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8550
  8550
  8550
 
8550
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8550
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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS5006
HEPS5011 .. HSE163
HSE164 .. IR2002
IR2500 .. K2112A
K2112B .. KRA225
KRA225M .. KRC122
KRC122M .. KRC886T
KRX101E .. KSB811
KSB811-G .. KSC5024
KSC5024-O .. KSE200
KSE210 .. KT216B
KT216V .. KT357A
KT357B .. KT661A
KT662A .. KT818AM
KT818B .. KT928A
KT928B .. KTC3198L
KTC3199 .. KU601
KU602 .. MD2218F
MD2219 .. MJ15023
MJ15024 .. MJE13007F
MJE13007M .. MJH11020
MJH11021 .. MMBT2219A
MMBT2221 .. MMBTA92W
MMBTA93 .. MP1558
MP1558A .. MP8212
MP8213 .. MPS4121
MPS4122 .. MQ2218A
MQ2219 .. MT3S20TU
MT3S21P .. NA22FY
NA22H .. NB022EL
NB022ET .. NB221F
NB221FG .. NKT275
NKT275J .. NR431HG
NR431HR .. NTE256
NTE2560 .. P30
P302 .. PDTA123JM
PDTA123JT .. PMD20K120
PMD20K150 .. PTB20082
PTB20091 .. RCA9202A
RCA9202B .. RN1913FS
RN1961 .. RN2967
RN2967CT .. S8550T
S876T .. SF115C
SF115D .. SMBT3904
SMBT3904PN .. SRC1210UF
SRC1211 .. STN2222A
STN2222AS .. T1497
T1501 .. TD162/1
TD162A .. TIP34F
TIP35 .. TIX888
TIX890 .. TN6707A
TN6714A .. TRF5174
TRF641 .. UN211E
UN211F .. UPT614
UPT615 .. ZTX109BL
ZTX109BM .. ZTX618
ZTX649 .. ZXTPS720MC
 
8550 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

8550 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 8550

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 15

Forward current transfer ratio (hFE), min: 85

Noise Figure, dB: -

Package of 8550 transistor: TO92

8550 Equivalent Transistors - Cross-Reference Search

8550 PDF doc:

1.1. ss8550.pdf Size:347K _fairchild_semi

8550
8550
SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8050 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25C) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100A, IE=0 -40 V BVCEO Collector-Emitter Breakdown Voltage IC= -2mA, IB=0 -25 V BVEBO Emitter-Base Breakdown Voltage IE= -100A, IC=0 -6 V ICBO Collector Cut-off Current VCB= -35V, IE=0 -100 nA IEBO Emitter Cut-off Current VEB= -6V, IC=0 -100

1.2. ss8550.pdf Size:64K _samsung

8550
8550
SS8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. Complimentary to SS8050 Collector Current IC= -1.5A Collector Dissipation:PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1.5 A Collector Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 -40 V Collector-Emitter Breakdown Voltage BVCEO IC= -2mA, IB=0 -25 V Emitter-Base Breakdown Voltage BVEBO IE= -100 , IC=0 V -6 Collector Cut-off Current ICBO VCB= -35V, IE=0 -100 nA Emitter Cut-off Current IEBO VEB= -6V, IC=0 -100 nA DC Current Gain hFE1 VCE= -1V, IC= -5mA 45 170 hF

1.3. utc8550s.pdf Size:22K _utc

8550
8550
UTC 8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S APPLICATIONS *Class B push-pull audio amplifier *General purpose applications TO-92 1:EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETERS SYMBOL RATING UNITS Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector dissipation(Ta=25C Pc 1 W Collector current Ic -800 mA Junction Temperature Tj 150 C Storage Temperature TSTG -65 ~ +150 C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-base breakdown voltage BVCBO Ic=-100A,IE=0 -30 V Collector-emitter breakdown voltage BVCEO Ic=-1mA,IB=0 -20 V Emitter-base breakdown voltage BVEBO IE=-100A,Ic=0 -5 V Collector cut-off current ICBO

1.4. he8550l.pdf Size:21K _utc

8550
8550
UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *Complimentary to UTC HE8050 TO-92L 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V Collector Dissipation(Ta=25 ) Pc 1 W Collector Current Ic -1.5 A Junction Temperature Tj 150 C Storage Temperature TSTG -65 ~ +150 C ELECTRICAL CHARACTERISTICS(Tj=25C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=-100A,IE=0 -40 V Collector-Emitter Breakdown Voltage BV

1.5. 8550s.pdf Size:182K _utc

8550
8550
UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH 3 CURRENT SMALL SIGNAL 1 PNP TRANSISTOR 2 SOT-23 DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES 1 *Collector current up to 700mA TO-92 *Collector-Emitter voltage up to 20 V *Complimentary to 8050S ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen-Free 1 2 3 8550S-x-AE3-R 8550SL-x-AE3-R 8550SG-x-AE3-R SOT-23 E B C Tape Reel 8550S-x-T92-B 8550SL-x-T92-B 8550SG-x-T92-B TO-92 E C B Tape Box 8550S-x-T92-K 8550SL-x-T92-K 8550SG-x-T92-K TO-92 E C B Bulk MARKING (For SOT-23 Package) www.unisonic.com.tw 1 of 4 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R206-002,E 8550S PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified ) PARAMETER SYMBOL RATING UNI

