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9012
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  9012
 
9012
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9012
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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BU104
BU104D .. BU921ZP
BU921ZPFI .. BUP49
BUP50 .. BUW131
BUW131A .. BUY30
BUY32-100 .. CCS2008GF
CCS2053 .. CG040D
CG040E .. CK477
CK4A .. CP500
CP501 .. CSA1316GR
CSA1357 .. CSC1740
CSC1740S .. CSD786Q
CSD786R .. D26E1
D26E2 .. D40N2
D40N3 .. D60T4040
D60T4050 .. DSL12AW
DSS20200L .. DTA143ZE
DTA143ZEA .. DTD123YK
DTD143E .. ECG16
ECG160 .. ECG52
ECG53 .. ESM4007
ESM400A .. FCX1051A
FCX1053A .. FJY4004R
FJY4005R .. FMMT918R
FMMT929 .. FX3502
FX3503 .. GD110
GD114 .. GES5818
GES5819 .. GS111B
GS111C .. GT376A
GT383A .. HE9015
HEP637 .. HS5819
HS5820 .. IDI8003
IDI8004 .. JE9112A
JE9112B .. KRA105M
KRA105S .. KRA769E
KRA769U .. KRC841E
KRC841T .. KSB1116A-Y
KSB1116S .. KSC2883-O
KSC2883-Y .. KSD5076
KSD5078 .. KSY82
KT104A .. KT325BM
KT325V .. KT617A
KT618A .. KT8154A
KT8154B .. KT903B
KT904A .. KTB688B
KTB764 .. KTD8303A9
KTD863 .. MCH3105
MCH3106 .. MJ10100
MJ10101 .. MJD44H11-1
MJD44H11T4 .. MJE5982
MJE5983 .. MMBC1009F1
MMBC1009F2 .. MMBT6428
MMBT6428L .. MP115
MP116 .. MP5130
MP5131 .. MPS3391
MPS3391A .. MPSH24
MPSH30 .. MRF947AT3
MRF947BT1 .. NA12FG
NA12FH .. NB013HU
NB013HV .. NB212XH
NB212XI .. NKT13429
NKT135 .. NPS5449
NPS5550 .. NTE22
NTE226 .. OC822
OC823 .. PBSS5320T
PBSS5320X .. PMBT2369
PMBT2907 .. PRF949
PRF957 .. RCA1A18
RCA1A19 .. RN1701JE
RN1702 .. RN2901FS
RN2902 .. S17900
S1805 .. SDT9305
SDT9306 .. SJ5439
SJE1349 .. SRA2219S
SRA2219SF .. STC5608
STC5648 .. SZD4672
SZD5103 .. TA2514
TA2551 .. TIP146
TIP146F .. TIS53
TIS54 .. TN4142
TN4143 .. TPC6602
TPC6603 .. UN1115S
UN1116Q .. UN921M
UNR1110 .. ZT61
ZT62 .. ZTX453
ZTX454 .. ZXTPS718MC
ZXTPS720MC .. ZXTPS720MC
 
9012 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

9012 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 9012

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.4

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.4

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 3.5

Forward current transfer ratio (hFE), min: 64

Noise Figure, dB: -

Package of 9012 transistor: TO92

9012 Equivalent Transistors - Cross-Reference Search

9012 PDF doc:

1.1. ss9012.pdf Size:35K _fairchild_semi

9012
9012
SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = -100A, IE =0 -40 V BVCEO Collector-Emitter Breakdown Voltage IC = -1mA, IB =0 -20 V BVEBO Emitter-Base Breakdown Voltage IE = -100A, IC =0 -5 V ICBO Collector Cut-off Current VCB = -25V, IE =0 -100 nA IEB

1.2. ss9012.pdf Size:46K _samsung

9012
9012
SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS TO-92 B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 mA Collector Current IC -500 mW Collector Dissipation PC 625 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC = -100 , IE =0 -40 V Collector-Emitter Breakdown Voltage BVCEO IC = -1mA, IB =0 -20 V Emitter-Base Breakdown Voltage BVEBO IE = -100 , IC =0 V -5 Collector Cut-off Current ICBO VCB = -25V, IE =0 -100 nA Emitter Cut-off Current IEBO VEB = -3V, IC =0 -100

1.3. mmbt9012.pdf Size:98K _utc

9012
9012
UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. (625mW) 1 *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 3 MARKING 12 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current Ic -500 mA Collector dissipation Pc 225 mW Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-base breakdown voltage BVCBO Ic=-100µA,IE=0 -40 V Collector-emitter breakdown voltage BVCEO Ic=-1mA,IB=0 -20 V Emitter-base breakdown voltage BVEBO IE=-100µA, Ic=0 -5 V Collector cutoff

1.4. 9012.pdf Size:97K _utc

9012
9012
UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. (625mW) *High collector current. (-500mA) 1 *Excellent hFE linearity *Complementary to UTC 9013 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current Ic -500 mA Collector dissipation Pc 625 mW Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-base breakdown voltage BVCBO Ic=-100µA,IE=0 -40 V Collector-emitter breakdown voltage BVCEO Ic=-1mA,IB=0 -20 V Emitter-base breakdown voltage BVEBO IE=-100µA, Ic=0 -5 V Collector cutoff current ICBO VCB=-25V,IE=0 -100

