All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
8550
  8550
  8550
 
8550
  8550
  8550
 
8550
  8550
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
8550 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

8550 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 8550

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 15

Forward current transfer ratio (hFE), min: 85

Noise Figure, dB: -

Package of 8550 transistor: TO92

8550 Equivalent Transistors - Cross-Reference Search

8550 PDF doc:

1.1. ss8550.pdf Size:347K _fairchild_semi

8550
8550
SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8050 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25C) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100A, IE=0 -40 V BVCEO Collector-Emitter Breakdown Voltage IC= -2mA, IB=0 -25 V BVEBO Emitter-Base Breakdown Voltage IE= -100A, IC=0 -6 V ICBO Collector Cut-off Current VCB= -35V, IE=0 -100 nA IEBO Emitter Cut-off Current VEB= -6V, IC=0 -100

1.2. ss8550.pdf Size:64K _samsung

8550
8550
SS8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. Complimentary to SS8050 Collector Current IC= -1.5A Collector Dissipation:PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1.5 A Collector Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 -40 V Collector-Emitter Breakdown Voltage BVCEO IC= -2mA, IB=0 -25 V Emitter-Base Breakdown Voltage BVEBO IE= -100 , IC=0 V -6 Collector Cut-off Current ICBO VCB= -35V, IE=0 -100 nA Emitter Cut-off Current IEBO VEB= -6V, IC=0 -100 nA DC Current Gain hFE1 VCE= -1V, IC= -5mA 45 170 hF

1.3. he8550l.pdf Size:21K _utc

8550
8550
UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *Complimentary to UTC HE8050 TO-92L 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V Collector Dissipation(Ta=25 ) Pc 1 W Collector Current Ic -1.5 A Junction Temperature Tj 150 C Storage Temperature TSTG -65 ~ +150 C ELECTRICAL CHARACTERISTICS(Tj=25C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=-100A,IE=0 -40 V Collector-Emitter Breakdown Voltage BV

1.4. he8550.pdf Size:21K _utc

8550
8550
UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *Complimentary to UTC HE8050 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V Collector Dissipation(Ta=25 ) Pc 1 W Collector Current Ic -1.5 A Junction Temperature Tj 150 C Storage Temperature TSTG -65 ~ +150 C ELECTRICAL CHARACTERISTICS(Tj=25C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=-100A,IE=0 -40 V Collector-Emitter Breakdown Voltage BVC

1.5. s8550.pdf Size:19K _utc

8550
8550
UTC S8550 PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications. 1 FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V TO-92 *Complementary to UTC S8050 1:EMITTER 2:BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Collector Dissipation(Ta=25C) Pc 1 W Collector Current Ic -800 mA Junction Temperature Tj 150 C Storage Temperature TSTG -65 ~ +150 C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=-100A,IE=0 -30 V Collector-Emitter Breakdown Voltage BVCEO Ic=-1mA,IB=0 -20

1.6. utc8550s.pdf Size:22K _utc

8550
8550
UTC 8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S APPLICATIONS *Class B push-pull audio amplifier *General purpose applications TO-92 1:EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETERS SYMBOL RATING UNITS Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector dissipation(Ta=25C Pc 1 W Collector current Ic -800 mA Junction Temperature Tj 150 C Storage Temperature TSTG -65 ~ +150 C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-base breakdown voltage BVCBO Ic=-100A,IE=0 -30 V Collector-emitter breakdown voltage BVCEO Ic=-1mA,IB=0 -20 V Emitter-base breakdown voltage BVEBO IE=-100A,Ic=0 -5 V Collector cut-off current ICBO

1.7. sts8550.pdf Size:96K _auk

8550
8550
STS8550 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • High current application • Radio in class B push-pull operation Feature • Complementary pair with STS8050 Ordering Information Type NO. Marking Package Code STS8550 STS8550 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector KST-9013-000 1 4.5 ± 0.1 14.0 ± 0.40 0.38 1.20 ± 0.1 STS8550 Absolute maximum ratings (Ta=25° °C) ° ° Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -30 V Collector-Emitter voltage VCEO -25 V Emitter-Base voltage VEBO -6 V Collector current IC -800 mA Emitter current IE 800 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25° °C) ° ° Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base break