1.6. he8550.pdf Size:156K _utc

8550
8550
UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. FEATURES * Collector Current up to 1.5A * Collector-Emitter Voltage up to 25V * Complimentary to UTC HE8050 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 HE8550-x-AB3-R HE8550L-x-AB3-R HE8550G-x-AB3-R SOT-89 B C E Tape Reel HE8550-x-AE3-R HE8550L-x-AE3-R HE8550G-x-AE3-R SOT-23 E B C Tape Reel HE8550-x-T92-B HE8550L-x-T92-B HE8550G-x-T92-B TO-92 E C B Tape Box HE8550-x-T92-K HE8550L-x-T92-K HE8550G-x-T92-K TO-92 E C B Bulk HE8550-x-T9N-B HE8550L-x-T9N-B HE8550G-x-T9N-B TO-92NL E C B Tape Box HE8550-x-T9N-K HE8550L-x-T9N-K HE8550G-x-T9N-K TO-92NL E C B Bulk MARKING(For SOT-23 Package)

1.7. s8550.pdf Size:138K _utc

8550
8550
UNISONIC TECHNOLOGIES CO., LTD S8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR ? DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP 1 transistor, designed for Class B push-pull audio amplifier and TO-92 general purpose applications. ? FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to UTC S8050 ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 S8550L-x-T92-B S8550G-x-T92-B TO-92 E B C Tape Box S8550L-x-T92-K S8550G-x-T92-K TO-92 E B C Bulk www.unisonic.com.tw 1 of 4 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R201-013. D S8550 PNP SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 mA C

1.8. sps8550.pdf Size:187K _auk

8550
8550
SPS8550 Semiconductor Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with SPS8050 Ordering Information Type NO. Marking Package Code SPS8550 SPS8550 TO-92 Outline Dimensions unit : mm 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector KST-9105-002 1 SPS8550 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage VEBO -6.5 V Collector current IC -1.5 A Collector dissipation PC 625 mW Junction temperature TJ 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -15 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V Emitter-Base breakdown vo

1.9. sts8550.pdf Size:96K _auk

8550
8550
STS8550 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • High current application • Radio in class B push-pull operation Feature • Complementary pair with STS8050 Ordering Information Type NO. Marking Package Code STS8550 STS8550 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector KST-9013-000 1 4.5 ± 0.1 14.0 ± 0.40 0.38 1.20 ± 0.1 STS8550 Absolute maximum ratings (Ta=25° °C) ° ° Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -30 V Collector-Emitter voltage VCEO -25 V Emitter-Base voltage VEBO -6 V Collector current IC -800 mA Emitter current IE 800 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25° °C) ° ° Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base break

1.10. sta8550sf.pdf Size:279K _auk

8550
8550
STA8550SF PNP Silicon Transistor Descriptions PIN Connection • High current application • Radio in class B push-pull operation 3 Feature 1 • Complementary pair with STC8050SF 2 SOT-23F Ordering Information Type NO. Marking Package Code 8B ? ? STA8550SF SOT-23F ? ? ? ?Device Code ?hFE Rank ?Year&Week Code Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -6 V Collector current IC -800 mA Collector power dissipation PC* 350 mW Junction temperature TJ 150 °C Storage temperature range Tstg -55~150 °C * : Package mounted on 99.5% Alumina 10?8?0.6mm Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO IC=-1mA, IB=0 -25 - - V Collector cut-off current ICBO VCB=-30V, IE=0 - - -50 nA Emitter cut-off current IEBO VEB=-6V, IC=0 - - -50

1.11. ss8550.pdf Size:329K _secos

8550
8550
SS8550 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector 3 FEATURES SOT-23 Power dissipation Collector 3 1 Dim Min Max PCM : 0.3 W Base A 2.800 3.040 1 Base B 1.200 1.400 2 Collector Current Emitter C 0.890 1.110 2 ICM : - 1.5 A D 0.370 0.500 Emitter G 1.780 2.040 Collector-base voltage A H 0.013 0.100 L V(BR)CBO : - 40 V J J 0.085 0.177 K 3 K 0.450 0.600 Top View S B Operating & storage junction temperature 1 2 L 0.890 1.020 C S 2.100 2.500 TJ, TSTG : - 55°C ~ + 150°C V G H D V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS at Ta = 25°C Symbol Min. Typ. Max. Unit Test Conditions BVCBO -40 - - V Ic = 100?A, IE = 0 BVCEO -25 - - V Ic = -0.1mA, IB = 0 BVEBO -5 - - V IE = -100?A, IC = 0 ICBO - - -0.1 ?A VCB = -40 V, IE = 0 ICEO - - -0.1 ?A VCE = -20V, IB = 0 IEBO - - -0.1 ?A VEB = -5V, IC = 0 VCE(sa

