All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
9014
  9014
  9014
 
9014
  9014
  9014
 
9014
  9014
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
9014 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

9014 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 9014

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.315

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 3.5

Forward current transfer ratio (hFE), min: 64

Noise Figure, dB: -

Package of 9014 transistor: TO92

9014 Equivalent Transistors - Cross-Reference Search

9014 PDF doc:

1.1. ss9014.pdf Size:38K _fairchild_semi

9014
9014
SS9014 Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 450 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC =100A, IE =0 50 V BVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 45 V BVEBO Emitter-Base Breakdown Voltage IE =100A, IC =0 5 V ICBO Collector Cut-off Current VCB =50V, IE =0 50 nA IEBO Emitter Cut-off Current VEB =5V, IC =0 50 nA hFE DC Current Gain VCE =5V, IC =1mA 60 2

1.2. irfr9014pbf_irfu9014pbf.pdf Size:1864K _international_rectifier

9014
9014
PD- 95383A IRFR9014PbF IRFU9014PbF Lead-Free 12/07/04 Document Number: 91277 www.vishay.com 1 IRFR/U9014PbF Document Number: 91277 www.vishay.com 2 IRFR/U9014PbF Document Number: 91277 www.vishay.com 3 IRFR/U9014PbF Document Number: 91277 www.vishay.com 4 IRFR/U9014PbF Document Number: 91277 www.vishay.com 5 IRFR/U9014PbF Document Number: 91277 www.vishay.com 6 IRFR/U9014PbF Document Number: 91277 www.vishay.com 7 IRFR/U9014PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 PART NUMBER WITH ASSEMBLY INT ERNATIONAL LOT CODE 1234 DAT E CODE RECTIFIER IRFU120 AS SEMBLED ON WW 16, 1999 LOGO YEAR 9 = 1999 916A IN T HE ASS EMBLY LINE "A" 12 34 WEEK 16 LINE A Note: "P" in as sembly line pos ition AS SEMBLY indicates "Lead-Free" LOT CODE OR PART NUMBER INTERNAT IONAL DATE CODE RECT IFIER IRFU120 P = DESIGNAT ES LEAD-FREE LOGO PRODUCT

1.3. irfl9014pbf.pdf Size:256K _international_rectifier

9014
9014
PD - 95153 IRFL9014PbF HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel D VDSS = -60V l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel RDS(on) = 0.50? l Fast Switching G l Ease of Paralleling l Lead-Free ID = -1.8A S Descripti?n Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of SOT-223 grreater than 1.25W is possible in a typical surface mount application. Abs?Iute Maximum Ratings Parameter Max. Units ID @ Tc = 25C Continuous Drain Current, VGS @ -10 V -1.8 ID

1.4. irfd9014.pdf Size:177K _international_rectifier

9014
9014

1.5. irfl9014.pdf Size:222K _international_rectifier

9014
9014
PD - 90863A IRFL9014 HEXFET Power MOSFET Surface Mount Available in Tape & Reel D VDSS = -60V Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel RDS(on) = 0.50? Fast Switching G Ease of Paralleling ID = -1.8A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of SOT-223 grreater than 1.25W is possible in a typical surface mount application. Absolute Maximum Ratings Parameter Max. Units ID @ Tc = 25C Continuous Drain Current, VGS @ -10 V -1.8 ID @ Tc = 100C Continuo

1.6. irfr9014.pdf Size:177K _international_rectifier

9014
9014

1.7. irfd9014pbf.pdf Size:1819K _international_rectifier

9014
9014
PD- 95925 IRFD9014PbF Lead-Free 10/27/04 Document Number: 91136 www.vishay.com 1 IRFD9014PbF Document Number: 91136 www.vishay.com 2 IRFD9014PbF Document Number: 91136 www.vishay.com 3 IRFD9014PbF Document Number: 91136 www.vishay.com 4 IRFD9014PbF Document Number: 91136 www.vishay.com 5 IRFD9014PbF Document Number: 91136 www.vishay.com 6 IRFD9014PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + - + - dv/dt controlled by RG + ISD controlled by Duty Factor "D" - D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent

