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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU526A/6
BU526A/7 .. BUL742C
BUL74A .. BUV47
BUV47A .. BUX83/9
BUX84 .. C945
C945LT1 .. CENW45
CF103 .. CJD47
CJD50 .. CMPTA63
CMPTA64 .. CS9018
CS9018D .. CSC1047
CSC1047B .. CSD1638
CSD1733 .. D11C1051
D11C1053 .. D39J6
D39J7 .. D45C4
D45C5 .. DMB2227A
DMJT9435 .. DTA123JUB
DTA123Y .. DTC143ZE
DTC143ZEA .. DZTA42
DZTA92 .. ECG361
ECG362 .. ESM138
ESM139 .. FC106
FC107 .. FJV4108R
FJV4109R .. FMMT5131
FMMT5132 .. FT4024
FT4025 .. GC181A
GC189 .. GES4926
GES4927 .. GI3638A
GI3641 .. GT3110A-2
GT311A .. HA7633
HA7723 .. HN2A26FS
HN2C01FE .. IDA1146
IDA1263 .. JE5401A
JE5401B .. KGS1002
KGS1003 .. KRA733F
KRA733U .. KRC668U
KRC669E .. KSA709-G
KSA709-O .. KSC2690A
KSC2690A-O .. KSD261-O
KSD261-R .. KSR2112
KSR2113 .. KT315N
KT315N-1 .. KT6111V
KT6112A .. KT8130A
KT8130B .. KT855V
KT856A .. KTA1807L
KTA1834D .. KTC9013
KTC9013S .. MA4103
MA4104 .. MH8211
MH8212 .. MJB44H11
MJB45H11 .. MJE4342
MJE4343 .. MM4209
MM4209A .. MMBT4965
MMBT5087L .. MMUN2215
MMUN2215L .. MP4052
MP4053 .. MPQ5858
MPQ5910 .. MPS929
MPS929A .. MRF455
MRF458 .. NA01F
NA01FG .. NB011HJ
NB011HK .. NB211EG
NB211EH .. NESG2021M16
NESG2030M04 .. NPS3903R
NPS3904 .. NSS60200LT1G
NSS60201LT1G .. OC480
OC480K .. PBSS4021PT
PBSS4032ND .. PEMD18
PEMD19 .. PN4403
PN4888 .. Q-00269A
Q-00369C .. RN1317
RN1318 .. RN2411
RN2412 .. RT657M
RT679M .. SD409
SD410 .. SGS911
SGS912 .. SRA2203S
SRA2203SF .. STB13007DT4
STB205L .. SUT465N
SUT466N .. TA1763
TA1763A .. TI814
TI815 .. TIPL757
TIPL757A .. TN3444
TN3467 .. TP4889
TP4890 .. UMH13N
UMH15N .. UN6218
UN6219 .. ZT1702
ZT1708 .. ZTX3701L
ZTX3701M .. ZXTN649F
ZXTNS618MC .. ZXTPS720MC
 
410 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

410 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 410

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 125

Maximum collector-base voltage |Ucb|, V: 200

Maximum collector-emitter voltage |Uce|, V: 200

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 7

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of 410 transistor: TO3

410 Equivalent Transistors - Cross-Reference Search

410 PDF doc:

1.1. 2n410.pdf Size:320K _rca

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1.2. 2n4410re.pdf Size:183K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4410/D Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 1 Rating Symbol Value Unit TO92 (TO226AA) CollectorEmitter Voltage VCEO 80 Vdc CollectorBase Voltage VCBO 120 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 250 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watts Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage(1) V(BR)CEO 80 Vdc (IC = 1.0 mAdc, IB = 0) Col

1.3. mj410rev.pdf Size:139K _motorola

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Order this document MOTOROLA by MJ410/D SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon 5 AMPERE Transistors POWER TRANSISTOR NPN SILICON . . . designed for medium to high voltage inverters, converters, regulators and 200 VOLTS switching circuits. 100 WATTS High CollectorEmitter Voltage VCEO = 200 Volts DC Current Gain Specified @ 1.0 and 2.5 Adc IIIIIIIIIIIIIIIIIIIIIII Low CollectorEmitter Saturation Voltage VCE(sat) = 0.8 Vdc @ IC = 1.0 Adc IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIII III IIII III MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIII III IIII III IIII III Rating Symbol Value Unit IIIIIIIIIIIII IIIIII IIII III IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIIIIIIIIIIII IIIIII IIII III IIII III IIII III CollectorEmitter Voltage VCEO 200 Vdc IIIIIIIIIIIII IIIIII IIIIIIIII

1.4. mmjt9410.pdf Size:95K _motorola

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Order this document MOTOROLA by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA MMJT9410 Preliminary Data Sheet Motorola Preferred Device Bipolar Power Transistors NPN Silicon Collector Emitter Sustaining Voltage VCEO(sus) POWER BJT = 30 Vdc (Min) @ IC = 10 mAdc IC = 3.0 AMPERES High DC Current Gain hFE BVCEO = 30 VOLTS = 85 (Min) @ IC = 1.0 Adc VCE(sat) = 0.2 VOLTS = 60 (Min) @ IC = 3.0 Adc Low Collector Emitter Saturation Voltage VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 5.0 Adc SOT223 Surface Mount Packaging C 2,4 CASE 318E04, Style 1 C B 1 E 3 Schematic B C E Top View Pinout IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (TC = 25C unless otherwise noted) I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Rating SymbolIIIII Unit Value IIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII CollectorEmitter Voltage VCEO 30 Vdc IIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIIII IIII III

1.5. vn2410l.rev1.pdf Size:56K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by VN2410L/D TMOS FET Transistor VN2410L 3 DRAIN NChannel Enhancement 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 DrainSource Voltage VDSS 240 Vdc 2 3 DrainGate Voltage VDGR 60 Vdc GateSource Voltage CASE 2904, STYLE 22 Continuous VGS 20 Vdc TO92 (TO226AA) Nonrepetitive (tp ? 50 s) VGSM 40 Vpk Continuous Drain Current ID 200 mAdc Pulsed Drain Current IDM 500 mAdc Power Dissipation @ TC = 25C PD 350 mW Derate above 25C 2.8 mW/C Operating and Storage Temperature TJ, Tstg C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R?JA 312.5 C/W Maximum Lead Temperature for Soldering TL 300 C Purposes, 1/16? from case for 10 seconds ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit STATIC CHARACTERISTICS DrainSource Breakdown Voltage V(BR)DSS 240 Vdc (VGS = 0, ID = 10

1.6. bfg410w_4.pdf Size:85K _philips

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DISCRETE SEMICONDUCTORS BFG410W NPN 22 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1 emitter High transition frequency 2 base Emitter is thermal lead 3 emitter Low feedback capacitance. 4 collector APPLICATIONS RF front end Wideband applications, e.g. analog and digital cellular 34 handbook, halfpage telephones, cordless telephones (PHS, DECT, etc.) Radar detectors Pagers 21 Satellite television tuners (SATV) Top view MSB842 High frequency oscillators. DESCRIPTION Marking code: P4. NPN double polysilicon wideband transistor with buried Fig.1 Simplified outline SOT343R. layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL PARAMETER

1.7. bf410a_410b_410c_410d.pdf Size:32K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors December 1990 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D DESCRIPTION PINNING - TO-92 VARIANT Asymmetrical N-channel planar 1 = drain epitaxial junction field-effect 2 = source transistors in a plastic TO-92 variant; 3 = gate intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low 1 noise figure. Thanks to these special handbook, halfpage 2 features the BF410 is very suitable for 3 d g applications such as the RF stages in s FM portables (type A), car radios MAM257 (type B) and mains radios (type C) or the mixer stage (type D). Fig.1 Simplified outline and symbol QUICK REFERENCE DATA Drain-source voltage VDS max. 20 V Drain current (DC or ave

1.8. pbss9410pa.pdf Size:167K _philips

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PBSS9410PA 100 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 01 11 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS8510PA. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -10

1.9. bfg410w.pdf Size:371K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BFG410W NPN 22 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29 NXP Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING ? Very high power gain PIN DESCRIPTION ? Low noise figure 1emitter ? High transition frequency 2 base ? Emitter is thermal lead 3emitter ? Low feedback capacitance. 4 collector APPLICATIONS ? RF front end ? Wideband applications, e.g. analog and digital cellular 3 4 handbook, halfpage telephones, cordless telephones (PHS, DECT, etc.) ? Radar detectors ? Pagers 21 ? Satellite television tuners (SATV) Top view MSB842 ? High frequency oscillators. DESCRIPTION Marking code: P4. NPN double polysilicon wideband transistor with buried Fig.1 Simplified outline SOT343R. layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNI

1.10. sd4100.pdf Size:58K _st

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SD4100 PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to introduction and SGS-THOMSON assumes no liability for use of information contained herein. RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS .470 - 860 MHz .28 VOLTS .CLASS AB PUSH PULL .DESIGNED FOR HIGH POWER LINEAR OPERATION .HIGH SATURATED POWER CAPABILITY .INTERNAL INPUT/OUTPUT MATCHING .437 x .450 4LFL (M173) NETWORKS PROVIDE HIGH BALANCED epoxy sealed IMPEDANCES FOR SIMPLIFIED CIRCUIT ORDER CODE BRANDING DESIGN AND WIDE INSTANTANEOUS SD4100 SD4100 BANDWIDTH .GAIN = 8.5 dB MIN. PIN CONNECTION .P 100 W MIN. CW OUT = .P 125 W PEAK SYNC. OUT = DESCRIPTION The SD4100 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter bal- last resistors for high linearity Class AB operation

1.11. buf410a.pdf Size:146K _st

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BUF410A High voltage fast-switching NPN power transistor Features High voltage capability Very high switching speed Minimum lot-to-lot spread for reliable operation Low base-drive requirements Applications 3 2 1 Switch mode power supplies TO-247 Motor control Description The BUF410A is manufactured using high voltage Figure 1. Internal schematic diagram multi epitaxial planar technology for high switching speeds and high voltage capacity. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Table 1. Device summary Order code Marking Package Packaging BUF410A BUF410A TO-247 Tube March 2008 Rev 3 1/9 www.st.com 9 Electrical ratings BUF410A 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCEV Collector-emitter voltage (VBE = -1.5 V) 1000 V VCEO Collector-emitter voltage (IB = 0) 450 V VEBO Emitter-base voltage (IC = 0) 7 V IC C

1.12. buf410.pdf Size:69K _st

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BUF410 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: 3 SWITCH MODE POWER SUPPLIES 2 MOTOR CONTROL 1 DESCRIPTION TO-218 The BUF410 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in INTERNAL SCHEMATIC DIAGRAM high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = -1.5 V) 850 V CEV BE VCEO Collector-Emitter Voltage (IB = 0) 450 V VEBO Emitter-Base Voltage (IC = 0) 7 V I Collector Current 15 A C I Collector Peak Current (t < 5 ms) 30 A CM p IB Base C

1.13. 2sd1410a.pdf Size:183K _toshiba

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1.14. 2sd1410.pdf Size:163K _toshiba

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1.15. ssm6j410tu_100119.pdf Size:217K _toshiba

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SSM6J410TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?) SSM6J410TU 0 Power Management Switch Applications Unit: mm 0 High-Speed Switching Applications 4-V drive Low ON-resistance RDS(ON) = 393m? (max) (@VGS = 4 V) RDS(ON) = 216m? (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30 V Gate-Source voltage VGSS 20 V DC ID (Note1) -2.1 1,2,5,6 : Drain Drain current A 3 : Gate Pulse IDP(Note1) -4.2 4 : Source PD(Note2) 500 Power dissipation mW t = 10s 1000 Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C JEDEC ? Note: Using continuously under heavy loads (e.g. the application of high JEITA ? temperature/current/voltage and the significant change in TOSHIBA 2-2T1D temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 7.0mg (typ.) op

1.16. rn2410-rn2411.pdf Size:108K _toshiba

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RN2410,RN2411 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2410,RN2411 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1410, RN1411 Equivalent Circuit Maximum Ratings (Ta = 25 C) JEDEC TO-236MOD EIAJ SC-59 Characterisstic Symbol Rating Unit TOSHIBA 2-3F1A Weight: 0.012g Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 C Storage temperature range Tstg -55~150 C Electrical Characteristics (Ta = 25 C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current ICBO ? VCB = -50V, IE = 0 ? ? -100 nA Emitter cut-off current IEBO ? VEB = -5V, IC = 0 ? ? -100 nA

