All Transistors Datasheet



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9011
  9011
  9011
 
9011
  9011
  9011
 
9011
  9011
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU826A
BU902 .. BUP23CF
BUP30 .. BUV90A
BUV90F .. BUY13
BUY13S .. CC338-40
CC5401 .. CFD1408
CFD1499 .. CK22C
CK25 .. CP100
CP1016 .. CSA1220O
CSA1220R .. CSC1674
CSC1674O .. CSD600K
CSD600KD .. D16P2
D16P3 .. D40DU4
D40DU5 .. D45VM2
D45VM3 .. DP350T05
DP500 .. DTA143T
DTA143TCA .. DTC314TV
DTC343TA .. ECG12
ECG123 .. ECG473
ECG474 .. ESM283
ESM2894 .. FCS9015C
FCS9016 .. FJX945
FJX945 .. FMMT597
FMMT6076 .. FV3502
FV3503 .. GC512K
GC515 .. GES5400R
GES5401 .. GMO656A
GP140 .. GT330G
GT330I .. HBDM60V600W
HBF422 .. HPT1012
HPT1210 .. IDD1407
IDD1408 .. JE9092
JE9092A .. KN4L3Z
KN4L4K .. KRA760E
KRA760F .. KRC831F
KRC831U .. KSB1017-O
KSB1017-R .. KSC2785-G
KSC2785-L .. KSD5041-P
KSD5041-Q .. KST56
KST63 .. KT3189V-9
KT3189V9 .. KT6128E
KT6128G .. KT8145A
KT8145B .. KT888A
KT888B .. KTB1151
KTB1234T .. KTD1937
KTD2058 .. MBT3904DW
MBT3904DW1 .. MJ10014
MJ10015 .. MJD32C
MJD32C-1 .. MJE5656
MJE5657 .. MM8002
MM8003 .. MMBT5551R
MMBT5551W .. MP10A
MP10B .. MP4965
MP500 .. MPS2906
MPS2906A .. MPSD02
MPSD03 .. MRF835
MRF840 .. NA11FH
NA11FI .. NB013EU
NB013EV .. NB212EI
NB212EJ .. NKT106
NKT107 .. NPS5131
NPS5132 .. NTE126A
NTE127 .. OC78D
OC78N .. PBSS4620PA
PBSS4630PA .. PH5416
PHD13003C .. PN706
PN706A .. RCA1001
RCA120 .. RN1507
RN1508 .. RN2705
RN2705JE .. S1381
S1382 .. SDM5011
SDM5012 .. SGSIF341
SGSIF343 .. SRA2211
SRA2211E .. STC4250F
STC4250L .. SYL1986
SYL2245 .. TA2333
TA2359A .. TIP127F
TIP127FP .. TIPP32A
TIPP32B .. TN3904
TN3904R .. TP708
TP750 .. UMX18N
UMX1N .. UN9214
UN9215Q .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
9011 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

9011 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 9011

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 18

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 3.5

Forward current transfer ratio (hFE), min: 28

Noise Figure, dB: -

Package of 9011 transistor: TO92

9011 Equivalent Transistors - Cross-Reference Search

9011 PDF doc:

1.1. mmbr901lt1_mps901_mrf901_mrf9011lt1.pdf Size:267K _motorola

9011
9011
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR901LT1/D The RF Line MMBR901LT1, T3 NPN Silicon MPS901 MRF901 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. • High Current–Gain — Bandwidth Product IC = 30 mA SURFACE MOUNTED • Low Noise Figure @ f = 1.0 GHz — HIGH–FREQUENCY NF(matched) = 1.8 dB (Typ) (MRF9011LT1) TRANSISTOR NF(matched) = 1.9 dB (Typ) (MMBR901LT1, T3) NPN SILICON • High Power Gain — Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1) Gpe(matched) = 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3) • Guaranteed RF Parameters (MRF9011LT1) • Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance Lower Package Parasitics High Gain CASE 318–08, STYLE 6 • Available in tape and reel packaging options: SOT–23 T1 suffix = 3,000 units per reel LOW PROFILE, MMBR901LT1, T3 T

