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2N2501 Transistor (IC) Datasheet. Cross Reference Search. 2N2501 Equivalent

Type Designator: 2N2501

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.36

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.5

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 350

Collector capacitance (Cc), pF: 4

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of 2N2501 transistor: TO18

2N2501 Transistor Equivalent Substitute - Cross-Reference Search

2N2501 PDF:

5.1. 2n2509.pdf Size:100K _no

2N2501
2N2501

5.2. ixgh2n250.pdf Size:175K _igbt

2N2501
2N2501

Advance Technical Information High Voltage IGBTs VCES = 2500V IXGH2N250 IXGT2N250 IC110 = 2A for Capacitor Discharge ≤ VCE(sat) ≤ ≤ 3.1V ≤ ≤ Applications TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G C (TAB) VCES TC = 25°C to 150°C 2500 V C E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ± 20 V VGEM Transient ± 30 V TO-268 (IXGT) IC2

5.3. ixbh42n250.pdf Size:206K _igbt

2N2501
2N2501

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH42N250 BIMOSFETTM Monolithic IC110 = 42A Bipolar MOS Transistor  VCE(sat)   3.0V   TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V G C Tab VCGR TJ = 25°C to 150°C, RGE = 1M 2500 V E VGES Continuous ± 25 V G = Gate C = Collector VGEM Transient ± 35

5.4. ixbh2n250.pdf Size:180K _igbt

2N2501
2N2501

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH2N250 BIMOSFETTM IXBT2N250 IC110 = 2A ≤ VCE(sat) ≤ ≤ 3.50V ≤ ≤ Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V G C (TAB) C VGES Continuous ± 20 V E VGEM Transient ± 30 V IC

5.5. ixbt2n250.pdf Size:180K _igbt

2N2501
2N2501

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH2N250 BIMOSFETTM IXBT2N250 IC110 = 2A ≤ VCE(sat) ≤ ≤ 3.50V ≤ ≤ Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V G C (TAB) C VGES Continuous ± 20 V E VGEM Transient ± 30 V IC

5.6. ixgt2n250.pdf Size:175K _igbt_a

2N2501
2N2501

Advance Technical Information High Voltage IGBTs VCES = 2500V IXGH2N250 IXGT2N250 IC110 = 2A for Capacitor Discharge ≤ VCE(sat) ≤ ≤ 3.1V ≤ ≤ Applications TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G C (TAB) VCES TC = 25°C to 150°C 2500 V C E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES Continuous ± 20 V VGEM Transient ± 30 V TO-268 (IXGT) IC2

See also transistors datasheet: 2N2491 , 2N2492 , 2N2493 , 2N2494 , 2N2495 , 2N2496 , 2N25 , 2N250 , AC125 , 2N2509 , 2N250A , 2N251 , 2N2510 , 2N2511 , 2N2512 , 2N2514 , 2N2515 .

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