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423 Transistor (IC) Datasheet. Cross Reference Search. 423 Equivalent

Type Designator: 423

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 125

Maximum collector-base voltage |Ucb|, V: 400

Maximum collector-emitter voltage |Uce|, V: 325

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 7

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 423 transistor: TO3

423 Transistor Equivalent Substitute - Cross-Reference Search

423 PDF:

1.1. bf421_bf423.pdf Size:119K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BF421/D High Voltage Transistors BF421 PNP Silicon BF423 COLLECTOR 2 3 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol BF421 BF423 Unit CASE 2904, STYLE 14 TO92 (TO226AA) CollectorEmitter Voltage VCEO 300 250 Vdc CollectorBase Voltage VCBO 300 250 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Curren

1.2. bf421l_bf423l.pdf Size:47K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF421L; BF423L PNP high-voltage transistors 1999 Apr 21 Product specification Supersedes data of 1997 Apr 18 Philips Semiconductors Product specification PNP high-voltage transistors BF421L; BF423L FEATURES PINNING Low current (max. 50 mA) PIN DESCRIPTION High voltage (max. 300 V) 1 base Available with a higher power r

1.3. bf421_bf423.pdf Size:48K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF421; BF423 PNP high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistors BF421; BF423 FEATURES PINNING Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 coll

1.4. pbss4230t.pdf Size:251K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4230T 30 V, 2 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 30 V, 2 A PBSS4230T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICM VCEO coll

1.5. bf421_bf423_1.pdf Size:62K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF421; BF423 PNP high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistors BF421; BF423 FEATURES PINNING Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 coll

1.6. bf421_bf423_2.pdf Size:51K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF421; BF423 PNP high voltage transistors Product specification 2004 Nov 10 Supersedes data of 1996 Dec 09 Philips Semiconductors Product specification PNP high voltage transistors BF421; BF423 FEATURES PINNING Low feedback capacitance. PIN DESCRIPTION 1 base APPLICATIONS 2 collector Class-B video output stages in colour

1.7. sd1423.pdf Size:54K _st

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SD1423 RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS .800 - 960 MHz .24 VOLTS .EFFICIENCY 50% .COMMON EMITTER .GOLD METALLIZATION .CLASS AB LINEAR OPERATION .P 15 W MIN. WITH 8.0 dB GAIN OUT = .230 6LFL (M118) epoxy sealed ORDE R CODE BRANDING SD1423 SD1423 DESCRIPTION PIN CONNECTION The SD1423 is a gold metallization epitaxial silicon NPN planar transistor us

1.8. rn47a7je_090423.pdf Size:222K _toshiba

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RN47A7JE TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A7JE Switching Applications Unit: mm Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts c

1.9. rn49a6fs_090423.pdf Size:157K _toshiba

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RN49A6FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Unit: mm Inverter Circuit Applications Interface Circuit Applications 1.00.05 0.80.05 0.10.05 0.10.05 Driver Circuit Applications 1 6 Two devices are incorporated into a fine pitch small mold (6-pin) 5 2 package. Incorporat

1.10. rn49j2fs_090423.pdf Size:168K _toshiba

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RN49J2FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN49J2FS Switching Applications Unit: mm Inverter Circuit Applications 1.00.05 Interface Circuit Applications 0.80.05 0.10.05 0.10.05 Driver Circuit Applications 1 6 5 2 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 4 3 Incor

1.11. 2sc3423.pdf Size:133K _toshiba

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2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SA1360 Small collector output capacitance: Cob = 1.8 pF (typ.) High transition frequency: fT = 200 MHz (typ.) Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage

1.12. ssm3k320t_090423.pdf Size:211K _toshiba

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SSM3K320T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS?) SSM3K320T High-Speed Switching Applications Unit: mm 4.5 V drive +0.2 Low ON-resistance : Ron = 77 m? (max) (@VGS = 4.5 V) 2.8-0.3 : Ron = 50 m? (max) (@VGS = 10 V) +0.2 1.6-0.1 Absolute Maximum Ratings (Ta = 25C) 1 Characteristic Symbol Rating Unit 23 Drain-Source voltage VDSS 30 V Gate-

