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9013 Transistor (IC) Datasheet. Cross Reference Search. 9013 Equivalent

Type Designator: 9013

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.4

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.4

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 3.5

Forward current transfer ratio (hFE), min: 64

Noise Figure, dB: -

Package of 9013 transistor: TO92

9013 Transistor Equivalent Substitute - Cross-Reference Search

9013 PDF:

1.1. rfm12u7x_090130.pdf Size:175K _toshiba

9013
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RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this

1.2. rfm00u7u_090130.pdf Size:163K _toshiba

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RFM00U7U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM00U7U VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this d

1.3. rfm01u7p_090130.pdf Size:161K _toshiba

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RFM01U7P TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM01U7P VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this d

1.4. ss9013.pdf Size:40K _fairchild_semi

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SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-

1.5. ss9013.pdf Size:53K _samsung

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SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO

1.6. 9013.pdf Size:88K _utc

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UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1 FEATURES * High total power dissipation. (625mW) * High collector current. (500mA) * Excellent hFE linearity. TO-92 * Complementary to UTC 9012 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free

1.7. mmbt9013.pdf Size:144K _utc

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UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total Power Dissipation. (625mW) *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1

1.8. sts9013.pdf Size:197K _auk

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STS9013 NPN Silicon Transistor Descriptions PIN Connection • General purpose application. C • Switching application. B Features • Excellent hFE linearity. E • Complementary pair with STS9012 TO-92 Ordering Information Type NO. Marking Package Code STS9013 STS9013 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base

1.9. s9013.pdf Size:343K _secos

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1.10. s9013w.pdf Size:54K _secos

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S9013W 0.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 High Collector Current Excellent HFE Linearity A L 3 3 CLASSIFICATION OF hFE Top View C B 1 1 2 Product-Rank S9013W-L S9013W-H S9013W-J 2 K E Range 120~200 200~350 300~400 D Marking Code J3 H

1.11. s9013t.pdf Size:95K _secos

9013
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S9013T NPN Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURE Power dissipation P CM : 0.625 W Tamb=25 C Collector current CM: 0.5 A I 0.43+0.08 –0.07 Collector-base voltage 46+0.1 0. –0.1 V(BR)CBO : 40 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter +0.2 1.

1.12. 9013.pdf Size:76K _wingshing

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NPN SILICON TRANSISTOR 9013 TO 92 FEATURES 1.EMITTER ? ? ? ? ? ? ? ? ? ? ? Power dissipation ?????? 2.BASE ? ? PCM : 0.625 W Tamb=25 3.COLLECTOR Collector current ??????? ? ? ? ICM : 0.5 A 1 2 3 Collector-base voltage ???--?????? V(BR)CBO : 45 V ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified ? ? ? ???? ? ? ? ? ? ? ? ? ? ???? ? ? ? ? ? ? ? ? ? ??

1.13. cmbt9013.pdf Size:131K _cdil

9013
9013

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT 9013 PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 35 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V Coll

1.14. cd9013.pdf Size:94K _cdil

9013
9013

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9013 TO-92 Plastic Package C B E General Purpose Audio Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C Unless Otherwise Specified) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 30 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Vol

1.15. ktc9013.pdf Size:46K _kec

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9013

SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity. ·Complementary to KTC9012. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25?) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO Collecto

1.16. ktc9013s.pdf Size:395K _kec

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9013

SEMICONDUCTOR KTC9013S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity. _ A 2.93 0.20 + B 1.30+0.20/-0.15 Complementary to KTC9012S. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 MAXIMUM RATING (Ta=25 ) L 0.55 P P

1.17. 2sc9013.pdf Size:84K _usha

9013
9013

Transistors 2SC9013 Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor

1.18. s9013.pdf Size:587K _htsemi

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9013

S901 3 TRANSISTOR(NPN) SOT-23 FEATURES 1. BASE Complementary to S9012 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Diss

1.19. s9013w.pdf Size:431K _htsemi

9013
9013

S901 3W TRANSISTOR(NPN) SOT–323 FEATURES ? High Collector Current ? Excellent HFE Linearity MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO 2. EMITTER V Collector-Emitter Voltage 25 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA P Collector Power Dissipation 200 mW

