All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
9013
  9013
  9013
  9013
 
9013
  9013
  9013
  9013
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
9013 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

9013 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 9013

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.4

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.4

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 3.5

Forward current transfer ratio (hFE), min: 64

Noise Figure, dB: -

Package of 9013 transistor: TO92

9013 Equivalent Transistors - Cross-Reference Search

9013 PDF doc:

1.1. rfm00u7u_090130.pdf Size:163K _toshiba

9013
9013
RFM00U7U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM00U7U VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Output power: PO = 200 mW (typ.) Gain: GP = 10.8 dB (typ.) Drain efficiency: ?D = 50% (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 10 V Drain current ID 0.1 A USQ Power dissipation PD (Note 1) 0.25 W Channel temperature Tch 150 C JEDEC ? Storage temperature range Tstg -45 to 150 C JEITA ? TOSHIBA 2-2K1D Note: Using continuously under heavy loads (e.g. the application of high temperatur

1.2. rfm01u7p_090130.pdf Size:161K _toshiba

9013
9013
RFM01U7P TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM01U7P VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Output power: PO = 1.2 W (typ.) Gain: GP = 10.8 dB (typ.) Drain efficiency: ?D = 65% (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 10 V PW-Mini Drain current ID 1 A JEDEC ? Power dissipation PD (Note 1) 3 W Channel temperature Tch 150 C JEITA SC-62 Storage temperature range Tstg -45 to 150 C TOSHIBA 2-5K1D Weight: 0.05 g (typ.) Note: Using continuously under heavy loads (e.g. the applicatio

1.3. rfm12u7x_090130.pdf Size:175K _toshiba

9013
9013
RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Output power: PO = 12 W (typ.) Gain: GP = 10.8 dB (typ.) Drain efficiency: ?D = 60% (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 10 V Drain current ID 4 A PW-X Power dissipation PD* 20 W JEDEC ? Channel temperature Tch 150 C JEITA ? Storage temperature range Tstg -45 to 150 C TOSHIBA 2-5N1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/vol

1.4. ss9013.pdf Size:40K _fairchild_semi

9013
9013
SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC =100A, IE =0 40 V BVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 20 V BVEBO Emitter-Base Breakdown Voltage IE =100A, IC =0 5 V ICBO Collector Cut-off Current VCB =25V, IE =0 100 nA IEBO Emitter Cut-off

1.5. ss9013.pdf Size:53K _samsung

9013
9013
SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 mA Collector Current IC 500 mW Collector Dissipation PC 625 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC =100 , IE =0 40 V Collector-Emitter Breakdown Voltage BVCEO IC =1mA, IB =0 20 V Emitter-Base Breakdown Voltage BVEBO IE =100 , IC =0 V 5 Collector Cut-off Current ICBO VCB =25V, IE =0 100 nA Emitter Cut-off Current IEBO VEB =3V, IC =0 100 nA DC Current Gain

1.6. mmbt9013.pdf Size:144K _utc

9013
9013
UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total Power Dissipation. (625mW) *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 MMBT9013-x-AE3-R MMBT9013L-x-AE3-R MMBT9013G-x-AE3-R SOT-23 E B C Tape Reel MARKING www.unisonic.com.tw 1 of 3 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R206-021.C MMBT9013 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Collector Dissipation PC 225 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (Ta=25°

1.7. 9013.pdf Size:88K _utc

9013
9013
UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1 FEATURES * High total power dissipation. (625mW) * High collector current. (500mA) * Excellent hFE linearity. TO-92 * Complementary to UTC 9012 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 9013-x-T92-B 9013L-x-T92-B 9013G-x-T92-B TO-92 E B C Tape Box 9013-x-T92-K 9013L-x-T92-K 9013G-x-T92-K TO-92 E B C Bulk 9013-x-T92-R 9013L-x-T92-R 9013G-x-T92-R TO-92 E B C Tape Reel Note: xx: Output Voltage, refer to Marking Information. www.unisonic.com.tw 1 of 2 Copyright © 2011 Unisonic Technologies Co., LTD QW-R201-030.Ba 9013 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25?, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Co