1.17. mp4104_en_wm_20061027.pdf Size:165K _toshiba

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MP4104 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4104 Industrial Applications High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C) High collector current: IC (DC) = 4 A (max) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1.5 A) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 6 V JEDEC ? DC IC 4 Collector current A JEITA ? Pulse ICP 6 TOSHIBA 2-25A1A Continuous base current IB 0.5 A Collector power dissipation Weight: 2.1 g (typ.) PC 2.0 W (1-device operation) Collector power dissipation PT 4.0 W (4-device operation) Junction temperature Tj 150 C Storage temperatur

1.18. mp4101_en_wm_20061027.pdf Size:167K _toshiba

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MP4101 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4101 Industrial Applications High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C) High collector current: IC (DC) = 4 A (max) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Zener diode included between collector and base. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 10 V Collector-emitter voltage VCEO 60 10 V Emitter-base voltage VEBO 6 V JEDEC ? DC IC 4 JEITA ? Collector current A Pulse ICP 6 TOSHIBA 2-25A1A Continuous base current IB 0.5 A Weight: 2.1 g (typ.) Collector power dissipation PC 2.0 W (1-device operation) Collector power dissipation PT 4.0 W (4-device oper

1.19. rn1410_rn1411.pdf Size:103K _toshiba

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RN1410,RN1411 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1410,RN1411 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2410, RN2411 Equivalent Circuit Maximum Ratings (Ta = 25C) JEDEC TO-236MOD Characteristic Symbol Rating Unit EIAJ SC-59 Collector-base voltage VCBO 50 V TOSHIBA 2-3F1A Collector-emitter voltage VCEO 50 V Weight: 0.012g Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 C Storage temperature range Tstg -55~125 C Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current ICBO ? VCB = 50V, IE = 0 ? ? 100 nA Emitter cut-off current IEBO ? VEB = 5V, IC = 0 ? ? 100 nA DC current gain hFE ? VCE = 5V,

1.20. mp4410_en_wm_20061027.pdf Size:152K _toshiba

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MP4410 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-?-MOSV in One) MP4410 Industrial Applications High Power, High Speed Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching 4-V gate drivability Small package by full molding (SIP 12 pin) High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25C) Low drain-source ON resistance: RDS (ON) = 0.12 ? (typ.) Low leakage current: IGSS = 10 ?A (max) (VGS = 16 V) IDSS = 100 ?A (max) (VDS = 60 V) Enhancement-mode: Vth = 0.8 to 2.0 V (ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit JEDEC ? Drain-source voltage VDSS 60 V JEITA ? Gate-source voltage VGSS 20 V Drain current ID 5 A TOSHIBA 2-32C1D Peak drain current IDP 20 A Weight: 3.9 g (typ.) Drain power dissipation PD 2.2 W (1-device operation) Ta = 25C 4.4 Drain power dissipation PT W (4-device operation) Tc = 25C

1.21. ech8410.pdf Size:286K _sanyo

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ECH8410 Ordering number : ENA1331 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8410 Applications Features Low ON-resistance. 4V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 12 A Drain Current (Pulse) IDP PW?10?s, duty cycle?1% 60 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2?0.8mm) 1.6 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 ?A Gate-to-Source Leakage Current IGSS VGS=16V, VDS=0V 10 ?A Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs

1.22. 2sc4106.pdf Size:92K _sanyo

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Ordering number:EN2471A NPN Triple Diffused Planar Silicon Transistor 2SC4106 400V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2010C Wide ASO. [2SC4106] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB 2.55 2.55 EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 500 V Collector-to-Emitter Voltage VCEO 400 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 7 A Collector Current (Pulse) ICP PW? 300 s, duty cycle? 10% 14 A Base Current IB 3 A Collector Dissipation PC 1.75 W Tc=25?C 50 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=

1.23. 2sc4108.pdf Size:93K _sanyo

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Ordering number:EN2473A NPN Triple Diffused Planar Silicon Transistor 2SC4108 400V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2022A Wide ASO. [2SC4108] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0 1.6 1.4 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 500 V Collector-to-Emitter Voltage VCEO 400 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 12 A Collector Current (Pulse) ICP PW? 300 s, duty cycle? 10% 25 A Base Current IB 4 A Collector Dissipation PC 2.5 W Tc=25?C 100 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VC

1.24. 2sc4104.pdf Size:19K _sanyo

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Ordering number:EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applications Features Package Dimensions High fT. unit:mm Small reverse transfer capacitance. 2018A Adoption of FBET process. [2SA1580/2SC4104] C : Collector B : Base E : Emitter ( ) : 2SA1580 SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()70 V Collector-to-Emitter Voltage VCEO ()60 V Emitter-to-Base Voltage VEBO ()4 V Collector Current IC ()50 mA Collector Current (Pulse) ICP ()100 mA Collector Dissipation PC 200 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=()40V, IE=0 ()0.1 A Emitter Cutoff Current IEBO VEB=()3V, IC=0 ()1.0 A DC Current Gain hFE VCE=()10V, IC=()10mA 60* 270* G

1.25. 2sk4101ls.pdf Size:45K _sanyo

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Ordering number : ENA0745 2SK4101LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4101LS Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V IDc*1 Limited only by maximum temperature 7 A Drain Current (DC) IDpack*2 SANYO’s ideal heat dissipation condition 6.4 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% 28 A 2.0 W Allowable Power Dissipation PD Tc=25°C (SANYO’s ideal heat dissipation condition) 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *3 EAS 289 mJ Avalanche Cu

1.26. 2sc4107.pdf Size:93K _sanyo

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Ordering number:EN2472A NPN Triple Diffused Planar Silicon Transistor 2SC4107 400V/10A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2010C Wide ASO. [2SC4107] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB 2.55 2.55 Specifications EIAJ : SC-46 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 500 V Collector-to-Emitter Voltage VCEO 400 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 10 A Collector Current (Pulse) ICP PW? 300 s, duty cycle? 10% 20 A Base Current IB 3.5 A Collector Dissipation PC 1.75 W Tc=25?C 60 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO V

1.27. 2sc4109.pdf Size:95K _sanyo

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Ordering number:EN2474A NPN Triple Diffused Planar Silicon Transistor 2SC4109 400V/16A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2022A Wide ASO. [2SC4109] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0 1.6 1.4 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 500 V Collector-to-Emitter Voltage VCEO 400 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 16 A Collector Current (Pulse) ICP PW? 300 s, duty cycle? 10% 32 A Base Current IB 6 A Collector Dissipation PC 2.5 W Tc=25?C 140 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VC

1.28. 2sc4105.pdf Size:92K _sanyo

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Ordering number:EN2470A NPN Triple Diffused Planar Silicon Transistor 2SC4105 400V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2010C Wide ASO. [2SC4105] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 0.8 1 : Base 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB 2.55 2.55 EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 500 V Collector-to-Emitter Voltage VCEO 400 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 4 A Collector Current (Pulse) ICP PW? 300 s, duty cycle? 10% 8 A Base Current IB 1.5 A Collector Dissipation PC 1.75 W Tc=25?C 40 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=

1.29. tf410.pdf Size:313K _sanyo

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TF410 Ordering number : ENA2007 SANYO Semiconductors DATA SHEET N-Channel Silicon Junction FET Impedance Converter, TF410 Infrared Sensor Applications Applications Impedance conversion, infrared sensor applications Features Ultrasmall package facilities miniaturization in end products : 1.0mm?0.6mm?0.27mm (max 0.3mm) Small IGSS : max --500pA (VGSS= --20V, VDS=0V) Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz) Halogen free compliance Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGDS --40 V Gate Current IG 10 mA Drain Current ID 1 mA Allowable Power Dissipation PD 30 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Package Dimensions Product & Package Information unit : mm (typ) Package : USFP 7055-003 JEITA, JEDEC : - Minimum Packing Quantity : 10,000 pcs./reel 0.6 0.2 0.11 Packing Type: TL Marking 3 3

1.30. mch3410.pdf Size:27K _sanyo

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Ordering number : ENN6864 MCH3410 N-Channel Silicon MOSFET MCH3410 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2167 4V drive. [MCH3410] 0.3 0.15 3 1 2 0.65 2.0 1 : Gate 2 : Source 3 : Drain Specifications SANYO : MCPH3 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 2.0 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 8.0 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2 0.8mm) 0.9 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0 1 A Gate-to-Source Leakage Current IGSS VGS=16V, VDS=0 10 A Cutoff Volta

1.31. cph3410.pdf Size:28K _sanyo

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Ordering number : ENN6777 CPH3410 N-Channel Silicon MOSFET CPH3410 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3410] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 : Gate 2 : Source 3 : Drain Specifications SANYO : CPH3 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID 2.5 A Drain Current (Pulse) IDP PW?10s, duty cycle?1% 10 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2 0.8mm) 1 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 20 V Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0 1 A Gate-to-Source Leakage Current IGSS VGS=8V, VDS=0 10 A Cutoff V

1.32. fjv4106r.pdf Size:89K _fairchild_semi

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FJV4106R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=10K?, R2=47K?) Complement to FJV3106R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R76 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -10 V IC Collector Current -100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -10A, IE=0 -50 V BVCEO Collector-Emitter Breakdown Voltage IC= -100A, IB=0 -50 V ICBO Collector Cut-off Current VCB= -40V, IE=0 -0.1 A hFE DC Current Gain VCE= -5V, IC= -5

1.33. fdg410nz.pdf Size:283K _fairchild_semi

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March 2009 FDG410NZ Single N-Channel PowerTrench MOSFET 20 V, 2.2 A, 70 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 70 m? at VGS = 4.5 V, ID = 2.2 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 77 m? at VGS = 2.5 V, ID = 2.0 A synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulaters, providing an Max rDS(on) = 87 m? at VGS = 1.8 V, ID = 1.8 A extremely low rDS(on) and gate charge (Qg) in a small package. Max rDS(on) = 115 m? at VGS = 1.5 V, ID = 1.5 A Applications HBM ESD protection level > 2 kV (Note 3) High performance trench technology for extremely low rDS(on) DC/DC converter Power management High power and current handling capability Load switch Fast switching speed Low gate charge RoHS Compliant S D D D 1 6 D D 2 5 D G D 3 4 S G D SC70-6 MOSFET Maximum Ratings TA = 25 C unless ot

1.34. fjv4102r.pdf Size:55K _fairchild_semi

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FJV4102R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=10K?, R2=10K?) Complement to FJV3102R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R72 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -10 V IC Collector Current -100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -10A, IE=0 -50 V BVCEO Collector-Emitter Breakdown Voltage IC= -100A, IB=0 -50 V ICBO Collector Cut-off Current VCB= -40V, IE=0 -0.1 A hFE DC Current Gain VCE= -5V, IC= -5m

1.35. fjv4109r.pdf Size:52K _fairchild_semi

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FJV4109R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=4.7K?) Complement to FJV3109R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R79 R B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100A, IE=0 -40 V BVCEO Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -40 V ICBO Collector Cut-off Current VCB= -30V, IE=0 -0.1 A hFE DC Current Gain VCE= -5V, IC= -1mA 100 600 VCE (

1.36. fnb41060.pdf Size:905K _fairchild_semi

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January 2010 TM Motion-SPM FNB41060 Smart Power Module Features General Description It is an advanced motion-smart power module (Motion-SPMTM) 600V-10A 3-phase IGBT inverter bridge including control ICs that Fairchild has newly developed and designed to provide for gate driving and protection very compact and high performance ac motor drives mainly tar- Easy PCB layout due to built-in bootstrap diode and VS out- geting low-power inverter-driven application like air conditioner put and washing machine. It combines optimized circuit protection and drive matched to low-loss IGBTs. System reliability is fur- Divided negative dc-link terminals for inverter current sensing ther enhanced by the integrated under-voltage lock-out protec- applications tion, short-circuit protection, and temperature monitoring. The Single-grounded power supply due to built-in HVIC high speed built-in HVIC provides opto-coupler-less single-sup- ply IGBT gate driving capability that f

1.37. fjv4108r.pdf Size:55K _fairchild_semi

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FJV4108R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=47K?, R2=22K?) Complement to FJV3108R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R78 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -10 V IC Collector Current -100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -10A, IE=0 -50 V BVCEO Collector-Emitter Breakdown Voltage IC= -100A, IB=0 -50 V ICBO Collector Cut-off Current VCB= -40V, IE=0 -0.1 A hFE DC Current Gain VCE= -5V, IC= -5