1.8. sfr9014.pdf Size:495K _samsung

9014
9014
Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -5.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.362 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -60 Continuous Drain Current (TC=25oC) -5.3 ID A Continuous Drain Current (TC=100oC) -3.7 1 IDM Drain Current-Pulsed 21 A O 2 _ VGS Gate-to-Source Voltage V O EAS Single Pulsed Avalanche Energy 72 mJ 1 IAR Avalanche Current -5.3 A O EAR Repetitive Avalanche Energy 1 O 2.4 mJ dv/dt Peak Diode Recovery dv/dt 3 -5.5 V/ns O * Total Power Dissipation (TA=25oC) 2.5 W PD Total Power Dissipation (TC=25oC) 24 W Linear Derating Factor 0.19 W/oC Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C

1.9. ss9014.pdf Size:47K _samsung

9014
9014
SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 mA Collector Current IC 100 mW Collector Dissipation PC 450 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC =100 , IE =0 50 V Collector-Emitter Breakdown Voltage BVCEO IC =1mA, IB =0 45 V Emitter-Base Breakdown Voltage BVEBO IE =100 , IC =0 V 5 Collector Cut-off Current ICBO VCB =50V, IE =0 50 nA Emitter Cut-off Current IEBO VEB =5V, IC =0 50 nA DC Current Gain hFE VCE =5V, IC =1mA 60 280 1000 Collector-Base Saturation Voltage VC

1.10. sfm9014.pdf Size:949K _samsung

9014
9014
Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V 2 Lower RDS(ON) : 0.362 ? (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -60 Continuous Drain Current (TA=25oC) -1.8 ID A Continuous Drain Current (TA=70oC) -1.1 1 IDM Drain Current-Pulsed -14 A O 2 _ VGS Gate-to-Source Voltage V O EAS Single Pulsed Avalanche Energy mJ 8.3 1 IAR Avalanche Current O -1.8 A 1 EAR Repetitive Avalanche Energy mJ O 0.28 3 dv/dt Peak Diode Recovery dv/dt -5.5 V/ns O * 2.8 W PD Total Power Dissipation (TA=25oC) * Linear Derating Factor W/oC 0.022 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300

1.11. irfd9014_sihfd9014.pdf Size:1750K _vishay

9014
9014
IRFD9014, SiHFD9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) (?)VGS = - 10 V 0.50 For Automatic Insertion RoHS* Qg (Max.) (nC) 12 COMPLIANT End Stackable Qgs (nC) 3.8 P-Channel Qgd (nC) 5.1 175 C Operating Temperature Configuration Single Fast Switching S Compliant to RoHS Directive 2002/95/EC HVMDIP DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S G The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on D D standard 0.1" pin centers. The dual drain servers as a P-Channel MOSFET thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package HVMDIP IRFD9014PbF Lead (Pb)-free SiHFD9014-E3 IRF

1.12. irfr9014_irfu9014_sihfr9014_sihfu9014.pdf Size:2009K _vishay

9014
9014
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.50 RoHS* Surface Mount (IRFR9014/SiHFR9014) COMPLIANT Qg (Max.) (nC) 12 Straight Lead (IRFU9014/SiHFU9014) Qgs (nC) 3.8 Available in Tape and Reel Qgd (nC) 5.1 P-Channel Configuration Single Fast Switching S Lead (Pb)-free Available DESCRIPTION DPAK IPAK Third generation Power MOSFETs from Vishay provide the (TO-252) (TO-251) G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight D lead version (IRFU/SiHFU series) is for through-hole P-Channel MOSFET mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. OR

1.13. irfr9014_irfu9014_sihfr9014_sihfu9014_2.pdf Size:1891K _vishay

9014
9014
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 60 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = - 10 V 0.50 Repetitive Avalanche Rated Qg (Max.) (nC) 12 Surface Mount (IRFR9014, SiHFR9014) Qgs (nC) 3.8 Straight Lead (IRFU9014, SiHFU9014) Available in Tape and Reel Qgd (nC) 5.1 P-Channel Configuration Single Fast Switching S Compliant to RoHS Directive 2002/95/EC DESCRIPTION DPAK IPAK Third generation Power MOSFETs from Vishay provide the (TO-252) (TO-251) designer with the best combination of fast switching, G D ruggedized device design, low on-resistance and D cost-effectiveness. The DPAK is designed for surface mounting using vapor S G S phase, infrared, or wave soldering techniques. The straight D G lead version (IRFU, SiHFU series) is for through-hole D mounting applications. Power dissipation levels up to 1.5 W P-Channel MOS