1.13. 2sc6142_100423.pdf Size:206K _toshiba

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2SC6142 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6142 Unit: mm 0 High Voltage Switching Applications 0 Switching Regulator Applications 6.50.2 0 DC-DC Converter Applications 5.20.2 0.6 MAX. Excellent switching times: tf = 0.15 ?s (typ.) 1.10.2 0.9 High collector breakdown voltage: VCES = 800 V, VCEO = 375 V 0.6 MAX 2.3 2.3 Absolute Maximum Ratings (Ta =

1.14. sft1423.pdf Size:491K _sanyo

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SFT1423 Ordering number : ENA1509 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device SFT1423 Applications Features Low ON-resistance. 4V drive. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 2 A Drain C

1.15. 2sk1423.pdf Size:104K _sanyo

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Ordering number:EN3561 N-Channel Silicon MOSFET 2SK1423 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2056A Converters. [2SK1423] 15.6 3.2 4.8 14.0 2.0 1.6 2.0 0.6 1.0 1 2 3 1 : Gate 0.6 2 : Drain 3 : Source 5.45 5.45 SANYO : TO3PB Specifications Absolute Maximum Ratings at Ta = 25?

1.16. 2sa1423.pdf Size:90K _sanyo

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1.17. 2sc4423.pdf Size:102K _sanyo

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Ordering number:EN2854 NPN Triple Diffused Planar Silicon Transistor 2SC4423 400V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit:mm Fast switching speed (tf : 0.1 s typ). 2039D Wide ASO. [2SC4423] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating easy mounting. 3.1 2.8 2.0 2.0 1.0

1.18. huf76423p3.pdf Size:241K _fairchild_semi

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HUF76423P3, HUF76423S3S Data Sheet December 2001 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features DRAIN Ultra Low On-Resistance SOURCE (FLANGE) DRAIN - rDS(ON) = 0.030?, VGS = 10V GATE - rDS(ON) = 0.035?, VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER SOURCE Electrical Models

1.19. huf76423d3s.pdf Size:199K _fairchild_semi

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HUF76423D3, HUF76423D3S Data Sheet December 2001 20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETFairchild Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.032?, VGS = 10V DRAIN DRAIN - rDS(ON) = 0.037?, VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER GATE Ele

1.20. bf421_bf423.pdf Size:136K _siemens

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PNP Silicon Transistors BF 421 With High Reverse Voltage BF 423 High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 420, BF 422 (NPN) 2 3 1 Type Marking Ordering Code Pin Configuration Package1) 1 2 3 BF 421 Q62702-F532 E C B TO-92 BF 423 Q62702-F496 Maximum Ratings Parameter Symbol Values Unit BF 421 BF 423 Collector-emitte

1.21. si7423dn.pdf Size:528K _vishay

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1.22. si6423dq.pdf Size:197K _vishay

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Si6423DQ Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) (?)ID (A) TrenchFET Power MOSFET 0.0085 at VGS = - 4.5 V - 9.5 RoHS 0.0106 at VGS = - 2.5 V - 12 - 8.5 COMPLIANT APPLICATIONS 0.014 at VGS = - 1.8 V - 7.5 Load Switch S* G TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. D D 1 8 S S 2 7 S S

1.23. u421_u423.pdf Size:58K _vishay

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1.24. si4423dy.pdf Size:222K _vishay

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Si4423DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Definition 0.0075 at VGS = - 4.5 V - 14 TrenchFET Power MOSFET 0.009 at VGS = - 2.5 V - 13 - 20 Compliant to RoHS Directive 2002/95/EC 0.0115 at VGS = - 1.8 V - 12 APPLICATIONS Game Station SO-8 - Load Switch S S 1 8

1.25. si4230dy.pdf Size:253K _vishay

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Si4230DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) (?) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 100 % Rg and UIS Tested 0.0205 at VGS = 10 V 8 30 7.3 0.026 at VGS = 4.5 V 8 APPLICATIONS Low Current DC/DC Notebook PC - System Power D1 D2 SO-8 S1 1 D1 8 G1 2 D1 7 G1 G2 S2 3 D2 6 G2 4 D2