1.2. ss9011.pdf Size:38K _fairchild_semi

9011
9011
SS9011 AM Converter, AM/FM IF Amplifier General Purpose Transistor TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 30 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 100µA, IE =0 50 V BVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 30 V BVEBO Emitter-Base Breakdown Voltage IE = 100µA, IC =0 5 V ICBO Collector Cut-off Current VCB = 50V, IE =0 100 nA IEBO Emitter Cut-off Current VEB = 5V, IC =0 100 nA hFE DC Current Gain VCE = 5V, IC = 1mA 28 90 198 VCE (sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1

1.3. ss9011.pdf Size:50K _samsung

9011
9011
SS9011 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER,AM/FM IF AMPLIFIER TO-92 GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 Collector Current IC 30 mw Collector Dissipation PC 400 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC = 100 , IE =0 50 V Collector-Emitter Breakdown Voltage BVCEO IC =1mA, IB =0 30 V Emitter-Base Breakdown Voltage BVEBO IE = 100 , IC =0 V 5 Collector Cut-off Current ICBO VCB = 50V, IE =0 100 nA Emitter Cut-off Current IEBO VEB = 5V, IC =0 100 nA DC Current Gain hFE VCE = 5V, IC = 1mA 28 90 198 Collector-Emitter Saturation Voltage VCE (sat) IC = 10mA, IB = 1mA 0.08 0.3 V VBE VCE = 5V, IC = 1mA Base-Emit

1.4. cd9011.pdf Size:169K _cdil

9011
9011
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9011 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 30 V Collector -Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Power Dissipation PD 400 mW Operating And Storage Junction Tj, Tstg -55 to +125 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Emitter Voltage VCEO IC=10mA, IB=0 30 - - V Collector -Base Voltage VCBO IC=100uA, IE=0 50 - - V Emitter Base Voltage VEBO IE=10uA, IC=0 5.0 - - V Collector Cut off Current ICBO VCB=18V, IE=0 - - 50 nA Emitter Cut off Current IEBO VEB=3V, IC=0 - - 100 nA DC Current Gain hFE IC=1mA,VCE=5V 29 - 273 Collector Emitter Saturation Voltage VCE(Sat) IC=10mA,IB=1mA - - 0.30 V Dynamic Characteristics Output Capacitance Cob V

1.5. ktc9011.pdf Size:26K _kec

9011
9011
SEMICONDUCTOR KTC9011 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B C FEATURE High Power Gain : Gpe=29dB(Typ.) at f=10.7MHz. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO Collector-Base Voltage 35 V H 0.45 _ H J 14.00 + 0.50 VCEO K 0.55 MAX Collector-Emitter Voltage 30 V F F L 2.30 M 0.45 MAX VEBO Emitter-Base Voltage 5 V N 1.00 1 2 3 IC Collector Current 50 mA 1. EMITTER IE Emitter Current -50 mA 2. BASE 3. COLLECTOR PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 TO-92 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 0.1 A IEBO VEB=4V, IC=0 Emitter Cut-off Current - - 0.1 A hFE (Note) VCE=5V, IC=1mA DC Current

1.6. ktc9011s.pdf Size:400K _kec

9011
9011
SEMICONDUCTOR KTC9011S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E L B L FEATURE DIM MILLIMETERS High Power Gain : Gpe=29dB(Typ.) at f=10.7MHz. _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 ~ 0.10 CHARACTERISTIC SYMBOL RATING UNIT L 0.55 P P M 0.20 MIN VCBO Collector-Base Voltage 35 V N 1.00+0.20/-0.10 P 7 VCEO Collector-Emitter Voltage 30 V M VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA 1. EMITTER 2. BASE IE Emitter Current -50 mA 3. COLLECTOR PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 SOT-23 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=

See also transistors datasheet: 8003BBA , 8003BBB , 8050 , 80DA020D , 810BLY-A , 8550 , 9003 , 9010 , 2N3906 , 9011D , 9011E , 9011F , 9011G , 9011H , 9011I , 9012 , 9012D .

Keywords

 9011 Datasheet  9011 Datenblatt  9011 RoHS  9011 Distributor
 9011 Application Notes  9011 Component  9011 Circuit  9011 Schematic
 9011 Equivalent  9011 Cross Reference  9011 Data Sheet  9011 Fiche Technique

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