1.38. fdma410nz.pdf Size:222K _fairchild_semi

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April 2009 FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.5 A, 23 m? Features General Description Max rDS(on) = 23 m? at VGS = 4.5 V, ID = 9.5 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 29 m? at VGS = 2.5 V, ID = 8.0 A optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET Max rDS(on) = 36 m? at VGS = 1.8 V, ID = 4.0 A leadframe. Max rDS(on) = 50 m? at VGS = 1.5 V, ID = 2.0 A Applications HBM ESD protection level > 2.5 kV (Note 3) Li-lon Battery Pack Low Profile-0.8 mm maximum in the new package MicroFET Baseband Switch 2x2 mm Load Switch Free from halogenated compounds and antimony oxides DC-DC Conversion RoHS Compliant Pin 1 G D D Bottom Drain Contact D 1 6 D Drain Source D 5 2 D 3 4 G S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Sour

1.39. nds9410a.pdf Size:77K _fairchild_semi

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1.40. fds4410a.pdf Size:112K _fairchild_semi

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May 2005 FDS4410A Single N-Channel, Logic-Level, PowerTrench MOSFET Features General Description 10 A, 30 V. RDS(ON) = 13.5 m? @ VGS = 10 V This N-Channel Logic Level MOSFET is produced using Fair- RDS(ON) = 20 m? @ VGS = 4.5 V child Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and Fast switching speed yet maintain superior switching performance. Low gate charge These devices are well suited for low voltage and battery High performance trench technology for extremely low powered applications where low in-line power loss and fast RDS(ON) switching are required. High power and current handling capability D 5 4 D D 6 3 D 7 2 G S SO-8 S 8 1 S Pin 1 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter Ratings Units VDSS DrainSource Voltage 30 V VGSS GateSource Voltage 20 V ID Drain Current Continuous (Note 1a) 10 A Pulsed 50 PD Power Dissipation

1.41. fjv4107r.pdf Size:56K _fairchild_semi

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FJV4107R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=22K?, R2=47K?) Complement to FJV3107R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R77 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -10 V IC Collector Current -100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -10A, IE=0 -50 V BVCEO Collector-Emitter Breakdown Voltage IC= -100A, IB=0 -50 V ICBO Collector Cut-off Current VCB= -40V, IE=0 -0.1 A hFE DC Current Gain VCE= -5V, IC= -5

1.42. fjv4105r.pdf Size:88K _fairchild_semi

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FJV4105R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=4.7K?, R2=10K?) Complement to FJV3105R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R75 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -10 V IC Collector Current -100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -10A, IE=0 -50 V BVCEO Collector-Emitter Breakdown Voltage IC= -100A, IB=0 -50 V ICBO Collector Cut-off Current VCB= -40V, IE=0 -0.1 A hFE DC Current Gain VCE= -5V, IC= -

1.43. fdme410nzt.pdf Size:299K _fairchild_semi

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February 2010 FDME410NZT N-Channel PowerTrench MOSFET 20 V, 7 A, 26 m? Features General Description This Single N-Channel MOSFET has been designed using Max rDS(on) = 26 m? at VGS = 4.5 V, ID = 7 A Fairchild Semiconductors advanced Power Trench process to Max rDS(on) = 31 m? at VGS = 2.5 V, ID = 6 A optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET Max rDS(on) = 39 m? at VGS = 1.8 V, ID = 5 A leadframe. Max rDS(on) = 53 m? at VGS = 1.5 V, ID = 4 A Applications Low profile: 0.55 mm maximum in the new package Li-lon Battery Pack MicroFET 1.6x1.6 Thin Baseband Switch Free from halogenated compounds and antimony oxides Load Switch HBM ESD protection level > 1800V (Note3) DC-DC Conversion RoHS Compliant G D D Pin 1 D D D D S D S G D BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 20 V VGS Gate to Source Voltage 8 V Drain Current

1.44. 2n4410.pdf Size:294K _fairchild_semi

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Discrete POWER & Signal Technologies 2N4410 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V V Collector-Base Voltage 120 V CBO VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units

1.45. fjv4101r.pdf Size:55K _fairchild_semi

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FJV4101R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=4.7K?, R2=4.7K?) Complement to FJV3101R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R71 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -10 V IC Collector Current -100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -10A, IE=0 -50 V BVCEO Collector-Emitter Breakdown Voltage IC= -100A, IB=0 -50 V ICBO Collector Cut-off Current VCB= -40V, IE=0 -0.1 A hFE DC Current Gain VCE= -5V, IC=

1.46. nds8410a.pdf Size:186K _fairchild_semi

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1.47. fjv4104r.pdf Size:89K _fairchild_semi

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FJV4104R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=47K?, R2=47K?) Complement to FJV3104R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R74 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -10 V IC Collector Current -100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -10A, IE=0 -50 V BVCEO Collector-Emitter Breakdown Voltage IC= -100A, IB=0 -50 V ICBO Collector Cut-off Current VCB= -40V, IE=0 -0.1 A hFE DC Current Gain VCE= -5V, IC= -5

1.48. fna41060.pdf Size:924K _fairchild_semi

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January 2010 TM Motion-SPM FNA41060 Smart Power Module Features General Description It is an advanced motion-smart power module (Motion-SPMTM) 600V-10A 3-phase IGBT inverter bridge including control ICs that Fairchild has newly developed and designed to provide for gate driving and protection very compact and high performance ac motor drives mainly tar- Easy PCB layout due to built-in bootstrap diode and VS out- geting low-power inverter-driven application like air conditioner put and refrigerator. It combines optimized circuit protection and drive matched to low-loss IGBTs. System reliability is further Divided negative dc-link terminals for inverter current sensing enhanced by the integrated under-voltage lock-out protection, applications short-circuit protection, and temperature monitoring. The high Single-grounded power supply due to built-in HVIC speed built-in HVIC provides opto-coupler-less single-supply IGBT gate driving capability that further re

1.49. fjv4103r.pdf Size:56K _fairchild_semi

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FJV4103R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=22K?, R2=22K?) Complement to FJV3103R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R73 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -10 V IC Collector Current -100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -10A, IE=0 -50 V BVCEO Collector-Emitter Breakdown Voltage IC= -100A, IB=0 -50 V ICBO Collector Cut-off Current VCB= -40V, IE=0 -0.1 A hFE DC Current Gain VCE= -5V, IC= -5m

1.50. fdr4410.pdf Size:220K _fairchild_semi

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April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost 9.3 A, 30 V. RDS(ON) = 0.013 ? @ VGS = 10 V alternative to the popular Si4410DY. RDS(ON) = 0.020 ? @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). The SuperSOTTM-8 package is 40% smaller than the SO-8 package. Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability. The SuperSOTTM-8 advanced package design and optimized pinout allow the typical power dissipation to be similar to the bigger SO-8 package. SOIC-16 SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 5 4 S D D 3 S 6 7 2 G D D 8 1 pin 1 D TM SuperSOT -8 Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter FDR4410 Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V ID Draint Current - Continuous (Note 1a) 9.3 A - Pulsed 40 PD Max

1.51. irfr5410.pdf Size:215K _international_rectifier

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PD - 9.1533A IRFR/U5410 HEXFET Power MOSFET l Ultra Low On-Resistance D l P-Channel VDSS = -100V l Surface Mount (IRFR5410) l Straight Lead (IRFU5410) RDS(on) = 0.205W l Advanced Process Technology G l Fast Switching ID = -13A l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. D-Pak I-Pak TO-252AA TO-251AA The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Abs

1.52. irfp2410.pdf Size:147K _international_rectifier

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Preliminary Data Sheet PD - 9.1251 IRFP2410 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating VDSS = 100V Repetitive Avalanche Rated 175C Operating Temperature RDS(on) = 0.025? Fast Switching Ease of Paralleling ID = 61A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirement

1.53. irlr3410.pdf Size:158K _international_rectifier

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PD - 91607B IRLR/U3410 HEXFET Power MOSFET Logic Level Gate Drive D Ultra Low On-Resistance VDSS = 100V Surface Mount (IRLR3410) Straight Lead (IRLU3410) RDS(on) = 0.105? Advanced Process Technology G Fast Switching ID = 17A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. D -PA K I-PAK The D-PAK is designed for surface mounting using TO-252AA TO-251AA vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through- hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Ab

1.54. irfr3410.pdf Size:140K _international_rectifier

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PD - 94505 IRFR3410 IRFU3410 HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 39m? 31A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3410 IRFU3410 Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 100 V VGS Gate-to-Source Voltage 20 ID @ TC = 25C Continuous Drain Current, VGS @ 10V 31 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 22 A IDM Pulsed Drain Current 125 PD @TC = 25C Maximum Power Dissipation 110 W PD @TA = 25C Maximum Power Dissipation 3.0 Linear Derating Factor 0.71 mWC dv/dt Peak Diode Recovery dv/dt ? 15 V/ns TJ Operating Junction and -55 to + 175 C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Ty

1.55. irf7410.pdf Size:102K _international_rectifier

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PD - 94025 IRF7410 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 7m?@VGS = -4.5V -16A Surface Mount 9m?@VGS = -2.5V -13.6A Available in Tape & Reel 13m?@VGS = -1.8V -11.5A Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques to achieve the extremely low on-resistance S D per silicon area. This benefit provides the designer 3 6 S D with an extremely efficient device for use in battery and load management applications.. 4 5 G D The SO-8 has been modified through a customized SO-8 Top View leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Absolute Maximum Ratings Par

1.56. irfl4105.pdf Size:168K _international_rectifier

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PD- 91381A IRFL4105 HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.045? Fast Switching G Fully Avalanche Rated ID = 3.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. SOT-223 Its unique package design allows for easy automatic pick- and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is po

1.57. irfr4105.pdf Size:144K _international_rectifier

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PD - 91302C IRFR/U4105 HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR4105) VDSS = 55V Straight Lead (IRFU4105) Fast Switching RDS(on) = 0.045? Fully Avalanche Rated G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. D -P AK I-PA K The straight lead version (IRFU series) is for through- T O-252AA TO-251AA hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC

1.58. si4410dy.pdf Size:93K _international_rectifier

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PD - 91853C Si4410DY HEXFET Power MOSFET N-Channel MOSFET A A Low On-Resistance 1 8 S D VDSS = 30V Low Gate Charge 2 7 S D Surface Mount 3 6 S D Logic Level Drive 4 5 G D RDS(on) = 0.0135? Top View Description This N-channel HEXFET Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. SO-8 Absolute Maximum Ratings Parameter Max. Units VDS Drain- Source Voltage 30 V ID @ TA = 25C Continuous Drain Current, VGS @ 10V 10 ID @ TA = 70C Continuous Drain Current, VGS @ 10V 8.0 A IDM Pulsed Drain Current 50 PD @TA = 25C Power Dissipation 2.5 W PD @TA = 70C Power Dissipation 1.6 L

1.59. irf9410.pdf Size:114K _international_rectifier

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PD - 9.1562A IRF9410 PRELIMINARY HEXFET Power MOSFET Generation V Technology A A 1 8 S D Ultra Low On-Resistance VDSS = 30V 2 7 N-Channel MOSFET S D Surface Mount 3 6 S D Very Low Gate Charge and 4 5 G D Switching Losses RDS(on) = 0.030? Fully Avalanche Rated Top View Description Recommended upgrade: IRF7403 or IRF7413 Fifth Generation HEXFETs from International Rectifier Lower profile/smaller equivalent: IRF7603 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of SO-8 power applications. With these improvements

1.60. ne55410gr.pdf Size:647K _nec

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DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PAs. This product has two different FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability. FEATURES Two different FETs (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package Over 25 dB gain available by connecting two FETs in series : GL(Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : GL(Q2) = 11.0 dB TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz) High 1 dB compression output power : PO (1 dB) (Q1) = 35.4 dBm TYP. (VDS =28V, IDset (Q1) = 20 mA, f = 2 140

