21 mW @ -

1.110. 2sc4410.pdf Size:37K _panasonic

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Transistor 2SC4410 Silicon NPN epitaxial planer type For UHF amplification Unit: mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Allowing the small current and low voltage operation. High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maximum Ratings (Ta=25?C) Par

1.111. 2sc4410_e.pdf Size:41K _panasonic

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Transistor 2SC4410 Silicon NPN epitaxial planer type For UHF amplification Unit: mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Allowing the small current and low voltage operation. High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maximum Ratings (Ta=25?C) Par

1.112. ut4410.pdf Size:218K _utc

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UNISONIC TECHNOLOGIES CO., LTD UT4410 Power MOSFET N-CHANNEL 30-V (D-S) MOSFET DESCRIPTION As advanced N-channel logic level enhancement MOSFET, the UT4410 is produced using UTC’s high cell density, DMOS trench technology. which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. These devices can be par

1.113. utd410.pdf Size:258K _utc

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UNISONIC TECHNOLOGIES CO., LTD UTD410 Power MOSFET N-CHANNEL ENHANCEMENT MODE 1 DESCRIPTION SOT-223 The UTD410 can provide excellent RDS(ON) and low gate charge by using advanced trench technology. This UTD410 is suitable for using as a load switch or in PWM applications. FEATURES 1 * VDS=30V, ID=8A TO-252 * RDS(ON) =48m? @VGS =10V SYMBOL ORDERING INFORMATION

1.114. ut7410.pdf Size:280K _utc

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UNISONIC TECHNOLOGIES CO., LTD UT7410 Preliminary Power MOSFET 30V, 24A N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT7410 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. The UTC UT7410 is suitable for Load Switch and DC-DC converters applications, etc. FEATURES * R

1.115. itc14410.pdf Size:98K _gec_plessey

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JULY 1996 IT14410012D PRELIMINARY DATA DS4372-2.6 ITC14410012D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS (25?C) VCES 1200V n - Channel. IC(CONT) 100A Enhancement Mode. VCE(sat) 2.8V High Input Impedance. High Switching Speed. Latch-Free Operation. Low Forward Voltage Drop. Short Circuit Capability (10s). RATINGS Symbol Parameter Test Conditions Max. Un

1.116. gf9410.pdf Size:152K _general_semi

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GF9410 N-Channel Enhancement-Mode MOSFET V 30V R 30 ? I 7A DS DS(ON) m D SO-8 0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.05 (1.27) 0.228 (5.79) 0.04 (1.02) Dimensions in inches 1 4 and (millimeters) 0.245 (6.22) 0.165 (4.19) Min. 0.155 (3.94) 0.019 (0.48) x 45 0.020 (0.51) 0.010 (0.25) 0.009 (0.23) 0.013 (0.33) 0.050 (1.27) 0.007 (0.18) 0.035

1.117. 2sk410.pdf Size:50K _hitachi

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2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features High breakdown voltage You can decrease handling current. Included gate protection diode No secondarybreakdown Wide area of safe operation Simple bias circuitry No thermal runaway Outline 2SK410 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 180 V

1.118. jansr2n7410.pdf Size:52K _intersil

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JANSR2N7410 Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, March 1998 N-Channel Power MOSFET Features Description • 3.5A, 100V, rDS(ON) = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

1.119. irfr410_irfu410.pdf Size:62K _intersil

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IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power Features MOSFETs • 1.5A, 500V These are N-Channel enhancement mode silicon gate • rDS(ON) = 7.000Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the b

1.120. 2n4104.pdf Size:10K _semelab

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2N4104 Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTX

1.121. ssg0410.pdf Size:618K _secos

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SSG0410 N-Ch Enhancement Mode Power MOSFET 3.8 A, 100 V, RDS(ON) 158 m? Elektronische Bauelemente DESCRIPTION The SSG0410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage a

1.122. ssg4410n.pdf Size:441K _secos

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SSG4410N 13 A, 30 V, RDS(ON) 13.5 m? N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power L D management in portable and battery-powered

1.123. ssm0410.pdf Size:429K _secos

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SSM0410 3.5 A, 100V, RDS(ON) 220m? N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSM0410 provide the designer with best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The SOT-223 package is universally preferred for all

