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100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
9018 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

9018 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 9018

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.315

Maximum collector-base voltage |Ucb|, V: 15

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 700

Collector capacitance (Cc), pF: 3

Forward current transfer ratio (hFE), min: 64

Noise Figure, dB: -

Package of 9018 transistor: TO92

9018 Equivalent Transistors - Cross-Reference Search

9018 PDF doc:

1.1. ss9018.pdf Size:40K _fairchild_semi

9018
9018
SS9018 AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC =100A, IE =0 30 V BVCEO Collector-Emitter Breakdown Voltage IC =1.0mA, IB =0 15 V BVEBO Emitter-Base Breakdown Voltage IE =100A, IC =0 5 V ICBO Collector Cut-off Current VCB =12V, IE =0 50 nA hFE Emitter Cut-off Current VCE =5V, IC =1.0mA 28 100 198 VCE (sat) Collector-Emitter Saturation Voltage IC =10mA, IB =1m

1.2. ss9018.pdf Size:48K _samsung

9018
9018
SS9018 NPN EPITAXIAL SILICON TRANSISTOR AM/FM AMPLIFIER, LOCAL OSCILLATOR TO-92 OF FM/VHF TUNER High Current Gain Bandwidth Product fT=1,100 MHz (Typ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 mA Collector Current IC 50 mW Collector Dissipation PC 400 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC =100 , IE =0 30 V Collector-Emitter Breakdown Voltage BVCEO IC =1.0mA, IB =0 15 V Emitter-Base Breakdown Voltage BVEBO IE =100 , IC =0 V 5 Collector Cut-off Current ICBO VCB =12V, IE =0 50 nA Emitter Cut-off Current hFE VCE =5V, IC =1.0mA 28 100 198 Collector-Emitter Saturation Voltage VCE (sat) IC =10mA, IB =1mA 0.5 V Output Capacitance COB VCB =10V, IE

1.3. utc9018.pdf Size:11K _utc

9018
9018
UTC 9018 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 9018 is designed for use in AM/FM if amplifier and local oscillator of FM/VHF tuner. TO-92 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 V Collector Current IC 50 mA Base Current IB 10 mA Storage Temperature TSTG -55 ~ +150 C Junction Temperature Tj 150 C ELECTRICAL CHARACTERISTICS(Ta=25C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=100uA 30 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA 15 V Emitter-Base Breakdown Voltage BVEBO IE=100uA 5.0 V Collector Cut-Off Current ICBO VCB=12V 50 nA Collector-Emitter Saturation Voltage VCE(SAT) IC=10mA, IB=1mA 0.5 V DC Current Gain hFE VCE=5V, IC=1mA 39 198 Current Gain Bandwidth Product fT VCE=5V, IC=5mA 700 1100 MHz Output Capacitance Cob VCB=10V, IE=0 1.3 1.7 pF CLASSIFI

1.4. sts9018.pdf Size:232K _auk

9018
9018
STS9018 NPN Silicon Transistor Description PIN Connection • High frequency low noise amplifier application C • VHF band amplifier application B Features • Low noise figure : NF = 4dB(Max.) at f=100MHz • High transition frequency fT = 800MHz(Typ.) E TO-92 Ordering Information Type NO. Marking Package Code STS9018 STS9018 TO-92 Absolute maximum ratings Ta=25°C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 40 V Collector-Emitter voltage VCEO 30 V Emitter-Base voltage VEBO 4 V Collector current IC 20 mA Emitter current IE -20 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics Ta=25°C Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB=40V, IE=0 - - 0.1 ?A Emitter cut-off current IEBO VEB=4V, IC=0 - - 0.1 ?A DC current gain hFE* VCE=5V, IC=1mA 54 - 198 - Transistor frequency fT VCE=10V