1.61. irfu410a.pdf Size:743K _samsung

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Advanced Power MOSFET IRFU410A BVDSS = 520 V Improved Inductive Ruggedness RDS(on) = 10.0? Rugged Polysilicon Gate Cell Structure Fast Switching Times ID = 1.2 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Improved High Temperature Reliability 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 520 ? Continuous Drain Current (TC=25 ) 1.2 ID A ? Continuous Drain Current (TC=100 ) 0.8 1 IDM Drain Current-Pulsed O 4.0 A VGS Gate-to-Source Voltage _ V 2 EAS Single Pulsed Avalanche Energy O 40 mJ 1 IAR Avalanche Current 1.2 A O EAR Repetitive Avalanche Energy 1 O 4.2 mJ 3 dv/dt Peak Diode Recovery dv/dt O 3.5 V/ns ? Total Power Dissipation (TC=25 ) 42 W PD ? Linear Derating Factor W/ 0.33 Operating Junction and TJ , TSTG -55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8 from case for 5-se

1.62. bts410e2.pdf Size:168K _siemens

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PROFET BTS 410 E2 Smart Highside Power Switch Features Product Summary Overload protection Overvoltage protection Vbb(AZ) 65 V Current limitation V 4.7 ... 42 V Operating voltage bb(on) Short circuit protection On-state resistance R 220 Thermal shutdown ON m? Overvoltage protection (including load dump) Load current (ISO) I 1.8 A L(ISO) Fast demagnetization of inductive loads Current limitation I 5 A L(SCr) Reverse battery protection1) Undervoltage and overvoltage shutdown with auto-restart and hysteresis TO-220AB/5 Open drain diagnostic output Open load detection in ON-state CMOS compatible input 5 5 Loss of ground and loss of V protection bb 5 Electrostatic discharge (ESD) protection 1 1 Standard Straight leads SMD Application C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads All types of resistive, inductive and capacitve loads Replaces electromechanical relays, fuses and discr

1.63. bts410f2.pdf Size:167K _siemens

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PROFET BTS 410 F2 Smart Highside Power Switch Features Product Summary Overload protection Overvoltage protection Vbb(AZ) 65 V Current limitation V 4.7 ... 42 V Operating voltage bb(on) Short circuit protection On-state resistance R 220 Thermal shutdown ON m? Overvoltage protection (including load dump) Load current (ISO) I 1.8 A L(ISO) Fast demagnetization of inductive loads Current limitation I 2.7 A L(SCr) Reverse battery protection1) Undervoltage and overvoltage shutdown with auto-restart and hysteresis TO-220AB/5 Open drain diagnostic output Open load detection in ON-state CMOS compatible input 5 5 Loss of ground and loss of V protection bb 5 Electrostatic discharge (ESD) protection 1 1 Standard Straight leads SMD Application C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads Most suitable for inductive loads Replaces electromechanical relays, fuses and discrete circuits Gene

1.64. bup410d.pdf Size:81K _siemens

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BUP 410D IGBT With Antiparallel Diode Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 410D 600V 13A TO-220 AB Q67040-A4425-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 600 V Collector-gate voltage VCGR RGE = 20 k? 600 Gate-emitter voltage VGE 20 DC collector current IC A TC = 25 C 13 TC = 90 C 8 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 26 TC = 90 C 16 Diode forward current IF TC = 90 C 11 Pulsed diode current, tp = 1 ms IFpuls TC = 25 C 72 Power dissipation Ptot W TC = 25 C 50 Chip or operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Semiconductor Group 1 Dec-12-1996 BUP 410D Maximum Ratings Parameter Symbol Values Unit DIN humidity category, DIN 40 040 - E - IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56 Therm

1.65. bts410d2.pdf Size:170K _siemens

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PROFET BTS 410 D2 Smart Highside Power Switch Features Product Summary Overload protection Overvoltage protection Vbb(AZ) 65 V Current limitation V 4.7 ... 42 V Operating voltage bb(on) Short circuit protection On-state resistance R 220 Thermal shutdown ON m? Overvoltage protection (including load dump) Load current (ISO) I 1.8 A L(ISO) Fast demagnetization of inductive loads Current limitation I 5 A L(SCr) Reverse battery protection1) Undervoltage and overvoltage shutdown with auto-restart and hysteresis TO-220AB/5 CMOS diagnostic output Open load detection in ON-state CMOS compatible input 5 5 Loss of ground and loss of V protection bb 5 Electrostatic discharge (ESD) protection 1 1 Standard Straight leads SMD Application C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads All types of resistive, inductive and capacitve loads Replaces electromechanical relays, fuses and discrete ci

1.66. bts410g2.pdf Size:161K _siemens

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PROFET BTS 410 G2 Smart Highside Power Switch Features Product Summary Overload protection Overvoltage protection Vbb(AZ) 65 V Current limitation V 4.7 ... 42 V Operating voltage bb(on) Short circuit protection On-state resistance R 220 Thermal shutdown ON m? Overvoltage protection (including load dump) Load current (ISO) I 1.8 A L(ISO) Fast demagnetization of inductive loads Current limitation I 2.7 A L(SCr) Reverse battery protection1) Undervoltage and overvoltage shutdown with auto-restart and hysteresis TO-220AB/5 Open drain diagnostic output Open load detection in ON-state CMOS compatible input 5 5 Loss of ground and loss of V protection bb 5 Electrostatic discharge (ESD) protection 1 1 Standard Straight leads SMD Application C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads Most suitable for inductive loads Replaces electromechanical relays, fuses and discrete circuits Gene

1.67. bts410h2.pdf Size:167K _siemens

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PROFET BTS 410 H2 Smart Highside Power Switch Features Product Summary Overload protection Overvoltage protection Vbb(AZ) 65 V Current limitation V 4.7 ... 42 V Operating voltage bb(on) Short circuit protection On-state resistance R 220 Thermal shutdown ON m? Overvoltage protection (including load dump) Load current (ISO) I 1.8 A L(ISO) Fast demagnetization of inductive loads Current limitation I 1.5 A L(SCr) Reverse battery protection1) Undervoltage and overvoltage shutdown with auto-restart and hysteresis TO-220AB/5 Open drain diagnostic output Open load detection in OFF-state CMOS compatible input 5 5 Loss of ground and loss of V protection bb 5 Electrostatic discharge (ESD) protection 1 1 Standard Straight leads SMD Application C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads Most suitable for inductive loads Replaces electromechanical relays, fuses and discrete circuits Gen

1.68. 2sc4102.pdf Size:126K _rohm

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High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K ?Features ?Dimensions (Unit : mm) 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K 1.25 ?Absolute maximum ratings (Ta=25?C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V 0.1Min. Emitter-base voltage VEBO 5 V Each lead has same dimensions Collector current IC 50 mA ROHM : UMT3 (1) Emitter Collector power dissipation PC 0.2 W EIAJ : SC-70 (2) Base Junction temperature Tj 150 C JEDEC : SOT-323 (3) Collector Storage temperature Tstg -55 to +150 C 2SC3906K ?Packaging specifications and hFE 1.6 Type 2SC4102 2SC3906K 2.8 Package UMT3 SMT3 hFE RS RS Marking T? T? 0.3Min. Code T106 T146 Each lead has same dimensions Basic ordering unit (pieces) 3000 3000 ROHM : SMT3 (1) Emitter ?Denotes hFE EIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector ?Electrical characteristics (Ta=25?C) Parame

1.69. 2sc4102_2sc3906k_2sc2389s.pdf Size:67K _rohm

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2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V 0.1Min. Each lead has same dimensions Collector current IC 50 mA 2SC4102 / 2SC3906K 0.2 Collector power PC W ROHM : UMT3 (1) Emitter dissipation 2SC2389S 0.3 EIAJ : SC-70 (2) Base Junction temperature Tj 150 C JEDEC : SOT-323 (3) Collector Storage temperature Tstg -55 to +150 C 2SC3906K Packaging specifications and hFE Type 2SC4102 2SC3906K 2SC2389S Package UMT3 SMT3 SPT hFE RS RS RS 1.6 Marking T? T? - 2.8 Code T106 T146 TP Basic ordering unit (pieces) 3000 3000 5000 ?Denotes hFE 0.3Min. Each lead ha

1.70. si5410du.pdf Size:148K _vishay

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New Product Si5410DU Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 12 New Thermally Enhanced PowerPAK RoHS 40 10 nC 0.021 at VGS = 4.5 V 12 COMPLIANT ChipFET Package - Small Footprint Area PowerPAK ChipFET Single - Low On-Resistance - Thin 0.8 mm Profile 1 2 100 % UIS Tested Marking Code D D 3 AJ XXX APPLICATIONS D D Lot Traceability 4 and Date Code Load Switch, PA Switch, and Battery D D 8 G Switch for Portable Applications D Part # Code 7 DC-DC Synchronous Rectification S 6 G S 5 Bottom View S N-Channel MOSFET Ordering Information: Si5410DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Unit VDS 40 Drain-Source Voltage V VGS 20 Gate-Source Voltage TC = 25 C 12a TC = 70 C 12a Continuous Dr

1.71. si4108dy.pdf Size:267K _vishay

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New Product Si4108DY Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0098 at VGS = 10 V 75 36 nC 20.5 100 % Rg Tested COMPLIANT 100 % UIS Tested APPLICATIONS Primary Side Switch Half Bridge SO-8 Intermediate Bus Converter D S 1 8 D S D 2 7 S 3 6 D G G D 4 5 Top View S N-Channel MOSFET Ordering Information: Si4108DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Unit VDS Drain-Source Voltage 75 V VGS Gate-Source Voltage 20 TC = 25 C 20.5 TC = 70 C 16.4 Continuous Drain Current (TJ = 150 C) ID TA = 25 C 13.8b, c TA = 70 C 11.1b, c A IDM Pulsed Drain Current 60 TC = 25 C 6.5 Continuous Source-Drain Diode Current IS TA = 25 C 3b, c IAS Single Pulse Avalanche Current 32 L = 0.1 mH EAS mJ Single Pulse Avalanche En

1.72. sir410d.pdf Size:471K _vishay

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1.73. si4100dy.pdf Size:238K _vishay

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Si4100DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)d Qg (Typ.) Available 0.063 at VGS = 10 V 6.8 TrenchFET Power MOSFET 100 9 nC 100 % UIS Tested 0.084 at VGS = 6 V 5.8 APPLICATIONS High Frequency Boost Converter LED Backlight for LCD TV SO-8 S D 1 8 D S D 2 7 D S 3 6 G D 4 5 G Top View S Ordering Information: Si4100DY-T1-E3 (Lead (Pb)-free) Si4100DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 TC = 25 C 6.8 TC = 70 C 5.4 Continuous Drain Current (TJ = 150 C) ID TA = 25 C 4.4a, b TA = 70 C 3.5a, b A Pulsed Drain Current IDM 20 TC = 25 C 5 IS Continuous Source-Drain Diode Current TA = 25 C 2.1a, b Single Avalanche Current IAS 19 L = 0.1 mH EAS S

1.74. sib410dk.pdf Size:187K _vishay

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1.75. si6410dq.pdf Size:189K _vishay

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Si6410DQ Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) (?)ID (A) TrenchFET Power MOSFETs 0.014 at VGS = 10 V 7.8 30 RoHS 0.021 at VGS = 4.5 V 6.3 COMPLIANT D TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. G D D 1 8 S S 2 7 Si6410DQ S S 3 6 G D 4 5 Top View S* Ordering Information: Si6410DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Unit VDS Drain-Source Voltage 30 V VGS 20 Gate-Source Voltage TA = 25 C 7.8 ID Continuous Drain Current (TJ = 150 C)a TA = 70 C 6.2 A IDM Pulsed Drain Current 30 IS 1.5 Continuous Source Current (Diode Conduction)a TA = 25 C 1.5 PD W Maximum Power Dissipationa TA = 70 C 1.0 TJ, Tstg Operating Junction and Storage Temperature Range - 55 to 150 C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit RthJA 83

1.76. si9410bdy.pdf Size:242K _vishay

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1.77. si4410bdy.pdf Size:227K _vishay

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Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Definition 0.0135 at VGS = 10 V 10 TrenchFET Power MOSFET 30 0.020 at VGS = 4.5 V 8 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Battery Switch Load Switch SO-8 D S D 1 8 S D 2 7 S D 3 6 G G D 4 5 Top View S Ordering Information: Si4410BDY-T1-E3 (Lead (Pb)-free) Si4410BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Unit VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 10 7.5 ID Continuous Drain Current (TJ = 150 C)a TA = 70 C 86 A IDM Pulsed Drain Current (10 s Pulse Width) 50 IS 2.3 1.26 Continuous Source Current (Diode Conduction)a TA = 25 C 2.5 1.4 PD W Maximum Power Dissipationa TA = 70 C 1.6 0.9 TJ,