1.8. sta8550sf.pdf Size:279K _auk

8550
8550
STA8550SF PNP Silicon Transistor Descriptions PIN Connection • High current application • Radio in class B push-pull operation 3 Feature 1 • Complementary pair with STC8050SF 2 SOT-23F Ordering Information Type NO. Marking Package Code 8B ? ? STA8550SF SOT-23F ? ? ? ?Device Code ?hFE Rank ?Year&Week Code Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -6 V Collector current IC -800 mA Collector power dissipation PC* 350 mW Junction temperature TJ 150 °C Storage temperature range Tstg -55~150 °C * : Package mounted on 99.5% Alumina 10?8?0.6mm Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO IC=-1mA, IB=0 -25 - - V Collector cut-off current ICBO VCB=-30V, IE=0 - - -50 nA Emitter cut-off current IEBO VEB=-6V, IC=0 - - -50

1.9. sps8550.pdf Size:187K _auk

8550
8550
SPS8550 Semiconductor Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with SPS8050 Ordering Information Type NO. Marking Package Code SPS8550 SPS8550 TO-92 Outline Dimensions unit : mm 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector KST-9105-002 1 SPS8550 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage VEBO -6.5 V Collector current IC -1.5 A Collector dissipation PC 625 mW Junction temperature TJ 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -15 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V Emitter-Base breakdown vo

1.10. ss8550w.pdf Size:115K _secos

8550
8550
SS8550W PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM : 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM : -1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO : - 40 V S Top View B K 0.350 0.500 Operating & storage junction temperature 1 2 L 0.590 0.720 O O Tj, Tstg : - 55 C ~ + 150 C S 2.000 2.400 V G V 0.280 0.420 Marking : Y2 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V -40 V (BR)CBO Ic= 100?A, I =0 E Collector-emitter breakdown voltage V Ic=-0.1mA, I =0 -25 V (BR)CEO B Emitter-base breakdown voltage V -5 V (BR)EBO I =-100?A,I =0 E C Collector cut-off current I V =-40 V , I =0 -0.1 CBO CB E ?A

1.11. ss8550.pdf Size:329K _secos

8550
8550
SS8550 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector 3 FEATURES SOT-23 Power dissipation Collector 3 1 Dim Min Max PCM : 0.3 W Base A 2.800 3.040 1 Base B 1.200 1.400 2 Collector Current Emitter C 0.890 1.110 2 ICM : - 1.5 A D 0.370 0.500 Emitter G 1.780 2.040 Collector-base voltage A H 0.013 0.100 L V(BR)CBO : - 40 V J J 0.085 0.177 K 3 K 0.450 0.600 Top View S B Operating & storage junction temperature 1 2 L 0.890 1.020 C S 2.100 2.500 TJ, TSTG : - 55°C ~ + 150°C V G H D V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS at Ta = 25°C Symbol Min. Typ. Max. Unit Test Conditions BVCBO -40 - - V Ic = 100?A, IE = 0 BVCEO -25 - - V Ic = -0.1mA, IB = 0 BVEBO -5 - - V IE = -100?A, IC = 0 ICBO - - -0.1 ?A VCB = -40 V, IE = 0 ICEO - - -0.1 ?A VCE = -20V, IB = 0 IEBO - - -0.1 ?A VEB = -5V, IC = 0 VCE(sa

1.12. m8550.pdf Size:738K _secos

8550
8550
M8550 -40V, -0.8A, 200mW PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Power dissipation A L 3 3 MARKING Top View C B 1 1 2 Product Marking Code 2 K E M8550 Y21 D H J F G CLASSIFICATION OF hFE(2) Product-Rank M8550-L M8550-H Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18 Range 85-200 200-300 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 PACKAGE INFORMATION Package MPQ Leader Size Collector 3 SOT-23 3K 7’ inch 1 Base 2 Emitter MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Base Voltage V -40 V CBO Collector - Emitter Voltage V -25 V CEO Emitter - Base Voltage V -6 V EBO Collector Current - Continuous I -0.8 A C Collector Power Dissipation P 0.2 W C Junct

1.13. s8550.pdf Size:196K _secos

8550
8550
S8550 PNP Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Dim Min Max Collector 3 A 2.800 3.040 Complimentary to S8050 B 1.200 1.400 1 Base C 0.890 1.110 2 Emitter Collector Current: IC=0.5A D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J 0.085 0.177 3 K 0.450 0.600 S Top View B 12 L 0.890 1.020 S 2.100 2.500 MARKING: 2TY V G V 0.450 0.600 All Dimension in mm C H J D K O MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdow

1.14. m8550t.pdf Size:818K _secos

8550
8550
M8550T -0.8A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE A D Power Dissipation B E C F G H 1Emitter 1 1 1 2Base 2 2 2 3Collector 3 3 3 J Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage V -40 V CBO Collector to Emitter Voltage V -25 V CEO Emitter to Base Voltage VEBO -6 V Collector Current - Continuous I -800 mA C Collector Power Dissipation P 625 mW C Junction, Storage Temperature T , T 125, -55~125 °C J STG ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Collector to Base Breakdown Voltage V -40 - - V I =100µA, I =0 (BR)CBO C E Collector to Emitter Breakdown Voltage V -25 - - V I =0.1mA, I =0 (BR)CEO C B Emitter to Ba

1.15. ss8550t.pdf Size:105K _secos

8550
8550
SS8550T PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM : 1 W Collector Current ICM : -1.5 A 1 Collector-base voltage 2 3 V(BR)CBO : - 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg : - 55 C ~ + 150 C 1. EMITTER 2 2. BASS 3 . COLLECTOR 3 O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V -40 V (BR)CBO Ic= -100?A, I =0 E Collector-emitter breakdown voltage V Ic= -25 V (BR)CEO -0.1mA, I =0 B Emitter-base breakdown voltage V -5 V (BR)EBO I =-100?A, I =0 E C Collector cut-off current I V =-40 V , I =0 -0.1 CBO CB E ?A Collector cut-off current I V =-20V , I =0 -0.1 CEO CE B ?A Emitter cut-off current I V =-5V, I =0 -0.1 EBO EB C ?A H V =-1V, I = 400 FE(1) CE C -100mA 85 DC current gain H V =-1V, I =

1.16. s8550t.pdf Size:343K _secos

8550
8550
S8550T PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 4.55 0.2 3.5 0.2 (1.27 Typ.) FEATURES 1.25 0.2 1 2 3 Excellent hFE linearity 2.54 0.1 1: Emitter 2: Base 3: Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -25 V Emitter to Base Voltage VEBO -5 V mA Collector Currrent IC -500 Total Power Dissipation PD 625 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base Breakdown Voltage V(BR)CBO -40 - - V IC = -100 ?A, IE = 0 Collector-emitter Breakdown Voltage V(BR)CEO -25 - - V IC = -1 mA, IB = 0 Emitter-base Breakdown Voltage V(BR)EBO -5 - - V IE = -100 ?A, IC = 0 Collector Cu

1.17. 8550sst.pdf Size:344K _secos

8550
8550
8550SST -1.5A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? General Purpose Switching and Amplification. G H ?Emitter ?Collector ?Base J CLASSIFICATION OF hFE (1) A D Millimeter Product-Rank 8550SST-B 8550SST-C 8550SST-D REF. B Min. Max. A 4.40 4.70 Range 85~160 120~200 160~300 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ?? ?? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -25 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -1.5 A Collector Power Dissipation PC 1 W Thermal Resistance From Junction to Ambient R?JA 125 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C

1.18. cn8050_cn8550_c_d.pdf Size:227K _cdil

8550
8550
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS CN8050 NPN CN8550 PNP TO-92 Plastic Package C B E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 6.0 V IC Collector Current 800 mA ICM Peak Collector Current 1.0 A IB Base Current 100 mA Power Dissipation@ Ta=25?C *Ptot 625 mW Tj Junction Temperature 150 ?C Tstg Storage Temperature Range - 55 to +150 ?C THERMAL RESISTANCE *Rth (j-a) Junction to Ambient in free air 200 K/W * Valid provided that leads are kept at ambient temperature at a distance of 2mm from case. ELECTRICAL CHARACTERISTICS (Ta=25?C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS VCEO IC=2mA, IB=0 Collector Emitter Voltage 25 V VCBO Collector Base Voltage IC=10µA, IE=0 40 V VEBO Emitter Base Voltage IE=100µA, IC=0 6 V hF