1.8. sts9013.pdf Size:197K _auk

9013
9013
STS9013 NPN Silicon Transistor Descriptions PIN Connection • General purpose application. C • Switching application. B Features • Excellent hFE linearity. E • Complementary pair with STS9012 TO-92 Ordering Information Type NO. Marking Package Code STS9013 STS9013 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 40 V Collector-Emitter voltage VCEO 30 V Emitter-Base voltage VEBO 5 V Collector current IC 500 mA Emitter current IE -500 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB=35, IE=0 - - 0.1 ?A Emitter cut-off current IEBO VEB=5V, IC=0 - - 0.1 ?A DC current gain hFE* VCE=1V, IC=50mA 96 - 246 - Collector-Emitter saturation voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V Base-Emitt

1.9. s9013t.pdf Size:95K _secos

9013
9013
S9013T NPN Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURE Power dissipation P CM : 0.625 W Tamb=25 C Collector current CM: 0.5 A I 0.43+0.08 –0.07 Collector-base voltage 46+0.1 0. –0.1 V(BR)CBO : 40 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter +0.2 1.25–0.2 2: Base 1 2 3 stg: Tj, T -55 to +150 C 3: Collector 2.54±0.1 ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 A IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100 A IC=0 5 V Collector cut-off current ICBO VCB= 40V , IE=0 0.1 A Collector cut-off current ICEO VCE=20V , IE=0 0.1 A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A hFE(1) VCE=1V, IC=50mA 64 300 DC current gain h

1.10. s9013.pdf Size:343K _secos

9013
9013

1.11. s9013w.pdf Size:54K _secos

9013
9013
S9013W 0.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 High Collector Current Excellent HFE Linearity A L 3 3 CLASSIFICATION OF hFE Top View C B 1 1 2 Product-Rank S9013W-L S9013W-H S9013W-J 2 K E Range 120~200 200~350 300~400 D Marking Code J3 H J F G Millimeter Millimeter PACKAGE INFORMATION Collector REF. REF. Min. Max. Min. Max. 3 A 1.80 2.20 G 0.100 REF. Package MPQ Leader Size B 1.80 2.45 H 0.525 REF. 1 C 1.15 1.35 J 0.08 0.25 SOT-323 3K 7 inch Base D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage V 5 V EBO Collector Current - Continuous I 500 mA C Collector Power Dissipati

1.12. 9013.pdf Size:76K _wingshing

9013
9013
NPN SILICON TRANSISTOR 9013 TO 92 FEATURES 1.EMITTER ? ? ? ? ? ? ? ? ? ? ? Power dissipation ?????? 2.BASE ? ? PCM : 0.625 W Tamb=25 3.COLLECTOR Collector current ??????? ? ? ? ICM : 0.5 A 1 2 3 Collector-base voltage ???--?????? V(BR)CBO : 45 V ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified ? ? ? ???? ? ? ? ? ? ? ? ? ? ???? ? ? ? ? ? ? ? ? ? ???? ? ? ? ? ? ? ? ? ? ???? ? ? ? ? ? ? Parameter Symbol Test conditions MIN TYP MAX UNIT ? ? ? ? ? ? ? ? ??? ??? ??? ?? ? ? ? ? ? ? Collector-base breakdown voltage V(BR)CBO 45 V Ic= 100 A IE=0 ? ? ? - - ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA IB=0 25 V ? ? ? - - ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? Emitter-base breakdown voltage V(BR)EBO 5 V IE= 100 A IC=0 ? ? ? - - ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? Collector cut-of

1.13. cmbt9013.pdf Size:131K _cdil

9013
9013
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT 9013 PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 35 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 500 mA Collector Dissipation PC 250 mW Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Base Voltage VCBO IC=100uA, IE=0 35 - - V Collector -Emitter Voltage VCEO IC=1mA, IB=0 30 - - V Emitter Base Voltage VEBO IE=100uA, IC=0 5.0 - - V Collector Cut off Current ICBO VCB=25V, IE=0 - - 100 nA Emitter Cut off Current IEBO VEB=3V, IC=0 - - 500 nA DC Current Gain hFE IC=50mA,VCE=1V * 118 - 305 IC=300mA,VCE

