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9015
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List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
9015 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

9015 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 9015

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.315

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 3.5

Forward current transfer ratio (hFE), min: 64

Noise Figure, dB: -

Package of 9015 transistor: TO92

9015 Equivalent Transistors - Cross-Reference Search

9015 PDF doc:

1.1. ss9015.pdf Size:41K _fairchild_semi

9015
9015
SS9015 Low Frequency, Low Noise Amplifier Complement to SS9014 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA PC Collector Power Dissipation 450 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = -100A, IE =0 -50 V BVCEO Collector-Emitter Breakdown Voltage IC = -1mA, IB =0 -45 V BVEBO Emitter-Base Breakdown Voltage IE = -100A, IC =0 -5 V ICBO Collector Cut-off Current VCB = -50V, IE =0 -50 nA IEBO Emitter Cut-off Current VEB = -5V, IC =0 -50 nA hFE DC Current Gain VCE = -5V, IC = -1mA 60 1000 VCE (sat) Collector-Base Saturation Voltage IC = -10

1.2. ss9015.pdf Size:59K _samsung

9015
9015
SS9015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW NOISE AMPLIFIER TO-92 Complement to SS9014 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 mA Collector Current IC -100 mW Collector Dissipation PC 450 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC = -100 , IE =0 -50 V Collector-Emitter Breakdown Voltage BVCEO IC = -1mA, IB =0 -45 V Emitter-Base Breakdown Voltage BVEBO IE = -100 , IC =0 V -5 Collector Cut-off Current ICBO VCB = -50V, IE =0 -50 nA Emitter Cut-off Current IEBO VEB = -5V, IC =0 -50 nA DC Current Gain hFE VCE = -5V, IC = -1mA 60 200 600 Collector-Base Saturation Voltage VCE (sat) IC = -100mA, IB = -5mA -0.2 -0.7 IC = -100mA, I

1.3. sts9015.pdf Size:97K _auk

9015
9015
STS9015 Semiconductor Semiconductor PNP Silicon Transistor Description • General purpose application. • Switching application. Features • Excellent hFE linearity : hFE(IC=0.1mA) / hFE(IC=2mA) = 0.95(Typ.) • Low noise : NF = 10dB(Max.) • Complementary pair with STS9014 Ordering Information Type NO. Marking Package Code STS9015 STS9015 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector KST-9018-000 1 4.5 ± 0.1 14.0 ± 0.40 0.38 1.20 ± 0.1 STS9015 Absolute maximum ratings (Ta=25° °C) ° ° Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -50 V Emitter-Base voltage VEBO -5 V Collector current IC -150 mA Emitter current IE 150 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta

1.4. s9015.pdf Size:228K _secos

9015
9015
S9015 PNP Silicon Elektronische Bauelemente Low Frequency, Low Noise Amplifier RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector ? Dim Min Max 3 3 ? A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 ? C 0.890 1.110 2 Base PCM : 0.2 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM : -0.1 A A Emitter H 0.013 0.100 L Collector-base voltage J 0.085 0.177 3 V(BR)CBO : -50 V K 0.450 0.600 S Top View B Operating & storage junction temperature 12 L 0.890 1.020 O O Tj, Tstg : - 55 C ~ + 150 C S 2.100 2.500 V G V 0.450 0.600 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V V (BR)CBO Ic= -100µA, I =0 -50 E Collector-emitter breakdown voltage V Ic= -0.1mA, I =0 -45 V (BR)CEO B Emitter-base breakdown voltage V -5 V (BR)EBO I =-100µA, I =0 E C Collect

1.5. s9015t.pdf Size:597K _secos

9015
9015
S9015T -0.1A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. High Total Power Dissipation.(PC=0.45W) High hFE and Good Linearity CLASSIFICATION OF hFE Product-Rank S9015T-A S9015T-B S9015T-C S9015T-D Range 60~150 100~300 200~600 400~1000 1 Emitter 1 1 1 2 Base 2 2 2 3 Collector 3 3 Collector 3 3 2 Millimeter Millimeter REF. REF. Base Min. Max. Min. Max. A 4.40 4.70 F 0.30 0.51 B 4.30 4.70 G 1.27 TYP. C 12.70 - H 1.10 1.40 1 D 3.30 3.81 J 2.42 2.66 Emitter E 0.36 0.56 K 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -45 V Emitter to Base Voltage V -5 V EBO Collector Current - Continuous I -0.1 A C Collector Power Dissipation P