1.26. 2n4237_2n4238_2n4239.pdf Size:144K _central

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TM 2N4237 Central 2N4238 Semiconductor Corp. 2N4239 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4237, 2N4238, and 2N4239 are Silicon NPN Transistors, in a hermetically sealed metal case designed for power amplifier, power driver and switching power supply applications. JEDEC TO-39 CASE MAXIMUM RATINGS: (TC=25C unless otherwise noted) SYMBOL 2N4237 2N4238 2N4239

1.27. om6423sp6.pdf Size:18K _omnirel

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OM6423SP6 OM6425SP6 Preliminary Data Sheet OM6424SP6 OM6426SP6 POWER MOSFETS IN 11-PIN INDUSTRIAL SIP PACKAGE Industrial 11-Pin, 150 to 500 V, N-Channel Power MOSFET, Full H Bridge FEATURES Low RDS(on) Fast Switching Single SIP Package 3 Voltage, Current Ratings DESCRIPTION This series of H Bridge configured circuits provides the user with a low cost solution to power con

1.28. bf421_bf423.pdf Size:105K _onsemi

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BF421, BF423 High Voltage Transistors PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Rating Symbol BF421 BF423 Unit TO-92 Collector-Emitter Voltage VCEO -300 -250 Vdc CASE 29 STYLE 14 Collector-Base Voltage VCBO -300 -250 Vdc 1 1 2 2 Emitter-Base Voltage VEBO -5.0 Vdc 3 3 STRAIGHT LEAD BENT LEAD

1.29. 2sd1423_e.pdf Size:41K _panasonic

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Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SB1030 and 2SB1030A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit marking Collector to 2SD1423 30 VCBO V 1 2 3 base voltage 2SD1423A 60 Collector to 2

1.30. 2sc5423.pdf Size:30K _panasonic

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Power Transistors 2SC5423 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.1 Paramet

1.31. 2sc4238.pdf Size:63K _panasonic

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1.32. 2sd1423.pdf Size:37K _panasonic

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Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SB1030 and 2SB1030A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit marking Collector to 2SD1423 30 VCBO V 1 2 3 base voltage 2SD1423A 60 Collector to 2

1.33. ut4232.pdf Size:144K _utc

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UNISONIC TECHNOLOGIES CO., LTD UT4232 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UT4232 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and to be operated with low gate voltages. This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever. FEATURES * VDS(V)=30V * ID=7A (V

1.34. 2sd2423.pdf Size:34K _hitachi

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2SD2423 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Features The transistor with a built-in zener diode of surge absorb. Outline UPAK 2, 4 1 2 3 1 ID 4 1. Base 2. Collector 2 k? 0.5 ? 3. Emitter (Typ) (Typ) 4. Collector (Flange) 3 2SD2423 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Coll

1.35. 2sk2423.pdf Size:28K _hitachi

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2SK2423 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM 1 D 2 3 1. Gate G 2. Drain 3. Source S 2SK2423 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V

1.36. sfn423p.pdf Size:439K _secos

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SFN423P -6.6 A , -20 V , RDS(ON) 42 m? ? ? ? P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DFN2x2-8PP DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical appl

1.37. stt3423p.pdf Size:495K _secos

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STT3423P -5.7 A, -20 V, RDS(ON) 42 m? P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high cell density A trench process to provide low RDS(on) and to ensure minimal power E L loss and heat dissipation. Typical applications

1.38. tgf4230-scc.pdf Size:220K _triquint

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Product Data Sheet December 16, 2002 DC - 12 GHz Discrete HFET TGF4230-SCC Key Features and Performance Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz 1200 m HFET 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in) Bias at 8 Volts, 96 mA Primary Applications Cellular Base Stations High dynamic-range LNAs Military a

1.39. bc157vi-a_bc158vi-a-b_bc159a-b_bc177v-vi-a-b_bc178v-vi-a-b_bc179a-b_kc307a-b-v_kc308a-b-c_kc309f-b-c_kc636_kc638_kc640_kf423_kf470_kf517.pdf Size:144K _tesla

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1.40. 2n4234_2n4235_2n4236.pdf Size:196K _bocasemi

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Boca Semiconductor corp. bocasemi.com http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com

1.41. 2n4237_2n4238_2n4239.pdf Size:174K _bocasemi

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Boca Semicondcutor Corp. bocasemi.com http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com