1.5. sts9012.pdf Size:106K _auk

9012
9012
STS9012 Semiconductor Semiconductor PNP Silicon Transistor Description • General purpose application. • Switching application. Features • Excellent hFE linearity. • Complementary pair with STS9013 Ordering Information Type NO. Marking Package Code STS9012 STS9012 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector KST-9015-000 1 4.5 ± 0.1 14.0 ± 0.40 0.38 1.20 ± 0.1 STS9012 Absolute maximum ratings (Ta=25° °C) ° ° Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector current IC -500 mA Emitter current IE 500 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25° °C) ° ° Characteristic Symbol Test Condition Min. Typ. Max. Unit

1.6. s9012t.pdf Size:89K _secos

9012
9012
S9012T PNP Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURE Power dissipation PCM : 0.625 W Tamb=25 Collector current ICM: -0.5 A 0.43+0.08 –0.07 46+0.1 0. –0.1 Collector-base voltage V(BR)CBO : -40 V (1.27 Typ.) 1: Emitter Operating and storage junction temperature range +0.2 1.25–0.2 2: Base 1 2 3 Tj, Tstg: -55 to +150 3: Collector 2.54±0.1 ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100 A IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100 A IC=0 -5 V Collector cut-off current ICBO VCB=- 40V , IE=0 -0.1 A Collector cut-off current ICBO VCB=-20V , IE=0 -0.1 A Emitter cut-off current IEBO VEB=- 5V, IC=0 -0.1 A hFE(1) VCE=-1V, IC=-50mA 64 300 DC current g

1.7. s9012.pdf Size:233K _secos

9012
9012
S9012 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector Dim Min Max 3 3 A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 C 0.890 1.110 2 Base PCM : 0.3 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM : - 0.5 A A Emitter H 0.013 0.100 L Collector-base voltage J 0.085 0.177 3 V(BR)CBO : - 40 V K 0.450 0.600 S Top View B Operating & storage junction temperature 1 2 L 0.890 1.020 O O Tj, Tstg : - 55 C ~ + 150 C S 2.100 2.500 V G V 0.450 0.600 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V V (BR)CBO Ic= -100?A, I =0 -40 E Collector-emitter breakdown voltage V Ic= -1mA, I =0 -25 V (BR)CEO B Emitter-base breakdown voltage V - 5 V (BR)EBO I = -100?A, I =0 E C Collector cut-off curren

1.8. cd9012.pdf Size:165K _cdil

9012
9012
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CD9012 TO-92 CBE General Purpose Audio Amplifier Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 30 V Collector -Base Voltage VCBO 40 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 500 mA Collector Power Dissipation PC 625 mW Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Emitter Voltage VCEO IC=1mA, IB=0 30 - - V Collector -Base Voltage VCBO IC=100uA, IE=0 40 - - V Emitter Base Voltage VEBO IE=100uA, IC=0 5.0 - - V Collector Cut off Current ICBO VCB=25V, IE=0 - - 100 nA Emitter Cut off Current IEBO VEB=3V, IC=0 - - 100 nA DC Current Gain hFE IC=50mA,VCE=1V * 64 - 465 IC=500mA,VCE=1V 40 Collector Emitter Saturation Voltage VCE(

1.9. cmbt9012.pdf Size:131K _cdil

9012
9012
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9012 PIN CONFIGURATION (PNP) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 35 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 500 mA Collector Dissipation PC 250 mW Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Base Voltage VCBO IC=100uA, IE=0 35 - - V Collector -Emitter Voltage VCEO IC=1mA, IB=0 30 - - V Emitter Base Voltage VEBO IE=100uA, IC=0 5.0 - - V Collector Cut off Current ICBO VCB=25V, IE=0 - - 100 nA Emitter Cut off Current IEBO VEB=3V, IC=0 - - 500 nA DC Current Gain hFE IC=50mA,VCE=1V * 118 - 305 IC=300mA,VCE

1.10. ktc9012s.pdf Size:395K _kec

9012
9012
SEMICONDUCTOR KTC9012S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity. _ A 2.93 0.20 + B 1.30+0.20/-0.15 Complementary to KTC9013S. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 MAXIMUM RATING (Ta=25 ) L 0.55 P P M 0.20 MIN CHARACTERISTIC SYMBOL RATING UNIT N 1.00+0.20/-0.10 P 7 VCBO -40 V Collector-Base Voltage M VCEO -30 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V 1. EMITTER IC Collector Current -500 mA 2. BASE 3. COLLECTOR IE Emitter Current 500 mA PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 SOT-23 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BB ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-35

1.11. ktc9012.pdf Size:46K _kec

9012
9012
SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity. ·Complementary to KTC9013. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25?) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO -40 V Collector-Base Voltage K 0.55 MAX F F L 2.30 VCEO -30 V Collector-Emitter Voltage M 0.45 MAX N 1.00 1 2 3 VEBO Emitter-Base Voltage -5 V 1. EMITTER IC Collector Current -500 mA 2. BASE 3. COLLECTOR IE Emitter Current 500 mA 625 PC* Collector Power Dissipation mW 400 TO-92 Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-35V, IE=0 Collector Cut-off Current - - -0.1 ? A IEBO VEB=-5V, IC=0 Emitt