1.14. cd9013.pdf Size:94K _cdil

9013
9013
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9013 TO-92 Plastic Package C B E General Purpose Audio Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C Unless Otherwise Specified) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 30 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous 500 mA PC Collector Power Dissipation 625 mW Operating And Storage Junction Tj, Tstg -55 to +150 ?C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS VCEO IC=1mA, IB=0 Collector Emitter Voltage 30 V VCBO IC=100µA, IE=0 Collector Base Voltage 40 V VEBO IE=100µA, IC=0 Emitter Base Voltage 5 V ICBO VCB=25V, IE = 0 Collector Cut off Current 100 nA IEBO VBE=3V, IC = 0 Emitter Cut off Current 100 nA *hFE VCE=1V, IC=50mA DC Current Gain 64 465 hFE VCE=1V, I

1.15. ktc9013s.pdf Size:395K _kec

9013
9013
SEMICONDUCTOR KTC9013S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity. _ A 2.93 0.20 + B 1.30+0.20/-0.15 Complementary to KTC9012S. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 MAXIMUM RATING (Ta=25 ) L 0.55 P P M 0.20 MIN CHARACTERISTIC SYMBOL RATING UNIT N 1.00+0.20/-0.10 P 7 VCBO Collector-Base Voltage 40 V M VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V 1. EMITTER IC Collector Current 500 mA 2. BASE 3. COLLECTOR IE Emitter Current -500 mA PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 SOT-23 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, I

1.16. ktc9013.pdf Size:46K _kec

9013
9013
SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity. ·Complementary to KTC9012. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25?) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO Collector-Base Voltage 40 V K 0.55 MAX F F L 2.30 VCEO Collector-Emitter Voltage 30 V M 0.45 MAX N 1.00 1 2 3 VEBO Emitter-Base Voltage 5 V 1. EMITTER IC Collector Current 500 mA 2. BASE 3. COLLECTOR IE Emitter Current -500 mA 625 PC* Collector Power Dissipation mW 400 TO-92 Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 0.1 ? A IEBO VEB=5V, IC=0 Emitter Cut

1.17. s9013.pdf Size:587K _htsemi

9013
9013
S901 3 TRANSISTOR(NPN) SOT-23 FEATURES 1. BASE Complementary to S9012 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 40 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO 25 V IC= 0.1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 ?A Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Collector cut-off current ICEO VCE=20V, IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 hFE(1) VCE=1V, IC= 50mA 120 400

1.18. s9013w.pdf Size:431K _htsemi

9013
9013
S901 3W TRANSISTOR(NPN) SOT–323 FEATURES ? High Collector Current ? Excellent HFE Linearity MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO 2. EMITTER V Collector-Emitter Voltage 25 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA P Collector Power Dissipation 200 mW C R Thermal Resistance From Junction To Ambient 625 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100µA, I =0 40 V (BR)CBO C E Collector-emitter breakdown voltage V I =1mA, I =0 25 V (BR)CEO C B Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current I V =40V, I =0 100 nA CBO CB E Collector cut-off current I V =20V, I =0 100 nA CEO CE B Emitter cut-off cu

1.19. s9013.pdf Size:240K _gsme

9013
9013
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9013 FEATURES ¦FEATURES ?? FEATURES Excellent HFE Linearity HFE ?????? hFE(2)=25(Min.) at VCE=6V,Ic=400mA. Complementary to GM9012 ? GM9012 ?? MAXIMUM RATINGS (Ta=25 ) ¦MAXIMUM RATINGS ?????(Ta=25?) MAXIMUM RATINGS (Ta=25 ) Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Base voltage VCBO 40 Vdc ???-???? -Collector-Emitter Voltage VCEO 30 Vdc ???-????? Emitter-Base voltage VEBO 5.0 Vdc ???-???? Collector Current-Continuous Ic 500 mAdc ?????-?? Base-Current IB 50 mAdc ???? Collector Power Dissipation PC 300 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM9013=J3 ? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micr

