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9012 Transistor (IC) Datasheet. Cross Reference Search. 9012 Equivalent

Type Designator: 9012

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.4

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.4

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 3.5

Forward current transfer ratio (hFE), min: 64

Noise Figure, dB: -

Package of 9012 transistor: TO92

9012 Transistor Equivalent Substitute - Cross-Reference Search

9012 PDF:

1.1. ss9012.pdf Size:35K _fairchild_semi

9012
9012

SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collecto

1.2. ss9012.pdf Size:46K _samsung

9012
9012

SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS TO-92 B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCE

1.3. 9012.pdf Size:97K _utc

9012
9012

UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. (625mW) *High collector current. (-500mA) 1 *Excellent hFE linearity *Complementary to UTC 9013 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT

1.4. mmbt9012.pdf Size:98K _utc

9012
9012

UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. (625mW) 1 *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 3 MARKING 12 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )

1.5. sts9012.pdf Size:106K _auk

9012
9012

STS9012 Semiconductor Semiconductor PNP Silicon Transistor Description • General purpose application. • Switching application. Features • Excellent hFE linearity. • Complementary pair with STS9013 Ordering Information Type NO. Marking Package Code STS9012 STS9012 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ

1.6. s9012t.pdf Size:89K _secos

9012
9012

S9012T PNP Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURE Power dissipation PCM : 0.625 W Tamb=25 Collector current ICM: -0.5 A 0.43+0.08 –0.07 46+0.1 0. –0.1 Collector-base voltage V(BR)CBO : -40 V (1.27 Typ.) 1: Emitter Operating and storage junction temperature range +0.2 1.25

1.7. s9012.pdf Size:233K _secos

9012
9012

S9012 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector Dim Min Max 3 3 A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 C 0.890 1.110 2 Base PCM : 0.3 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM : - 0.5 A A Emitter H 0.013 0.100 L Collector-base volt

1.8. cmbt9012.pdf Size:131K _cdil

9012
9012

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9012 PIN CONFIGURATION (PNP) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 35 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V Coll

1.9. cd9012.pdf Size:165K _cdil

9012
9012

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CD9012 TO-92 CBE General Purpose Audio Amplifier Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 30 V Collector -Base Voltage VCBO 40 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 500 mA Collector Power Di

1.10. ktc9012.pdf Size:46K _kec

9012
9012

SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity. ·Complementary to KTC9013. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25?) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO -40 V Co

1.11. ktc9012s.pdf Size:395K _kec

9012
9012

SEMICONDUCTOR KTC9012S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity. _ A 2.93 0.20 + B 1.30+0.20/-0.15 Complementary to KTC9013S. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 MAXIMUM RATING (Ta=25 ) L 0.55 P P

1.12. 2sa9012.pdf Size:74K _usha

9012
9012

Transistors 2SA9012

1.13. s9012.pdf Size:768K _htsemi

9012
9012

S901 2 SOT-23 TRANSISTOR(PNP) FEATURES 1. BASE Complementary to S9013 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Po

1.14. s9012.pdf Size:240K _gsme

9012
9012

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9012 FEATURES ¦FEATURES ?? FEATURES Excellent HFE Linearity HFE ?????? hFE(2)=25(Min.) at VCE=6V,Ic=400mA. Complementary to GM9013 ? GM9013 ?? MAXIMUM RATINGS (Ta=25 ) ¦MAXIMUM RATINGS ?????(Ta=25?) MAXIMUM RATINGS (Ta=25 ) Character

1.15. s9012_sot-23.pdf Size:212K _lge

9012
9012

S9012 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MARKING: 2T1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector

1.16. s9012_to-92.pdf Size:245K _lge

9012
9012

S9012(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Curre

1.17. s9012.pdf Size:1633K _wietron

9012
9012

S9012 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -25 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5 Vdc Collector Current IC -500 mAdc PCM Total Device Dissipation T =25 C 0.625 W A Junction Temperature T 150

1.18. s9012lt1.pdf Size:238K _wietron

9012
9012

S9012LT1 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO -20 -40 -5 -500 300 2.4 417 S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R S9012SLT1=12S -0.1 -20 -100 -40 -5.0 -100 u -0.15 -35 -0.15 u -4.0 WEITRON 1/2 28-Apr-2011 http://www.weitron.com.tw S9012LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics

1.19. bta9012a3.pdf Size:319K _cystek

9012
9012

Spec. No. : C305A3 Issued Date : 2014.02.17 CYStech Electronics Corp. Revised Date : 2014.03.11 Page No. : 1/8 General Purpose PNP Epitaxial Planar Transistor BTA9012A3 Description • The BTA9012A3 is designed for using in driver stage of AF amplifier and general purpose amplification. • Large IC , IC Max .= -0.6A • Low VCE(sat), typically -0.09V at IC/IB = -100mA / -10

1.20. s9012_sot-23.pdf Size:275K _can-sheng

9012
9012

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) FEATURES Complimentary to S9013 Collector current:Ic=0.5A MARKING:2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单

1.21. 9012m.pdf Size:943K _blue-rocket-elect

9012
9012

9012M(BR3CG9012M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features P 、I 大,h 特性极好,与 9013M(BR3DG9013M)互补。 C C FE High PC and IC, Excellent hFE linearity, complementary pair with 9013M(BR3DG9013M). 用途 / Applications 用于收音机推挽功

1.22. l9012qlt1g.pdf Size:80K _lrc

9012
9012

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S-L9012PLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

1.23. l9012slt1g.pdf Size:79K _lrc

9012
9012

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9012PLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

1.24. l9012plt1g.pdf Size:82K _lrc

9012
9012

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S-L9012PLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

1.25. l9012rlt1g.pdf Size:79K _lrc

9012
9012

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9012PLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

1.26. ftc9012s.pdf Size:96K _first_silicon

9012
9012

SEMICONDUCTOR FTC9012S TECHNICAL DATA X General Purpose Transistors PNP Silicon FEATURE 3 We declare that the material of product compliance with RoHS requirements. 2 ORDERING INFORMATION 1 Device Package Shipping SOT-23 FTC9012SX SOT– 23 FTC9012SX 10000/Tape&Reel SOT-23 3 COLLECTOR 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 2

1.27. kst9012c.pdf Size:137K _kexin

9012
9012

SMD Type Transistors SMD Type IC SMD Type PNP Transistors KST9012C SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Excellent hFE liearity Collector Current :IC=-0.5A 12 +0.05 0.95+0.1 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Voltag

1.28. kst9012.pdf Size:925K _kexin

9012
9012

SMD Type or SMD Type TransistICs SMD Type PNP Transistors KST9012 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Excellent hFE liearity Collector Current :IC=-0.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Volta

1.29. s9012.pdf Size:579K _shenzhen-tuofeng-semi

9012
9012

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9012 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURE Power dissipation 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: -0.5 A 1 2 3 Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150

1.30. s9012lt1.pdf Size:371K _shenzhen-tuofeng-semi

9012
9012

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 1. BASE S9012LT1 TRANSISTOR (PNP) 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25℃) 1. 3 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range Unit: mm TJ, Tst

See also transistors datasheet: 9010 , 9011 , 9011D , 9011E , 9011F , 9011G , 9011H , 9011I , MJE13003 , 9012D , 9012E , 9012F , 9012G , 9012H , 9013 , 9013D , 9013E .

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