All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
9014
  9014
  9014
 
9014
  9014
  9014
 
9014
  9014
 
 
List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
9014 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

9014 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 9014

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.315

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 3.5

Forward current transfer ratio (hFE), min: 64

Noise Figure, dB: -

Package of 9014 transistor: TO92

9014 Equivalent Transistors - Cross-Reference Search

9014 PDF doc:

1.1. ss9014.pdf Size:38K _fairchild_semi

9014
9014
SS9014 Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 450 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC =100A, IE =0 50 V BVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 45 V BVEBO Emitter-Base Breakdown Voltage IE =100A, IC =0 5 V ICBO Collector Cut-off Current VCB =50V, IE =0 50 nA IEBO Emitter Cut-off Current VEB =5V, IC =0 50 nA hFE DC Current Gain VCE =5V, IC =1mA 60 2

1.2. irfd9014pbf.pdf Size:1819K _international_rectifier

9014
9014
PD- 95925 IRFD9014PbF Lead-Free 10/27/04 Document Number: 91136 www.vishay.com 1 IRFD9014PbF Document Number: 91136 www.vishay.com 2 IRFD9014PbF Document Number: 91136 www.vishay.com 3 IRFD9014PbF Document Number: 91136 www.vishay.com 4 IRFD9014PbF Document Number: 91136 www.vishay.com 5 IRFD9014PbF Document Number: 91136 www.vishay.com 6 IRFD9014PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + - + - dv/dt controlled by RG + ISD controlled by Duty Factor "D" - D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent

1.3. irfd9014.pdf Size:177K _international_rectifier

9014
9014

1.4. irfl9014.pdf Size:222K _international_rectifier

9014
9014
PD - 90863A IRFL9014 HEXFET Power MOSFET Surface Mount Available in Tape & Reel D VDSS = -60V Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel RDS(on) = 0.50? Fast Switching G Ease of Paralleling ID = -1.8A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of SOT-223 grreater than 1.25W is possible in a typical surface mount application. Absolute Maximum Ratings Parameter Max. Units ID @ Tc = 25C Continuous Drain Current, VGS @ -10 V -1.8 ID @ Tc = 100C Continuo

1.5. irfr9014.pdf Size:177K _international_rectifier

9014
9014

1.6. irfl9014pbf.pdf Size:256K _international_rectifier

9014
9014
PD - 95153 IRFL9014PbF HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel D VDSS = -60V l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel RDS(on) = 0.50? l Fast Switching G l Ease of Paralleling l Lead-Free ID = -1.8A S Descripti?n Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of SOT-223 grreater than 1.25W is possible in a typical surface mount application. Abs?Iute Maximum Ratings Parameter Max. Units ID @ Tc = 25C Continuous Drain Current, VGS @ -10 V -1.8 ID

1.7. irfr9014pbf_irfu9014pbf.pdf Size:1864K _international_rectifier

9014
9014
PD- 95383A IRFR9014PbF IRFU9014PbF Lead-Free 12/07/04 Document Number: 91277 www.vishay.com 1 IRFR/U9014PbF Document Number: 91277 www.vishay.com 2 IRFR/U9014PbF Document Number: 91277 www.vishay.com 3 IRFR/U9014PbF Document Number: 91277 www.vishay.com 4 IRFR/U9014PbF Document Number: 91277 www.vishay.com 5 IRFR/U9014PbF Document Number: 91277 www.vishay.com 6 IRFR/U9014PbF Document Number: 91277 www.vishay.com 7 IRFR/U9014PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 PART NUMBER WITH ASSEMBLY INT ERNATIONAL LOT CODE 1234 DAT E CODE RECTIFIER IRFU120 AS SEMBLED ON WW 16, 1999 LOGO YEAR 9 = 1999 916A IN T HE ASS EMBLY LINE "A" 12 34 WEEK 16 LINE A Note: "P" in as sembly line pos ition AS SEMBLY indicates "Lead-Free" LOT CODE OR PART NUMBER INTERNAT IONAL DATE CODE RECT IFIER IRFU120 P = DESIGNAT ES LEAD-FREE LOGO PRODUCT