1.78. si4102dy.pdf Size:239K _vishay

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Si4102DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)d Qg (Typ.) Available 0.158 at VGS = 10 V 3.8 TrenchFET Power MOSFET 100 4.6 nC 100 % UIS Tested 0.175 at VGS = 6 V 3.6 APPLICATIONS High Frequency Boost Converter LED Backlight for LCD TV SO-8 S D 1 8 D S D 2 7 D S 3 6 G D 4 5 G Top View S Ordering Information: Si4102DY-T1-E3 (Lead (Pb)-free) Si4102DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 TC = 25 C 3.8 TC = 70 C 3 Continuous Drain Current (TJ = 150 C) ID TA = 25 C 2.7a, b TA = 70 C A 2.1a, b Pulsed Drain Current IDM 8 TC = 25 C 4 IS Continuous Source-Drain Diode Current TA = 25 C 2a, b Single Avalanche Current IAS 6 A L = 0.1 mH EAS Singl

1.79. sis410n.pdf Size:537K _vishay

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1.80. si4104dy.pdf Size:252K _vishay

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New Product Si4104DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) Definition 0.105 at VGS = 10 V TrenchET Power MOSFET 100 4.6 8.5 nC 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 High Frequency DC/DC Converter High Frequency Boost Converter SD 1 8 D LED Backlight for LCD TV SD 2 7 SD 3 6 GD 4 5 G Top View S Ordering Information: Si4104DY-T1-E3 (Lead (Pb)-free) Si4104DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 TC = 25 C 4.6 TC = 70 C 3.7 Continuous Drain Current (TJ = 150 C) ID TA = 25 C 3.2b, c TA = 70 C 2.6b, c A Pulsed Drain Current IDM 15 TC = 25 C 4.1 Continuous Source-Drain Diode Curr

1.81. si9410dy.pdf Size:42K _vishay

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1.82. si4410dy.pdf Size:353K _vishay

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SI4410DY N-channel TrenchMOS logic level FET Rev. 03 4 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching characteristics 1.3 Applications DC motor control Notebook computers DC-to-DC convertors Portable equipment Lithium-ion battery applications 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ? 25 C; Tj ? 150 C - - 30 V ID drain current Tamb = 25 C; pulsed; - - 10 A see Figure 1 and 3 Ptot total power Tamb = 25 C; pulsed; - - 2.5 W dissipation see Figure 2 Dynamic character

1.83. tn2410l_vn2406d-l_vn2410l-ls.pdf Size:64K _vishay

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1.84. vp2410l.pdf Size:48K _vishay

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1.85. si3410dv.pdf Size:189K _vishay

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Si3410DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)a Qg (Typ.) Definition 0.0195 at VGS = 10 V 8 TrenchFET Power MOSFET 30 9.2 nC Compliant to RoHS Directive 2002/95/EC 0.023 at VGS = 4.5 V 8 APPLICATIONS Notebook Load Switch Low Current dc-to-dc TSOP-6 Top View D D 1 6 D (1, 2, 5, 6) 3 mm D 5 D 2 Marking Code AM XXX G S 3 4 Lot Traceability and Date Code G (3) Part # Code 2.85 mm (4) S Ordering Information: Si3410DV-T1-E3 (Lead (Pb)-free) Si3410DV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Unit VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 8a TC = 70 C 8a Continuous Drain Current (TJ = 150 C) ID TA = 25 C 7.5b,c TA = 70 C 5.9b,c A IDM 30 Pulsed Drain Current 2.7 TC = 25 C IS Contin

1.86. ctlm3410_ctlm7410_ctlm3474-m832d.pdf Size:403K _central

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CTLM3410-M832D CTLM7410-M832D CTLM3474-M832D www.centralsemi.com SURFACE MOUNT DESCRIPTION: DUAL, LOW VCE (SAT) The CENTRAL SEMICONDUCTOR CTLM3410- SILICON TRANSISTORS M832D (Dual NPN), CTLM7410-M832D (Dual PNP), and CTLM3474-M832D (Complementary NPN & PNP) are Low VCE(SAT) Transistors packaged in the small, thermally efficient, 3x2mm Tiny Leadless Module (TLM) surface mount case. These devices are designed for applications where small size, operational efficiency, and low energy consumption are the prime requirements. Due to its leadless package design this device is capable of dissipating up to 4 times the power TLM832D CASE of similar devices in comparable sized surface mount packages. MARKING CODES: CTLM3410-M832D: CFG CTLM7410-M832D: CFH CTLM3474-M832D: CFJ FEATURES APPLICATIONS Dual Chip Device Switching Circuits High Current (1.0A) Transistors DC / DC Converters Low VCE(SAT) Transistors (450mV @ IC=1.0A MAX) LCD Backlighting

1.87. zvp4105a.pdf Size:55K _diodes

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P-CHANNEL ENHANCEMENT ZVP4105A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 T V I VD ? D I D E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT D i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V V V I T I V 8 V ID VD V V I I V V VD V V I D i ID VD V V V VD V V V T VD V V V i D i D ? V V ID i T VD V ID I i i VD V V V i T i T D I Ti i Ti VDD ? V ID T D I Ti 8 II Ti I i i i D I ? I i i i i ? i i i I

1.88. zvn4106f.pdf Size:46K _diodes

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SOT23 N-CHANNEL ENHANCEMENT ZVN4106F MODE VERTICAL DMOS FET ISSUE 2 DECEMBER 1995 PARMARKING DETAIL - MZ S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25C ID 0.2 A 10 Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20 V Max Power Dissipation at Tamb=25C Ptot 330 mW ent Operating and Storage Temperature Range Tj:Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown BVDSS 60 V ID=1mA, VGS=0V Voltage Gate-Source Threshold VGS(th) 1.3 3 V ID=1mA, VDS= VGS Voltage Gate-Body Leakage IGSS 100 nA VGS= 20V, VDS=0V Zero Gate Voltage Drain IDSS 10 A VDS=60V, VGS=0 2.0 Current 50 VDS=48V, VGS=0V, T=125C(2) A On-State Drain Current(1) ID(on) 1A VDS=25V, VGS=10V rrent Static Drain-Source On-State RDS(on) 2.5 ? VGS=10V, ID=500mA Resistance (1) 5 ? VGS=5V, ID=200mA 50V Forward T

1.89. oms410.pdf Size:38K _omnirel

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OMS410 OMS410A OMS510 3 PHASE, LOW VOLTAGE, LOW RDS(on), MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE Three Phase, 100 Volt, 15 To 45 Amp Bridge With Current And Temperature Sensing In A Low Profile Package FEATURES Three Phase Power Switch Configuration Zener Gate Protection 10 Miliohm Shunt Resistor Linear Thermal Sensor Isolated Low Profile Package Output Currents Up To 45 Amps DESCRIPTION This series of MOSFET switches is configured in a 3 phase bridge with a common VDD line, precision series shunt resistor in the source line, and a sensing element to monitor the substrate temperature. This device is ideally suited for Motor Control 2.1 applications where size, performance, and efficiency are key. (@ 25C) MAXIMUM RATINGS Part VDS RDS(on) ID Package Number (Volts) (m ) (Amps) OMS410 100 85 15 MP-3 OMS410A 100 85 20 MP-3 OMS510 100 42 45 MP-3 SCHEMATIC 2 1 6 5 10 9 32, 33, 34 29, 30, 31 21 26, 27, 28 23, 24, 25 22 15,16,17 18,19, 20 3

1.90. ntjd4105c.pdf Size:149K _onsemi

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NTJD4105C Small Signal MOSFET 20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88 Features Complementary N and P Channel Device Leading -8.0 V Trench for Low RDS(on) Performance http://onsemi.com ESD Protected Gate - ESD Rating: Class 1 SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) TYP ID Max Pb-Free Packages are Available 0.29 W @ 4.5 V N-Ch 20 V 0.63 A 0.36 W @ 2.5 V Applications DC-DC Conversion 0.22 W @ -4.5 V Load/Power Switching P-Ch -8.0 V 0.32 W @ -2.5 V -0.775 A Single or Dual Cell Li-Ion Battery Supplied Devices 0.51 W @ -1.8 V Cell Phones, MP3s, Digital Cameras, PDAs MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit SOT-363 Drain-to-Source Voltage N-Ch VDSS 20 V SC-88 (6-LEADS) P-Ch -8.0 Gate-to-Source Voltage N-Ch VGS 12 V S1 1 6 D1 P-Ch 8.0 Continuous Drain Current N-Ch TA = 25C ID 0.63 A - Steady State TA = 85C 0.46 G1 2 5 G2 (Based on RqJA) P-Ch TA = 25C -0.775

1.91. nthd4102p-d.pdf Size:64K _onsemi

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NTHD4102P Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFETt Features Offers an Ultra Low RDS(ON) Solution in the ChipFET Package http://onsemi.com Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 V(BR)DSS RDS(ON) TYP ID MAX Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics 64 mW @ -4.5 V Simplifies Circuit Design since Additional Boost Circuits for Gate -20 V 85 mW @ -2.5 V -4.1 A Voltages are not Required 120 mW @ -1.8 V Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology S1 S2 Pb-Free Package is Available Applications Optimized for Battery and Load Management Applications in G1 G2 Portable Equipment such as MP3 Players, Cell Phones, and PDAs Charge Control in Battery Chargers Buck and Boost Converters D1 D2 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) P-Channel MOSFET P-Channel MOSFET Parameter Sy

1.92. nths4101p-d.pdf Size:59K _onsemi

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NTHS4101P Power MOSFET -20 V, 6.7 A, P-Channel ChipFETt Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 http://onsemi.com making it an Ideal Device for Applications where Board Space is at a Premium V(BR)DSS RDS(on) TYP ID MAX Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin 21 mW @ -4.5 V Environments such as Portable Electronics -20 V 30 mW @ -2.5 V -6.7 A Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the Operating Voltage used in many Logic ICs in Portable Electronics 42 mW @ -1.8 V Simplifies Circuit Design since Additional Boost Circuits for Gate S Voltages are not Required Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology G Pb-Free Package is Available Applications Optimized for Battery and Load Management Applications in D Portable Equipment such as MP3

1.93. ntms4107n-d.pdf Size:72K _onsemi

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NTMS4107N Power MOSFET 30 V, 18 A, Single N-Channel, SO-8 Features Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG Optimized for Low Side Synchronous Applications http://onsemi.com High Speed Switching Capability Pb-Free Package is Available V(BR)DSS RDS(on) TYP ID MAX 3.4 mW @ 10 V Applications 30 V 18 A Notebook Computer Vcore Applications 4.7 mW @ 4.5 V Network Applications DC-DC Converters D MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit Drain-to-Source Voltage VDSS 30 V G Gate-to-Source Voltage VGS $20 V Continuous Drain TA = 25C ID 15 A Steady S Current (Note 1) State TA = 85C 11 t v10 s TA = 25C 18 MARKING DIAGRAM/ Power Dissipation Steady PD 1.67 W PIN ASSIGNMENT (Note 1) State TA = 25C 8 18 t v10 s 2.5 Source Drain 1 Continuous Drain TA = 25C ID 11 A Source Drain Current (Note 2) Source Drain Steady TA = 85C 8.0 SO-8 Gate Drain State CASE 751 Power Dissipation PD 0.93

1.94. mmjt9410-d.pdf Size:73K _onsemi

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MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features Collector -Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com High DC Current Gain - hFE = 85 (Min) @ IC = 0.8 Adc POWER BJT = 60 (Min) @ IC = 3.0 Adc IC = 3.0 AMPERES Low Collector -Emitter Saturation Voltage - BVCEO = 30 VOLTS VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc VCE(sat) = 0.2 VOLTS = 0.45 Vdc (Max) @ IC = 3.0 Adc SOT-223 Surface Mount Packaging Epoxy Meets UL 94 V-0 @ 0.125 in 4 C 2,4 ESD Ratings: Human Body Model, 3B; > 8000 V C Machine Model, C; > 400 V Pb-Free Package is Available B C E MAXIMUM RATINGS 1 2 3 B 1 E 3 Rating Symbol Value Unit Top View Schematic Pinout Collector -Emitter Voltage VCEO 30 Vdc Collector -Base Voltage VCB 45 Vdc Emitter -Base Voltage VEB 6.0 Vdc MARKING Base Current - Continuous IB 1.0 Adc DIAGRAM 1 Collector Current - Continuous IC 3.0 Adc - Peak 5.0 Total Power Dissipation @ TC = 25