1.124. sgm0410.pdf Size:620K _secos

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SGM0410 3.5A , 100V , RDS(ON) 170 m? N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The SGM0410 provide the designer with the best A combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-89 package 4 Top View C

1.125. sgm0410s.pdf Size:482K _secos

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SGM0410S 2.2A , 100V , RDS(ON) 310 m? ? ? ? N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The SGM0410S provide the designer with the best A combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-89 package 4 T

1.126. bd410.pdf Size:167K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR BD410 TO-126 Plastic Package E C B ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 500 V Collector -Emitter Voltage VCEO 325 V Emitter Base Voltage VEBO 5.0 V Continuous Collector Current IC 1.0 A Peak Collector Current

1.127. krc410-411-414.pdf Size:366K _kec

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SEMICONDUCTOR KRC410, 411, 414 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 2.00 0.20 D 2 _ ·Simplify Circuit Design. B 1.25 0.15 + _ + C 0.90 0.10 3 ·Reduce a Quantity of Parts and Manufacturing Process. 1 D 0.3+0.10/-0.05 _

1.128. krc410e-414e.pdf Size:380K _kec

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SEMICONDUCTOR KRC410E~KRC414E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 1.60 0.10 D ·Simplify Circuit Design. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 ·Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.27+0.10/-0.05 _ ·H

1.129. krc410v_414v.pdf Size:49K _kec

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SEMICONDUCTOR KRC410V~KRC414V EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ·With Built-in Bias Resistors. ·Simplify Circuit Design. DIM MILLIMETERS 2 _ ·Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05 _ B 0.8 +0.05 ·High Packing Density. 1 3 _ C 0.5 + 0.05 _ D 0.3 +

1.130. 2sc4107.pdf Size:142K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4107 DESCRIPTION · ·With TO-220C package ·High breakdown voltage and high reliability ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/10A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maxi

1.131. buf410.pdf Size:265K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410 DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 850 V VCEO Collector-Emitter Voltage 4

1.132. 2sc4105.pdf Size:111K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4105 DESCRIPTION · ·With TO-220C package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBO

1.133. mj410.pdf Size:99K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ410 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 1A APPLICATIONS ·Designed for medium to high voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) S

1.134. 2sc4106.pdf Size:288K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4106 DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V

1.135. 2sc4108.pdf Size:211K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4108 DESCRIPTION ·With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide ASO(Safe Operating Area) APPLICATIONS ·400V/12A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (

1.136. 2sc4109.pdf Size:158K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4109 DESCRIPTION ·With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/16A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO

1.137. 2sd1410.pdf Size:177K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS ·Igniter applications ·High voltage switching applicatio

1.138. buf410a.pdf Size:105K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410A DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 1000 V VCEO Collector-Emitter Voltage

1.139. pt4410.pdf Size:1554K _htsemi

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PT4410 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 10.5m? RDS(ON), Vgs@4.5V, Ids@12A = 15m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Package Dimensions D D D D 8 7 6 5 1 2 3 4 S S S G Millimeter Millimeter REF.

1.140. 2sc4102.pdf Size:463K _htsemi

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2SC4102 TRANSISTOR (NPN) FEATURES SOT–323 ? High Breakdown Voltage ? Complements the 2SA1579 MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 120 V CBO 1. BASE V Collector-Emitter Voltage 120 V 2. EMITTER CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collector Power Dissipation 200 m

1.141. cem0410.pdf Size:737K _cet

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CEM0410 Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 3.4A, RDS(ON) = 120m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D D D Surface mount Package. 8 7 6 5 SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Paramet

1.142. wt4410m.pdf Size:676K _wietron

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WT4410M Surface Mount N-Channel Enhancement Mode MOSFET DRAIN CURRENT P b Lead(Pb)-Free 10 AMPERS DRAIN SOUCE VOLTAGE Features: 30 VOLTAGE *Super high dense cell design for low R DS(ON) RDS(ON) <11 m @VGS =10V ? RDS(ON) <15 m ?@VGS =4.5V *Rugged and Reliable *SO-8 Package 1 SO-8 Maximum Ratings ( TA=25 C Unless Other wise Specified) Rating Symbol Value Unite 30