1.19. cmbt8550_c_d_e.pdf Size:276K _cdil

8550
8550
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8550 PIN CONFIGURATION (PNP) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 30 V VCEO Collector Emitter Voltage 25 V Emitter Base Voltage VEBO 6 V Collector Current Continuous IC 800 mA Collector Dissipation @ Ta=25?C PC 250 mW Operating and Storage Junction Tj, Tstg - 55 to +125 ?C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector Base Voltage VCBO IC=100µA, IE=0 30 V Collector Emitter Voltage VCEO IC=10mA, IB=0 25 V VEBO Emitter Base Voltage IE=10µA, IC=0 6 V Collector Cut off Current ICBO VCB=15V, IE=0 50 nA Emitter Cut off Current IEBO VEB=4V, IC=0 500 nA DC Current Gain hFE IC=5mA, VCE=1V 45 *IC=100mA, VCE=1V 100 400

1.20. cd8550.pdf Size:173K _cdil

8550
8550
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CD8550 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 25 V Collector -Base Voltage VCBO 40 V Emitter Base Voltage VEBO 6.0 V Collector Current IC 2.0 A Collector Power Dissipation PC 1.0 W Operating And Storage Junction Tj, Tstg -55 to +125 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Emitter Voltage VCEO IC=10mA, IB=0 25 - - V Collector -Base Voltage VCBO IC=100uA, IE=0 40 - - V Emitter Base Voltage VEBO IE=10uA, IC=0 6.0 - - V Collector Cut off Current ICBO VCB=20V, IE=0 - - 500 nA Emitter Cut off Current IEBO VEB=4V, IC=0 - - 100 nA DC Current Gain hFE IC=5mA,VCE=1V 45 - - IC=100mA,VCE=1V* 85 - 300 IC=800mA,VCE=1V 40 - - Collector Emitter Saturation Voltage VCE(Sat) IC=800mA,IB=80mA

1.21. mps8550s.pdf Size:390K _kec

8550
8550
SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to MPS8050S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 MAXIMUM RATING (Ta=25 ) G 1.90 H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 ~ 0.10 L 0.55 VCBO -40 V Collector-Base Voltage P P M 0.20 MIN N 1.00+0.20/-0.10 VCEO -25 V Collector-Emitter Voltage P 7 VEBO Emitter-Base Voltage -6 V M IC Collector Current -1.5 A 1. EMITTER PC * Collector Power Dissipation 350 mW 2. BASE Tj Junction Temperature 150 3. COLLECTOR Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) SOT-23 Marking hFE Rank Lot No. Type Name BJ ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-35V, IE=0 Collector Cut-off Current - - -100 nA IEBO VEB=-6V, IC=0 Emitter Cut-off

1.22. ktc8550a.pdf Size:360K _kec

8550
8550
SEMICONDUCTOR KTC8550A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to KTC8050A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25?) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage -35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage -30 V _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage -5 V L 2.30 M 0.45 MAX IC Collector Current -800 mA N 1.00 1 2 3 IE Emitter Current 800 mA 1. EMITTER 2. BASE PC Collector Power Dissipation 400 mW 3. COLLECTOR Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range TO-92 (F) ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-15V, IE=0 Collector Cut-off Current - - -50 nA V(BR)CBO IC=-0.5mA, IE=0 Collector-Base Breakdown Voltage -35 - - V V(BR)CEO IC=-1mA, IB=0 Collector-Emitter Breakdown Voltage -30

1.23. ktc8550s.pdf Size:393K _kec

8550
8550
SEMICONDUCTOR KTC8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8050S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 ~ 0.10 VCBO -35 V Collector-Base Voltage L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 VCEO -30 V Collector-Emitter Voltage P 7 VEBO Emitter-Base Voltage -5 V M IC Collector Current -800 mA 1. EMITTER IE Emitter Current 800 mA 2. BASE PC * Collector Power Dissipation 350 mW 3. COLLECTOR Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range SOT-23 * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BL ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-15V, IE=0 Collector Cut-off Current - - -50 nA V(BR)C

1.24. ktc8550.pdf Size:69K _kec

8550
8550
SEMICONDUCTOR KTC8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8050. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO -35 V Collector-Base Voltage G 0.85 H 0.45 VCEO -30 V Collector-Emitter Voltage _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage -5 V L 2.30 M 0.45 MAX IC Collector Current -800 mA N 1.00 1 2 3 IE Emitter Current 800 mA 1. EMITTER 2. BASE PC Collector Power Dissipation 625 mW 3. COLLECTOR Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-15V, IE=0 Collector Cut-off Current - - -50 nA V(BR)CBO IC=-0.5mA, IE=0 Collector-Base Breakdown Voltage -35 - - V V(BR)CEO IC=-1mA, IB=0 Collector-Emitter Breakdown Voltage -30 - - V

