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9013
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List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
9013 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

9013 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 9013

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.4

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.4

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 3.5

Forward current transfer ratio (hFE), min: 64

Noise Figure, dB: -

Package of 9013 transistor: TO92

9013 Equivalent Transistors - Cross-Reference Search

9013 PDF doc:

1.1. rfm12u7x_090130.pdf Size:175K _toshiba

9013
9013
RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Output power: PO = 12 W (typ.) Gain: GP = 10.8 dB (typ.) Drain efficiency: ?D = 60% (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 10 V Drain current ID 4 A PW-X Power dissipation PD* 20 W JEDEC ? Channel temperature Tch 150 C JEITA ? Storage temperature range Tstg -45 to 150 C TOSHIBA 2-5N1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/vol

1.2. rfm00u7u_090130.pdf Size:163K _toshiba

9013
9013
RFM00U7U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM00U7U VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Output power: PO = 200 mW (typ.) Gain: GP = 10.8 dB (typ.) Drain efficiency: ?D = 50% (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 10 V Drain current ID 0.1 A USQ Power dissipation PD (Note 1) 0.25 W Channel temperature Tch 150 C JEDEC ? Storage temperature range Tstg -45 to 150 C JEITA ? TOSHIBA 2-2K1D Note: Using continuously under heavy loads (e.g. the application of high temperatur

1.3. rfm01u7p_090130.pdf Size:161K _toshiba

9013
9013
RFM01U7P TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM01U7P VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Output power: PO = 1.2 W (typ.) Gain: GP = 10.8 dB (typ.) Drain efficiency: ?D = 65% (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 10 V PW-Mini Drain current ID 1 A JEDEC ? Power dissipation PD (Note 1) 3 W Channel temperature Tch 150 C JEITA SC-62 Storage temperature range Tstg -45 to 150 C TOSHIBA 2-5K1D Weight: 0.05 g (typ.) Note: Using continuously under heavy loads (e.g. the applicatio

1.4. ss9013.pdf Size:40K _fairchild_semi

9013
9013
SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC =100A, IE =0 40 V BVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 20 V BVEBO Emitter-Base Breakdown Voltage IE =100A, IC =0 5 V ICBO Collector Cut-off Current VCB =25V, IE =0 100 nA IEBO Emitter Cut-off

1.5. ss9013.pdf Size:53K _samsung

9013
9013
SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 mA Collector Current IC 500 mW Collector Dissipation PC 625 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC =100 , IE =0 40 V Collector-Emitter Breakdown Voltage BVCEO IC =1mA, IB =0 20 V Emitter-Base Breakdown Voltage BVEBO IE =100 , IC =0 V 5 Collector Cut-off Current ICBO VCB =25V, IE =0 100 nA Emitter Cut-off Current IEBO VEB =3V, IC =0 100 nA DC Current Gain

1.6. 9013.pdf Size:88K _utc

9013
9013
UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1 FEATURES * High total power dissipation. (625mW) * High collector current. (500mA) * Excellent hFE linearity. TO-92 * Complementary to UTC 9012 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 9013-x-T92-B 9013L-x-T92-B 9013G-x-T92-B TO-92 E B C Tape Box 9013-x-T92-K 9013L-x-T92-K 9013G-x-T92-K TO-92 E B C Bulk 9013-x-T92-R 9013L-x-T92-R 9013G-x-T92-R TO-92 E B C Tape Reel Note: xx: Output Voltage, refer to Marking Information. www.unisonic.com.tw 1 of 2 Copyright © 2011 Unisonic Technologies Co., LTD QW-R201-030.Ba 9013 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25?, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Co

1.7. mmbt9013.pdf Size:144K _utc

9013
9013
UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total Power Dissipation. (625mW) *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 MMBT9013-x-AE3-R MMBT9013L-x-AE3-R MMBT9013G-x-AE3-R SOT-23 E B C Tape Reel MARKING www.unisonic.com.tw 1 of 3 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R206-021.C MMBT9013 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Collector Dissipation PC 225 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta=25°

1.8. sts9013.pdf Size:197K _auk

9013
9013
STS9013 NPN Silicon Transistor Descriptions PIN Connection • General purpose application. C • Switching application. B Features • Excellent hFE linearity. E • Complementary pair with STS9012 TO-92 Ordering Information Type NO. Marking Package Code STS9013 STS9013 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 40 V Collector-Emitter voltage VCEO 30 V Emitter-Base voltage VEBO 5 V Collector current IC 500 mA Emitter current IE -500 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB=35, IE=0 - - 0.1 ?A Emitter cut-off current IEBO VEB=5V, IC=0 - - 0.1 ?A DC current gain hFE* VCE=1V, IC=50mA 96 - 246 - Collector-Emitter saturation voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V Base-Emitt