1.42. 2n3583_2n3584_2n3585_2n4240_2n6420_2n6421_2n6422_2n6423.pdf Size:224K _bocasemi

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A Boca Semiconductor Corp. http://www.bocasemi.com A http://www.bocasemi.com A http://www.bocasemi.com A http://www.bocasemi.com

1.43. 2n6312_2n6313_2n6314_2n4231a_2n4232a_2n4233a.pdf Size:196K _bocasemi

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A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com

1.44. 2n4234_5_6.pdf Size:62K _cdil

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Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company PNP SILICON PLANAR TRANSISTORS 2N4234, 2N4235 2N4236 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N4234 2N4235 2N4236 UNIT VCEO Collector Emitter Voltage 40 60 80 V VCBO Collector Base Voltage 40 60 80 V VEBO Emitter Base Voltage 7.0 V IB Base Current

1.45. bf421_bf423.pdf Size:144K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE BF421 VIDEO TRANSISTORS BF423 TO-92 Plastic Package High Voltage Video Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 423 421 UNITS VCEO Collector Emitter Voltage 250 300 V VCBO Collector Base Voltage 250 300 V

1.46. 2sc3423.pdf Size:197K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA1360 ·High transition frequency APPLICATIONS ·Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

1.47. bf423.pdf Size:47K _kec

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SEMICONDUCTOR BF423 TECHNICAL DATA SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS. B C FEATURES High Voltage : VCEO>-300V Complementary to BF422. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H

1.48. ktb1423.pdf Size:443K _kec

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SEMICONDUCTOR KTB1423 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A C APPLICATIONS. DIM MILLIMETERS S _ A 10.0 0.3 + _ + B 15.0 0.3 FEATURES E C _ 2.70 0.3 + D High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. 0.76+0.09/-0.05 _ E ?3.2 0.2 + High Collector Breakdown Voltage : VCEO=-120V (Min.) _ F 3.0 0.3

1.49. ktc3423.pdf Size:801K _kec

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SEMICONDUCTOR KTC3423 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATION. A B D C E FEATURES F High Breakdown Voltage : VCEO=150V(Min.). Low Output Capacitance : Cob=5.0pF(Max.). G High Transition Frequency : fT=120MHz(Typ.). H Complementary to KTA1360. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.3 M

1.50. 2sc4231.pdf Size:126K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4231 DESCRIPTION ·With ITO-220 package ·Switching power transistor ·High voltage ,high speed PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Ope

1.51. mj423.pdf Size:96K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ423 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min.) ·DC Current Gain- : hFE= 30-90@ IC= 1A APPLICATIONS ·Designed for medium to high voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT

1.52. 2sc4233.pdf Size:59K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4233 DESCRIPTION · ·With TO-220C package ·High breakdown voltage ·Switching power transistor PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V

1.53. 2sc4235.pdf Size:327K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4235 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V

1.54. 2sc3423.pdf Size:163K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA1360 Ў¤ High transition frequency APPLICATIONS Ў¤ Audio frequency amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO V

1.55. 2sc4232.pdf Size:77K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4232 DESCRIPTION · ·With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

1.56. 2sc4230.pdf Size:268K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4230 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCE

1.57. 2sc4234.pdf Size:309K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4234 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCE

1.58. 2sc4236.pdf Size:288K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4236 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V

1.59. 2sc4423.pdf Size:156K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4423 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absol

1.60. 2sc4237.pdf Size:286K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4237 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V

1.61. p422_p423.pdf Size:530K _russia

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1.62. ced3423_ceu3423.pdf Size:394K _cet

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CED3423/CEU3423 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -18A, RDS(ON) = 45m? @VGS = -10V. RDS(ON) = 80m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RA

1.63. bf421-423.pdf Size:274K _lge

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BF421/BF423(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low feedback capacitance. PNP transistors in a TO-92 plastic package. NPN complements: BF420 and BF422 Class-B video output stages in colour television and professional monitor equipment. Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Sym

1.64. hbf423.pdf Size:44K _hsmc

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Spec. No. : HE6403 HI-SINCERITY Issued Date : 1993.03.18 Revised Date : 2003.06.18 MICROELECTRONICS CORP. Page No. : 1/4 HBF423 PNP EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ................................................................................................