1.25. mps8550.pdf Size:45K _kec

8550
8550
SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to MPS8050. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25?) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO -40 V Collector-Base Voltage G 0.85 H 0.45 VCEO -25 V Collector-Emitter Voltage _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage -6 V L 2.30 M 0.45 MAX IC Collector Current -1.5 A N 1.00 1 2 3 625 1. EMITTER PC* Collector Power Dissipation mW 2. BASE 400 3. COLLECTOR Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range TO-92 *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-35V, IE=0 Collector Cut-off Current - - -100 nA IEBO VEB=-6V, IC=0 Emitter Cut-off Current - - -100 nA V(BR)CBO A, IE=0 Collector-Base Breakdown Voltage IC=-10

1.26. ss8550b.pdf Size:797K _htsemi

8550
8550
SS8 550 TRANSISTOR(PNP) SOT-323 FEA TURES Complimentary to SS8050 1. Base MARKING: Y2 2. Emitter 3. Collector MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 ?A hFE(1) VCE=-1V, IC=-100mA 120 400 DC current gain hFE(2)

1.27. m8550.pdf Size:721K _htsemi

8550
8550
M8 550 TRANSISTOR(PNP) SOT-23 FEATURES Power dissipation MARKING: Y21 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A PC Collector power dissipation 200 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100?A , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO* IC= -1mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100?A, IC=0 -6 V Collector cut-off current ICBO VCB= -35V , IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20V , IB=0 -0.1 ?A VCE=-1V, IC=-5mA 45 h FE(1) DC current gain VCE=-1V, IC=-100mA 85 300 h FE(2) VCE=-1V, IC=-800m

1.28. s8550.pdf Size:978K _htsemi

8550
8550
S8 550 S901 2 SOT-23 TRANSISTOR(PNP) FEATURES Complimentary to S8050 1. BASE Collector current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING : 2TY MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC = -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100?A, IC=0 Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 ?A hFE(1) V

1.29. pxt8550.pdf Size:477K _htsemi

8550
8550
PXT8 550 TRANSISTOR(PNP) SOT-89 FEATURES 1. BASE Compliment to PXT8050 1 2. COLLECTOR MARKING: Y2 2 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100?A, IC=0 -5 V Collector cut-off current ICBO VCB= -40 V,IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 ?A hFE(1) VCE= -1V, IC= -100mA 85 400 DC cu

1.30. ss8550.pdf Size:292K _gsme

8550
8550
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage -40 VCBO Vdc ???-???? -25(GMA6801) Collect-Emitter Voltage -25 VCEO Vdc ???-????? -18(GMA6801) Emitter-Base Voltage VEBO -5.0 Vdc ???-???? -500(S8550A,S8550) -1000(M8550) Collector Current -1200(MMT8550) Ic mAdc ????? -1500(SS8550) -1800(GMA6801) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. MMT8550=Y2 SS8550=Y.

1.31. m8550.pdf Size:292K _gsme

8550
8550
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage -40 VCBO Vdc ???-???? -25(GMA6801) Collect-Emitter Voltage -25 VCEO Vdc ???-????? -18(GMA6801) Emitter-Base Voltage VEBO -5.0 Vdc ???-???? -500(S8550A,S8550) -1000(M8550) Collector Current -1200(MMT8550) Ic mAdc ????? -1500(SS8550) -1800(GMA6801) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. MMT8550=Y2 SS8550=Y.

1.32. mmt8550.pdf Size:292K _gsme

8550
8550
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage -40 VCBO Vdc ???-???? -25(GMA6801) Collect-Emitter Voltage -25 VCEO Vdc ???-????? -18(GMA6801) Emitter-Base Voltage VEBO -5.0 Vdc ???-???? -500(S8550A,S8550) -1000(M8550) Collector Current -1200(MMT8550) Ic mAdc ????? -1500(SS8550) -1800(GMA6801) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. MMT8550=Y2 SS8550=Y.

1.33. s8550.pdf Size:292K _gsme

8550
8550
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage -40 VCBO Vdc ???-???? -25(GMA6801) Collect-Emitter Voltage -25 VCEO Vdc ???-????? -18(GMA6801) Emitter-Base Voltage VEBO -5.0 Vdc ???-???? -500(S8550A,S8550) -1000(M8550) Collector Current -1200(MMT8550) Ic mAdc ????? -1500(SS8550) -1800(GMA6801) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. MMT8550=Y2 SS8550=Y.