1.14. irfl9014_sihfl9014.pdf Size:168K _vishay

9014
9014
IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Surface Mount RDS(on) (?)VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 12 Dynamic dV/dt Rating Qgs (nC) 3.8 Repetitive Avalanche Rated P-Channel Qgd (nC) 5.1 Fast Switching Configuration Single Ease of Paralleling S Compliant to RoHS Directive 2002/95/EC DESCRIPTION SOT-223 Third generation Power MOSFETs from Vishay provide the D designer with the best combination of fast switching, G ruggedized device design, low on-resistance and S cost-effectiveness. D The SOT-223 package is designed for surface-mounting G using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but D has the added advantage of improved thermal performace P-Channel MOSFET due to an enlarged tab for heatsink

1.15. sts9014.pdf Size:207K _auk

9014
9014
STS9014 NPN Silicon Transistor Description PIN Connection • General purpose application C • Switching application Features B • Excellent hFE linearity : hFE(IC=0.1 mA) / hFE(IC=2 mA) = 0.95(Typ.) • Low noise : NF=10dB(Max.) at f=1KHz E • Complementary pair with STS9015 TO-92 Ordering Information Type NO. Marking Package Code STS9014 STS9014 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Emitter current IE -150 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB=50V, IE=0 - - 50 nA Emitter cut-off current IEBO VEB=5V, IC=0 - - 100 nA DC current gain hFE* VCE=5V, IC=1mA 100 - 1000 - Collec

1.16. s9014.pdf Size:253K _secos

9014
9014
S9014 NPN Silicon Elektronische Bauelemente Pre-Amplifier, Low Level & Low Noise RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector ? Dim Min Max 3 3 ? A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 ? C 0.890 1.110 2 Base PCM : 0.2 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM : 0.1 A A Emitter H 0.013 0.100 L Collector-base voltage J 0.085 0.177 3 V(BR)CBO : 50 V K 0.450 0.600 S Top View B Operating & storage junction temperature 12 L 0.890 1.020 O O Tj, Tstg : - 55 C ~ + 150 C S 2.100 2.500 V G V 0.450 0.600 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 50 V Ic= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current I

1.17. s9014t.pdf Size:130K _secos

9014
9014
S9014T NPN Silicon Elektronische Bauelemente Pre-Amplifier, Low Level & Low Noise RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES 4.55±0.2 3.5±0.2 ? Power dissipation ? PCM : 0.4 W Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V 0.43+0.08 –0.07 46+0.1 0. –0.1 Operating & storage junction temperature (1.27 Typ.) O O Tj, Tstg : - 55 C ~ + 150 C 1: Emitter +0.2 1.25–0.2 2: Base 1 2 3 3: Collector 2.54±0.1 O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 50 V Ic= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=50 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE=35V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 ?A DC cur

1.18. s9014w.pdf Size:263K _secos

9014
9014
S9014W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE Complementary to S9015W A L 3 3 Top View C B 1 1 2 2 K E PACKAGING INFORMATION Weight: 0.0074 g D Collector H J F G 3 Millimeter Millimeter REF. REF. Min. Max. Min. Max. MARKING CODE 1 A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. Base C 1.15 1.35 J 0.08 0.25 J6 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. 2 F 0.20 0.40 Emitter ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 5 V Collector Current – Continuous IC 100 mA Collector Power Dissipation PC 200 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) Parameter Symbol Min.

1.19. cd9014.pdf Size:176K _cdil

9014
9014
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9014 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 50 V Collector -Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Collector Power Dissipation PC 625 mW Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Emitter Voltage VCEO IC=1mA, IB=0 50 - - V Collector -Base Voltage VCBO IC=100uA, IE=0 50 - - V Emitter Base Voltage VEBO IE=100uA, IC=0 5.0 - - V Collector Cut off Current ICBO VCB=50V, IE=0 - - 50 nA Emitter Cut off Current IEBO VEB=5V, IC=0 - - 50 nA DC Current Gain hFE IC=1mA,VCE=5V 60 - 1000 Collector Emitter Saturation Voltage VCE(Sat) IC=100mA,IB=5mA - - 0.30 V Emitter Base Saturation Voltage VBE(Sa