1.143. wtk9410.pdf Size:877K _wietron

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WTK9410 Surface Mount N-Channel DRAIN CURRENT Enhancement Mode MOSFET 18 AMPERES DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free 30 VOLTAGE Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON) 1 RDS(ON)<5.5m?@VGS=10V RDS(ON)<6.2m?@VGS=4.5V SOP-8 RDS(ON)<8.0m?@VGS=2.5V * Rugged and Reliable. * SOP-8 Package. Maximu

1.144. aow410.pdf Size:254K _aosemi

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AOW410 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AOW410 is fabricated with SDMOSTM trench 150A technology that combines excellent RDS(ON) with low gate ID (at VGS=10V) charge & low Qrr.The result is outstanding efficiency with < 6.5mΩ RDS(ON) (at VGS=10V) controlled switching behavior. This universal technology is < 7.5mΩ RDS(ON) (a

1.145. ao7410.pdf Size:230K _aosemi

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AO7410 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO7410 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and ID (at VGS=10V) 1.7A operation with gate voltages as low as 2.5V. This RDS(ON) (at VGS=10V) < 55mΩ device is suitable for use as a load switch or in PWM RDS(ON) (at VGS =4.5V) < 65mΩ applications. RDS(ON) (

1.146. aon2410.pdf Size:226K _aosemi

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AON2410 30V N-Channel MOSFET General Description Product Summary VDS The AON2410 combines advanced trench MOSFET 30V technology with a low resistance package to provide ID (at VGS=4.5V) 8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS = 4.5V) < 21mΩ and battery protection applications. RDS(ON) (at VGS = 2.5V) < 28mΩ DFN 2x2B D Top View Bottom Vi

1.147. aot410l.pdf Size:344K _aosemi

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AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT410L/AOB410L is fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 150A gate charge & low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗) with controlled switching behavior. This universal RDS(ON)

1.148. aod4102.pdf Size:291K _aosemi

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AOD4102/AOI4102 30V N-Channel MOSFET General Description Product Summary VDS 30V The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS(ON) with ID (at VGS=10V) 19A low gate charge. This device is suitable for use in PWM, RDS(ON) (at VGS=10V) < 37mΩ load switching and general purpose applications. RDS(ON) (at VGS = 4.5V) < 64mΩ 100% UIS Tested

1.149. aon7410.pdf Size:338K _aosemi

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AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design VDS (V) = 30V to provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V) device is suitable for use in DC - DC converters and Load RDS(ON) < 20mΩ (VGS = 10V) Switch applications. RDS(ON) < 26mΩ (VGS = 4.5V) RoHS and Halogen-Free Compliant 100% UIS Tes

1.150. ao4410.pdf Size:180K _aosemi

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AO4410 30V N-Channel MOSFET General Description Product Summary The AO4410 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity, ID = 18A (VGS = 10V) body diode characteristics and ultra-low gate RDS(ON) < 5.5mΩ (VGS = 10V) resistance. This device is ideally suited for use as a RDS(ON) < 6.2mΩ (VGS = 4.5V) low side switch in Notebook C

1.151. aoi4102.pdf Size:291K _aosemi

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AOD4102/AOI4102 30V N-Channel MOSFET General Description Product Summary VDS 30V The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS(ON) with ID (at VGS=10V) 19A low gate charge. This device is suitable for use in PWM, RDS(ON) (at VGS=10V) < 37mΩ load switching and general purpose applications. RDS(ON) (at VGS = 4.5V) < 64mΩ 100% UIS Tested

1.152. aob410l.pdf Size:344K _aosemi

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AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT410L/AOB410L is fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 150A gate charge & low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗) with controlled switching behavior. This universal RDS(ON)

1.153. ap4410agm.pdf Size:57K _a-power

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AP4410AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 30V D D Ў Low On-resistance RDS(ON) 13.5m? D D Ў Fast Switching Characteristic ID 10A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,

1.154. ap4410gm.pdf Size:202K _a-power

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AP4410GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D D Ў Fast Switching D RDS(ON) 13.5m? D Ў Simple Drive Requirement ID 10A G S S SO-8 S Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resista