1.9. s9013.pdf Size:343K _secos

9013
9013

1.10. s9013w.pdf Size:54K _secos

9013
9013
S9013W 0.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 High Collector Current Excellent HFE Linearity A L 3 3 CLASSIFICATION OF hFE Top View C B 1 1 2 Product-Rank S9013W-L S9013W-H S9013W-J 2 K E Range 120~200 200~350 300~400 D Marking Code J3 H J F G Millimeter Millimeter PACKAGE INFORMATION Collector REF. REF. Min. Max. Min. Max. 3 A 1.80 2.20 G 0.100 REF. Package MPQ Leader Size B 1.80 2.45 H 0.525 REF. 1 C 1.15 1.35 J 0.08 0.25 SOT-323 3K 7 inch Base D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage V 5 V EBO Collector Current - Continuous I 500 mA C Collector Power Dissipati

1.11. s9013t.pdf Size:95K _secos

9013
9013
S9013T NPN Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURE Power dissipation P CM : 0.625 W Tamb=25 C Collector current CM: 0.5 A I 0.43+0.08 –0.07 Collector-base voltage 46+0.1 0. –0.1 V(BR)CBO : 40 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter +0.2 1.25–0.2 2: Base 1 2 3 stg: Tj, T -55 to +150 C 3: Collector 2.54±0.1 ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 A IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100 A IC=0 5 V Collector cut-off current ICBO VCB= 40V , IE=0 0.1 A Collector cut-off current ICEO VCE=20V , IE=0 0.1 A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A hFE(1) VCE=1V, IC=50mA 64 300 DC current gain h

1.12. 9013.pdf Size:76K _wingshing

9013
9013
NPN SILICON TRANSISTOR 9013 TO 92 FEATURES 1.EMITTER ? ? ? ? ? ? ? ? ? ? ? Power dissipation ?????? 2.BASE ? ? PCM : 0.625 W Tamb=25 3.COLLECTOR Collector current ??????? ? ? ? ICM : 0.5 A 1 2 3 Collector-base voltage ???--?????? V(BR)CBO : 45 V ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified ? ? ? ???? ? ? ? ? ? ? ? ? ? ???? ? ? ? ? ? ? ? ? ? ???? ? ? ? ? ? ? ? ? ? ???? ? ? ? ? ? ? Parameter Symbol Test conditions MIN TYP MAX UNIT ? ? ? ? ? ? ? ? ??? ??? ??? ?? ? ? ? ? ? ? Collector-base breakdown voltage V(BR)CBO 45 V Ic= 100 A IE=0 ? ? ? - - ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA IB=0 25 V ? ? ? - - ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? Emitter-base breakdown voltage V(BR)EBO 5 V IE= 100 A IC=0 ? ? ? - - ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? Collector cut-of

1.13. cmbt9013.pdf Size:131K _cdil

9013
9013
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT 9013 PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 35 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 500 mA Collector Dissipation PC 250 mW Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Base Voltage VCBO IC=100uA, IE=0 35 - - V Collector -Emitter Voltage VCEO IC=1mA, IB=0 30 - - V Emitter Base Voltage VEBO IE=100uA, IC=0 5.0 - - V Collector Cut off Current ICBO VCB=25V, IE=0 - - 100 nA Emitter Cut off Current IEBO VEB=3V, IC=0 - - 500 nA DC Current Gain hFE IC=50mA,VCE=1V * 118 - 305 IC=300mA,VCE

1.14. cd9013.pdf Size:94K _cdil

9013
9013
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9013 TO-92 Plastic Package C B E General Purpose Audio Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C Unless Otherwise Specified) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 30 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous 500 mA PC Collector Power Dissipation 625 mW Operating And Storage Junction Tj, Tstg -55 to +150 ?C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS VCEO IC=1mA, IB=0 Collector Emitter Voltage 30 V VCBO IC=100µA, IE=0 Collector Base Voltage 40 V VEBO IE=100µA, IC=0 Emitter Base Voltage 5 V ICBO VCB=25V, IE = 0 Collector Cut off Current 100 nA IEBO VBE=3V, IC = 0 Emitter Cut off Current 100 nA *hFE VCE=1V, IC=50mA DC Current Gain 64 465 hFE VCE=1V, I