1.12. ss8550t.pdf Size:105K _secos

8550
8550
SS8550T PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM : 1 W Collector Current ICM : -1.5 A 1 Collector-base voltage 2 3 V(BR)CBO : - 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg : - 55 C ~ + 150 C 1. EMITTER 2 2. BASS 3 . COLLECTOR 3 O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V -40 V (BR)CBO Ic= -100?A, I =0 E Collector-emitter breakdown voltage V Ic= -25 V (BR)CEO -0.1mA, I =0 B Emitter-base breakdown voltage V -5 V (BR)EBO I =-100?A, I =0 E C Collector cut-off current I V =-40 V , I =0 -0.1 CBO CB E ?A Collector cut-off current I V =-20V , I =0 -0.1 CEO CE B ?A Emitter cut-off current I V =-5V, I =0 -0.1 EBO EB C ?A H V =-1V, I = 400 FE(1) CE C -100mA 85 DC current gain H V =-1V, I =

1.13. 8550sst.pdf Size:344K _secos

8550
8550
8550SST -1.5A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? General Purpose Switching and Amplification. G H ?Emitter ?Collector ?Base J CLASSIFICATION OF hFE (1) A D Millimeter Product-Rank 8550SST-B 8550SST-C 8550SST-D REF. B Min. Max. A 4.40 4.70 Range 85~160 120~200 160~300 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ?? ?? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -25 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -1.5 A Collector Power Dissipation PC 1 W Thermal Resistance From Junction to Ambient R?JA 125 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C

1.14. s8550t.pdf Size:343K _secos

8550
8550
S8550T PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 4.55 0.2 3.5 0.2 (1.27 Typ.) FEATURES 1.25 0.2 1 2 3 Excellent hFE linearity 2.54 0.1 1: Emitter 2: Base 3: Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -25 V Emitter to Base Voltage VEBO -5 V mA Collector Currrent IC -500 Total Power Dissipation PD 625 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base Breakdown Voltage V(BR)CBO -40 - - V IC = -100 ?A, IE = 0 Collector-emitter Breakdown Voltage V(BR)CEO -25 - - V IC = -1 mA, IB = 0 Emitter-base Breakdown Voltage V(BR)EBO -5 - - V IE = -100 ?A, IC = 0 Collector Cu

1.15. ss8550w.pdf Size:115K _secos

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8550
SS8550W PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM : 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM : -1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO : - 40 V S Top View B K 0.350 0.500 Operating & storage junction temperature 1 2 L 0.590 0.720 O O Tj, Tstg : - 55 C ~ + 150 C S 2.000 2.400 V G V 0.280 0.420 Marking : Y2 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V -40 V (BR)CBO Ic= 100?A, I =0 E Collector-emitter breakdown voltage V Ic=-0.1mA, I =0 -25 V (BR)CEO B Emitter-base breakdown voltage V -5 V (BR)EBO I =-100?A,I =0 E C Collector cut-off current I V =-40 V , I =0 -0.1 CBO CB E ?A

1.16. m8550.pdf Size:738K _secos

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8550
M8550 -40V, -0.8A, 200mW PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Power dissipation A L 3 3 MARKING Top View C B 1 1 2 Product Marking Code 2 K E M8550 Y21 D H J F G CLASSIFICATION OF hFE(2) Product-Rank M8550-L M8550-H Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18 Range 85-200 200-300 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 PACKAGE INFORMATION Package MPQ Leader Size Collector 3 SOT-23 3K 7’ inch 1 Base 2 Emitter MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Base Voltage V -40 V CBO Collector - Emitter Voltage V -25 V CEO Emitter - Base Voltage V -6 V EBO Collector Current - Continuous I -0.8 A C Collector Power Dissipation P 0.2 W C Junct

1.17. m8550t.pdf Size:818K _secos

8550
8550
M8550T -0.8A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE A D Power Dissipation B E C F G H 1Emitter 1 1 1 2Base 2 2 2 3Collector 3 3 3 J Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage V -40 V CBO Collector to Emitter Voltage V -25 V CEO Emitter to Base Voltage VEBO -6 V Collector Current - Continuous I -800 mA C Collector Power Dissipation P 625 mW C Junction, Storage Temperature T , T 125, -55~125 °C J STG ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Collector to Base Breakdown Voltage V -40 - - V I =100µA, I =0 (BR)CBO C E Collector to Emitter Breakdown Voltage V -25 - - V I =0.1mA, I =0 (BR)CEO C B Emitter to Ba

1.18. s8550.pdf Size:196K _secos

8550
8550
S8550 PNP Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Dim Min Max Collector 3 A 2.800 3.040 Complimentary to S8050 B 1.200 1.400 1 Base C 0.890 1.110 2 Emitter Collector Current: IC=0.5A D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J 0.085 0.177 3 K 0.450 0.600 S Top View B 12 L 0.890 1.020 S 2.100 2.500 MARKING: 2TY V G V 0.450 0.600 All Dimension in mm C H J D K O MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdow

1.19. cd8550.pdf Size:173K _cdil

8550
8550
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CD8550 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 25 V Collector -Base Voltage VCBO 40 V Emitter Base Voltage VEBO 6.0 V Collector Current IC 2.0 A Collector Power Dissipation PC 1.0 W Operating And Storage Junction Tj, Tstg -55 to +125 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Emitter Voltage VCEO IC=10mA, IB=0 25 - - V Collector -Base Voltage VCBO IC=100uA, IE=0 40 - - V Emitter Base Voltage VEBO IE=10uA, IC=0 6.0 - - V Collector Cut off Current ICBO VCB=20V, IE=0 - - 500 nA Emitter Cut off Current IEBO VEB=4V, IC=0 - - 100 nA DC Current Gain hFE IC=5mA,VCE=1V 45 - - IC=100mA,VCE=1V* 85 - 300 IC=800mA,VCE=1V 40 - - Collector Emitter Saturation Voltage VCE(Sat) IC=800mA,IB=80mA

1.20. cn8050_cn8550_c_d.pdf Size:227K _cdil

8550
8550
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS CN8050 NPN CN8550 PNP TO-92 Plastic Package C B E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 6.0 V IC Collector Current 800 mA ICM Peak Collector Current 1.0 A IB Base Current 100 mA Power Dissipation@ Ta=25?C *Ptot 625 mW Tj Junction Temperature 150 ?C Tstg Storage Temperature Range - 55 to +150 ?C THERMAL RESISTANCE *Rth (j-a) Junction to Ambient in free air 200 K/W * Valid provided that leads are kept at ambient temperature at a distance of 2mm from case. ELECTRICAL CHARACTERISTICS (Ta=25?C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS VCEO IC=2mA, IB=0 Collector Emitter Voltage 25 V VCBO Collector Base Voltage IC=10µA, IE=0 40 V VEBO Emitter Base Voltage IE=100µA, IC=0 6 V hF

1.21. cmbt8550_c_d_e.pdf Size:276K _cdil

8550
8550
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8550 PIN CONFIGURATION (PNP) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 30 V VCEO Collector Emitter Voltage 25 V Emitter Base Voltage VEBO 6 V Collector Current Continuous IC 800 mA Collector Dissipation @ Ta=25?C PC 250 mW Operating and Storage Junction Tj, Tstg - 55 to +125 ?C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector Base Voltage VCBO IC=100µA, IE=0 30 V Collector Emitter Voltage VCEO IC=10mA, IB=0 25 V VEBO Emitter Base Voltage IE=10µA, IC=0 6 V Collector Cut off Current ICBO VCB=15V, IE=0 50 nA Emitter Cut off Current IEBO VEB=4V, IC=0 500 nA DC Current Gain hFE IC=5mA, VCE=1V 45 *IC=100mA, VCE=1V 100 400

1.22. mps8550s.pdf Size:390K _kec

8550
8550
SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to MPS8050S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 MAXIMUM RATING (Ta=25 ) G 1.90 H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 ~ 0.10 L 0.55 VCBO -40 V Collector-Base Voltage P P M 0.20 MIN N 1.00+0.20/-0.10 VCEO -25 V Collector-Emitter Voltage P 7 VEBO Emitter-Base Voltage -6 V M IC Collector Current -1.5 A 1. EMITTER PC * Collector Power Dissipation 350 mW 2. BASE Tj Junction Temperature 150 3. COLLECTOR Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) SOT-23 Marking hFE Rank Lot No. Type Name BJ ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-35V, IE=0 Collector Cut-off Current - - -100 nA IEBO VEB=-6V, IC=0 Emitter Cut-off

1.23. ktc8550a.pdf Size:360K _kec

8550
8550
SEMICONDUCTOR KTC8550A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to KTC8050A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25?) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage -35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage -30 V _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage -5 V L 2.30 M 0.45 MAX IC Collector Current -800 mA N 1.00 1 2 3 IE Emitter Current 800 mA 1. EMITTER 2. BASE PC Collector Power Dissipation 400 mW 3. COLLECTOR Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range TO-92 (F) ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-15V, IE=0 Collector Cut-off Current - - -50 nA V(BR)CBO IC=-0.5mA, IE=0 Collector-Base Breakdown Voltage -35 - - V V(BR)CEO IC=-1mA, IB=0 Collector-Emitter Breakdown Voltage -30

1.24. ktc8550.pdf Size:69K _kec

8550
8550
SEMICONDUCTOR KTC8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8050. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO -35 V Collector-Base Voltage G 0.85 H 0.45 VCEO -30 V Collector-Emitter Voltage _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage -5 V L 2.30 M 0.45 MAX IC Collector Current -800 mA N 1.00 1 2 3 IE Emitter Current 800 mA 1. EMITTER 2. BASE PC Collector Power Dissipation 625 mW 3. COLLECTOR Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-15V, IE=0 Collector Cut-off Current - - -50 nA V(BR)CBO IC=-0.5mA, IE=0 Collector-Base Breakdown Voltage -35 - - V V(BR)CEO IC=-1mA, IB=0 Collector-Emitter Breakdown Voltage -30 - - V