1.8. ss9014.pdf Size:47K _samsung

9014
9014
SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 mA Collector Current IC 100 mW Collector Dissipation PC 450 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC =100 , IE =0 50 V Collector-Emitter Breakdown Voltage BVCEO IC =1mA, IB =0 45 V Emitter-Base Breakdown Voltage BVEBO IE =100 , IC =0 V 5 Collector Cut-off Current ICBO VCB =50V, IE =0 50 nA Emitter Cut-off Current IEBO VEB =5V, IC =0 50 nA DC Current Gain hFE VCE =5V, IC =1mA 60 280 1000 Collector-Base Saturation Voltage VC

1.9. sfr9014.pdf Size:495K _samsung

9014
9014
Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -5.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.362 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -60 Continuous Drain Current (TC=25oC) -5.3 ID A Continuous Drain Current (TC=100oC) -3.7 1 IDM Drain Current-Pulsed 21 A O 2 _ VGS Gate-to-Source Voltage V O EAS Single Pulsed Avalanche Energy 72 mJ 1 IAR Avalanche Current -5.3 A O EAR Repetitive Avalanche Energy 1 O 2.4 mJ dv/dt Peak Diode Recovery dv/dt 3 -5.5 V/ns O * Total Power Dissipation (TA=25oC) 2.5 W PD Total Power Dissipation (TC=25oC) 24 W Linear Derating Factor 0.19 W/oC Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C

1.10. sfm9014.pdf Size:949K _samsung

9014
9014
Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V 2 Lower RDS(ON) : 0.362 ? (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -60 Continuous Drain Current (TA=25oC) -1.8 ID A Continuous Drain Current (TA=70oC) -1.1 1 IDM Drain Current-Pulsed -14 A O 2 _ VGS Gate-to-Source Voltage V O EAS Single Pulsed Avalanche Energy mJ 8.3 1 IAR Avalanche Current O -1.8 A 1 EAR Repetitive Avalanche Energy mJ O 0.28 3 dv/dt Peak Diode Recovery dv/dt -5.5 V/ns O * 2.8 W PD Total Power Dissipation (TA=25oC) * Linear Derating Factor W/oC 0.022 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300

1.11. irfr9014_irfu9014_sihfr9014_sihfu9014_2.pdf Size:1891K _vishay

9014
9014
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 60 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = - 10 V 0.50 Repetitive Avalanche Rated Qg (Max.) (nC) 12 Surface Mount (IRFR9014, SiHFR9014) Qgs (nC) 3.8 Straight Lead (IRFU9014, SiHFU9014) Available in Tape and Reel Qgd (nC) 5.1 P-Channel Configuration Single Fast Switching S Compliant to RoHS Directive 2002/95/EC DESCRIPTION DPAK IPAK Third generation Power MOSFETs from Vishay provide the (TO-252) (TO-251) designer with the best combination of fast switching, G D ruggedized device design, low on-resistance and D cost-effectiveness. The DPAK is designed for surface mounting using vapor S G S phase, infrared, or wave soldering techniques. The straight D G lead version (IRFU, SiHFU series) is for through-hole D mounting applications. Power dissipation levels up to 1.5 W P-Channel MOS

1.12. irfl9014_sihfl9014.pdf Size:168K _vishay

9014
9014
IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Surface Mount RDS(on) (?)VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 12 Dynamic dV/dt Rating Qgs (nC) 3.8 Repetitive Avalanche Rated P-Channel Qgd (nC) 5.1 Fast Switching Configuration Single Ease of Paralleling S Compliant to RoHS Directive 2002/95/EC DESCRIPTION SOT-223 Third generation Power MOSFETs from Vishay provide the D designer with the best combination of fast switching, G ruggedized device design, low on-resistance and S cost-effectiveness. D The SOT-223 package is designed for surface-mounting G using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but D has the added advantage of improved thermal performace P-Channel MOSFET due to an enlarged tab for heatsink