1.34. s8550a.pdf Size:292K _gsme

8550
8550
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage -40 VCBO Vdc ???-???? -25(GMA6801) Collect-Emitter Voltage -25 VCEO Vdc ???-????? -18(GMA6801) Emitter-Base Voltage VEBO -5.0 Vdc ???-???? -500(S8550A,S8550) -1000(M8550) Collector Current -1200(MMT8550) Ic mAdc ????? -1500(SS8550) -1800(GMA6801) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. MMT8550=Y2 SS8550=Y.

1.35. m8550_to-92.pdf Size:189K _lge

8550
8550
M8550(PNP) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -800 mA Dimensions in inches and (millimeters) PC Collector Power Dissipation 625 mW TJ Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO* IC= -0.1mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100?A, IC=0 -6 V Collector cut-off current ICBO VCB= -35V , IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20V , IB=0 -0.1 ?A hFE(1) VCE=-1V, IC=-5mA 45 DC current gain hFE(2) VCE=-1V, IC=-100mA 8

1.36. ss8550_sot-23.pdf Size:242K _lge

8550
8550
SS8550 SOT-23 Transistor(PNP) SOT-23 1. Base 2.Emitter 3.Collector Features Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 ?A hFE(1) VCE=-1V, IC

1.37. s8550_to-92.pdf Size:180K _lge

8550
8550
S8550(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Excellent hFE linearity MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units -40 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA Dimensions in inches and (millimeters) PC Collector Dissipation 625 mW TJ Junction Temperature 150 ? Tstg Junction and Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC= -100uA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100uA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 uA Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 uA Emitter cut-off current IEBO VEB= - 3V, IC=0 -0.1 uA hFE

1.38. s8550_sot-23.pdf Size:217K _lge

8550
8550
S8550 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8050 Collector current: IC=0.5A MARKING : 2TY Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC = -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100?A, IC=0 Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 ?A Emitter cut-off current IE

1.39. pxt8550.pdf Size:232K _lge

8550
8550
PXT8550 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 1.8 3. EMITTER 1.4 1.4 3 2.6 4.25 Features 2.4 3.75 Compliment to PXT8050 0.8 MIN 0.53 0.40 0.48 0.44 2x) MARKING: Y2 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100?A, IC=0 -5 V Collector cut-off current ICBO VCB= -40 V,

1.40. ss8550_to-92.pdf Size:177K _lge

8550
8550
SS8550(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PC : 1 W (TA=25?) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current-Continuous -1.5 A Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Emitter cut-off current ICEO VCE=-20V, IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 uA hFE(1) VCE=-1V, IC=-100mA 85 400 DC cur

1.41. 8550s_to-92.pdf Size:166K _lge

8550
8550
8550S(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 ? Tstg Junction and Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100uA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100uA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 uA Collector cut-off current ICEO VCE= -20V,IB=0 -0.1 uA Emitter cut-off current IEBO VEB= - 3V, IC=0 -0.1 uA hFE(1

1.42. m8550_sot-23.pdf Size:414K _lge

8550
8550
M8550 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y21 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A PC Collector power dissipation 200 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100?A , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO* IC= -1mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100?A, IC=0 -6 V Collector cut-off current ICBO VCB= -35V , IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20V , IB=0 -0.1 ?A VCE=-1V, IC=-5mA 45 h FE(1) DC current gain VCE=-1V,

1.43. ss8550w.pdf Size:264K _wietron

8550
8550
SS8550W PNP Plastic-Encapsulate Transistor 3 P b Lead(Pb)-Free 1 2 MAXIMUM RATINGS (TA=25? unless otherwise noted) 1. BASE Symbol Parameter Value Units 2. EMITTER 3. COLLECTOR V(BR)CBO Collector- Base Voltage -40 V ICM Collector Current -1.5 A SOT-323(SC-70) . PCM Power Dissipation (Tamb=25°C) W 0.2 TJ Junction Temperature -55 to +150 ? Tstg Storage Temperature -55 to +150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Sy mbol Test conditions MIN MAX UNIT -40 V Collector-base breakdown voltage V(BR)CBO Ic= -100 ?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100 ?A, IC=0 Collector cut-off current ICBO VCB= -40 V , IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20 V , IB=0 -0.1 ?A , Emitter cut-off current IEBO VEB= -5V IC=0 -0.1 ?A hFE (1) VCE= -1V, IC= -100mA 120 350 DC current gain hFE (2) VCE= -1V, IC= -800mA 40 Collector-emitter s