1.25. mps8550.pdf Size:45K _kec

8550
8550
SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to MPS8050. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25?) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO -40 V Collector-Base Voltage G 0.85 H 0.45 VCEO -25 V Collector-Emitter Voltage _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage -6 V L 2.30 M 0.45 MAX IC Collector Current -1.5 A N 1.00 1 2 3 625 1. EMITTER PC* Collector Power Dissipation mW 2. BASE 400 3. COLLECTOR Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range TO-92 *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-35V, IE=0 Collector Cut-off Current - - -100 nA IEBO VEB=-6V, IC=0 Emitter Cut-off Current - - -100 nA V(BR)CBO A, IE=0 Collector-Base Breakdown Voltage IC=-10

1.26. ktc8550s.pdf Size:393K _kec

8550
8550
SEMICONDUCTOR KTC8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8050S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 ~ 0.10 VCBO -35 V Collector-Base Voltage L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 VCEO -30 V Collector-Emitter Voltage P 7 VEBO Emitter-Base Voltage -5 V M IC Collector Current -800 mA 1. EMITTER IE Emitter Current 800 mA 2. BASE PC * Collector Power Dissipation 350 mW 3. COLLECTOR Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range SOT-23 * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BL ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-15V, IE=0 Collector Cut-off Current - - -50 nA V(BR)C

1.27. m8550.pdf Size:721K _htsemi

8550
8550
M8 550 TRANSISTOR(PNP) SOT-23 FEATURES Power dissipation MARKING: Y21 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A PC Collector power dissipation 200 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100?A , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO* IC= -1mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100?A, IC=0 -6 V Collector cut-off current ICBO VCB= -35V , IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20V , IB=0 -0.1 ?A VCE=-1V, IC=-5mA 45 h FE(1) DC current gain VCE=-1V, IC=-100mA 85 300 h FE(2) VCE=-1V, IC=-800m

1.28. ss8550b.pdf Size:797K _htsemi

8550
8550
SS8 550 TRANSISTOR(PNP) SOT-323 FEA TURES Complimentary to SS8050 1. Base MARKING: Y2 2. Emitter 3. Collector MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 ?A hFE(1) VCE=-1V, IC=-100mA 120 400 DC current gain hFE(2)

1.29. pxt8550.pdf Size:477K _htsemi

8550
8550
PXT8 550 TRANSISTOR(PNP) SOT-89 FEATURES 1. BASE Compliment to PXT8050 1 2. COLLECTOR MARKING: Y2 2 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100?A, IC=0 -5 V Collector cut-off current ICBO VCB= -40 V,IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 ?A hFE(1) VCE= -1V, IC= -100mA 85 400 DC cu

1.30. s8550.pdf Size:978K _htsemi

8550
8550
S8 550 S901 2 SOT-23 TRANSISTOR(PNP) FEATURES Complimentary to S8050 1. BASE Collector current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING : 2TY MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC = -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100?A, IC=0 Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 ?A hFE(1) V

1.31. ss8550.pdf Size:292K _gsme

8550
8550
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage -40 VCBO Vdc ???-???? -25(GMA6801) Collect-Emitter Voltage -25 VCEO Vdc ???-????? -18(GMA6801) Emitter-Base Voltage VEBO -5.0 Vdc ???-???? -500(S8550A,S8550) -1000(M8550) Collector Current -1200(MMT8550) Ic mAdc ????? -1500(SS8550) -1800(GMA6801) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. MMT8550=Y2 SS8550=Y.

1.32. mmt8550.pdf Size:292K _gsme

8550
8550
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage -40 VCBO Vdc ???-???? -25(GMA6801) Collect-Emitter Voltage -25 VCEO Vdc ???-????? -18(GMA6801) Emitter-Base Voltage VEBO -5.0 Vdc ???-???? -500(S8550A,S8550) -1000(M8550) Collector Current -1200(MMT8550) Ic mAdc ????? -1500(SS8550) -1800(GMA6801) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. MMT8550=Y2 SS8550=Y.

1.33. m8550.pdf Size:292K _gsme

8550
8550
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage -40 VCBO Vdc ???-???? -25(GMA6801) Collect-Emitter Voltage -25 VCEO Vdc ???-????? -18(GMA6801) Emitter-Base Voltage VEBO -5.0 Vdc ???-???? -500(S8550A,S8550) -1000(M8550) Collector Current -1200(MMT8550) Ic mAdc ????? -1500(SS8550) -1800(GMA6801) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. MMT8550=Y2 SS8550=Y.

1.34. s8550a.pdf Size:292K _gsme

8550
8550
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage -40 VCBO Vdc ???-???? -25(GMA6801) Collect-Emitter Voltage -25 VCEO Vdc ???-????? -18(GMA6801) Emitter-Base Voltage VEBO -5.0 Vdc ???-???? -500(S8550A,S8550) -1000(M8550) Collector Current -1200(MMT8550) Ic mAdc ????? -1500(SS8550) -1800(GMA6801) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. MMT8550=Y2 SS8550=Y.

