All Transistors Datasheet



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9011
  9011
  9011
 
9011
  9011
  9011
 
9011
  9011
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU433
BU4508AF .. BUL50B
BUL510 .. BUV18X
BUV19 .. BUX62
BUX63 .. C5T4997
C5T5400 .. CDQ10053
CDQ10054 .. CIL769
CIL771 .. CMMT495
CMMT551 .. CS718A
CS720A .. CSB772E
CSB772P .. CSD1047OF
CSD1047YF .. CZD1952
CZD2983 .. D38L4
D38L4-6 .. D44TD3
D44TD4 .. DC5441
DC5442 .. DTA114YCA
DTA114YE .. DTC124XCA
DTC124XE .. DW7039
DW7050 .. ECG324
ECG325 .. ERS275
ERS301 .. F121
F121A .. FJP3305
FJP3307D .. FMMT4250
FMMT4250A .. FT2384
FT2551 .. FZTA14
FZTA42 .. GES3962
GES4058 .. GFT25R
GFT31 .. GT250/8C
GT250/8D .. HA7207
HA7501 .. HMBTH10
HMJE13001 .. HUN2237
HUN2238 .. JC501P
JC501Q .. KDY24
KDY25 .. KRA721E
KRA721F .. KRC651U
KRC652E .. KSA1625L
KSA1625M .. KSC2334-Y
KSC2335 .. KSD1588-O
KSD1588-R .. KSR1011
KSR1012 .. KT3140V
KT3142A .. KT603D
KT603E .. KT8110V
KT8112A .. KT838B
KT839A .. KTA1517
KTA1517S .. KTC5001L
KTC5027 .. MA0491
MA0492 .. ME8002
ME8003 .. MJ480
MJ481 .. MJE3312
MJE3370 .. MM3725
MM3726 .. MMBT4141
MMBT4142 .. MMUN2113LT1
MMUN2113LT2 .. MP3638
MP3638A .. MPQ4888
MPQ4889 .. MPS6602
MPS6651 .. MRF243
MRF244 .. MUN5311DW
MUN5311DW1 .. NA42WG
NA42WH .. NB121F
NB121FH .. NB312Z
NB313E .. NPS3564
NPS3565 .. NSS12100UW
NSS12100XV6T1G .. OC410
OC41N .. PBSS301ND
PBSS301NX .. PDTC144VU
PDTC144WE .. PN3725
PN3742 .. PZT195A
PZT2222A .. RN1113CT
RN1113FS .. RN2118MFV
RN2119MFV .. RS-2013
RS1049 .. SCE540
SCH2202 .. SFT317
SFT319 .. SQ2222A
SQ2222AF .. ST5771-2
ST6008 .. SUR539J
SUR540EF .. T2580
T2588 .. TI459
TI460 .. TIP642
TIP645 .. TN2907
TN2907A .. TP3827
TP3866 .. UMB1N
UMB2N .. UN6113
UN6114 .. ZDT694
ZDT749 .. ZTX321M
ZTX322 .. ZXTN2010A
ZXTN2010G .. ZXTPS720MC
 
9011 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

9011 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 9011

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 18

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 3.5

Forward current transfer ratio (hFE), min: 28

Noise Figure, dB: -

Package of 9011 transistor: TO92

9011 Equivalent Transistors - Cross-Reference Search

9011 PDF doc:

1.1. mmbr901lt1_mps901_mrf901_mrf9011lt1.pdf Size:267K _motorola

9011
9011
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR901LT1/D The RF Line MMBR901LT1, T3 NPN Silicon MPS901 MRF901 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. • High Current–Gain — Bandwidth Product IC = 30 mA SURFACE MOUNTED • Low Noise Figure @ f = 1.0 GHz — HIGH–FREQUENCY NF(matched) = 1.8 dB (Typ) (MRF9011LT1) TRANSISTOR NF(matched) = 1.9 dB (Typ) (MMBR901LT1, T3) NPN SILICON • High Power Gain — Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1) Gpe(matched) = 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3) • Guaranteed RF Parameters (MRF9011LT1) • Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance Lower Package Parasitics High Gain CASE 318–08, STYLE 6 • Available in tape and reel packaging options: SOT–23 T1 suffix = 3,000 units per reel LOW PROFILE, MMBR901LT1, T3 T