1.15. ktc9013.pdf Size:46K _kec

9013
9013
SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity. ·Complementary to KTC9012. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25?) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO Collector-Base Voltage 40 V K 0.55 MAX F F L 2.30 VCEO Collector-Emitter Voltage 30 V M 0.45 MAX N 1.00 1 2 3 VEBO Emitter-Base Voltage 5 V 1. EMITTER IC Collector Current 500 mA 2. BASE 3. COLLECTOR IE Emitter Current -500 mA 625 PC* Collector Power Dissipation mW 400 TO-92 Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 0.1 ? A IEBO VEB=5V, IC=0 Emitter Cut

1.16. ktc9013s.pdf Size:395K _kec

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9013
SEMICONDUCTOR KTC9013S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity. _ A 2.93 0.20 + B 1.30+0.20/-0.15 Complementary to KTC9012S. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 MAXIMUM RATING (Ta=25 ) L 0.55 P P M 0.20 MIN CHARACTERISTIC SYMBOL RATING UNIT N 1.00+0.20/-0.10 P 7 VCBO Collector-Base Voltage 40 V M VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V 1. EMITTER IC Collector Current 500 mA 2. BASE 3. COLLECTOR IE Emitter Current -500 mA PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 SOT-23 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, I

1.17. s9013.pdf Size:587K _htsemi

9013
9013
S901 3 TRANSISTOR(NPN) SOT-23 FEATURES 1. BASE Complementary to S9012 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 40 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO 25 V IC= 0.1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 ?A Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Collector cut-off current ICEO VCE=20V, IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 hFE(1) VCE=1V, IC= 50mA 120 400

1.18. s9013w.pdf Size:431K _htsemi

9013
9013
S901 3W TRANSISTOR(NPN) SOT–323 FEATURES ? High Collector Current ? Excellent HFE Linearity MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO 2. EMITTER V Collector-Emitter Voltage 25 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA P Collector Power Dissipation 200 mW C R Thermal Resistance From Junction To Ambient 625 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100µA, I =0 40 V (BR)CBO C E Collector-emitter breakdown voltage V I =1mA, I =0 25 V (BR)CEO C B Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current I V =40V, I =0 100 nA CBO CB E Collector cut-off current I V =20V, I =0 100 nA CEO CE B Emitter cut-off cu

1.19. s9013.pdf Size:240K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9013 FEATURES ¦FEATURES ?? FEATURES Excellent HFE Linearity HFE ?????? hFE(2)=25(Min.) at VCE=6V,Ic=400mA. Complementary to GM9012 ? GM9012 ?? MAXIMUM RATINGS (Ta=25 ) ¦MAXIMUM RATINGS ?????(Ta=25?) MAXIMUM RATINGS (Ta=25 ) Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Base voltage VCBO 40 Vdc ???-???? -Collector-Emitter Voltage VCEO 30 Vdc ???-????? Emitter-Base voltage VEBO 5.0 Vdc ???-???? Collector Current-Continuous Ic 500 mAdc ?????-?? Base-Current IB 50 mAdc ???? Collector Power Dissipation PC 300 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM9013=J3 ? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micr

1.20. s9013_to-92.pdf Size:158K _lge

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S9013 Transistor(NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 500 mA Dimensions in inches and (millimeters) PC Collector Dissipation 625 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A , IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A , IC=0 5 V ?A Collector cut-off current ICBO VCB= 40V , IE=0 0.1 ?A Collector cut-off current ICEO VCE=20V , IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 hFE(1) VCE=1V,

1.21. s9013_sot-23.pdf Size:167K _lge

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S9013 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 40 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO 25 V IC= 0.1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 ?A Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Collector cut-off current ICEO VCE=20V, IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 5

1.22. s9013lt1.pdf Size:125K _wietron

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S9013LT1 3 P b Lead(Pb)-Free 1 2 SOT-23 Value VCEO 20 40 5.0 500 S9013PLT1=13P S9013QLT1=13Q S9013RLT1=13R S9013SLT1=13S 0.1 20 40 100 100 u 0.15 35 0.15 u 4.0 1/2 28-Apr-2011 WEITRON http://www.weitron.com.tw S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain hFE 600 - 100 (IC=50 mAdc, VCE=1.0 Vdc) Collector-Emitter Saturation Voltage - Vdc VCE(sat) 0.6 (IC=500 mAdc, IB=50mAdc) CLASSIFICATION OF h FE Rank P Q R S Range 100-200 150-300 200-400 300-600 SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 D E 0.46 1.00 G E G 1.70 2.10 H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L L 0.30 0.61 J M M 0.076 0.25 WEITRON 2/2 28-Apr-2011 http://www.weitron.com.tw