1.35. s8550.pdf Size:292K _gsme

8550
8550
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage -40 VCBO Vdc ???-???? -25(GMA6801) Collect-Emitter Voltage -25 VCEO Vdc ???-????? -18(GMA6801) Emitter-Base Voltage VEBO -5.0 Vdc ???-???? -500(S8550A,S8550) -1000(M8550) Collector Current -1200(MMT8550) Ic mAdc ????? -1500(SS8550) -1800(GMA6801) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. MMT8550=Y2 SS8550=Y.

1.36. m8550_sot-23.pdf Size:414K _lge

8550
8550
M8550 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y21 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A PC Collector power dissipation 200 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100?A , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO* IC= -1mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100?A, IC=0 -6 V Collector cut-off current ICBO VCB= -35V , IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20V , IB=0 -0.1 ?A VCE=-1V, IC=-5mA 45 h FE(1) DC current gain VCE=-1V,

1.37. 8550s_to-92.pdf Size:166K _lge

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8550
8550S(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 ? Tstg Junction and Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100uA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100uA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 uA Collector cut-off current ICEO VCE= -20V,IB=0 -0.1 uA Emitter cut-off current IEBO VEB= - 3V, IC=0 -0.1 uA hFE(1

1.38. s8550_to-92.pdf Size:180K _lge

8550
8550
S8550(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Excellent hFE linearity MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units -40 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA Dimensions in inches and (millimeters) PC Collector Dissipation 625 mW TJ Junction Temperature 150 ? Tstg Junction and Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC= -100uA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100uA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 uA Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 uA Emitter cut-off current IEBO VEB= - 3V, IC=0 -0.1 uA hFE

1.39. ss8550_to-92.pdf Size:177K _lge

8550
8550
SS8550(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PC : 1 W (TA=25?) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current-Continuous -1.5 A Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Emitter cut-off current ICEO VCE=-20V, IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 uA hFE(1) VCE=-1V, IC=-100mA 85 400 DC cur

1.40. ss8550_sot-23.pdf Size:242K _lge

8550
8550
SS8550 SOT-23 Transistor(PNP) SOT-23 1. Base 2.Emitter 3.Collector Features Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 ?A hFE(1) VCE=-1V, IC

1.41. pxt8550.pdf Size:232K _lge

8550
8550
PXT8550 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 1.8 3. EMITTER 1.4 1.4 3 2.6 4.25 Features 2.4 3.75 Compliment to PXT8050 0.8 MIN 0.53 0.40 0.48 0.44 2x) MARKING: Y2 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100?A, IC=0 -5 V Collector cut-off current ICBO VCB= -40 V,

1.42. m8550_to-92.pdf Size:189K _lge

8550
8550
M8550(PNP) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -800 mA Dimensions in inches and (millimeters) PC Collector Power Dissipation 625 mW TJ Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO* IC= -0.1mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100?A, IC=0 -6 V Collector cut-off current ICBO VCB= -35V , IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20V , IB=0 -0.1 ?A hFE(1) VCE=-1V, IC=-5mA 45 DC current gain hFE(2) VCE=-1V, IC=-100mA 8

1.43. s8550_sot-23.pdf Size:217K _lge

8550
8550
S8550 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8050 Collector current: IC=0.5A MARKING : 2TY Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC = -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100?A, IC=0 Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 ?A Emitter cut-off current IE

1.44. ss8550.pdf Size:166K _wietron

8550
8550
SS8550 Plastic-Encapsulate Transistors TO-92 PNP Silicon COLLECTOR 3 2 BASE 1 1. EMITTER 2 3 1 2. BASE EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol SS8550 Unit Collector-Emitter Voltage V CEO -25 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -1.5 Adc Total Device Dissipation T =25 C PD W A 1.0 Junction Temperature T 150 j C -55 to +150 Storage Temperature Tstg C DEVICE MARKING SS8550=SS8550D ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (1) (IC= -0.1 mAdc, IB=0) V(BR)CEO -25 Vdc - V(BR)CBO -40 Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Vdc - Vdc V(BR)EBO -5.0 Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) - -0.1 ICBO uAdc Collector Cutoff Current (V = -40 Vdc, IE=0 Vdc) CB - IEBO Emitter Cutoff Current(VEB = -5 Vdc, IC =0 Vdc) uAdc -0.1 < <2.0% 1. Pulse Test: Pulse Width 300 us, Duty C

1.45. ss8550w.pdf Size:264K _wietron

8550
8550
SS8550W PNP Plastic-Encapsulate Transistor 3 P b Lead(Pb)-Free 1 2 MAXIMUM RATINGS (TA=25? unless otherwise noted) 1. BASE Symbol Parameter Value Units 2. EMITTER 3. COLLECTOR V(BR)CBO Collector- Base Voltage -40 V ICM Collector Current -1.5 A SOT-323(SC-70) . PCM Power Dissipation (Tamb=25°C) W 0.2 TJ Junction Temperature -55 to +150 ? Tstg Storage Temperature -55 to +150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Sy mbol Test conditions MIN MAX UNIT -40 V Collector-base breakdown voltage V(BR)CBO Ic= -100 ?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100 ?A, IC=0 Collector cut-off current ICBO VCB= -40 V , IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20 V , IB=0 -0.1 ?A , Emitter cut-off current IEBO VEB= -5V IC=0 -0.1 ?A hFE (1) VCE= -1V, IC= -100mA 120 350 DC current gain hFE (2) VCE= -1V, IC= -800mA 40 Collector-emitter s