1.2. ss9011.pdf Size:38K _fairchild_semi

9011
9011
SS9011 AM Converter, AM/FM IF Amplifier General Purpose Transistor TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 30 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 100µA, IE =0 50 V BVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 30 V BVEBO Emitter-Base Breakdown Voltage IE = 100µA, IC =0 5 V ICBO Collector Cut-off Current VCB = 50V, IE =0 100 nA IEBO Emitter Cut-off Current VEB = 5V, IC =0 100 nA hFE DC Current Gain VCE = 5V, IC = 1mA 28 90 198 VCE (sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1

1.3. ss9011.pdf Size:50K _samsung

9011
9011
SS9011 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER,AM/FM IF AMPLIFIER TO-92 GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 Collector Current IC 30 mw Collector Dissipation PC 400 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC = 100 , IE =0 50 V Collector-Emitter Breakdown Voltage BVCEO IC =1mA, IB =0 30 V Emitter-Base Breakdown Voltage BVEBO IE = 100 , IC =0 V 5 Collector Cut-off Current ICBO VCB = 50V, IE =0 100 nA Emitter Cut-off Current IEBO VEB = 5V, IC =0 100 nA DC Current Gain hFE VCE = 5V, IC = 1mA 28 90 198 Collector-Emitter Saturation Voltage VCE (sat) IC = 10mA, IB = 1mA 0.08 0.3 V VBE VCE = 5V, IC = 1mA Base-Emit

1.4. cd9011.pdf Size:169K _cdil

9011
9011
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9011 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 30 V Collector -Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Power Dissipation PD 400 mW Operating And Storage Junction Tj, Tstg -55 to +125 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Emitter Voltage VCEO IC=10mA, IB=0 30 - - V Collector -Base Voltage VCBO IC=100uA, IE=0 50 - - V Emitter Base Voltage VEBO IE=10uA, IC=0 5.0 - - V Collector Cut off Current ICBO VCB=18V, IE=0 - - 50 nA Emitter Cut off Current IEBO VEB=3V, IC=0 - - 100 nA DC Current Gain hFE IC=1mA,VCE=5V 29 - 273 Collector Emitter Saturation Voltage VCE(Sat) IC=10mA,IB=1mA - - 0.30 V Dynamic Characteristics Output Capacitance Cob V

1.5. ktc9011s.pdf Size:400K _kec

9011
9011
SEMICONDUCTOR KTC9011S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E L B L FEATURE DIM MILLIMETERS High Power Gain : Gpe=29dB(Typ.) at f=10.7MHz. _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 ~ 0.10 CHARACTERISTIC SYMBOL RATING UNIT L 0.55 P P M 0.20 MIN VCBO Collector-Base Voltage 35 V N 1.00+0.20/-0.10 P 7 VCEO Collector-Emitter Voltage 30 V M VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA 1. EMITTER 2. BASE IE Emitter Current -50 mA 3. COLLECTOR PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 SOT-23 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=

1.6. ktc9011.pdf Size:26K _kec

9011
9011
SEMICONDUCTOR KTC9011 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B C FEATURE High Power Gain : Gpe=29dB(Typ.) at f=10.7MHz. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO Collector-Base Voltage 35 V H 0.45 _ H J 14.00 + 0.50 VCEO K 0.55 MAX Collector-Emitter Voltage 30 V F F L 2.30 M 0.45 MAX VEBO Emitter-Base Voltage 5 V N 1.00 1 2 3 IC Collector Current 50 mA 1. EMITTER IE Emitter Current -50 mA 2. BASE 3. COLLECTOR PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 TO-92 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 0.1 A IEBO VEB=4V, IC=0 Emitter Cut-off Current - - 0.1 A hFE (Note) VCE=5V, IC=1mA DC Current

See also transistors datasheet: 8003BBA , 8003BBB , 8050 , 80DA020D , 810BLY-A , 8550 , 9003 , 9010 , 2N3906 , 9011D , 9011E , 9011F , 9011G , 9011H , 9011I , 9012 , 9012D .

Keywords

 9011 Datasheet  9011 Datenblatt  9011 RoHS  9011 Distributor
 9011 Application Notes  9011 Component  9011 Circuit  9011 Schematic
 9011 Equivalent  9011 Cross Reference  9011 Data Sheet  9011 Fiche Technique

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