1.95. vn2410l.pdf Size:106K _onsemi

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VN2410L Small Signal MOSFET 240 V, 200 mA, N-Channel TO-92 Features Pb-Free Packages are Available* http://onsemi.com MAXIMUM RATINGS 200 mA, 240 V Rating Symbol Value Unit RDS(on) = 10 ? Drain -Source Voltage VDSS 240 Vdc N-Channel Drain -Gate Voltage VDGR 240 Vdc D Gate-Source Voltage - Continuous VGS 20 Vdc - Non-repetitive (tp ? 50 s) VGSM 40 Vpk Continuous Drain Current ID 200 mAdc G Pulsed Drain Current IDM 500 mAdc Power Dissipation @ TC = 25C PD 350 mW S Derate above 25C 2.8 mW/C Operating and Storage Temperature TJ, Tstg -55 to C 150 THERMAL CHARACTERISTICS TO-92 Characteristic Symbol Max Unit CASE 29 STYLE 22 Thermal Resistance, Junction to Ambient R?JA 312.5 C/W 1 1 2 2 3 3 Maximum Lead Temperature for Soldering TL 300 C STRAIGHT LEAD BENT LEAD Purposes, 1/16 inch from case for 10 BULK PACK TAPE & REEL seconds AMMO PACK Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Fu

1.96. ntr4101p.pdf Size:108K _onsemi

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NTR4101P Trench Power MOSFET -20 V, Single P-Channel, SOT-23 Features Leading -20 V Trench for Low RDS(on) -1.8 V Rated for Low Voltage Gate Drive http://onsemi.com http://onsemi.com SOT-23 Surface Mount for Small Footprint Pb-Free Package is Available V(BR)DSS RDS(ON) TYP ID MAX Applications 70 mW @ -4.5 V -20 V Load/Power Management for Portables 90 mW @ -2.5 V -3.2 A 112 mW @ -1.8 V Load/Power Management for Computing Charging Circuits and Battery Protection P-Channel MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted) S Parameter Symbol Value Unit Drain-to-Source Voltage VDSS -20 V G Gate-to-Source Voltage VGS 8.0 V Continuous Drain Steady TA = 25C ID -2.4 A Current (Note 1) State TA = 85C -1.7 t ? 10 s TA = 25C -3.2 D Power Dissipation Steady TA = 25C PD 0.73 W (Note 1) State MARKING DIAGRAM & t ? 10 s 1.25 PIN ASSIGNMENT Continuous Drain Steady TA = 25C ID -1.8 A 3 Current (Note 2) State TA = 85C -1.3 3 Drain Powe

1.97. nts4101p.pdf Size:100K _onsemi

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NTS4101P Power MOSFET -20 V, -1.37 A, Single P-Channel, SC-70 Features Leading -20 V Trench for Low RDS(on) http://onsemi.com -2.5 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2x2 mm) 83 mW @ -4.5 V Pb-Free Package is Available -20 V 88 mW @ -3.6 V -1.37 A Applications High Side Load Switch 104 mW @ -2.5 V Charging Circuit Single Cell Battery Applications such as: Cell Phones, P-Channel MOSFET S Digital Cameras, PDAs MAXIMUM RATINGS (TJ = 25C unless otherwise stated) G Parameter Symbol Value Units Drain-to-Source Voltage VDSS -20 V Gate-to-Source Voltage VGS 8 V Continuous Drain Steady TA = 25C ID -1.37 A D Current (Note 1) State TA = 70C -0.62 MARKING DIAGRAM & Power Dissipation Steady TA = 25C PD 0.329 W (Note 1) State PIN ASSIGNMENT 3 D Pulsed Drain Current tp = 10 ms IDM -4.0 A 3 Operating Junction and Storage Temperature TJ, -55 to C 1 TSTG 150 TT M G 2 G Source

1.98. ntmfs4108n.pdf Size:90K _onsemi

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NTMFS4108N Power MOSFET 30 V, 35 A, Single N-Channel, SO-8 Flat Lead Package http://onsemi.com Features Thermally and Electrically Enhanced Packaging Compatible with http://onsemi.com Standard SO-8 Package Footprint New Package Provides Capability of Inspection and Probe After V(BR)DSS RDS(on) TYP ID MAX Board Mounting 1.8 mW @ 10 V Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG 30 V 35 A Optimized for Low Side Synchronous Applications 2.7 mW @ 4.5 V High Speed Switching Capability Applications D Notebook Computer Vcore Applications Network Applications DC-DC Converters G MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit S Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS $20 V MARKING Continuous Drain TA = 25C ID 22 A DIAGRAM Steady Current (Note 1) State TA = 85C 16 D S D t v10 s TA = 25C 35 4108N 1 S Power Dissipation Steady PD 2.4 W AYWWG SO-8 FLAT LEAD S (Note 1) Sta

1.99. ntb6410an_ntp6410an.pdf Size:144K _onsemi

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NTB6410AN, NTP6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features Low RDS(on) High Current Capability http://onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25C Unless otherwise specified) 100 V 13 mW @ 10 V 76 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel Gate-to-Source Voltage - Continuous VGS $20 V D Continuous Drain Steady TC = 25C ID 76 A Current RqJC State TC = 100C 54 Power Dissipation Steady TC = 25C PD 188 W G RqJC State Pulsed Drain Current tp = 10 ms IDM 305 A S Operating Junction and Storage Temperature TJ, Tstg -55 to C Range +175 4 Source Current (Body Diode) IS 76 A 4 Single Pulse Drain-to-Source Avalanche EAS 500 mJ 1 Energy (VDD = 50 Vdc, VGS = 10 Vdc, 2 IL(pk) = 57.7 A, L = 0.3 mH, RG = 25 W) 3 Lead Temperature for Soldering TL 260 C TO-220AB D2PAK Purposes, 1/8? from Case for 10 Seconds CASE 221A CASE 418B 1 S

1.100. 2sc4410_e.pdf Size:41K _panasonic

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Transistor 2SC4410 Silicon NPN epitaxial planer type For UHF amplification Unit: mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Allowing the small current and low voltage operation. High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 10 V 0.2 0.1 Collector to emitter voltage VCEO 7 V Emitter to base voltage VEBO 2 V 1:Base 2:Emitter EIAJ:SC70 Collector current IC 10 mA 3:Collector SMini Type Package Collector power dissipation PC 50 mW Junction temperature Tj 150 ?C Marking symbol : 2X Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 1 A Emitter cutoff current IEBO VEB = 1.5V, IC = 0 1 A Forward current transfer ratio hFE VC

1.101. 2sc4410.pdf Size:37K _panasonic

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Transistor 2SC4410 Silicon NPN epitaxial planer type For UHF amplification Unit: mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Allowing the small current and low voltage operation. High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 10 V 0.2 0.1 Collector to emitter voltage VCEO 7 V Emitter to base voltage VEBO 2 V 1:Base 2:Emitter EIAJ:SC70 Collector current IC 10 mA 3:Collector SMini Type Package Collector power dissipation PC 50 mW Junction temperature Tj 150 ?C Marking symbol : 2X Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 1 A Emitter cutoff current IEBO VEB = 1.5V, IC = 0 1 A Forward current transfer ratio hFE VC

1.102. utd410.pdf Size:258K _utc

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UNISONIC TECHNOLOGIES CO., LTD UTD410 Power MOSFET N-CHANNEL ENHANCEMENT MODE 1 DESCRIPTION SOT-223 The UTD410 can provide excellent RDS(ON) and low gate charge by using advanced trench technology. This UTD410 is suitable for using as a load switch or in PWM applications. FEATURES 1 * VDS=30V, ID=8A TO-252 * RDS(ON) =48m? @VGS =10V SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 UTD410L-TN3-R UTD410G-TN3-R TO-252 G D S Tape Reel UTD410L-TN3-T UTD410G-TN3-T TO-252 G D S Tube UTD410L-AA3-R UTD410G-AA3-R SOT-223 G D S Tape Reel www.unisonic.com.tw 1 of 3 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-142.B UTD410 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 Continuous Drain Current ID 8 A Pulsed Drain Current (Note1) IDM 20 Repetitive

1.103. ut4410.pdf Size:218K _utc

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UNISONIC TECHNOLOGIES CO., LTD UT4410 Power MOSFET N-CHANNEL 30-V (D-S) MOSFET DESCRIPTION As advanced N-channel logic level enhancement MOSFET, the UT4410 is produced using UTC’s high cell density, DMOS trench technology. which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. These devices can be particularly suited for such low voltage applications: cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. Lead-free: UT4410L Halogen-free: UT4410G FEATURES * RDS(ON) < 18m? @VGS = 4.5V * RDS(ON) < 12m? @VGS = 10 V * Ultra low gate charge ( typical 11 nC ) * Low reverse transfer capacitance ( CRSS = typical 35 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SY

1.104. ut7410.pdf Size:280K _utc

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UNISONIC TECHNOLOGIES CO., LTD UT7410 Preliminary Power MOSFET 30V, 24A N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT7410 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. The UTC UT7410 is suitable for Load Switch and DC-DC converters applications, etc. FEATURES * RDS(ON)<24m? @ VGS=10V, ID=8A RDS(ON)<32m? @ VGS=4.5V, ID=7A * Low Gate Charge (typical 9.8nC) ORDERING INFORMATION Ordering Number Package Packing Lead Free Halogen Free UT7410L-K08-3030-R UT7410G-K08-3030-R DFN-8(3?3) Tape Reel UT7410L-K08-3030-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) K08-3030: DFN-8(3?3) (3)Lead Free (3) L: Lead Free, G: Halogen Free www.unisonic.com.tw 1 of 7 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-902.b UT7410 Preliminary Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD 2 of 7 www.unisonic.com.t

1.105. itc14410.pdf Size:98K _gec_plessey

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JULY 1996 IT14410012D PRELIMINARY DATA DS4372-2.6 ITC14410012D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS (25?C) VCES 1200V n - Channel. IC(CONT) 100A Enhancement Mode. VCE(sat) 2.8V High Input Impedance. High Switching Speed. Latch-Free Operation. Low Forward Voltage Drop. Short Circuit Capability (10s). RATINGS Symbol Parameter Test Conditions Max. Units VCES Collector-emitter voltage VGE = 0V 1200 V VGE Gate-emitter voltage - 20 V IC(CONT) Continuous collector current - 100 A IC(PK) Peak collector current tp = 1ms 200 A STATIC ELECTRICAL CHARACTERISTICS Measured under pulse conditions Tcase = 25?C Symbol Parameter Test Conditions Min. Typ. Max. Units ICES Collector cut-off current VGE = 0V, VCE = VCES - - 250 A IGES Gate leakage current VGE = 20V - - 500 nA VGE(TH) Gate threshold voltage IC = 5mA, VCE = VGE 4.0 - 7.5 V Tj = 25?C - 2.8 3.6 V IC = 100A, VGE = 15V Tj = 125?C - 3.0 3.6 V VCE(sat) Collector-emitter saturation

1.106. gf9410.pdf Size:152K _general_semi

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GF9410 N-Channel Enhancement-Mode MOSFET V 30V R 30 ? I 7A DS DS(ON) m D SO-8 0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.05 (1.27) 0.228 (5.79) 0.04 (1.02) Dimensions in inches 1 4 and (millimeters) 0.245 (6.22) 0.165 (4.19) Min. 0.155 (3.94) 0.019 (0.48) x 45 0.020 (0.51) 0.010 (0.25) 0.009 (0.23) 0.013 (0.33) 0.050 (1.27) 0.007 (0.18) 0.035 (0.889) 0.050 typ. 0.069 (1.75) 0.025 (0.635) (1.27) 0.053 (1.35) Mounting Pad Layout 0.050(1.27) 0 8 0.009 (0.23) 0.016 (0.41) 0.004 (0.10) Mechanical Data Features Case: SO-8 molded plastic body Advanced Trench Process Technology Terminals: Leads solderable per MIL-STD-750, High Density Cell Design for Ultra Low Method 2026 On-Resistance High temperature soldering guaranteed: Specially Designed for Low Voltage DC/DC 250C/10 seconds at terminals Converters Mounting Position: Any Weight: 0.5g Fast Switching for High Efficiency Maximum Ratings and Thermal Characte