1.20. cmbt9014.pdf Size:128K _cdil

9014
9014
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT9014 PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 30 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Collector Dissipation PC 250 mW Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Base Voltage VCBO IC=100uA, IE=0 30 - - V Collector -Emitter Voltage VCEO IC=1mA, IB=0 30 - - V Emitter Base Voltage VEBO IE=100uA, IC=0 5.0 - - V Collector Cut off Current ICBO VCB=30V, IE=0 - - 15 nA Emitter Cut off Current IEBO VEB=5V, IC=0 - - 500 nA DC Current Gain hFE IC=1mA, VCE=5V 150 - 1000 Collector Emitter Saturati

1.21. ktc9014a.pdf Size:343K _kec

9014
9014
SEMICONDUCTOR KTC9014A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS ·Low Noise :NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX ·Complementary to KTC9015A. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25?) H J 14.00 + 0.50 K 0.55 MAX F F CHARACTERISTIC SYMBOL RATING UNIT L 2.30 M 0.45 MAX VCBO N 1.00 Collector-Base Voltage 60 V 1 2 3 VCEO Collector-Emitter Voltage 50 V 1. EMITTER 2. BASE VEBO Emitter-Base Voltage 5V 3. COLLECTOR IC Collector Current 150 mA IE Emitter Current -150 mA TO-92 (F) PC Collector Power Dissipation 400 mW Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=50V, IE=0 Collector Cut-off Current - - 50 nA IEBO VEB

1.22. ktc9014s.pdf Size:396K _kec

9014
9014
SEMICONDUCTOR KTC9014S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity _ A 2.93 0.20 + B 1.30+0.20/-0.15 : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). C 1.30 MAX 2 Low Noise :NF=1dB(Typ.) at f=1kHz. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Complementary to KTC9015S. 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 MAXIMUM RATING (Ta=25 ) P 7 CHARACTERISTIC SYMBOL RATING UNIT M VCBO Collector-Base Voltage 60 V 1. EMITTER VCEO Collector-Emitter Voltage 50 V 2. BASE VEBO Emitter-Base Voltage 5 V 3. COLLECTOR IC Collector Current 150 mA IE Emitter Current -150 mA SOT-23 PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BD ELECTRICAL CHARACTERISTICS (Ta=25

1.23. ktc9014.pdf Size:349K _kec

9014
9014
SEMICONDUCTOR KTC9014 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS ·Low Noise :NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX ·Complementary to KTC9015. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25?) H J 14.00 + 0.50 K 0.55 MAX F F CHARACTERISTIC SYMBOL RATING UNIT L 2.30 M 0.45 MAX VCBO N 1.00 Collector-Base Voltage 60 V 1 2 3 VCEO Collector-Emitter Voltage 50 V 1. EMITTER 2. BASE VEBO Emitter-Base Voltage 5 V 3. COLLECTOR IC Collector Current 150 mA IE Emitter Current -150 mA TO-92 (F) PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=50V, IE=0 Collector Cut-off Current - - 50 nA IEBO VEB=

1.24. s9014.pdf Size:821K _htsemi

9014
9014
S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING: J6 unless otherwise noted) MAXIMUM RATINGS (TA=25? Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE=35V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 ?A DC current gain hFE VCE=5V, IC= 1mA 200 1000 Collector-emitte

1.25. s9014w.pdf Size:458K _htsemi

9014
9014
S901 4W TRANSISTOR(NPN) SOT–323 FEATURES ? Complementary to S9015W ? Small Surface Mount Package MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO 2. EMITTER V Collector-Emitter Voltage 45 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Current 100 mA P Collector Power Dissipation 200 mW C R Thermal Resistance From Junction To Ambient 625 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100µA, I =0 50 V (BR)CBO C E Collector-emitter breakdown voltage V I =100µA, I =0 45 V (BR)CEO C B Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current I V =50V, I =0 100 nA CBO CB E Collector cut-off current I V =35V, I =0 100 nA CEO CE B Emitter cu