1.155. ap9410gm-hf.pdf Size:96K _a-power

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AP9410GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 30V D D Ў Low On-resistance RDS(ON) 6m? D D Ў Fast Switching ID 18A G S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistan

1.156. ap9410gmt-hf.pdf Size:58K _a-power

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AP9410GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Capable of 2.5V Gate Drive D BVDSS 30V Ў Simple Drive Requirement RDS(ON) 5.5m? Ў SO-8 Compatible ID 80A G Ў Low On-resistance S Ў RoHS Compliant & Halogen-Free D D D D Description Advanced Power MOSFETs from APEC provide the ? designer with the best combination of fas

1.157. ap9410gh-hf.pdf Size:94K _a-power

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AP9410GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-resistance D BVDSS 30V Ў Simple Drive Requirement RDS(ON) 6m? Ў Fast Switching Characteristic ID 75A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching, ruggedized devi

1.158. ap9410agh-hf.pdf Size:95K _a-power

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AP9410AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-resistance D BVDSS 30V Ў Simple Drive Requirement RDS(ON) 6m? Ў Fast Switching Characteristic ID 67A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching, ruggedized dev

1.159. ap9410gm.pdf Size:70K _a-power

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AP9410GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ЎSimple Drive Requirement BVDSS 30V Ў Ў Ў D D ЎLow On-resistance RDS(ON) 6m? Ў Ў Ў D D ЎFast Switching ID 18A Ў Ў Ў G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, r

1.160. ap9410agm-hf.pdf Size:57K _a-power

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AP9410AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 30V D D Ў Low On-resistance RDS(ON) 5.5m? D D Ў Fast Switching Characteristic ID 18A G Ў RoHS Compliant & Halogen-Free S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switc

1.161. mtn4410v8.pdf Size:312K _cystek

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Spec. No. : C397V8 Issued Date : 2012.03.14 CYStech Electronics Corp. Revised Date : 2012.03.15 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN4410V8 Features • Single Drive Requirement • Low On-resistance • Pb-free lead plating package Applications • Synchronous rectifier for DC/DC converters • Telecom secondary side rectification • High end s

1.162. mtn4410q8.pdf Size:305K _cystek

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Spec. No. : C397Q8 Issued Date : 2007.06.14 CYStech Electronics Corp. Revised Date : 2014.01.23 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTN4410Q8 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and halogen-free package Symbol O

1.163. mtn3410f3.pdf Size:289K _cystek

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Spec. No. : C795F3 Issued Date : 2011.03.01 CYStech Electronics Corp. Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS : 100V RDS(ON) : 20mΩ (max.) MTN3410F3 ID : 59A Description The MTN3410F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

1.164. mtn0410l3.pdf Size:446K _cystek

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Spec. No. : C792L3 Issued Date : 2010.07.16 CYStech Electronics Corp. Revised Date : Page No. : 1/7 N -Channel Logic Level Enhancement Mode MOSFET BVDSS 100V MTN0410L3 ID 3A 280mΩ RDSON(MAX) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package Equivalent Circuit Outline MTN0410L3 SOT-223 D S D G:Gate D:Drain G

1.165. mtn3410j3.pdf Size:330K _cystek

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Spec. No. : C433J3 Issued Date : 2008.12.24 CYStech Electronics Corp. Revised Date : 2010.07.22 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 100V ID 50A MTN3410J3 RDS(ON) 30mΩ Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol Outline MTN3410

1.166. apm9410k.pdf Size:169K _anpec

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APM9410 N-Channel Enhancement Mode MOSFET Features Pin Description SO-8 • 30V/8A , RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=23mΩ(typ.) @ VGS=4.5V S 1 8 D • Super High Dense Cell Design for Extremely • • • • S 2 7 D Low RDS(ON) S 3 6 D • Reliable and Rugged • • • • G 45 D • SO-8 Package • • • • Top View D Applications • Power Managem