1.13. irfr9014_irfu9014_sihfr9014_sihfu9014.pdf Size:2009K _vishay

9014
9014
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.50 RoHS* Surface Mount (IRFR9014/SiHFR9014) COMPLIANT Qg (Max.) (nC) 12 Straight Lead (IRFU9014/SiHFU9014) Qgs (nC) 3.8 Available in Tape and Reel Qgd (nC) 5.1 P-Channel Configuration Single Fast Switching S Lead (Pb)-free Available DESCRIPTION DPAK IPAK Third generation Power MOSFETs from Vishay provide the (TO-252) (TO-251) G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight D lead version (IRFU/SiHFU series) is for through-hole P-Channel MOSFET mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. OR

1.14. irfd9014_sihfd9014.pdf Size:1750K _vishay

9014
9014
IRFD9014, SiHFD9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) (?)VGS = - 10 V 0.50 For Automatic Insertion RoHS* Qg (Max.) (nC) 12 COMPLIANT End Stackable Qgs (nC) 3.8 P-Channel Qgd (nC) 5.1 175 C Operating Temperature Configuration Single Fast Switching S Compliant to RoHS Directive 2002/95/EC HVMDIP DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S G The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on D D standard 0.1" pin centers. The dual drain servers as a P-Channel MOSFET thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package HVMDIP IRFD9014PbF Lead (Pb)-free SiHFD9014-E3 IRF

1.15. mmbt9014.pdf Size:125K _utc

9014
9014
UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High Total Power Dissipation. (450mW) * Excellent hFE Linearity. * Complementary to UTC MMBT9015 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBT9014G-x-AE3-R MMBT9014G-x-AE3-R SOT-23 E B C Tape Reel MARKING www.unisonic.com.tw 1 of 3 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R206-022,E MMBT9014 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA Collector dissipation PC 225 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings

1.16. 9014.pdf Size:63K _utc

9014
9014
UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES * High total power dissipation. (450mW) * Excellent hFE linearity. * Complementary to UTC 9015 *Pb-free plating product number: 9014L ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 9014-x-T92-B 9014L-x-T92-B TO-92 E B C Tape Box 9014-x-T92-K 9014L-x-T92-K TO-92 E B C Bulk www.unisonic.com.tw 1 of 3 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R201-031.B 9014 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25?, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA Collector Dissipation PC 450 mW Junction Temperature TJ +150 ? Storage Temperature TSTG -55 ~ +150 ? Note: Absolute maximum ratings are those values beyond which the device could be pe

1.17. sts9014.pdf Size:207K _auk

9014
9014
STS9014 NPN Silicon Transistor Description PIN Connection • General purpose application C • Switching application Features B • Excellent hFE linearity : hFE(IC=0.1 mA) / hFE(IC=2 mA) = 0.95(Typ.) • Low noise : NF=10dB(Max.) at f=1KHz E • Complementary pair with STS9015 TO-92 Ordering Information Type NO. Marking Package Code STS9014 STS9014 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Emitter current IE -150 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB=50V, IE=0 - - 50 nA Emitter cut-off current IEBO VEB=5V, IC=0 - - 100 nA DC current gain hFE* VCE=5V, IC=1mA 100 - 1000 - Collec

1.18. s9014.pdf Size:253K _secos

9014
9014
S9014 NPN Silicon Elektronische Bauelemente Pre-Amplifier, Low Level & Low Noise RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector ? Dim Min Max 3 3 ? A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 ? C 0.890 1.110 2 Base PCM : 0.2 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM : 0.1 A A Emitter H 0.013 0.100 L Collector-base voltage J 0.085 0.177 3 V(BR)CBO : 50 V K 0.450 0.600 S Top View B Operating & storage junction temperature 12 L 0.890 1.020 O O Tj, Tstg : - 55 C ~ + 150 C S 2.100 2.500 V G V 0.450 0.600 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 50 V Ic= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current I