1.44. ss8550.pdf Size:166K _wietron

8550
8550
SS8550 Plastic-Encapsulate Transistors TO-92 PNP Silicon COLLECTOR 3 2 BASE 1 1. EMITTER 2 3 1 2. BASE EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol SS8550 Unit Collector-Emitter Voltage V CEO -25 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -1.5 Adc Total Device Dissipation T =25 C PD W A 1.0 Junction Temperature T 150 j C -55 to +150 Storage Temperature Tstg C DEVICE MARKING SS8550=SS8550D ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (1) (IC= -0.1 mAdc, IB=0) V(BR)CEO -25 Vdc - V(BR)CBO -40 Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Vdc - Vdc V(BR)EBO -5.0 Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) - -0.1 ICBO uAdc Collector Cutoff Current (V = -40 Vdc, IE=0 Vdc) CB - IEBO Emitter Cutoff Current(VEB = -5 Vdc, IC =0 Vdc) uAdc -0.1 < <2.0% 1. Pulse Test: Pulse Width 300 us, Duty C

1.45. s8550.pdf Size:1656K _wietron

8550
8550
S8550 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. E MIT T E R 1 2 2. B A SE 3 3. COL L E CTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-E m itter Voltage V CE O -2 5 Vdc Collector-B as e Voltage VCB O -4 0 Vdc E m itter-B as e VOltage VE B O -5 . 0 Vdc Collector Current IC -5 0 0 mAdc P 0 . 6 2 5 Total Device Dis s ipation T =2 5 C W A D Junction Tem perature T 1 5 0 j C S torage, Tem perature Ts tg C -5 5 to +1 5 0 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-E mitter B reakdown Voltage (IC= -0 . 1 mAdc, IB =0 ) V(B R )CE O -2 5 Vdc - Collector-B as e B reakdown Voltage (IC= -1 0 0 µAdc, IE =0 ) V(B R )CB O -4 0 Vdc - Vdc V(B R )E B O -5 . 0 E m itter-B as e B reakdown Voltage (IE = -1 0 0 µAdc, IC=0 ) uAdc ICE 0 Collector Cutoff Current (V = -2 0 Vdc, I =0 ) - -0 . 2 CE B - ICB O uAdc -0 . 1 Collector Cutoff Current (V = -4 0 Vdc, IE =0 ) CB - IE B O E m itte

1.46. m8550lt1.pdf Size:429K _wietron

8550
8550
M8550LT1 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 800 300 2.4 417 0.1 25 100 40 5.0 100 0.15 u 35 u 4.0 0.15 WEITRON 1/4 15-Jul-10 http://www.weitron.com.tw M8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - (IC=100 mAdc, VCE=1.0 Vdc) hFE (1) 600 100 Collector-Emitter Saturation Voltage VCE(sat) - 0.5 Vdc (IC=800 mAdc, IB=80mAdc) CLASSIFICATION OF h FE(1) P Rank Q R S 100-200 150-300 200-400 300-600 Range Marking 85P 1YD 1YF 1YH WEITRON 2/4 15-Jul-10 http://www.weitron.com.tw M8550LT1 WEITRON 3/4 15-Jul-10 http://www.weitron.com.tw M8550LT1 SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 D G G 1.70 2.10 E H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L 0.30 0.61 L M J M 0.076 0.25 WEITRO

1.47. ss8550lt1.pdf Size:165K _wietron

8550
8550
SS8550LT1 PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 Value VCEO -25 -40 -5.0 -1500 300 2.4 417 -0.1 -25 -40 -100 -5.0 -100 -0.15 u -40 -0.15 u -5.0 WEITRON 27-Jul-2012 1/2 http://www.weitron.com.tw SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - (IC=-100 mAdc, VCE=1.0 Vdc) hFE 600 100 Collector-Emitter Saturation Voltage VCE(sat) - Vdc -0.5 (IC=-800 mAdc, IB=-80mAdc) CLASSIFICATION OF h FE P Rank Q R S Range 100-200 150-300 200-400 300-600 Marking 1HB 1HD 1HF 1HH SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 D G G 1.70 2.10 E H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L 0.30 0.61 L M J M 0.076 0.25 WEITRON 27-Jul-2012 2/2 http://www.weitron.com.tw