1.23. 9013plt1_9013qlt1_9013rlt1_9013slt1.pdf Size:276K _willas

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FM120-M WILLAS THRU 9013xLT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product NPN Silicon Package outline Features • Batch process design, excellent power dissipation offers FEATURE better reverse leakage current and thermal resistance. SOD-123H We declare that the material of product compliance with RoHS requirements. • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. DEVICE MARKING AND ORDERING INFORMATION • Guardring for overvoltage protection. 0.071(1.8) SOT-23 • Ultra high-speed switching. Device Marking Shipping 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. 9013PLT1 3000/Tape&Reel • Lead-free parts mee13P t environmental standards of MIL-STD-19500

1.24. btc9013a3.pdf Size:319K _cystek

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Spec. No. : C203A3 Issued Date : 2014.02.17 CYStech Electronics Corp. Revised Date : 2014.02.24 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC9013A3 Description • The BTC9013A3 is designed for using in driver stage of AF amplifier and general purpose switching application. • High current , I = 0.6A C • Low V , V = 50mV(typ.) at I /I = 100mA/10mA, Optimal for low Voltage operation CE(sat) CE(sat) C B • Complementary to BTA9012A3. • Pb-free lead plating and halogen-free package Symbol Outline BTC9013A3 TO-92 B:Base C:Collector E:Emitter E B C Ordering Information Device Package Shipping TO-92 BTC9013A3-0-TB-G 2000 pcs / Tape & Box (Pb-free lead plating and halogen-free package) TO-92 1000 pcs/ bag, 10 bags/box, BTC9013A3-0-BK-G (Pb-free lead plating and halogen-free package) 10boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound p

1.25. s9013.pdf Size:256K _can-sheng

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TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES z FEATURES TO-92 Complementary to S9012 z Excellent hFE linearity 1.EMITTER MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS 2.BASE Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCBO VCBO VCBO 3.COLLECTOR 1 2 3 VCEO Collector-Emitter Voltage 25 V VCEO VCEO VCEO VEBO Emitter-Base Voltage 5 V VEBO VEBO VEBO IC Collector Current -Continuous 500 mA IC IC IC PC Collector Power Dissipation 625 mW PC PC PC Tj Junction Temperature 150 Tj Tj Tj ℃ Tstg Storage Temperature -55-150 Tstg Tstg Tstg ℃ ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise speci

1.26. s9013_sot-23.pdf Size:260K _can-sheng

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9013
 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURES Complimentary to S9012 Collector current:Ic=0.5A MARKING:J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Voltage (集电极-基极电压) 40 V VCEO Collector-Emitter Voltage (集电极-发射极电压) 25 V VEBO Emitter-Base Voltage (发射极-基极电压) 5 V IC Collector Current -Continuous (集电极电流) 0.5 A PC Collector Power Dissipation (耗散功率) 0.3 W Tj Junction Temperature (结温) 150 ℃ Tstg Storage Temperature (储存温度) -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT (参数名称) (符号) (测试条件) (

1.27. 9013m.pdf Size:817K _blue-rocket-elect

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9013M(3DG9013M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9012M(BR3CG9012M)互补。 C FE High PC and hFE, excellent hFE linearity, complementary pair with 9012M(BR3CG9012M). 用途 / Applications 用于收音机推挽功放。 Amplifier of portable radios in class B push-pull operation. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector 放大及印章代码 / hFE Classifications & Marking hFE Classifications D E F G H I Symbol hFE Range 64~91 78~112 96~135 112~166 144~202 188~276 Marking HJ3D HJ3E HJ3F HJ3G HJ3H HJ3I http://www.fsbrec.com 1 / 6 9013M(3DG9013M) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to