1.19. s9014t.pdf Size:130K _secos

9014
9014
S9014T NPN Silicon Elektronische Bauelemente Pre-Amplifier, Low Level & Low Noise RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES 4.55±0.2 3.5±0.2 ? Power dissipation ? PCM : 0.4 W Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V 0.43+0.08 –0.07 46+0.1 0. –0.1 Operating & storage junction temperature (1.27 Typ.) O O Tj, Tstg : - 55 C ~ + 150 C 1: Emitter +0.2 1.25–0.2 2: Base 1 2 3 3: Collector 2.54±0.1 O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 50 V Ic= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=50 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE=35V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 ?A DC cur

1.20. s9014w.pdf Size:263K _secos

9014
9014
S9014W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE Complementary to S9015W A L 3 3 Top View C B 1 1 2 2 K E PACKAGING INFORMATION Weight: 0.0074 g D Collector H J F G 3 Millimeter Millimeter REF. REF. Min. Max. Min. Max. MARKING CODE 1 A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. Base C 1.15 1.35 J 0.08 0.25 J6 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. 2 F 0.20 0.40 Emitter ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 5 V Collector Current – Continuous IC 100 mA Collector Power Dissipation PC 200 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) Parameter Symbol Min.

1.21. cd9014.pdf Size:176K _cdil

9014
9014
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD9014 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 50 V Collector -Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Collector Power Dissipation PC 625 mW Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Emitter Voltage VCEO IC=1mA, IB=0 50 - - V Collector -Base Voltage VCBO IC=100uA, IE=0 50 - - V Emitter Base Voltage VEBO IE=100uA, IC=0 5.0 - - V Collector Cut off Current ICBO VCB=50V, IE=0 - - 50 nA Emitter Cut off Current IEBO VEB=5V, IC=0 - - 50 nA DC Current Gain hFE IC=1mA,VCE=5V 60 - 1000 Collector Emitter Saturation Voltage VCE(Sat) IC=100mA,IB=5mA - - 0.30 V Emitter Base Saturation Voltage VBE(Sa

1.22. cmbt9014.pdf Size:128K _cdil

9014
9014
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT9014 PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 30 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Collector Dissipation PC 250 mW Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Base Voltage VCBO IC=100uA, IE=0 30 - - V Collector -Emitter Voltage VCEO IC=1mA, IB=0 30 - - V Emitter Base Voltage VEBO IE=100uA, IC=0 5.0 - - V Collector Cut off Current ICBO VCB=30V, IE=0 - - 15 nA Emitter Cut off Current IEBO VEB=5V, IC=0 - - 500 nA DC Current Gain hFE IC=1mA, VCE=5V 150 - 1000 Collector Emitter Saturati

1.23. ktc9014.pdf Size:349K _kec

9014
9014
SEMICONDUCTOR KTC9014 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS ·Low Noise :NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX ·Complementary to KTC9015. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25?) H J 14.00 + 0.50 K 0.55 MAX F F CHARACTERISTIC SYMBOL RATING UNIT L 2.30 M 0.45 MAX VCBO N 1.00 Collector-Base Voltage 60 V 1 2 3 VCEO Collector-Emitter Voltage 50 V 1. EMITTER 2. BASE VEBO Emitter-Base Voltage 5 V 3. COLLECTOR IC Collector Current 150 mA IE Emitter Current -150 mA TO-92 (F) PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=50V, IE=0 Collector Cut-off Current - - 50 nA IEBO VEB=

1.24. ktc9014s.pdf Size:396K _kec

9014
9014
SEMICONDUCTOR KTC9014S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity _ A 2.93 0.20 + B 1.30+0.20/-0.15 : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). C 1.30 MAX 2 Low Noise :NF=1dB(Typ.) at f=1kHz. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Complementary to KTC9015S. 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 MAXIMUM RATING (Ta=25 ) P 7 CHARACTERISTIC SYMBOL RATING UNIT M VCBO Collector-Base Voltage 60 V 1. EMITTER VCEO Collector-Emitter Voltage 50 V 2. BASE VEBO Emitter-Base Voltage 5 V 3. COLLECTOR IC Collector Current 150 mA IE Emitter Current -150 mA SOT-23 PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BD ELECTRICAL CHARACTERISTICS (Ta=25