1.107. 2sk410.pdf Size:50K _hitachi

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2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features High breakdown voltage You can decrease handling current. Included gate protection diode No secondarybreakdown Wide area of safe operation Simple bias circuitry No thermal runaway Outline 2SK410 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 180 V Gate to source voltage VGSS 20 V Drain current ID 8 A Channel dissipation Pch*1 120 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Note: 1. Value at TC = 25C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Power output PO 140 180 W VDD = 80 V, f = 28 MHz, Drain efficiency ? 80 % IDQ = 0.1 A, Pin = 5 W Drain to source breakdown V(BR)DSS 180 V ID = 10 mA, VGS = 0 voltage Gate to source breakdown V(BR)GSS 20 V IG = 100 A, VDS = 0 voltage Gate to source cutoff voltage VGS(off) 0.5 3.0 V ID = 1 mA, VD

1.108. 2n4104.pdf Size:10K _semelab

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2N4104 Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 1 2 TO18 (TO206AA) PINOUTS 1 Emitter 2 Base 3 Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 60 V IC(CONT) 0.05 A hFE @ 5.0/1m (VCE / IC) 1400 - ft 540M Hz PD 0.03 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no

1.109. sgm0410.pdf Size:620K _secos

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SGM0410 3.5A , 100V , RDS(ON) 170 m? N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The SGM0410 provide the designer with the best A combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-89 package 4 Top View C B is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications 1 2 K L 3 such as DC/DC converters. E D FEATURES F G H J ? Lower Gate Charge ? Simple Drive Requirement Millimeter Millimeter ? Fast Switching Characteristic REF. REF. Min. Max. Min. Max. A 4.40 4.60 G - - B 4.05 4.25 H 0.89 1.20 C 2.40 2.60 J 0.35 0.41 MARKING D 1.40 1.60 K 0.70 0.80 E 3.00 REF. L 1.50 REF. 0410 F 0.40 0.52 ???? ? = Date code D ??? PACKAGE INFORMATION ?? Package MPQ Leader Size G SOT-89 1K 7 inch ?? S AB

1.110. ssg4410n.pdf Size:441K _secos

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SSG4410N 13 A, 30 V, RDS(ON) 13.5 m? N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to B provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power L D management in portable and battery-powered M products such as computers, printers, PCMCIA A C cards, cellular and cordless telephones. N K J FEATURES H G F E ? Low RDS(on) provides higher efficiency and extends battery life. Millimeter Millimeter REF. REF. ? Low thermal impedance copper leadframe SOP-8 saves board space. Min. Max. Min. Max. A 5.80 6.20 H 0.35 0.49 ? Fast switching speed. B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° ? High performance trench technology. D 0° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. PACKAGE INFORMATION Package MPQ LeaderSize S D S D

1.111. ssg0410.pdf Size:618K _secos

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SSG0410 N-Ch Enhancement Mode Power MOSFET 3.8 A, 100 V, RDS(ON) 158 m? Elektronische Bauelemente DESCRIPTION The SSG0410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SOP-8 FEATURES ? Simple Drive Requirement ? Low Gate Charge B ? Fast Switching Characteristic L D M Drain MARKING ???? A C N K J ?? H G F E Gate D D D D ???? 8 7 6 5 Source 0410SC ????? ? = Date Code Millimeter Millimeter ?? REF. REF. Min. Max. Min. Max. A 5.80 6.20 H 0.35 0.49 1 2 3 4 B 4.80 5.00 J 0.375 REF. S S S G C 3.80 4.00 K 45° D 0° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT

1.112. ssm0410.pdf Size:429K _secos

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SSM0410 3.5 A, 100V, RDS(ON) 220m? N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSM0410 provide the designer with best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES SOT-223 ? Fast Switching ? Low On-resistance A ? Logic Level Compatible M 4 Top View C B 1 2 3 K L MARKING E D F G H J Drain Millimeter Millimeter REF. REF. Min. Max. Min. Max. Gate A 6.20 6.70 G - 0.10 B 6.70 7.30 H - - C 3.30 3.70 J 0.25 0.35 D 1.42 1.90 K - - Source E 4.50 4.70 L 2.30 REF. F 0.60 0.82 M 2.90 3.10 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain – Source Voltage VDS

1.113. sgm0410s.pdf Size:482K _secos

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SGM0410S 2.2A , 100V , RDS(ON) 310 m? ? ? ? N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The SGM0410S provide the designer with the best A combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-89 package 4 Top View C B is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications 1 2 K L 3 such as DC/DC converters. E D FEATURES F G H J Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.40 4.60 G - - B 4.05 4.25 H 0.89 1.20 MARKING C 2.40 2.60 J 0.35 0.41 D 1.40 1.60 K 0.70 0.80 E 3.00 REF. L 1.50 REF. 0410S F 0.40 0.52 = Date code D 24 PACKAGE INFORMATION Package MPQ Leader Size 1 SOT-89 1K 7 inch G

1.114. bd410.pdf Size:167K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR BD410 TO-126 Plastic Package E C B ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 500 V Collector -Emitter Voltage VCEO 325 V Emitter Base Voltage VEBO 5.0 V Continuous Collector Current IC 1.0 A Peak Collector Current ICM 1.5 Total Power Dissipation @ Ta=25 ?C Ptot 1.25 W @ Tc=25 ?C 20 Storage Temperature Range Tj, Tstg - 55 to +125 ?C Lead Temperature 1.6mm from Case for TL 260 ?C 10 Seconds. ELECTRICAL CHARACTERISTICS (Ta=25?C unless otherwise specified ) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Cut off Current ICES VCE=300V, IB=0 100 µA Collector -Base Voltage VCBO IC=500µA, IE=0 500 V Collector Emitter Voltage VCEO * IC=10mA, IB=0 325 V Emitter Base Voltage VEBO IE=50µA, IC=0 5 V DC Current Gain hFE IC=5mA, VCE=10V 25 IC=50mA, VCE=10V 30 240 IC=100mA, VCE=10V 20 Ba

1.115. krc410v_414v.pdf Size:49K _kec

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SEMICONDUCTOR KRC410V~KRC414V EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ·With Built-in Bias Resistors. ·Simplify Circuit Design. DIM MILLIMETERS 2 _ ·Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05 _ B 0.8 +0.05 ·High Packing Density. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 EQUIVALENT CIRCUIT _ G 0.8 0.05 + H 0.40 P P _ J 0.12 + 0.05 C _ K 0.2 + 0.05 P 5 R1 B 1. COMMON (EMITTER) 2. IN (BASE) 3. OUT (COLLECTOR) E VSM MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 50 V PC Collector Power Dissipation 100 mW VCEO Collector-Emitter Voltage 50 V Tj Junction Temperature 150 ? VEBO Emitter-Base Voltage 5 V Tstg -55?150 ? Storage Temperature Range IC Collector Current 100 mA ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITI

1.116. krc410e-414e.pdf Size:380K _kec

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SEMICONDUCTOR KRC410E~KRC414E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 1.60 0.10 D ·Simplify Circuit Design. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 ·Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.27+0.10/-0.05 _ ·High Packing Density. E 1.60 0.10 + _ + 1.00 0.10 G H 0.50 _ + J 0.13 0.05 EQUIVALENT CIRCUIT J C R1 B 1. COMMON (EMITTER) 2. IN (BASE) 3. OUT (COLLECTOR) E ESM MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 50 V PC Collector Power Dissipation 100 mW VCEO Collector-Emitter Voltage 50 V Tj Junction Temperature 150 ? VEBO Emitter-Base Voltage 5 V Tstg -55?150 ? Storage Temperature Range IC Collector Current 100 mA ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN

1.117. krc410-411-414.pdf Size:366K _kec

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SEMICONDUCTOR KRC410, 411, 414 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 2.00 0.20 D 2 _ ·Simplify Circuit Design. B 1.25 0.15 + _ + C 0.90 0.10 3 ·Reduce a Quantity of Parts and Manufacturing Process. 1 D 0.3+0.10/-0.05 _ + E 2.10 0.20 ·High Packing Density. G 0.65 P H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 EQUIVALENT CIRCUIT L 0.70 H _ + M 0.42 0.10 N 0.10 MIN N N K C P 0.1 MAX R1 B 1. COMMON (EMITTER) 2. IN (BASE) 3. OUT (COLLECTOR) E USM MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 50 V PC Collector Power Dissipation 100 mW VCEO Collector-Emitter Voltage 50 V Tj Junction Temperature 150 ? VEBO Emitter-Base Voltage 5VStorage Temperature Range Tstg -55?150 ? IC Collector Current 100 mA ELECTRICAL CHAR

1.118. 2sc4106.pdf Size:288K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4106 DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IBB Base Current-Continuous 3 A Collector Power Dissipation@TC=25? 50 PC W Collector Power Dissipation@Ta=25? 1.75 TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4106 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)C

1.119. 2sd1410.pdf Size:177K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS ·Igniter applications ·High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IBB Base Current-Continuous 1 A Collector Power Dissipation 2.0 @ Ta=25? PC W Collector Power Dissipation 30 @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 ELECTRICAL CHARACTERISTICS TC=25? unles

1.120. 2sc4108.pdf Size:211K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4108 DESCRIPTION ·With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide ASO(Safe Operating Area) APPLICATIONS ·400V/12A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 12 A ICP Collector current-pulse 25 A IB Base current 4 A Ta=? 2.5 PC Collector power dissipation W TC=25? 100 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4108 CHARACTERISTICS Tj=25? unless otherwise specifi

1.121. mj410.pdf Size:99K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ410 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 1A APPLICATIONS ·Designed for medium to high voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25? 100 W TJ Junction Temperature 150 ? Storage Temperature Range -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 0.75 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ410 ELECTRI

1.122. 2sc4107.pdf Size:142K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4107 DESCRIPTION · ·With TO-220C package ·High breakdown voltage and high reliability ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/10A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 20 A IB Base current 3.5 A Ta=25? 1.75 PC Collector dissipation W TC=25? 60 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4107 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UN

1.123. 2sc4109.pdf Size:158K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4109 DESCRIPTION ·With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/16A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 16 A ICP Collector current-pulse 32 A IB Base current 6 A Ta=? 2.5 PC Collector power dissipation W TC=25? 140 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4109 CHARACTERISTICS Tj=25? unless otherwise specified

1.124. 2sc4105.pdf Size:111K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4105 DESCRIPTION · ·With TO-220C package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 4 A ICM Collector current-Peak 8 A IB Base current 1.5 A PC Collector dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4105 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown

1.125. buf410a.pdf Size:105K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410A DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IBB Base Current-Continuous 3 A IBM Base Current-peak 4.5 A Collector Power Dissipation PC @TC=25? 125 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410A ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SY

1.126. buf410.pdf Size:265K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410 DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IBB Base Current-Continuous 3 A IBM Base Current-peak 4.5 A Collector Power Dissipation PC @TC=25? 125 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise s

1.127. 2sc4102.pdf Size:463K _htsemi

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2SC4102 TRANSISTOR (NPN) FEATURES SOT–323 ? High Breakdown Voltage ? Complements the 2SA1579 MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 120 V CBO 1. BASE V Collector-Emitter Voltage 120 V 2. EMITTER CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collector Power Dissipation 200 mW C R Thermal Resistance From Junction To Ambient 625 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50µA, IE=0 120 V Collector-emitter breakdown voltage V I =1mA, I =0 120 V (BR)CEO C B Emitter-base breakdown voltage V I =50µA, I =0 5 V (BR)EBO E C Collector cut-off current ICBO VCB=100V, IE=0 500 nA Emitter cut-off current I V =4V, I =0 500 nA EBO EB C DC current gain hFE VCE=

1.128. pt4410.pdf Size:1554K _htsemi

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PT4410 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 10.5m? RDS(ON), Vgs@4.5V, Ids@12A = 15m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Package Dimensions D D D D 8 7 6 5 1 2 3 4 S S S G Millimeter Millimeter REF. Min. Max. Min. Max. REF. A 5.80 6.20 M 0.10 0.25 B 4.80 5.00 H 0.35 0.49 C 3.80 4.00 L 1.35 1.75 D 0° 8° J 0.375 REF. E 0.40 0.90 K 45° F 0.19 0.25 G 1.27 TYP. Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V ± 20 GS Continuous Drain Current ID 12 A Pulsed Drain Current I 48 DM TA = 25oC 2.5 Maximum Power Dissipation PD W TA = 75oC 1.2 o Operating Junction and Storage Temperature Range T , T -55 to 150 C J stg Avalanche Energy with

