All Transistors Datasheet



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9011
  9011
  9011
 
9011
  9011
  9011
 
9011
  9011
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS3035
HEPS3047 .. HSE131
HSE133 .. IMX2
IMX3 .. K2107
K2107A .. KRA161F
KRA163F .. KRC117
KRC117M .. KRC868E
KRC868U .. KSB772-R
KSB772-Y .. KSC5020-R
KSC5020-Y .. KSE13004
KSE13005 .. KT210B
KT210V .. KT347B
KT347V .. KT644G
KT644V .. KT817G9
KT817V .. KT916B
KT918A .. KTC3103A1
KTC3103B1 .. KTX311T
KTX312T .. MD1131F
MD1132 .. MJ14002
MJ14003 .. MJE13003HT
MJE13003HV .. MJF18008
MJF2955 .. MMBT1015
MMBT123S .. MMBTA56L
MMBTA56LT1 .. MP1550A
MP1551 .. MP800
MP801 .. MPS3866
MPS3900 .. MPSW55
MPSW56 .. MT3002
MT3011 .. NA21ZX
NA21ZY .. NB021FZ
NB021H .. NB213YY
NB213Z .. NKT242L
NKT243 .. NR431DF
NR431DG .. NTE2542
NTE2543 .. P217A
P217B .. PDTA114YT
PDTA114YU .. PMD1702K
PMD1703K .. PTB20030
PTB20031 .. RCA8766D
RCA8766E .. RN1908FE
RN1908FS .. RN2962FE
RN2962FS .. S629T
S630T .. SE8520
SE8521 .. SM3174
SM3176 .. SRC1206UF
SRC1207 .. STD826
STD830CP40 .. T1344
T1346 .. TBF869
TBF870 .. TIP32F
TIP33 .. TIX620
TIX621 .. TN5143
TN5172 .. TR21
TR236 .. UN1224
UN1518 .. UPT211
UPT212 .. ZTX107CL
ZTX107CM .. ZTX549
ZTX550 .. ZXTPS720MC
 
9011 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

9011 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 9011

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.31

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 18

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 3.5

Forward current transfer ratio (hFE), min: 28

Noise Figure, dB: -

Package of 9011 transistor: TO92

9011 Equivalent Transistors - Cross-Reference Search

9011 PDF doc:

1.1. mmbr901lt1_mps901_mrf901_mrf9011lt1.pdf Size:267K _motorola

9011
9011
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR901LT1/D The RF Line MMBR901LT1, T3 NPN Silicon MPS901 MRF901 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. • High Current–Gain — Bandwidth Product IC = 30 mA SURFACE MOUNTED • Low Noise Figure @ f = 1.0 GHz — HIGH–FREQUENCY NF(matched) = 1.8 dB (Typ) (MRF9011LT1) TRANSISTOR NF(matched) = 1.9 dB (Typ) (MMBR901LT1, T3) NPN SILICON • High Power Gain — Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1) Gpe(matched) = 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3) • Guaranteed RF Parameters (MRF9011LT1) • Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance Lower Package Parasitics High Gain CASE 318–08, STYLE 6 • Available in tape and reel packaging options: SOT–23 T1 suffix = 3,000 units per reel LOW PROFILE, MMBR901LT1, T3 T

1.2. ss9011.pdf Size:38K _fairchild_semi

9011
9011
SS9011 AM Converter, AM/FM IF Amplifier General Purpose Transistor TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 30 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 100µA, IE =0 50 V BVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 30 V BVEBO Emitter-Base Breakdown Voltage IE = 100µA, IC =0 5 V ICBO Collector Cut-off Current VCB = 50V, IE =0 100 nA IEBO Emitter Cut-off Current VEB = 5V, IC =0 100 nA hFE DC Current Gain VCE = 5V, IC = 1mA 28 90 198 VCE (sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1

1.3. ss9011.pdf Size:50K _samsung

9011
9011
SS9011 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER,AM/FM IF AMPLIFIER TO-92 GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 Collector Current IC 30 mw Collector Dissipation PC 400 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC = 100 , IE =0 50 V Collector-Emitter Breakdown Voltage BVCEO IC =1mA, IB =0 30 V Emitter-Base Breakdown Voltage BVEBO IE = 100 , IC =0 V 5 Collector Cut-off Current ICBO VCB = 50V, IE =0 100 nA Emitter Cut-off Current IEBO VEB = 5V, IC =0 100 nA DC Current Gain hFE VCE = 5V, IC = 1mA 28 90 198 Collector-Emitter Saturation Voltage VCE (sat) IC = 10mA, IB = 1mA 0.08 0.3 V VBE VCE = 5V, IC = 1mA Base-Emit

1.4. cd9011.pdf Size:169K _cdil

9011
9011
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9011 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 30 V Collector -Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Power Dissipation PD 400 mW Operating And Storage Junction Tj, Tstg -55 to +125 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Emitter Voltage VCEO IC=10mA, IB=0 30 - - V Collector -Base Voltage VCBO IC=100uA, IE=0 50 - - V Emitter Base Voltage VEBO IE=10uA, IC=0 5.0 - - V Collector Cut off Current ICBO VCB=18V, IE=0 - - 50 nA Emitter Cut off Current IEBO VEB=3V, IC=0 - - 100 nA DC Current Gain hFE IC=1mA,VCE=5V 29 - 273 Collector Emitter Saturation Voltage VCE(Sat) IC=10mA,IB=1mA - - 0.30 V Dynamic Characteristics Output Capacitance Cob V

1.5. ktc9011s.pdf Size:400K _kec

9011
9011
SEMICONDUCTOR KTC9011S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E L B L FEATURE DIM MILLIMETERS High Power Gain : Gpe=29dB(Typ.) at f=10.7MHz. _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 ~ 0.10 CHARACTERISTIC SYMBOL RATING UNIT L 0.55 P P M 0.20 MIN VCBO Collector-Base Voltage 35 V N 1.00+0.20/-0.10 P 7 VCEO Collector-Emitter Voltage 30 V M VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA 1. EMITTER 2. BASE IE Emitter Current -50 mA 3. COLLECTOR PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 SOT-23 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=

1.6. ktc9011.pdf Size:26K _kec

9011
9011
SEMICONDUCTOR KTC9011 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. B C FEATURE High Power Gain : Gpe=29dB(Typ.) at f=10.7MHz. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO Collector-Base Voltage 35 V H 0.45 _ H J 14.00 + 0.50 VCEO K 0.55 MAX Collector-Emitter Voltage 30 V F F L 2.30 M 0.45 MAX VEBO Emitter-Base Voltage 5 V N 1.00 1 2 3 IC Collector Current 50 mA 1. EMITTER IE Emitter Current -50 mA 2. BASE 3. COLLECTOR PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 TO-92 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 0.1 A IEBO VEB=4V, IC=0 Emitter Cut-off Current - - 0.1 A hFE (Note) VCE=5V, IC=1mA DC Current

See also transistors datasheet: 8003BBA , 8003BBB , 8050 , 80DA020D , 810BLY-A , 8550 , 9003 , 9010 , 2N3906 , 9011D , 9011E , 9011F , 9011G , 9011H , 9011I , 9012 , 9012D .

Keywords

 9011 Datasheet  9011 Datenblatt  9011 RoHS  9011 Distributor
 9011 Application Notes  9011 Component  9011 Circuit  9011 Schematic
 9011 Equivalent  9011 Cross Reference  9011 Data Sheet  9011 Fiche Technique

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