1.25. ktc9014a.pdf Size:343K _kec

9014
9014
SEMICONDUCTOR KTC9014A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS ·Low Noise :NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX ·Complementary to KTC9015A. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25?) H J 14.00 + 0.50 K 0.55 MAX F F CHARACTERISTIC SYMBOL RATING UNIT L 2.30 M 0.45 MAX VCBO N 1.00 Collector-Base Voltage 60 V 1 2 3 VCEO Collector-Emitter Voltage 50 V 1. EMITTER 2. BASE VEBO Emitter-Base Voltage 5V 3. COLLECTOR IC Collector Current 150 mA IE Emitter Current -150 mA TO-92 (F) PC Collector Power Dissipation 400 mW Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=50V, IE=0 Collector Cut-off Current - - 50 nA IEBO VEB

1.26. s9014.pdf Size:821K _htsemi

9014
9014
S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING: J6 unless otherwise noted) MAXIMUM RATINGS (TA=25? Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE=35V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 ?A DC current gain hFE VCE=5V, IC= 1mA 200 1000 Collector-emitte

1.27. s9014w.pdf Size:458K _htsemi

9014
9014
S901 4W TRANSISTOR(NPN) SOT–323 FEATURES ? Complementary to S9015W ? Small Surface Mount Package MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO 2. EMITTER V Collector-Emitter Voltage 45 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Current 100 mA P Collector Power Dissipation 200 mW C R Thermal Resistance From Junction To Ambient 625 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100µA, I =0 50 V (BR)CBO C E Collector-emitter breakdown voltage V I =100µA, I =0 45 V (BR)CEO C B Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current I V =50V, I =0 100 nA CBO CB E Collector cut-off current I V =35V, I =0 100 nA CEO CE B Emitter cu

1.28. s9014.pdf Size:241K _gsme

9014
9014
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9014 FEATURES ¦FEATURES ?? FEATURES Excellent HFE Linearity HFE ??????:HFE(0.1mA)/ hFE(2mA)=0.95(Typ.) High HFE ? HFE:HFE=200?700 Low Noise ???:NF=1dB(Typ.),10dB(Max.). Complementary to GM9015 ? GM9015 ?? MAXIMUM RATINGS (Ta=25 ) ¦MAXIMUM RATINGS (Ta=25?) ????? MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage VCBO 50 Vdc ???-???? Collector-Emitter Voltage VCEO 45 Vdc ???-????? Emitter-Base Voltage VEBO 5.0 Vdc ???-???? Collector Current-Continuous Ic 150 mAdc ?????-?? Base Current IB 30 mAdc ???? Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM9014=J6 GM9014=J6 GM9014=J6 ? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Mic

1.29. s9014_to-92.pdf Size:190K _lge

9014
9014
S9014(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.45 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 ?A Collector cut-off current ICEO VCE=35V, IB=0 0.1 ?A Emitter cut

1.30. s9014_sot-23.pdf Size:198K _lge

9014
9014
S9014 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9015 MARKING: J6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE=35V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 ?A DC current gain hFE VCE

1.31. s9014.pdf Size:824K _wietron

9014
9014
S9014 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 45 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 100 mAdc PD 0.4 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55 to +150 Storage, Temperature Tstg C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) V(BR)CEO 45 Vdc Collector-Base Breakdown Voltage (IC= 100uAdc, IB=0) V(BR)CBO 50 - Vdc Vdc V(BR)EBO 5.0 - Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) - ICBO uAdc 0.1 Collector Cutoff Current (V = 50 Vdc, IE=0) CB - IEBO d Emitter Cutoff Current (VEB= 3.0V c, I =0) 0.1 uAdc C WEITRON http://www.weitron.com.tw S9014 WEITRON WEITR ON Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristi

1.32. s9014lt1.pdf Size:191K _wietron

9014
9014
S9014LT1 3 1 2 SOT-23 Value V CEO 45 50 5.0 100 225 1.8 556 S9014QLT1=14Q S9014RLT1=14R S9014SLT1=14S S9014TLT1=14T 0.1 45 50 100 100 u 0.1 40 0.1 u 3.0 WEITRON 1/ 28-Apr-2011 http://www.weitron.com.tw S9014LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain hFE 1000 150 - (IC=1.0 mAdc, V CE=5.0 Vdc) Collector-Emitter Saturation Voltage VCE(sat) - Vdc 0.3 (I C=100 mAdc, I B=5.0mAdc) CLASSIFICATION OF h FE Rank Q R S T Range 150-300 200-400 300-600 400-1000 SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 D E 0.46 1.00 G E G 1.70 2.10 H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L L 0.30 0.61 J M M 0.076 0.25 WEITRON 2/ 28-Apr-2011 http://www.weitron.com.tw S9014LT1 STATIC CHARACTERISTIC DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDT

1.33. 9014qlt1_9014rlt1_9014slt1_9014tlt1.pdf Size:305K _willas

9014
9014
FM120-M WILLAS 9014xLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H NPN Silicon • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. FEATURE • High current capability, low forward voltage drop. • High surge capabi9015. lity. Complementary to • Guardring for overvoltage protection. We declare that the material of product compliance with RoHS requirements. 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" SOT– 23 Halogen free

1.34. he9014.pdf Size:57K _hsmc

9014
9014
Spec. No. : HE6102 HI-SINCERITY Issued Date : 1992.08.25 Revised Date : 2005.02.04 MICROELECTRONICS CORP. Page No. : 1/5 HE9014 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9014 is designed for use in pre-amplifier of low level and low noise. TO-92 Features • High Total Power Dissipation (PD: 450mW) • Complementary to HE9015 • High hFE and Good Linearity Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 450 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to

1.35. btc9014a3.pdf Size:143K _cystek

9014
9014
Spec. No. : C202A3 Issued Date : 2008.01.16 CYStech Electronics Corp. Revised Date : Page No. : 1 / 4 General Purpose NPN Epitaxial Planar Transistor BTC9014A3 Description • The BTC9014A3 is designed for use in pre-amplifier of low level and low noise. • Complementary to BTA9015A3. • Pb-free package Symbol Outline BTC9014A3 TO-92 B:Base C:Collector E:Emitter E B C Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA Base Current IB 20 mA Power Dissipation @Ta=25℃ Pd 450 mW Thermal Resistance, Junction to Ambient RθJA 278 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTC9014A3 CYStek Product Specification Spec. No. : C202A3 Issued Date : 2008.01.16 CYStech Electronics Corp. Revised Date : Page No. : 2 / 4 Characteristics (Ta=25°C) Symbol Min

1.36. s9014.pdf Size:280K _can-sheng

9014
9014
TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors FEATURES High total power dissipation.(PC=0.45W) TO-92 High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS 1.EMITTER Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units 2.BASE VCBO Collector-Base Voltage 50 V VCBO VCBO VCBO 3.COLLECTOR VCEO Collector-Emitter Voltage 45 V VCEO VCEO VCEO 1 2 3 VEBO Emitter-Base Voltage 5 V VEBO VEBO VEBO IC Collector Current -Continuous 0.1 A IC IC IC PC Collector Power Dissipation 0.45 W PC PC PC TJ Junction Temperature 150 TJ TJ TJ ℃ Tstg Storage Temperature -55-150 Tstg Tstg Tstg ℃ ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless other

1.37. s9014_sot-23.pdf Size:317K _can-sheng

9014
9014
 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) FEATURES Complimentary to S9015 MARKING:J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Voltage (集电极-基极电压) 50 V VCEO Collector-Emitter Voltage (集电极-发射极电压) 45 V VEBO Emitter-Base Voltage (发射极-基极电压) 5 V IC Collector Current -Continuous (集电极电流) 0.1 A PC Collector Power Dissipation (耗散功率) 0.2 W Tj Junction Temperature (结温) 150 ℃ Tstg Storage Temperature (储存温度) -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT (参数名称) (符号) (测试条件) (最小值) (典型值)