1.129. cem0410.pdf Size:737K _cet

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CEM0410 Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 3.4A, RDS(ON) = 120m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D D D Surface mount Package. 8 7 6 5 SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 3.4 A Drain Current-Pulsed a IDM 13.6 A Maximum Power Dissipation PD 2.5 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b R?JA 50 C/W This is preliminary information on a new product in development now . Rev 1. 2010.Jan. Details are subject to change without notice . http://www.cetsemi.com 1 CEM0410 Electrical Characteristics Tc = 25 C unless otherwise noted Pa

1.130. wt4410m.pdf Size:676K _wietron

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WT4410M Surface Mount N-Channel Enhancement Mode MOSFET DRAIN CURRENT P b Lead(Pb)-Free 10 AMPERS DRAIN SOUCE VOLTAGE Features: 30 VOLTAGE *Super high dense cell design for low R DS(ON) RDS(ON) <11 m @VGS =10V ? RDS(ON) <15 m ?@VGS =4.5V *Rugged and Reliable *SO-8 Package 1 SO-8 Maximum Ratings ( TA=25 C Unless Other wise Specified) Rating Symbol Value Unite 30 Drain-Source Voltage V DS V + 20 Gate-Source Voltage V GS V - Continuous Drain Current ( T =125 C) (1) I D 10 A J 30 Pulsed Drain Current (2) I DM A A I S Drain-Source Diode For ward Current (1) 2.3 (1) 2.5 Power Dissipation P D W Maximax Junction-to-Ambient R ?JA 50 C/W Operating Junction and Storage T J , Tstg -55 to 150 C Temperature Range Device Marking W T4410M=SDM4410 WEITRON 1/6 01-Jul-05 http://www .weitron.com.tw D D D D 1 3 S S S G 8 6 5 7 2 4 WT4410M Electrical Characteristics (TA=25 C Unless otherwise noted) Cha

1.131. wtk9410.pdf Size:877K _wietron

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WTK9410 Surface Mount N-Channel DRAIN CURRENT Enhancement Mode MOSFET 18 AMPERES DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free 30 VOLTAGE Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON) 1 RDS(ON)<5.5m?@VGS=10V RDS(ON)<6.2m?@VGS=4.5V SOP-8 RDS(ON)<8.0m?@VGS=2.5V * Rugged and Reliable. * SOP-8 Package. Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Symbol Value Unite VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±12 V Continuous Drain Current(1) (TA =25°C) 18 ID A 15 (TA =70°C) IDM 80 A Pulsed Drain Current(2) Power Dissipation(TA =25°C) PD 2.5 W R?JA 50 °C/W Maximax Junction-to-Ambient(1) TJ Junction Temperature Range +150 °C Tstg Storage Temperature Range -55 to +150 °C Device Marking WTK9410 = 9410SC WEITRON 1/6 12-Mar-07 http://www.weitron.com.tw D D D D 1 3 S S S G 8 6 5 7 2 4 WTK9410 Electrical Characteristics (T A =2

1.132. ap9410gm-hf.pdf Size:96K _a-power

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AP9410GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 30V D D Ў Low On-resistance RDS(ON) 6m? D D Ў Fast Switching ID 18A G S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +12 V ID@TA=25? Continuous Drain Current3 18 A ID@TA=70? Continuous Drain Current3 15 A IDM Pulsed Drain Current1 80 A PD@TA=25? Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter

1.133. ap9410gmt-hf.pdf Size:58K _a-power

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AP9410GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Capable of 2.5V Gate Drive D BVDSS 30V Ў Simple Drive Requirement RDS(ON) 5.5m? Ў SO-8 Compatible ID 80A G Ў Low On-resistance S Ў RoHS Compliant & Halogen-Free D D D D Description Advanced Power MOSFETs from APEC provide the ? designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S S The PMPAK® 5x6 package is special for DC-DC converters application S G and the foot print is compatible with SO-8 with backside heat sink. PMPAK® 5x6 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +12 V Continuous Drain Current (Chip), VGS @ 4.5V ID@TC=25? 80 A Continuous Drain Current3, VGS @ 4.5V ID@TA=25? 23.6 A ID@TA=70? Continuous Drain Current3 19 A IDM Pulsed Drain Current1 300 A PD@TC=25? Total Power Dissipation 56.8 W

1.134. ap9410agh-hf.pdf Size:95K _a-power

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AP9410AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-resistance D BVDSS 30V Ў Simple Drive Requirement RDS(ON) 6m? Ў Fast Switching Characteristic ID 67A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching, ruggedized device design, low on- S TO-252(H) resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +12 V Continuous Drain Current, VGS @ 4.5V ID@TC=25? 67 A Continuous Drain Current, VGS @ 4.5V ID@TC=100? 42 A IDM Pulsed Drain Current1 240 A PD@TC=25? Total Power Dissipation 44.6 W PD@TA=25? Total Power Dissipation3 2 W TSTG Storage Temperatur

1.135. ap4410agm.pdf Size:57K _a-power

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AP4410AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 30V D D Ў Low On-resistance RDS(ON) 13.5m? D D Ў Fast Switching Characteristic ID 10A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TA=25? Continuous Drain Current3 10 A ID@TA=70? Continuous Drain Current3 8 A IDM Pulsed Drain Current1 50 A PD@TA=25? Total Power Dissipation 2.5 W o TSTG Storage Temperature Range -55 to 150 C o TJ Operating Junction Temperature Range -55 to 150 C Thermal Dat

1.136. ap9410gh-hf.pdf Size:94K _a-power

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AP9410GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-resistance D BVDSS 30V Ў Simple Drive Requirement RDS(ON) 6m? Ў Fast Switching Characteristic ID 75A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching, ruggedized device design, low on- S ? TO-252(H) resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as C/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +12 V Continuous Drain Current, VGS @ 4.5V4 ID@TC=25? 75 A Continuous Drain Current, VGS @ 4.5V ID@TC=100? 61 A IDM Pulsed Drain Current1 300 A PD@TC=25? Total Power Dissipation 89.2 W PD@TA=25? Total Power Dissipation3 2 W TSTG Storage Temperat

1.137. ap4410gm.pdf Size:202K _a-power

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AP4410GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D D Ў Fast Switching D RDS(ON) 13.5m? D Ў Simple Drive Requirement ID 10A G S S SO-8 S Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G G S The SO-8 package is widely preferred for all commercial-industrial S surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +25 V ID@TA=25? Continuous Drain Current3 10 A ID@TA=70? Continuous Drain Current3 8 A IDM Pulsed Drain Current1 50 A PD@TA=25? Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55

1.138. ap9410gm.pdf Size:70K _a-power

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AP9410GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ЎSimple Drive Requirement BVDSS 30V Ў Ў Ў D D ЎLow On-resistance RDS(ON) 6m? Ў Ў Ў D D ЎFast Switching ID 18A Ў Ў Ў G S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± 12 V ID@TA=25? Continuous Drain Current3 18 A ID@TA=70? Continuous Drain Current3 15 A IDM Pulsed Drain Current1 80 A PD@TA=25? Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/? TSTG Storage Temperature Range -55 to 150 ? T

1.139. ap9410agm-hf.pdf Size:57K _a-power

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AP9410AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 30V D D Ў Low On-resistance RDS(ON) 5.5m? D D Ў Fast Switching Characteristic ID 18A G Ў RoHS Compliant & Halogen-Free S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +12 V ID@TA=25? Continuous Drain Current3 18 A ID@TA=70? Continuous Drain Current3 15 A IDM Pulsed Drain Current1 80 A PD@TA=25? Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature

1.140. mtn4410q8.pdf Size:305K _cystek

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Spec. No. : C397Q8 Issued Date : 2007.06.14 CYStech Electronics Corp. Revised Date : 2014.01.23 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTN4410Q8 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and halogen-free package Symbol Outline MTN4410Q8 SOP-8 G:Gate D:Drain S:Source Ordering Information Device Package Shipping SOP-8 MTN4410Q8-0-T3-G 2500 pcs / Tape & Reel (Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTN4410Q8 CYStek Product Specification Spec. No. : C397Q8 Issued Date : 2007.06.14 CYStech Electronics Corp. Revised Date : 2014.01.23 Page No. : 2/8 Absolut

1.141. mtn3410j3.pdf Size:330K _cystek

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Spec. No. : C433J3 Issued Date : 2008.12.24 CYStech Electronics Corp. Revised Date : 2010.07.22 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 100V ID 50A MTN3410J3 RDS(ON) 30mΩ Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol Outline MTN3410J3 TO-252 G:Gate G D S D:Drain S:Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±30 Continuous Drain Current @VGS=10V, TC=25°C ID 50 Continuous Drain Current @VGS=10V, TC=100°C ID 35 A Pulsed Drain Current (Note 1) IDM 150 Avalanche Current IAS 30 Avalanche Energy @ L=0.1mH, ID=30A, RG=25Ω EAS 45 mJ Repetitive Avalanche Energy@ L=0.05mH (Note 2) EAR 22.5 Pd W Total Power Dissipation (TC=25℃) 60 0.37 Linear Derating Factor W/°C Operating J

1.142. mtn3410f3.pdf Size:289K _cystek

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Spec. No. : C795F3 Issued Date : 2011.03.01 CYStech Electronics Corp. Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS : 100V RDS(ON) : 20mΩ (max.) MTN3410F3 ID : 59A Description The MTN3410F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-263 package is universally preferred for all commercial-industrial applications Features • BVDSS=100V • Low On Resistance • Simple Drive Requirement • Fast Switching Characteristic • RoHS compliant package Symbol Outline MTN3410F3 TO-263 G D S G:Gate D:Drain S:Source MTN3410F3 CYStek Product Specification Spec. No. : C795F3 Issued Date : 2011.03.01 CYStech Electronics Corp. Revised Date : Page No. : 2/8 Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source Voltage VDS 100 V Gate

1.143. mtn4410v8.pdf Size:312K _cystek

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Spec. No. : C397V8 Issued Date : 2012.03.14 CYStech Electronics Corp. Revised Date : 2012.03.15 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN4410V8 Features • Single Drive Requirement • Low On-resistance • Pb-free lead plating package Applications • Synchronous rectifier for DC/DC converters • Telecom secondary side rectification • High end server/ work station Symbol Outline DFN3×3 MTN4410V8 Pin 1 G:Gate D:Drain S:Source Ordering Information Device Package Shipping Marking DFN3×3 MTN4410V8 3000 pcs / Tape & Reel 4410 (Pb-free lead plating package) MTN4410V8 CYStek Product Specification Spec. No. : C397V8 Issued Date : 2012.03.14 CYStech Electronics Corp. Revised Date : 2012.03.15 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current @VGS=10V, TA=25°C ID 12 A Continuous D

1.144. mtn0410l3.pdf Size:446K _cystek

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Spec. No. : C792L3 Issued Date : 2010.07.16 CYStech Electronics Corp. Revised Date : Page No. : 1/7 N -Channel Logic Level Enhancement Mode MOSFET BVDSS 100V MTN0410L3 ID 3A 280mΩ RDSON(MAX) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package Equivalent Circuit Outline MTN0410L3 SOT-223 D S D G:Gate D:Drain G S:Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 100 V ±20 Gate-Source Voltage VGS Continuous Drain Current @ TC=25°C ID 3 Continuous Drain Current @ TC=100°C ID 2 A Pulsed Drain Current *1, 2 IDM 12 Total Power Dissipation @TC=25℃ Pd 2.7 W Linear Derating Factor W/°C 0.02 Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 °C Note : *1. Pulse width limited by maximum junction temperature *2. Pulse width≤ 300μs, Duty cycle ≤2% MTN0410L3 Preliminary CYStek Product S

See also transistors datasheet: 40974 , 40975 , 40976 , 40977 , 40979 , 40980 , 40TA045 , 40TA045D , 2N222 , 41008 , 41008A , 41009 , 41009A , 41010 , 41012 , 41013 , 41024 .

Keywords

 410 Datasheet  410 Datenblatt  410 RoHS  410 Distributor
 410 Application Notes  410 Component  410 Circuit  410 Schematic
 410 Equivalent  410 Cross Reference  410 Data Sheet  410 Fiche Technique

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