1.26. s9014.pdf Size:241K _gsme

9014
9014
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9014 FEATURES ¦FEATURES ?? FEATURES Excellent HFE Linearity HFE ??????:HFE(0.1mA)/ hFE(2mA)=0.95(Typ.) High HFE ? HFE:HFE=200?700 Low Noise ???:NF=1dB(Typ.),10dB(Max.). Complementary to GM9015 ? GM9015 ?? MAXIMUM RATINGS (Ta=25 ) ¦MAXIMUM RATINGS (Ta=25?) ????? MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage VCBO 50 Vdc ???-???? Collector-Emitter Voltage VCEO 45 Vdc ???-????? Emitter-Base Voltage VEBO 5.0 Vdc ???-???? Collector Current-Continuous Ic 150 mAdc ?????-?? Base Current IB 30 mAdc ???? Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM9014=J6 GM9014=J6 GM9014=J6 ? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Mic

1.27. s9014_sot-23.pdf Size:198K _lge

9014
9014
S9014 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9015 MARKING: J6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE=35V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 ?A DC current gain hFE VCE

1.28. s9014_to-92.pdf Size:190K _lge

9014
9014
S9014(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.45 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 ?A Collector cut-off current ICEO VCE=35V, IB=0 0.1 ?A Emitter cut

1.29. s9014lt1.pdf Size:191K _wietron

9014
9014
S9014LT1 3 1 2 SOT-23 Value V CEO 45 50 5.0 100 225 1.8 556 S9014QLT1=14Q S9014RLT1=14R S9014SLT1=14S S9014TLT1=14T 0.1 45 50 100 100 u 0.1 40 0.1 u 3.0 WEITRON 1/ 28-Apr-2011 http://www.weitron.com.tw S9014LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain hFE 1000 150 - (IC=1.0 mAdc, V CE=5.0 Vdc) Collector-Emitter Saturation Voltage VCE(sat) - Vdc 0.3 (I C=100 mAdc, I B=5.0mAdc) CLASSIFICATION OF h FE Rank Q R S T Range 150-300 200-400 300-600 400-1000 SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 D E 0.46 1.00 G E G 1.70 2.10 H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L L 0.30 0.61 J M M 0.076 0.25 WEITRON 2/ 28-Apr-2011 http://www.weitron.com.tw S9014LT1 STATIC CHARACTERISTIC DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDT

1.30. s9014.pdf Size:824K _wietron

9014
9014
S9014 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 45 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 100 mAdc PD 0.4 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55 to +150 Storage, Temperature Tstg C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) V(BR)CEO 45 Vdc Collector-Base Breakdown Voltage (IC= 100uAdc, IB=0) V(BR)CBO 50 - Vdc Vdc V(BR)EBO 5.0 - Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) - ICBO uAdc 0.1 Collector Cutoff Current (V = 50 Vdc, IE=0) CB - IEBO d Emitter Cutoff Current (VEB= 3.0V c, I =0) 0.1 uAdc C WEITRON http://www.weitron.com.tw S9014 WEITRON WEITR ON Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristi

1.31. 9014qlt1_9014rlt1_9014slt1_9014tlt1.pdf Size:305K _willas

9014
9014
FM120-M WILLAS 9014xLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H NPN Silicon • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. FEATURE • High current capability, low forward voltage drop. • High surge capabi9015. lity. Complementary to • Guardring for overvoltage protection. We declare that the material of product compliance with RoHS requirements. 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" SOT– 23 Halogen free

1.32. he9014.pdf Size:57K _hsmc

9014
9014
Spec. No. : HE6102 HI-SINCERITY Issued Date : 1992.08.25 Revised Date : 2005.02.04 MICROELECTRONICS CORP. Page No. : 1/5 HE9014 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9014 is designed for use in pre-amplifier of low level and low noise. TO-92 Features • High Total Power Dissipation (PD: 450mW) • Complementary to HE9015 • High hFE and Good Linearity Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 450 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to

See also transistors datasheet: 9012G , 9012H , 9013 , 9013D , 9013E , 9013F , 9013G , 9013H , 2N60C , 9014D , 9014E , 9014F , 9014G , 9014H , 9015 , 9015A , 9015B .

Keywords

 9014 Datasheet  9014 Datenblatt  9014 RoHS  9014 Distributor
 9014 Application Notes  9014 Component  9014 Circuit  9014 Schematic
 9014 Equivalent  9014 Cross Reference  9014 Data Sheet  9014 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com