1.38. 9014w.pdf Size:658K _blue-rocket-elect

9014
9014
9014W(BR3DG9014W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-323 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9015W(BR3CG9015W)互补。 C FE High PC and hFE, excellent hFE linearity, complementary pair with 9015W(BR3CG9015W). 用途 / Applications 用于低电平、低噪声的前置放大器。 Low frequency, low noise pre-amplifier. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector 印章代码 / Marking hFE Classifications A B C D Symbol hFE Range 60~150 100~300 200~600 400~1000 Marking HJ6A HJ6B HJ6C HJ6D http://www.fsbrec.com 1 / 6 9014W(BR3DG9014W) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage

1.39. 9014t.pdf Size:463K _blue-rocket-elect

9014
9014
9014T(BR3DG9014T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features P 大,h 高而且特性好,与 9015T(BR3CG9015T)互补。 C FE High PC and hFE excellent hFE linearity, complementary pair with 9015T(BR3CG9015T). 用途 / Applications 用于低电平、低噪声的前置放大器。 Low frequency, low noise amplifier. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 1 2 3 PIN1:Base PIN 2:Collector PIN 3:Emitter 印章代码 / Marking hFE Classifications B C A D Symbol hFE Range 400~1000 60~150 100~300 200~600 HJ6A HJ6B HJ6C HJ6D Marking http://www.fsbrec.com 1 / 6 ** ** ** ** 9014T(BR3DG9014T) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 50 V Collector to Em

1.40. 9014m.pdf Size:680K _blue-rocket-elect

9014
9014
9014M(BR3DG9014M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9015M(BR3CG9015M)互补。 C FE High PC and hFE, excellent hFE linearity, complementary pair with 9015M(BR3CG9015M). 用途 / Applications 用于低电平、低噪声的前置放大器。 low frequency, low noise pre-amplifier. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector 放大及印章代码 / hFE Classifications & Marking hFE Classifications A B C D Symbol hFE Range 60~150 100~300 200~600 400~1000 Marking HJ6A HJ6B HJ6C HJ6D http://www.fsbrec.com 1 / 6 9014M(BR3DG9014M) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 50 V Coll

1.41. pj2n9014.pdf Size:100K _promax-johnton

9014
9014
PJ2N9014 NPN Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE • High total power dissipation (PT=450mW) TO-92 SOT-23 • High h and good linearity FE • Complementary to PJ2N9015 ABSOLUTE MAXIMUM RATINGS (Ta= 25 °C) Rating Symbol Value Uint Pin : 1. Emitter Pin : 1. Base 2. Base Collector Base Voltage V 50 V 2.Emitter CBO 3. Collector 3.Collector Collector Emitter Voltage V 45 V CEO Emitter Base Voltage V 5 V EBO ORDERING INFORMATION Collector Current Ic 100 mA Collector Dissipation Pc 450 mW Device Operating Temperature Package PJ2N9014CT TO-92 Junction Temperature Tj 150 °C -20℃~+85℃ PJ2N9014CX SOT-23 Storage Temperature Tstg -55 ~150 °C ELECTRICAL CHARACTERISTICS (Ta= 25 °C) Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BV I = 100μA , I =0 50 V CBO C E Collector-Emitter Breakdown Voltage BV I = 1mA , I =0 45 V CEO C B Emitter-Base Breakdown Voltag

1.42. l9014qlt1g.pdf Size:105K _lrc

9014
9014
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE L9014QLT1G Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L9014QLT1G S-L9014QLT1G 14Q 3000/Tape&Reel 1 L9014QLT3G S-L9014QLT3G 14Q 10000/Tape&Reel 2 14R 3000/Tape&Reel L9014RLT1G S-L9014RLT1G SOT– 23 L9014RLT3G S-L9014RLT3G 14R 10000/Tape&Reel L9014SLT1G S-L9014SLT1G 14S 3000/Tape&Reel L9014SLT3G S-L9014SLT3G 14S 10000/Tape&Reel COLLECTOR 3 L9014TLT1G S-L9014TLT1G 14T 3000/Tape&Reel L9014TLT3G S-L9014TLT3G 14T 10000/Tape&Reel 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 5V Coll