1.65. ao3423.pdf Size:282K _aosemi

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AO3423 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO3423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -2A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V) < 92mΩ a load switch applications. RDS(ON) (at VGS= -4.5V) < 118mΩ RDS(ON) (at VGS= -2.5

1.66. ao4423.pdf Size:288K _aosemi

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AO4423 30V P-Channel MOSFET General Description Product Summary The AO4423 uses advanced trench technology to provide VDS (V) = -30V excellent RDS(ON), and ultra-low low gate charge with a ID = -17A (VGS = -20V) 25V gate rating. This device is suitable for use as a load RDS(ON) < 6.2mΩ (VGS = -20V) switch or in PWM applications. RDS(ON) < 7.2mΩ (VGS = -10V) ESD Protected * RoHS

1.67. aod423.pdf Size:374K _aosemi

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AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70A and low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V) < 6.2mΩ (< 6.7mΩ∗) resistance of the DPAK/IPAK package, this device is well RDS(ON) (at V

1.68. aoc2423.pdf Size:251K _aosemi

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AOC2423 20V P-Channel MOSFET General Description Product Summary VDS -20V The AOC2423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -2A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V) < 80mΩ VGS(MAX) rating. RDS(ON) (at VGS=-4.5V) < 95mΩ RDS(ON) (at VGS=-2.5V) < 120mΩ Typical ESD

1.69. aon7423.pdf Size:290K _aosemi

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AON7423 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7423 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V) < 5mΩ and battery protection applications. RDS(ON) (at VGS=-2.5V) < 6.5mΩ RDS(ON) (at VGS=-1.8V) < 8.

1.70. aoy423.pdf Size:374K _aosemi

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AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70A and low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V) < 6.2mΩ (< 6.7mΩ∗) resistance of the DPAK/IPAK package, this device is well RDS(ON) (at V

1.71. aoi423.pdf Size:374K _aosemi

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AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70A and low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V) < 6.2mΩ (< 6.7mΩ∗) resistance of the DPAK/IPAK package, this device is well RDS(ON) (at V

1.72. ap4230gm-hf.pdf Size:93K _a-power

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AP4230GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Lower Gate Charge BVDSS 30V Ў Simple Drive Requirement RDS(ON) 25m? Ў Fast Switching Characteristic ID 7A Ў Halogen Free & RoHS Compliant Product D2 D2 D1 Description D1 Advanced Power MOSFETs from APEC provide the G2 S2 designer with the best combination of fast swit

1.73. ap4232gm-hf.pdf Size:207K _a-power

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AP4232GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 Ў Simple Drive Requirement RDS(ON) 22m? D1 D1 Ў Dual N MOSFET Package ID 7.8A G2 Ў RoHS Compliant S2 G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, rug

1.74. ap4232bgm-hf.pdf Size:93K _a-power

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AP4232BGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Lower Gate Charge BVDSS 30V Ў Simple Drive Requirement RDS(ON) 22m? Ў Fast Switching Characteristic ID 7.6A Ў Halogen Free & RoHS Compliant Product D2 D2 D1 Description D1 Advanced Power MOSFETs from APEC provide the G2 S2 designer with the best combination of fast s

1.75. ap4423gm-hf.pdf Size:96K _a-power

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AP4423GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS -30V D D D Ў Low On-resistance RDS(ON) 15m? D Ў Fast Switching Characteristic ID -11A G S Ў RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast swit

1.76. ap4232agm.pdf Size:178K _a-power

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AP4232AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 Ў Simple Drive Requirement RDS(ON) 23m? D1 D1 Ў Dual N MOSFET Package ID 7.8A G2 S2 G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized device desi

1.77. bf423a3.pdf Size:219K _cystek

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Spec. No. : C235A3 Issued Date : 2004.02.24 CYStech Electronics Corp. Revised Date : 2014.04.01 Page No. : 1/5 PNP Epitaxial Planar Transistor BF423A3 Description • PNP high voltage transistors in a TO-92 plastic package. • Complementary to BF422A3 • Pb-free lead plating package Features • Low feedback capacitance. Applications • Class-B video output stages