1.28. l9013rlt1g.pdf Size:151K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L9013PLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L9013PLT1G 13P 3000/Tape&Reel 3 S-L9013PLT1G L9013PLT3G 13P 10000/Tape&Reel S-L9013PLT3G 1 L9013QLT1G 13Q 3000/Tape&Reel S-L9013QLT1G 2 L9013QLT3G 13Q 10000/Tape&Reel S-L9013QLT3G SOT-23 (TO-236AB) L9013RLT1G 13R 3000/Tape&Reel S-L9013RLT1G L9013RLT3G 13R 10000/Tape&Reel S-L9013RLT3G L9013SLT1G 13S 3000/Tape&Reel 3 S-L9013SLT1G COLLECTOR L9013SLT3G 13S 10000/Tape&Reel S-L9013SLT3G 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 20 V EMITTER Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5V Collector curren

1.29. l9013qlt1g.pdf Size:151K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE L9013PLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L9013PLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L9013PLT1G 13P 3000/Tape&Reel 3 S-L9013PLT1G L9013PLT3G 13P 10000/Tape&Reel S-L9013PLT3G 1 L9013QLT1G 13Q 3000/Tape&Reel S-L9013QLT1G 2 L9013QLT3G 13Q 10000/Tape&Reel SOT-23 (TO-236AB) S-L9013QLT3G L9013RLT1G 13R 3000/Tape&Reel S-L9013RLT1G L9013RLT3G 13R 10000/Tape&Reel S-L9013RLT3G L9013SLT1G 13S 3000/Tape&Reel 3 S-L9013SLT1G COLLECTOR L9013SLT3G 13S 10000/Tape&Reel S-L9013SLT3G 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 20 V EMITTER Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5V Collector curre

1.30. l9013plt1g.pdf Size:155K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L9013PLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L9013PLT1G 13P 3000/Tape&Reel S-L9013PLT1G L9013PLT3G 3 13P 10000/Tape&Reel S-L9013PLT3G L9013QLT1G 13Q 3000/Tape&Reel S-L9013QLT1G 1 L9013QLT3G 13Q 10000/Tape&Reel 2 S-L9013QLT3G L9013RLT1G 13R 3000/Tape&Reel SOT-23 (TO-236AB) S-L9013RLT1G L9013RLT3G 13R 10000/Tape&Reel S-L9013RLT3G L9013SLT1G 13S 3000/Tape&Reel S-L9013SLT1G L9013SLT3G 3 13S 10000/Tape&Reel S-L9013SLT3G COLLECTOR MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 20 V 2 Collector-Base Voltage VCBO 40 V EMITTER Emitter-Base Voltage VEBO 5V Collector

1.31. l9013slt1g.pdf Size:153K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9013PLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L9013PLT1G 13P 3000/Tape&Reel S-L9013PLT1G 3 L9013PLT3G 13P 10000/Tape&Reel S-L9013PLT3G 1 L9013QLT1G 13Q 3000/Tape&Reel S-L9013QLT1G 2 L9013QLT3G 13Q 10000/Tape&Reel S-L9013QLT3G SOT-23 (TO-236AB) L9013RLT1G 13R 3000/Tape&Reel S-L9013RLT1G L9013RLT3G 13R 10000/Tape&Reel S-L9013RLT3G L9013SLT1G 13S 3000/Tape&Reel 3 S-L9013SLT1G COLLECTOR L9013SLT3G 13S 10000/Tape&Reel S-L9013SLT3G 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 20 V EMITTER Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5V Collector curr

1.32. s9013.pdf Size:407K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) TO-92 FEATURE Complementary to S9012 1. EMITTER Excellent hFE linearity 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA , IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA , IC=0 5 V μA Collector cut-off current ICBO VCB= 40V , IE=0 0.1 μA Collector cut-off current ICEO VCE=20V , IE=0 0

1.33. s9013lt1.pdf Size:359K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to S9012 Excellent hFE linearity MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 40 V IC= 100μA, IE=0 Collector-emitter breakdown voltage V(BR)CEO 25 V IC= 0.1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 5 V IE=100μA, IC=0 μA Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Collector cut-off cur

See also transistors datasheet: 9011H , 9011I , 9012 , 9012D , 9012E , 9012F , 9012G , 9012H , 2N2907 , 9013D , 9013E , 9013F , 9013G , 9013H , 9014 , 9014D , 9014E .

Keywords

 9013 Datasheet  9013 Datenblatt  9013 RoHS  9013 Distributor
 9013 Application Notes  9013 Component  9013 Circuit  9013 Schematic
 9013 Equivalent  9013 Cross Reference  9013 Data Sheet  9013 Fiche Technique

 

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