1.48. 8550hxlt1.pdf Size:490K _willas

8550
8550
FM120-M 8550HXLT1 WILLAS THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. PNP Silicon 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. FEATURE • Gu High current capacity in compact package. ardring for overvoltage protection. 0.071(1.8) • Ultra high-speed switching. IC =1.5A. 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. Epitaxial planar type. • Lead-free parts meet environmental standards of PNP complement: 8550H MIL-STD-19500 /228 We declare that the material of product compliance with RoHS requi

1.49. 8550slt1.pdf Size:500K _willas

8550
8550
FM120-M WILLAS 8550SLT1THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers SOT-23 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to TRANSISTOR ptimize board space. (PNP) o 0.146(3.7) • Low power loss, high efficiency. FEATURES 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. 1. BASE • Guardring for overvoltage protection. 0.071(1.8) 2. EMITTER • Ultra high-speed switching. 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. 3. COLLECTOR Collector current: ICs meet environmental standards of =0.5A • Lead-free part MIL-STD-19500 /228 • RoHS product for packing code suffix "G" MARKING : Halogen free pr

1.50. 8550plt1_8550qlt1_8550rlt1.pdf Size:412K _willas

8550
8550
FM120-M WILLAS 8550xLT1 THRU General Purpose BARRIER RECTIFIERS -20V- 200V Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. PNP Silicon 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. FEATUREent capability, low forward voltage drop. • High curr • High surge capability. We declare that the material of product compliance with RoHS requirements. • Guardring for overvoltage protection. 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" DEVICE MARKING AND ORDERING INFORMATION Halogen fre

1.51. ha8550.pdf Size:52K _hsmc

8550
8550
Spec. No. : HE6108 HI-SINCERITY Issued Date : 1997.09.05 Revised Date : 2004.11.23 MICROELECTRONICS CORP. Page No. : 1/5 HA8550 PNP EPITAXIAL PLANAR TRANSISTOR Description The HA8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. Features TO-92 • High total power dissipation (PT: 2W, TC=25°C) • High collector current (IC: 1.5A) • Complementary to HA8050 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...................................................................................................................... 1 W Total Power Dissi

1.52. he8550.pdf Size:46K _hsmc

8550
8550
Spec. No. : HE6114 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2006.07.28 MICROELECTRONICS CORP. Page No. : 1/4 HE8550 PNP Epitaxial Planar Transistor Description The HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature..................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ........................................................................................................................................ 1 W • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ...................

1.53. he8550s.pdf Size:55K _hsmc

8550
8550
Spec. No. : HE6129 HI-SINCERITY Issued Date : 1993.01.15 Revised Date : 2004.07.26 MICROELECTRONICS CORP. Page No. : 1/5 HE8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8550S is designed for general purpose amplifier applications. Features TO-92 • High DC Current gain: 100-500 at IC=150mA • Complementary to HE8050S Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .........................

1.54. ha8550s.pdf Size:55K _hsmc

8550
8550
Spec. No. : HE6109 HI-SINCERITY Issued Date : 1997.09.05 Revised Date : 2005.01.20 MICROELECTRONICS CORP. Page No. : 1/5 HA8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features • High DC Current Gain (hFE=100~500 at IC=150mA) • Complementary to HA8050S Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ....................

1.55. hmbt8550.pdf Size:39K _hsmc

8550
8550
Spec. No. : HE6813 HI-SINCERITY Issued Date : 1997.08.11 Revised Date : 2004.08.17 MICROELECTRONICS CORP. Page No. : 1/4 HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current: hFE=150-400 at IC=150mA • Complementary to HMBT8050 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ................................

See also transistors datasheet: 74T2 , 7NU73 , 7NU74 , 8003BBA , 8003BBB , 8050 , 80DA020D , 810BLY-A , S9014 , 9003 , 9010 , 9011 , 9011D , 9011E , 9011F , 9011G , 9011H .

Keywords

 8550 Datasheet  8550 Datenblatt  8550 RoHS  8550 Distributor
 8550 Application Notes  8550 Component  8550 Circuit  8550 Schematic
 8550 Equivalent  8550 Cross Reference  8550 Data Sheet  8550 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com