1.46. m8550lt1.pdf Size:429K _wietron

8550
8550
M8550LT1 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 800 300 2.4 417 0.1 25 100 40 5.0 100 0.15 u 35 u 4.0 0.15 WEITRON 1/4 15-Jul-10 http://www.weitron.com.tw M8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - (IC=100 mAdc, VCE=1.0 Vdc) hFE (1) 600 100 Collector-Emitter Saturation Voltage VCE(sat) - 0.5 Vdc (IC=800 mAdc, IB=80mAdc) CLASSIFICATION OF h FE(1) P Rank Q R S 100-200 150-300 200-400 300-600 Range Marking 85P 1YD 1YF 1YH WEITRON 2/4 15-Jul-10 http://www.weitron.com.tw M8550LT1 WEITRON 3/4 15-Jul-10 http://www.weitron.com.tw M8550LT1 SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 D G G 1.70 2.10 E H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L 0.30 0.61 L M J M 0.076 0.25 WEITRO

1.47. ss8550lt1.pdf Size:165K _wietron

8550
8550
SS8550LT1 PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 Value VCEO -25 -40 -5.0 -1500 300 2.4 417 -0.1 -25 -40 -100 -5.0 -100 -0.15 u -40 -0.15 u -5.0 WEITRON 27-Jul-2012 1/2 http://www.weitron.com.tw SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - (IC=-100 mAdc, VCE=1.0 Vdc) hFE 600 100 Collector-Emitter Saturation Voltage VCE(sat) - Vdc -0.5 (IC=-800 mAdc, IB=-80mAdc) CLASSIFICATION OF h FE P Rank Q R S Range 100-200 150-300 200-400 300-600 Marking 1HB 1HD 1HF 1HH SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 D G G 1.70 2.10 E H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L 0.30 0.61 L M J M 0.076 0.25 WEITRON 27-Jul-2012 2/2 http://www.weitron.com.tw

1.48. s8550.pdf Size:1656K _wietron

8550
8550
S8550 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. E MIT T E R 1 2 2. B A SE 3 3. COL L E CTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-E m itter Voltage V CE O -2 5 Vdc Collector-B as e Voltage VCB O -4 0 Vdc E m itter-B as e VOltage VE B O -5 . 0 Vdc Collector Current IC -5 0 0 mAdc P 0 . 6 2 5 Total Device Dis s ipation T =2 5 C W A D Junction Tem perature T 1 5 0 j C S torage, Tem perature Ts tg C -5 5 to +1 5 0 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-E mitter B reakdown Voltage (IC= -0 . 1 mAdc, IB =0 ) V(B R )CE O -2 5 Vdc - Collector-B as e B reakdown Voltage (IC= -1 0 0 µAdc, IE =0 ) V(B R )CB O -4 0 Vdc - Vdc V(B R )E B O -5 . 0 E m itter-B as e B reakdown Voltage (IE = -1 0 0 µAdc, IC=0 ) uAdc ICE 0 Collector Cutoff Current (V = -2 0 Vdc, I =0 ) - -0 . 2 CE B - ICB O uAdc -0 . 1 Collector Cutoff Current (V = -4 0 Vdc, IE =0 ) CB - IE B O E m itte

1.49. 8550slt1.pdf Size:500K _willas

8550
8550
FM120-M WILLAS 8550SLT1THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers SOT-23 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to TRANSISTOR ptimize board space. (PNP) o 0.146(3.7) • Low power loss, high efficiency. FEATURES 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. 1. BASE • Guardring for overvoltage protection. 0.071(1.8) 2. EMITTER • Ultra high-speed switching. 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. 3. COLLECTOR Collector current: ICs meet environmental standards of =0.5A • Lead-free part MIL-STD-19500 /228 • RoHS product for packing code suffix "G" MARKING : Halogen free pr

1.50. 8550hxlt1.pdf Size:490K _willas

8550
8550
FM120-M 8550HXLT1 WILLAS THRU FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. PNP Silicon 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. FEATURE • Gu High current capacity in compact package. ardring for overvoltage protection. 0.071(1.8) • Ultra high-speed switching. IC =1.5A. 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. Epitaxial planar type. • Lead-free parts meet environmental standards of PNP complement: 8550H MIL-STD-19500 /228 We declare that the material of product compliance with RoHS requi

1.51. 8550plt1_8550qlt1_8550rlt1.pdf Size:412K _willas

8550
8550
FM120-M WILLAS 8550xLT1 THRU General Purpose BARRIER RECTIFIERS -20V- 200V Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. PNP Silicon 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. FEATUREent capability, low forward voltage drop. • High curr • High surge capability. We declare that the material of product compliance with RoHS requirements. • Guardring for overvoltage protection. 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" DEVICE MARKING AND ORDERING INFORMATION Halogen fre