1.20. s9013_sot-23.pdf Size:167K _lge

9013
9013
S9013 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 40 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO 25 V IC= 0.1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 ?A Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Collector cut-off current ICEO VCE=20V, IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 5

1.21. s9013_to-92.pdf Size:158K _lge

9013
9013
S9013 Transistor(NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 500 mA Dimensions in inches and (millimeters) PC Collector Dissipation 625 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A , IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A , IC=0 5 V ?A Collector cut-off current ICBO VCB= 40V , IE=0 0.1 ?A Collector cut-off current ICEO VCE=20V , IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 hFE(1) VCE=1V,

1.22. s9013lt1.pdf Size:125K _wietron

9013
9013
S9013LT1 3 P b Lead(Pb)-Free 1 2 SOT-23 Value VCEO 20 40 5.0 500 S9013PLT1=13P S9013QLT1=13Q S9013RLT1=13R S9013SLT1=13S 0.1 20 40 100 100 u 0.15 35 0.15 u 4.0 1/2 28-Apr-2011 WEITRON http://www.weitron.com.tw S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain hFE 600 - 100 (IC=50 mAdc, VCE=1.0 Vdc) Collector-Emitter Saturation Voltage - Vdc VCE(sat) 0.6 (IC=500 mAdc, IB=50mAdc) CLASSIFICATION OF h FE Rank P Q R S Range 100-200 150-300 200-400 300-600 SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 D E 0.46 1.00 G E G 1.70 2.10 H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L L 0.30 0.61 J M M 0.076 0.25 WEITRON 2/2 28-Apr-2011 http://www.weitron.com.tw

1.23. 9013plt1_9013qlt1_9013rlt1_9013slt1.pdf Size:276K _willas

9013
9013
FM120-M WILLAS THRU 9013xLT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product NPN Silicon Package outline Features • Batch process design, excellent power dissipation offers FEATURE better reverse leakage current and thermal resistance. SOD-123H We declare that the material of product compliance with RoHS requirements. • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. DEVICE MARKING AND ORDERING INFORMATION • Guardring for overvoltage protection. 0.071(1.8) SOT-23 • Ultra high-speed switching. Device Marking Shipping 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. 9013PLT1 3000/Tape&Reel • Lead-free parts mee13P t environmental standards of MIL-STD-19500

1.24. btc9013a3.pdf Size:319K _cystek

9013
9013
Spec. No. : C203A3 Issued Date : 2014.02.17 CYStech Electronics Corp. Revised Date : 2014.02.24 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC9013A3 Description • The BTC9013A3 is designed for using in driver stage of AF amplifier and general purpose switching application. • High current , I = 0.6A C • Low V , V = 50mV(typ.) at I /I = 100mA/10mA, Optimal for low Voltage operation CE(sat) CE(sat) C B • Complementary to BTA9012A3. • Pb-free lead plating and halogen-free package Symbol Outline BTC9013A3 TO-92 B:Base C:Collector E:Emitter E B C Ordering Information Device Package Shipping TO-92 BTC9013A3-0-TB-G 2000 pcs / Tape & Box (Pb-free lead plating and halogen-free package) TO-92 1000 pcs/ bag, 10 bags/box, BTC9013A3-0-BK-G (Pb-free lead plating and halogen-free package) 10boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound p

See also transistors datasheet: 9011H , 9011I , 9012 , 9012D , 9012E , 9012F , 9012G , 9012H , 2N2907 , 9013D , 9013E , 9013F , 9013G , 9013H , 9014 , 9014D , 9014E .

Keywords

 9013 Datasheet  9013 Datenblatt  9013 RoHS  9013 Distributor
 9013 Application Notes  9013 Component  9013 Circuit  9013 Schematic
 9013 Equivalent  9013 Cross Reference  9013 Data Sheet  9013 Fiche Technique

 

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com