1.43. l9014tlt1g.pdf Size:99K _lrc

9014
9014
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Complementary to L9014. L9014QLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9014QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L9014QLT1G S-L9014QLT1G 14Q 3000/Tape&Reel 1 L9014QLT3G S-L9014QLT3G 14Q 10000/Tape&Reel 2 14R 3000/Tape&Reel L9014RLT1G S-L9014RLT1G SOT– 23 L9014RLT3G S-L9014RLT3G 14R 10000/Tape&Reel L9014SLT1G S-L9014SLT1G 14S 3000/Tape&Reel L9014SLT3G S-L9014SLT3G 14S 10000/Tape&Reel COLLECTOR 3 L9014TLT1G S-L9014TLT1G 14T 3000/Tape&Reel L9014TLT3G S-L9014TLT3G 14T 10000/Tape&Reel 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 5V Coll

1.44. l9014slt1g.pdf Size:98K _lrc

9014
9014
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014QLT1G FEATURE Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 3 L9014QLT1G S-L9014QLT1G 14Q 3000/Tape&Reel L9014QLT3G S-L9014QLT3G 1 14Q 10000/Tape&Reel 2 14R 3000/Tape&Reel L9014RLT1G S-L9014RLT1G SOT– 23 L9014RLT3G S-L9014RLT3G 14R 10000/Tape&Reel L9014SLT1G S-L9014SLT1G 14S 3000/Tape&Reel L9014SLT3G S-L9014SLT3G 14S 10000/Tape&Reel COLLECTOR L9014TLT1G S-L9014TLT1G 14T 3000/Tape&Reel 3 L9014TLT3G S-L9014TLT3G 14T 10000/Tape&Reel 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 5V Collec

1.45. l9014rlt1g.pdf Size:99K _lrc

9014
9014
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Complementary to L9014. L9014QLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9014QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L9014QLT1G S-L9014QLT1G 14Q 3000/Tape&Reel 1 L9014QLT3G S-L9014QLT3G 14Q 10000/Tape&Reel 2 14R 3000/Tape&Reel L9014RLT1G S-L9014RLT1G SOT– 23 L9014RLT3G S-L9014RLT3G 14R 10000/Tape&Reel L9014SLT1G S-L9014SLT1G 14S 3000/Tape&Reel L9014SLT3G S-L9014SLT3G 14S 10000/Tape&Reel COLLECTOR 3 L9014TLT1G S-L9014TLT1G 14T 3000/Tape&Reel L9014TLT3G S-L9014TLT3G 14T 10000/Tape&Reel 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 5V Coll

1.46. s9014.pdf Size:347K _shenzhen-tuofeng-semi

9014
9014
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25℃) Collector current ICM: 0.1 A 1 2 3 Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 50 V (BR)CBO Ic= 100µA, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 45 V (BR)CEO B Emitter-base breakdown voltage V 5 V (BR)EBO I =100µA, I =0 E C Collector cut-off current ICBO VCB=50V, IE=0 0.1 µA Collector cut-off current I V =35V, I =0 0.1 CEO CE B µA Emitter cut-off current I V = 3V, I =0 0.1 EBO EB C µA DC current gain h V =5V, I = 1mA 60 1000 FE CE C Collector-emitter saturation voltage

1.47. s9014lt1.pdf Size:588K _shenzhen-tuofeng-semi

9014
9014
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9014LT1 TRANSISTOR( NPN ) FEATURES · High total power dissipation.(pc=0.2w) ·Complementary to S9015LT1 MARKING: L6 J6 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Dissipation 0.2 W TJ, Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 μA Collector cut-off current ICEO VCE=35V , IB=0 0.1 μA Emitter c

See also transistors datasheet: 9012G , 9012H , 9013 , 9013D , 9013E , 9013F , 9013G , 9013H , 2N60C , 9014D , 9014E , 9014F , 9014G , 9014H , 9015 , 9015A , 9015B .

Keywords

 9014 Datasheet  9014 Datenblatt  9014 RoHS  9014 Distributor
 9014 Application Notes  9014 Component  9014 Circuit  9014 Schematic
 9014 Equivalent  9014 Cross Reference  9014 Data Sheet  9014 Fiche Technique

 

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com