1.167. apm4410.pdf Size:207K _anpec

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APM4410 N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/11.5A, RDS(ON) = 9mΩ(typ.) @ VGS = 10V S 1 8 D RDS(ON) =14.5mΩ(typ.) @ VGS = 4.5V S 2 7 D • High Density Cell Design • • • • S 3 6 D • Reliable and Rugged • • • • G 45 D • SO-8 Package • • • • SO - 8 D Applications • Power Management in Notebook Computer, G

1.168. apm9410.pdf Size:176K _anpec

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APM9410 N-Channel Enhancement Mode MOSFET Features Pin Description SO-8 • 30V/8A , RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=23mΩ(typ.) @ VGS=4.5V S 1 8 D • Super High Dense Cell Design for Extremely • • • • S 2 7 D Low RDS(ON) S 3 6 D • Reliable and Rugged • • • • G 45 D • SO-8 Package • • • • Top View D Applications • Power Managem

1.169. apm4101k.pdf Size:205K _anpec

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APM4101K Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 40V/9A, D2 D2 RDS(ON)= 12mΩ (typ.) @ VGS=10V RDS(ON)= 20mΩ (typ.) @ VGS=5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant) D1 D1 D2 D2 Applications G1 G2 Power Management in LCD Monitor/TV Inverter.

1.170. stm4410a.pdf Size:696K _samhop

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 S T M4410A S amHop Microelectronics C orp. J an 04 2005 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) Max R ugged and reliable. 9.5 @ V G S = 10V 30V 10A S urface Mount Package. 21 @ V G S = 4.5V S O-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless other

1.171. stb4410_stp4410.pdf Size:189K _samhop

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STB4410 Green Product STP4410 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). VDSS ID RDS(ON) (mΩ) Typ High power and current handling capability. 100V 75A 7.0 @ VGS=10V TO-220 & TO-263 package. D G STB SERIES STP SERIES TO-263(DD-PAK) TO-

1.172. stu410s_std410s.pdf Size:84K _samhop

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S TU/D410S S amHop Microelectronics C orp. ver1.1 Oct. 9, 2007 N-Channel Logic Level E nhancement Mode Field E ffect Transistor FEATUR ES PR ODUCT S UMMAR Y S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Ω Max R ugged and reliable. 20 @ VGS = 10V Surface Mount Package. 30A 40V ESD Protected. 30 @ VGS =4.5V D D D G G G S S STU SERIES STD SERIE

1.173. sdm4410.pdf Size:126K _samhop

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Green Product S DM4410 S amHop Microelectronics C orp. Mar.01,2006 ver1.2 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m Ω ) Max R ugged and reliable. 13.5 @ VG S = 10V 30V 10A S urface Mount Package. 20 @ VG S = 4.5V S O-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless

1.174. pa410bd.pdf Size:737K _unikc

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PA410BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 140mΩ @VGS = 10V 100V 10A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V TC = 25 ° C 10 ID Continuous Drain Current TC = 100 ° C 7 A IDM 30 Pulsed Drain Curren

1.175. cs3410_br.pdf Size:232K _crhj

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Silicon N-Channel Power MOSFET R ○ CS3410 BR General Description: VDSS 100 V CS3410 BR, the silicon N-channel Enhanced VDMOSFETs, ID 17 A PD (TC=25℃) 80 W is obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.176. cs3410_b3.pdf Size:247K _crhj

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Silicon N-Channel Power MOSFET R ○ CS3410 B3 General Description: VDSS 100 V CS3410 B3, the silicon N-channel Enhanced VDMOSFETs, is ID 17 A PD (TC=25℃) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.177. cs3410_b4.pdf Size:244K _crhj

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Silicon N-Channel Power MOSFET R ○ CS3410 B4 General Description: VDSS 100 V CS3410 B4, the silicon N-channel Enhanced VDMOSFETs, ID 17 A PD (TC=25℃) 80 W is obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.075 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.178. ntr4101p_ntrv4101p.pdf Size:120K _tysemi

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Product specification NTR4101P, NTRV4101P Trench Power MOSFET V(BR)DSS RDS(ON) TYP ID MAX -20 V, Single P-Channel, SOT-23 70 mW @ -4.5 V Features -20 V 90 mW @ -2.5 V -3.2 A • Leading -20 V Trench for Low RDS(on) 112 mW @ -1.8 V • -1.8 V Rated for Low Voltage Gate Drive • SOT-23 Surface Mount for Small Footprint P-Channel MOSFET • NTRV Prefix for Automotive and Other Applic