1.52. ha8550.pdf Size:52K _hsmc

8550
8550
Spec. No. : HE6108 HI-SINCERITY Issued Date : 1997.09.05 Revised Date : 2004.11.23 MICROELECTRONICS CORP. Page No. : 1/5 HA8550 PNP EPITAXIAL PLANAR TRANSISTOR Description The HA8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. Features TO-92 • High total power dissipation (PT: 2W, TC=25°C) • High collector current (IC: 1.5A) • Complementary to HA8050 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...................................................................................................................... 1 W Total Power Dissi

1.53. ha8550s.pdf Size:55K _hsmc

8550
8550
Spec. No. : HE6109 HI-SINCERITY Issued Date : 1997.09.05 Revised Date : 2005.01.20 MICROELECTRONICS CORP. Page No. : 1/5 HA8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features • High DC Current Gain (hFE=100~500 at IC=150mA) • Complementary to HA8050S Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ....................

1.54. hmbt8550.pdf Size:39K _hsmc

8550
8550
Spec. No. : HE6813 HI-SINCERITY Issued Date : 1997.08.11 Revised Date : 2004.08.17 MICROELECTRONICS CORP. Page No. : 1/4 HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current: hFE=150-400 at IC=150mA • Complementary to HMBT8050 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ................................

1.55. he8550.pdf Size:46K _hsmc

8550
8550
Spec. No. : HE6114 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2006.07.28 MICROELECTRONICS CORP. Page No. : 1/4 HE8550 PNP Epitaxial Planar Transistor Description The HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature..................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ........................................................................................................................................ 1 W • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ...................

1.56. he8550s.pdf Size:55K _hsmc

8550
8550
Spec. No. : HE6129 HI-SINCERITY Issued Date : 1993.01.15 Revised Date : 2004.07.26 MICROELECTRONICS CORP. Page No. : 1/5 HE8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8550S is designed for general purpose amplifier applications. Features TO-92 • High DC Current gain: 100-500 at IC=150mA • Complementary to HE8050S Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .........................

1.57. btp8550n3.pdf Size:259K _cystek

8550
8550
Spec. No. : C313N3-H Issued Date : 2003.09.26 CYStech Electronics Corp. Revised Date :2009.02.02 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CESAT BTP8550N3 Features • Low VCE(SAT), -0.22V(typically) at IC=-500mA/IB=-50mA. • Complementary to BTN8050N3. • Pb-free package Symbol Outline BTP8550N3 SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Collector Current IC -1 A Power Dissipation Pd 225 mW Thermal Resistance, Junction to Ambient RθJA 556 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTP8550N3 CYStek Product Specification Spec. No. : C313N3-H Issued Date : 2003.09.26 CYStech Electronics Corp. Revised Date :2009.02.02 Page No. : 2/6 Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BV -30 - - V I

1.58. btp8550ba3.pdf Size:247K _cystek

8550
8550
Spec. No. : C313A3-B Issued Date : 2004.03.04 CYStech Electronics Corp. Revised Date : 2009.02.02 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTP8550BA3 Description The BTP8550BA3 is designed for use in 2W output amplifier of portable radios in class B push pull operation. Features • Large collector current , IC= -1.5A • Low VCE(sat) • Complementary to BTN8050BA3 • Pb-free & Halogen-free package Symbol Outline BTP8550BA3 TO-92 B:Base C:Collector E:Emitter E B C Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1.5 A Base Current IB -0.5 A Total Power Dissipation(TA=25°C) Pd 1 W Total Power Dissipation(TC=25°C) Pd 2 W Thermal Resistance, junction to ambient RθJA 125 °C/W Thermal Resistance, junction to case RθJC 62.5 °C/W Junction Temperature Tj 150 °C

1.59. btp8550a3.pdf Size:163K _cystek

8550
8550
Spec. No. : C313A3 Issued Date : 2003.07.30 CYStech Electronics Corp. Revised Date : 2007.04.19 Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistor BTP8550A3 Description The BTP8550A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features • Large collector current , IC= -1.5A • Low VCE(sat) • Complementary to BTN8050A3 • Pb-free package Symbol Outline BTP8550A3 TO-92 B:Base C:Collector E:Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1.5 A Base Current IB -0.5 A Power Dissipation Pd 625 mW Thermal Resistance, Junction to Ambient RθJA 200 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTP8550A3 CYStek Product Specification Spec. No. : C313A3 Issued Date : 2003.07.30 CYStec

See also transistors datasheet: 74T2 , 7NU73 , 7NU74 , 8003BBA , 8003BBB , 8050 , 80DA020D , 810BLY-A , S9014 , 9003 , 9010 , 9011 , 9011D , 9011E , 9011F , 9011G , 9011H .

Keywords

 8550 Datasheet  8550 Datenblatt  8550 RoHS  8550 Distributor
 8550 Application Notes  8550 Component  8550 Circuit  8550 Schematic
 8550 Equivalent  8550 Cross Reference  8550 Data Sheet  8550 Fiche Technique

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