1.6. cmbt9015.pdf Size:130K _cdil

9015
9015
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9015 SOT-23 PIN CONFIGURATION (PNP) 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 30 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Collector Dissipation PC 250 mW Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Base Voltage VCBO IC=100uA, IE=0 30 - - V Collector -Emitter Voltage VCEO IC=1mA, IB=0 30 - - V Emitter Base Voltage VEBO IE=100uA, IC=0 5.0 - - V Collector Cut off Current ICBO VCB=30V, IE=0 - - 15 nA Emitter Cut off Current IEBO VEB=5V, IC=0 - - 500 nA DC Current Gain hFE IC=1mA, VCE=5V 150 - 1000 Collector Emitter Saturat

1.7. cd9015.pdf Size:165K _cdil

9015
9015
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CD9015 TO-92 CBE ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 50 V Collector -Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 100 mA Collector Power Dissipation PC 625 mW Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Emitter Voltage VCEO IC=1mA, IB=0 50 - - V Collector -Base Voltage VCBO IC=100uA, IE=0 50 - - V Emitter Base Voltage VEBO IE=100uA, IC=0 5.0 - - V Collector Cut off Current ICBO VCB=50V, IE=0 - - 50 nA Emitter Cut off Current IEBO VEB=5V, IC=0 - - 50 nA DC Current Gain hFE IC=1mA,VCE=5V 60 - 1000 Collector Emitter Saturation Voltage VCE(Sat) IC=100mA,IB=5mA - - 0.70 V Emitter Base Saturation Voltage VBE(Sa

1.8. ktc9015.pdf Size:27K _kec

9015
9015
SEMICONDUCTOR KTC9015 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). N DIM MILLIMETERS Low Noise :NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX Complementary to KTC9014. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25 ) H J 14.00 + 0.50 K 0.55 MAX F F CHARACTERISTIC SYMBOL RATING UNIT L 2.30 M 0.45 MAX N 1.00 VCBO -50 V Collector-Base Voltage 1 2 3 VCEO -50 V Collector-Emitter Voltage 1. EMITTER 2. BASE VEBO Emitter-Base Voltage -5 V 3. COLLECTOR IC Collector Current -150 mA IE Emitter Current 150 mA TO-92 PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-50V, IE=0 Collector Cut-off Current - - -50 nA IEBO VEB=-5V, IC

1.9. ktc9015a.pdf Size:344K _kec

9015
9015
SEMICONDUCTOR KTC9015A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). N DIM MILLIMETERS ·Low Noise :NF=1dB(Typ.) at f=1kHz. A 4.70 MAX E K B 4.80 MAX ·Complementary to KTC9014A. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25?) H J 14.00 + 0.50 K 0.55 MAX F F CHARACTERISTIC SYMBOL RATING UNIT L 2.30 M 0.45 MAX VCBO N 1.00 Collector-Base Voltage -50 V 1 2 3 VCEO Collector-Emitter Voltage -50 V 1. EMITTER 2. BASE VEBO Emitter-Base Voltage -5 V 3. COLLECTOR IC Collector Current -150 mA IE Emitter Current 150 mA TO-92 (F) PC Collector Power Dissipation 400 mW Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-50V, IE=0 Collector Cut-off Current - - -50 nA

1.10. ktc9015s.pdf Size:396K _kec

9015
9015
SEMICONDUCTOR KTC9015S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity _ A 2.93 0.20 + B 1.30+0.20/-0.15 : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). C 1.30 MAX 2 Low Noise :NF=1dB(Typ.) at f=1kHz. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Complementary to KTC9014S. 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 MAXIMUM RATING (Ta=25 ) P 7 CHARACTERISTIC SYMBOL RATING UNIT M VCBO -50 V Collector-Base Voltage 1. EMITTER VCEO -50 V Collector-Emitter Voltage 2. BASE VEBO Emitter-Base Voltage -5 V 3. COLLECTOR IC Collector Current -150 mA IE Emitter Current 150 mA SOT-23 PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BE ELECTRICAL CHARACTERISTICS (T

1.11. 2sa9015.pdf Size:86K _usha

9015
9015
Transistors 2SA9015

1.12. s9015.pdf Size:642K _htsemi

9015
9015
S901 5 TRANSISTOR(PNP) SOT-23 FEATURES 1. BASE Complementary to S9014 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO -50 V IC= -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC = -0.1mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100?A, IC=0 Collector cut-off current ICBO VCB=-50 V, IE=0 -0.1 ?A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 ?A DC current gain hFE VCE=-5V, IC= -1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=-10

1.13. s9015w.pdf Size:456K _htsemi

9015
9015
S901 5W TRANSISTOR(PNP) SOT–323 FEATURES ? Small Surface Mount Package ? High DC Current Gain MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -50 V CBO 2. EMITTER V Collector-Emitter Voltage -45 V CEO 3. COLLECTOR V Emitter-Base Voltage -5 V EBO IC Collector Current -100 mA P Collector Power Dissipation 200 mW C R Thermal Resistance From Junction To Ambient 625 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100µA, I =0 -50 V (BR)CBO C E Collector-emitter breakdown voltage V I =-100µA, I =0 -45 V (BR)CEO C B Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current I V =-50V, I =0 -100 nA CBO CB E Emitter cut-off current I V =-5V, I =0 -100 nA EBO EB C DC