1.20. s9013.pdf Size:240K _gsme

9013
9013

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9013 FEATURES ¦FEATURES ?? FEATURES Excellent HFE Linearity HFE ?????? hFE(2)=25(Min.) at VCE=6V,Ic=400mA. Complementary to GM9012 ? GM9012 ?? MAXIMUM RATINGS (Ta=25 ) ¦MAXIMUM RATINGS ?????(Ta=25?) MAXIMUM RATINGS (Ta=25 ) Character

1.21. s9013_to-92.pdf Size:158K _lge

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S9013 Transistor(NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 500 mA Dimensions in inches and (millimeter

1.22. s9013_sot-23.pdf Size:167K _lge

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S9013 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Curre

1.23. s9013lt1.pdf Size:125K _wietron

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S9013LT1 3 P b Lead(Pb)-Free 1 2 SOT-23 Value VCEO 20 40 5.0 500 S9013PLT1=13P S9013QLT1=13Q S9013RLT1=13R S9013SLT1=13S 0.1 20 40 100 100 u 0.15 35 0.15 u 4.0 1/2 28-Apr-2011 WEITRON http://www.weitron.com.tw S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain hFE

1.24. 9013plt1_9013qlt1_9013rlt1_9013slt1.pdf Size:276K _willas

9013
9013

FM120-M WILLAS THRU 9013xLT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product NPN Silicon Package outline Features • Batch process design, excellent power dissipation offers FEATURE better reverse leakage current and thermal resistance. SOD-123H We declare that the material of product compliance w

1.25. btc9013a3.pdf Size:319K _cystek

9013
9013

Spec. No. : C203A3 Issued Date : 2014.02.17 CYStech Electronics Corp. Revised Date : 2014.02.24 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC9013A3 Description • The BTC9013A3 is designed for using in driver stage of AF amplifier and general purpose switching application. • High current , I = 0.6A C • Low V , V = 50mV(typ.) at I /I = 100mA/10mA,

1.26. s9013.pdf Size:256K _can-sheng

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9013

TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES z FEATURES TO-92 Complementary to S9012 z Excellent hFE linearity 1.EMITTER MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS 2.BASE Symbol Parameter Val

1.27. s9013_sot-23.pdf Size:260K _can-sheng

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 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURES Complimentary to S9012 Collector current:Ic=0.5A MARKING:J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单

1.28. 9013m.pdf Size:817K _blue-rocket-elect

9013
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9013M(3DG9013M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9012M(BR3CG9012M)互补。 C FE High PC and hFE, excellent hFE linearity, complementary pair with 9012M(BR3CG9012M). 用途 / Applications 用于收音机推挽功放。

1.29. l9013rlt1g.pdf Size:151K _lrc

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9013

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L9013PLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device Marking Sh

1.30. l9013qlt1g.pdf Size:151K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE L9013PLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L9013PLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

1.31. l9013plt1g.pdf Size:155K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L9013PLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

1.32. l9013slt1g.pdf Size:153K _lrc

9013
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9013PLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

1.33. ftc9013s.pdf Size:96K _first_silicon

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SEMICONDUCTOR FTC9013S TECHNICAL DATA X General Purpose Transistors NPN Silicon FEATURE 3 We declare that the material of product compliance with RoHS requirements. 2 ORDERING INFORMATION 1 Device Package Shipping SOT-23 FTC9013SX SOT– 23 FTC9013SX 10000/Tape&Reel SOT-23 3 COLLECTOR MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 20

1.34. kst9013.pdf Size:987K _kexin

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SMD Type TransistICs SMD Type or SMD Type NPN Transistors KST9013 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Excellent hFE linearity Collector Current :IC=0.5A 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage

1.35. kst9013c.pdf Size:388K _kexin

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9013

SMD Type IC SMD Type Transistors SMD Type NPN Transistors KST9013C SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Excellent hFE linearity Collector Current :IC=0.5A 12 +0.1 +0.05 0.95-0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 V Collector - Emitter Voltag

1.36. s9013.pdf Size:407K _shenzhen-tuofeng-semi

9013
9013

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) TO-92 FEATURE Complementary to S9012 1. EMITTER Excellent hFE linearity 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emi

1.37. s9013lt1.pdf Size:359K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to S9012 Excellent hFE linearity MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter

See also transistors datasheet: 9011H , 9011I , 9012 , 9012D , 9012E , 9012F , 9012G , 9012H , 2N2907 , 9013D , 9013E , 9013F , 9013G , 9013H , 9014 , 9014D , 9014E .

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