1.12. 2sa9012.pdf Size:74K _usha

9012
9012
Transistors 2SA9012

1.13. s9012.pdf Size:768K _htsemi

9012
9012
S901 2 SOT-23 TRANSISTOR(PNP) FEATURES 1. BASE Complementary to S9013 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC= -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100?A, IC=0 Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 ?A DC current gain hF

1.14. s9012.pdf Size:240K _gsme

9012
9012
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9012 FEATURES ¦FEATURES ?? FEATURES Excellent HFE Linearity HFE ?????? hFE(2)=25(Min.) at VCE=6V,Ic=400mA. Complementary to GM9013 ? GM9013 ?? MAXIMUM RATINGS (Ta=25 ) ¦MAXIMUM RATINGS ?????(Ta=25?) MAXIMUM RATINGS (Ta=25 ) Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Base voltage VCBO -40 Vdc ???-???? -Collector-Emitter Voltage VCEO -30 Vdc ???-????? Emitter-Base voltage VEBO -5.0 Vdc ???-???? Collector Current-Continuous Ic -500 mAdc ?????-?? Base-Current IB -50 mAdc ???? Collector Power Dissipation PC 300 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM9012=2T1 ? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Stron

1.15. s9012_sot-23.pdf Size:212K _lge

9012
9012
S9012 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MARKING: 2T1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC= -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 ?A Emitter cut-off current IEBO

1.16. s9012_to-92.pdf Size:245K _lge

9012
9012
S9012(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA,IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100?A, IC=0 Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB= -5

1.17. s9012lt1.pdf Size:238K _wietron

9012
9012
S9012LT1 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO -20 -40 -5 -500 300 2.4 417 S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R S9012SLT1=12S -0.1 -20 -100 -40 -5.0 -100 u -0.15 -35 -0.15 u -4.0 WEITRON 1/2 28-Apr-2011 http://www.weitron.com.tw S9012LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain hFE 100 600 - (IC=-50 mAdc, VCE=-1.0 Vdc) Collector-Emitter Saturation Voltage VCE(sat) - Vdc -0.6 (IC=-500 mAdc, IB=-50mAdc) CLASSIFICATION OF h FE Rank P Q R S Range 100-200 150-300 200-400 300-600 SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 D E 0.46 1.00 G E G 1.70 2.10 H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L L 0.30 0.61 J M M 0.076 0.25 WEITRON 2/2 28-Apr-2011 http://www.weitron.com.tw

1.18. s9012.pdf Size:1633K _wietron

9012
9012
S9012 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -25 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5 Vdc Collector Current IC -500 mAdc PCM Total Device Dissipation T =25 C 0.625 W A Junction Temperature T 150 j C -55 to +150 Storage, Temperature Tstg C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) V(BR)CEO -25 Vdc - Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO -40 Vdc - Vdc V(BR)EBO -5 Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) uAdc ICE0 Collector Cutoff Current (V = -20 Vdc, I =0) - -0.1 CE B - ICBO uAdc -0.1 Collector Cutoff Current (V = -40 Vdc, IE=0) CB - IEBO Emitter Cutoff Current (VEB= -5.0V c, I =0) -0.1 uAdc d C WEITRON http://www.weitron.com.tw S9012 W

1.19. bta9012a3.pdf Size:319K _cystek

9012
9012
Spec. No. : C305A3 Issued Date : 2014.02.17 CYStech Electronics Corp. Revised Date : 2014.03.11 Page No. : 1/8 General Purpose PNP Epitaxial Planar Transistor BTA9012A3 Description • The BTA9012A3 is designed for using in driver stage of AF amplifier and general purpose amplification. • Large IC , IC Max .= -0.6A • Low VCE(sat), typically -0.09V at IC/IB = -100mA / -10mA. Ideal for low-voltage operation • Pb-free lead plating and halogen-free package. Symbol Outline BTA9012A3 TO-92 B:Base C:Collector E:Emitter E B C Ordering Information Device Package Shipping TO-92 BTA9012A3-0-TB-G 2000 pcs / Tape & Box (Pb-free lead plating and halogen-free package) TO-92 1000 pcs/ bag, 10 bags/box, BTA9012A3-0-BK-G (Pb-free lead plating and halogen-free package) 10boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB :2000 pcs/tape & box; BK:

See also transistors datasheet: 9010 , 9011 , 9011D , 9011E , 9011F , 9011G , 9011H , 9011I , MJE13003 , 9012D , 9012E , 9012F , 9012G , 9012H , 9013 , 9013D , 9013E .

Keywords

 9012 Datasheet  9012 Datenblatt  9012 RoHS  9012 Distributor
 9012 Application Notes  9012 Component  9012 Circuit  9012 Schematic
 9012 Equivalent  9012 Cross Reference  9012 Data Sheet  9012 Fiche Technique

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