1.78. mtp4423q8.pdf Size:426K _cystek

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Spec. No. : C423Q8 Issued Date : 2007.11.15 CYStech Electronics Corp. Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4423Q8 Description The MTP4423Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack

1.79. apm4230k.pdf Size:166K _anpec

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APM4230K N-Channel Enhancement Mode MOSFET Features Pin Description D • 25V/13.5A, D D D RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=7.5mΩ(typ.) @ VGS=4.5V S S • Super High Dense Cell Design • • • • S G • Avalanche Rated • • • • Top View of SOP - 8 • Reliable and Rugged • • • • • SOP-8 Package • • • • ( 5,6,7,8 ) • L

1.80. stb423s_stp423s.pdf Size:187K _samhop

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Green Product S T B / P 4 2 3 S S amHop Microelectronics C orp. Feb.26,2007 P-Channel Logic Level Enhancement Mode Field Effect Transistor PR ODUC T S UMMAR Y F E ATUR E S 4 R DS (ON) ( m Ω ) Max ı VDS S ID S uper high dense cell design for extremely low R DS (ON) . 9.5 @ VG S = -10V High power and current handling capability. - 40V - 65A TO-220 & TO-263 package. 12.5 @ VG S

1.81. dta401-dta411_dta417_dta422-dta423.pdf Size:708K _first_silicon

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DTA401~411 / DTA417 SEMICONDUCTOR TECHNICAL DATA DTA422~423 Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network 2 consisti

1.82. dwa401-dwa412_dwa417_dwa422_dwa423.pdf Size:696K _first_silicon

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SEMICONDUCTOR DWA401~412 TECHNICAL DATA DWA417,422,423 Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace

1.83. 2sd2423.pdf Size:952K _kexin

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SMD Type Transistors NPN Transistors 2SD2423 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=1.5A C ● Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 B ID 1.Base 2 kΩ 0.5 Ω 2.Collector (Typ) (Typ) E 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Volt

1.84. ao3423.pdf Size:1760K _kexin

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SMD Type AO3423 (KO3423) SOT-23 Unit: mm +0.2 2.9-0.2 +0.1 0.4 -0.05 3 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.2 -0.2 D ESD Rating: 2000V HBM G 1. Gate 2. Source 3. Drain S 0.4 +0.2 +0.2 2.8 -0.2 1.6 -0.1 0.55 +0.2 1.1 -0.1 +0.1 0-0.1 0.38 -0.1 SMD Type AO3423 (KO3423) Testconditions AS* SMD Type AO3423 (KO3423) 10 15 -10.0V -4.0V VDS=-5V -8

1.85. ao4423.pdf Size:1468K _kexin

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SMD Type MOSFET P-Channel MOSFET AO4423 (KO4423) SOP-8 ■ Features ● VDS (V) =-30V ● ID =-15 A (VGS =-20V) ● RDS(ON) < 7mΩ (VGS =-20V) 1.50 0.15 ● RDS(ON) < 8.5mΩ (VGS =-10V) ● RDS(ON) < 12 mΩ (VGS =- 6 V) 1 Source 5 Drain ● ESD Rating: 3000V HBM 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S ■ Absolute Maximum Ratings Ta = 25℃ Par

1.86. ao3423-3.pdf Size:1969K _kexin

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SMD Type MOSFET P-Channel Enhancement MOSFET AO3423 (KO3423) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-20V ● ID =-2.0 A (VGS =-10V) D 1 2 ● RDS(ON) < 92mΩ (VGS =-10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 ● RDS(ON) < 118mΩ (VGS =-4.5V) +0.1 1.9 -0.2 ● RDS(ON) < 166mΩ (VGS =-2.5V) G 1. Gate 2. Source 3. Drain S ■ Abso

1.87. ao3423.pdf Size:717K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3423 AO3423 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3423 uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -2 A (VGS = -10V) operation with gate voltages as low as 2.5V. This RDS(ON) < 92mΩ (VGS = -10V) device is suitable for use a

See also transistors datasheet: 41500 , 41501 , 41502 , 41503 , 41504 , 41505 , 41506 , 41508 , TIP41 , 431 , 43104 , 45190 , 45191 , 45192 , 45193 , 45194 , 45195 .

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