1.179. ftk4410d.pdf Size:505K _first_silicon

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SEMICONDUCTOR FTK4410D TECHNICAL DATA N-Channel MOSFET A I DESCRIPTION C J The FTK410D uses advanced trench te chnology to provide excellent RDS(ON) and low gate charge. DIM MILLIMETERS This device is suitable for use as a load switch A 6 50 ± 0 2 B 5 60 ± 0 2 or in PWM applications. C 5 20 ± 0 2 D 1 50 ± 0 2 E 2 70 ± 0 2 F 2 30 ± 0 1 H H 1 00 MAX I 2 30 ± 0

1.180. ftk4410.pdf Size:474K _first_silicon

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SEMICONDUCTOR FTK4410 TECHNICAL DATA DESCRIPTION N-Channel MOSFET The FTK4410 uses advanced trench technology to provide excellent RDS(ON), low gate charge .It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Schematic diagram D D D D GENERAL FEATURES 7 6 5 8 ● VDS = 30V,I = 7.5A D RDS(ON) < 20mΩ

1.181. ntr4101p-hf.pdf Size:1721K _kexin

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SMD Type MOSFET P-Channel MOSFET NTR4101P-HF (KTR4101P-HF) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-20V ● ID =-3.2 A 1 2 ● RDS(ON) < 85mΩ (VGS =-4.5V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 ● RDS(ON) < 120mΩ (VGS =-2.5V) ● RDS(ON) < 210mΩ (VGS =-1.8V) S Pb-Free Package May be Available. The G-Suffix Denotes a ●

1.182. ntr4101p-3.pdf Size:1732K _kexin

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SMD Type MOSFET P-Channel MOSFET NTR4101P (KTR4101P) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-20V ● ID =-3.2 A 1 2 ● RDS(ON) < 85mΩ (VGS =-4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 ● RDS(ON) < 120mΩ (VGS =-2.5V) 1.9 -0.2 ● RDS(ON) < 210mΩ (VGS =-1.8V) S 1. Gate 2. Source 3. Drain G D ■ Absolute Maximum Rating

1.183. ntr4101p.pdf Size:1721K _kexin

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SMD Type MOSFET P-Channel MOSFET NTR4101P (KTR4101P) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-20V ● ID =-3.2 A 1 2 ● RDS(ON) < 85mΩ (VGS =-4.5V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 ● RDS(ON) < 120mΩ (VGS =-2.5V) ● RDS(ON) < 210mΩ (VGS =-1.8V) S 1. Gate 2. Source 3. Drain G D ■ Absolute Maximum Ratings Ta =

1.184. ntr4101p-hf-3.pdf Size:1745K _kexin

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SMD Type MOSFET P-Channel MOSFET NTR4101P-HF (KTR4101P-HF) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-20V ● ID =-3.2 A 1 2 ● RDS(ON) < 85mΩ (VGS =-4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 ● RDS(ON) < 120mΩ (VGS =-2.5V) 1.9 -0.2 ● RDS(ON) < 210mΩ (VGS =-1.8V) S Pb-Free Package May be Available. The G-Suffix Denotes a

1.185. ao3410.pdf Size:294K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3410 AO3410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3410 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and ID = 5.0 A operation with gate voltages as low as 1.8V and as RDS(ON) < 28mΩ (VGS = 10V) high as 12V. This device is suitable for

1.186. 4410.pdf Size:1064K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology co., LTD 4410 N-Channel Enhancement-Mode MOSFET (30V, 10A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 13.5 @ VGS = 10V ,ID=10A 30V 10A 20 @ VGS = 4.5V,ID=5A Features · Advanced Trench Process Technology · High Density Cell Design for Ultra Low On-Resistance · Lead free product is acquired · Surface mount Package · Pin 1 /

See also transistors datasheet: 40974 , 40975 , 40976 , 40977 , 40979 , 40980 , 40TA045 , 40TA045D , 2N222 , 41008 , 41008A , 41009 , 41009A , 41010 , 41012 , 41013 , 41024 .

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