1.14. s9015.pdf Size:241K _gsme

9015
9015
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9015 FEATURES ¦FEATURES ?? FEATURES Excellent HFE Linearity HFE ??????:hFE(0.1mA)/ hFE(2mA)=0.95(Typ.) Low Noise ???:NF=1dB(Typ.),10db(Max.). Complementary to GM9014 ? GM9014 ?? MAXIMUM RATINGS (Ta=25 ) ¦MAXIMUM RATINGS (Ta=25?) ????? MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage VCBO -50 Vdc ???-???? Collector-Emitter Voltage VCEO -45 Vdc ???-????? Emitter-Base Voltage VEBO -5.0 Vdc ???-???? Collector Current-Continuous Ic -150 mAdc ?????-?? Base Current IB -30 mAdc ???? Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM9015=M6 GM9015=M6 GM9015=M6 ? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd.

1.15. s9015_sot-23.pdf Size:185K _lge

9015
9015
S9015 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9014 MARKING: M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO -50 V IC= -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC = -0.1mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100?A, IC=0 Collector cut-off current ICBO VCB=-50 V, IE=0 -0.1 ?A Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 ?A DC current gain hFE VCE=-5V, IC= -1mA 200 1000 Collec

1.16. s9015_to-92.pdf Size:176K _lge

9015
9015
S9015(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9014 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.45 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO -50 V IC= -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100?A, IC=0 Collector cut-off current ICBO VCB=-50V, IE=0 -0.05 ?A Emitter cut-off current IEBO VEB= -5V,

1.17. s9015lt1.pdf Size:203K _wietron

9015
9015
S9015LT1 PNP 3 1 2 SOT-23 Value V CEO -45 -50 -5 -100 225 1.8 556 S9015QLT1=15Q S9015RLT1=15R S9015SLT1=15S -0.1 -45 -40 -100 -5.0 -100 u -0.1 -40 -0.1 u -3.0 WEITRON 1/ 28-Apr-2011 http://www.weitron.com.tw S9015LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain hFE 600 150 (IC=-1.0 mAdc, VCE=-5.0 Vdc) - Collector-Emitter Saturation Voltage VCE(sat) - Vdc -0.3 (I C=-100 mAdc, IB=-5mAdc) CLASSIFICATION OF h FE Q R Rank S Range 300-600 150-300 200-400 SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 D E 0.46 1.00 G E G 1.70 2.10 H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L L 0.30 0.61 J M M 0.076 0.25 WEITRON 2/ 28-Apr-2011 http://www.weitron.com.tw S9015LT1 STATIC CHARACTERISTIC BASE-EMITTER VOLTAGE DC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT BASE-

1.18. s9015.pdf Size:921K _wietron

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S9015 PNP General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -45 Vdc Collector-Base Voltage VCBO -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC 100 mAdc PD 0.4 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55 to +150 Storage, Temperature Tstg C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= -1 mAdc, IB=0) V(BR)CEO -45 Vdc Collector-Base Breakdown Voltage (IC= -100uAdc, IE=0) V(BR)CBO -50 - Vdc - Vdc V(BR)EBO -5.0 Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) - ICBO uAdc -0.05 Collector Cutoff Current (V = -50 Vdc, IE=0) CB - IEBO d Emitter Cutoff Current (VEB= -5.0V c, I =0) -0.05 uAdc C WEITRON http://www.weitron.com.tw S9015 WEITRON WEITR ON Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)

1.19. he9015.pdf Size:53K _hsmc

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Spec. No. : HE6101 HI-SINCERITY Issued Date : 1992.08.25 Revised Date : 2005.02.04 MICROELECTRONICS CORP. Page No. : 1/5 HE9015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE9015 is designed for use in pre-amplifier of low level and low noise. TO-92 Features • High Total Power Dissipation (PD: 450mW) • Complementary to HE9014 • High hFE and Good Linearity Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 450 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to

See also transistors datasheet: 9013G , 9013H , 9014 , 9014D , 9014E , 9014F , 9014G , 9014H , BC546 , 9015A , 9015B , 9015C , 9015D , 9016 , 9016D , 9016E , 9016F .

Keywords

 9015 Datasheet  9015 Datenblatt  9015 RoHS  9015 Distributor
 9015 Application Notes  9015 Component  9015 Circuit  9015 Schematic
 9015 Equivalent  9015 Cross Reference  9015 Data Sheet  9015 Fiche Technique

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