1.5. s9018t.pdf Size:105K _secos

9018
9018
S9018T NPN Plastic-Encapsulate Transistors RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURE Power dissipation o P CM : 0.4 W (Tamb= 2 5 C) Collector current CM: 0.05 A I 0.43+0.08 –0.07 Collector-base voltage 46+0.1 0. –0.1 V(BR)CBO : 25 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter +0.2 1.25–0.2 2: Base 1 2 3 stg: Tj, T -55 oC to +150 oC 3: Collector 2.54±0.1 o ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) 25 V CBO Ic= 100µA, I =0 E Collector-emitter breakdown voltage V(BR) Ic= 0. 1mA, I =0 18 V CEO B Emitter-base breakdown voltage V(BR) 4 V EBO I = 100µA, I =0 E C Collector cut-off current ICBO VCB= 20V, IE=0 0.1 µA Collector cut-off current I V = 15V, I =0 0.1 CEO CE B µA Emitter cut-off current I V = 3V, I =0 0.1 EBO

1.6. s9018w.pdf Size:296K _secos

9018
9018
S9018W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE AM/FM Amplifier, Local Oscillator of FM/VHF Tuner A L High Current Gain Bandwidth Product fT = 1.1 GHz (Typ) 3 3 Top View C B 1 1 2 2 K E PACKAGING INFORMATION D Weight: 0.0074 g H J F G Collector 3 Millimeter Millimeter REF. REF. Min. Max. Min. Max. MARKING CODE 1 A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. Base C 1.15 1.35 J 0.08 0.25 J8 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. 2 F 0.20 0.40 Emitter ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 5 V Collector Current – Continuous IC 50 mA Collector Power Dissipation PC 200 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRI

1.7. s9018.pdf Size:208K _secos

9018
9018
S9018 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector ? Dim Min Max 3 3 ? A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 ? C 0.890 1.110 2 Base PCM : 0.2 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM : 0.05 A A Emitter H 0.013 0.100 L Collector-base voltage J 0.085 0.177 3 V(BR)CBO : 25 V K 0.450 0.600 S Top View B Operating & storage junction temperature 12 L 0.890 1.020 O O Tj, Tstg : - 55 C ~ + 150 C S 2.100 2.500 V G V 0.450 0.600 All Dimension in mm C H J D K ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 25 V Ic= 100µA, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 18 V (BR)CEO B Emitter-base breakdown voltage V 4 V (BR)EBO I =100µA, I =0 E C Collector cut-off curren

1.8. cd9018.pdf Size:236K _cdil

9018
9018
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD 9018 TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS ( Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 15 V VCBO Collector Base Voltage 30 V VEBO Emitter Base Voltage 5V IC Collector Current 30 mA PD Power Dissipation 400 mW Tj Junction Temperature 125 ?C Tstj Temperature Range -55 to + 125 ?C ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION VALUE UNIT BVCEO IC=3mA Collector Emitter Breakdown Voltage >15 V BVCBO Collector Base Breakdown Voltage IC=10µA >30 V BVEBO Emitter Base Breakdown Voltage IE=10µA, >5 V ICBO VCB=15V Collector Cut off Current <50 nA IEBO VBE=3V Emitter Cut off Current <100 nA hFE VCE=5V,IC=1mA DC Current Gain CD9018D 29-44 CD9018E 40-59 CD9018F 54-80 CD9018G 72-108 CD9018H 97-146 CD9018I 132-198 CD9018J 18

1.9. ktc9018.pdf Size:34K _kec

9018
9018
SEMICONDUCTOR KTC9018 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B C FEATURES ·Small Reverse Transfer Capacitance : Cre=0.65pF(Typ.). N DIM MILLIMETERS ·Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. A 4.70 MAX E K B 4.80 MAX ·High Transition Frequency : fT=800MHz(Typ.). G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25?) H J 14.00 + 0.50 K 0.55 MAX F F CHARACTERISTIC SYMBOL RATING UNIT L 2.30 M 0.45 MAX VCBO N 1.00 Collector-Base Voltage 40 V 1 2 3 VCEO Collector-Emitter Voltage 30 V 1. EMITTER 2. BASE VEBO Emitter-Base Voltage 4 V 3. COLLECTOR IC Collector Current 20 mA IE Emitter Current -20 mA TO-92 625 PC* Collector Power Dissipation mW 400 Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST

1.10. ktc9018s.pdf Size:402K _kec

9018
9018
SEMICONDUCTOR KTC9018S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. E L B L FEATURES DIM MILLIMETERS Small Reverse Transfer Capacitance _ A 2.93 0.20 + B 1.30+0.20/-0.15 : Cre=0.65pF(Typ.). C 1.30 MAX 2 Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 High Transition Frequency : fT=800MHz(Typ.). 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 MAXIMUM RATING (Ta=25 ) P 7 CHARACTERISTIC SYMBOL RATING UNIT M VCBO Collector-Base Voltage 40 V 1. EMITTER VCEO Collector-Emitter Voltage 30 V 2. BASE VEBO Emitter-Base Voltage 4 V 3. COLLECTOR IC Collector Current 20 mA IE Emitter Current -20 mA SOT-23 PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Ty

1.11. s9018w.pdf Size:303K _htsemi

9018
9018
S9018W TRASISTOR(NPN) SOT–323 FEATURES ? Small Surface Mount Package MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBO 1. BASE V Collector-Emitter Voltage 15 V CEO 2. EMITTER V Emitter-Base Voltage 5 V EBO 3. COLLECTOR I Collector Current 50 mA C PC Collector Power Dissipation 200 mW R Thermal Resistance From Junction To Ambient 625 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100µA, I =0 30 V (BR)CBO C E Collector-emitter breakdown voltage V I =1mA, I =0 15 V (BR)CEO C B Emitter-base breakdown voltage V I =100µA, I =0 5 V (BR)EBO E C Collector cut-off current I V =12V, I =0 50 nA CBO CB E Collector cut-off current ICEO VCE=12V, IB=0 100 nA Emitter cut-off current I V =3V, I =0 100 nA

1.12. s9018.pdf Size:452K _htsemi

9018
9018
S9018 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MARKING:J8 MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (T =25? unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO 30 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 15 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=12V, IE=0 0.05 ?A Collector cut-off current ICEO VCE=12V, IB=0 0.1 ?A Emitter cut-off current IEBO

1.13. s9018.pdf Size:278K _gsme

9018
9018
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9018 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO 20 Vdc ???????? Collector-Base Voltage VCBO 30 Vdc ??????? Emitter-Base Voltage VEBO 5.0 Vdc ??????? Collector Current-Continuous Ic 50 mAdc ?????-?? THERMAL CHARACTERISTICS ¦THERMAL CHARACTERISTICS ??? THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ?? ???? ?? ??? PD Total Device Dissipation ????? 225 mW FR-5 Board(1) TA=25?????? 25? 1.8 mW/? Derate above25? ?? 25??? PD Total Device Dissipation ????? 300 mW Alumina Substrate ?????,(2)TA=25? Derate above25??? 25??? 2.4 mW/? Thermal Resistance Junction to Ambient R ?JA 417 ?/W ?? Junction and Storage Temperature TJ,Tstg -55to+150? ??????? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM9018

1.14. s9018_to-92.pdf Size:167K _lge

9018
9018
S9018(NPN) TO-92 Bipolar Transistors 1. TO-92 EMITTER 2. BASE 3. COLLECTOR Features High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 0.4 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC= 0. 1mA, IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 4 V Collector cut-off current ICBO VCB= 20V, IE=0 0.1 ?A Collector cut-off current ICEO VCE=15V,IB=0 0.1 ?A Emitter cut-off current IEBO VEB=3V, IC=0 0

1.15. s9018.pdf Size:277K _lge

9018
9018
S9018 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MARKING:J8 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 30 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 15 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=12V, IE=0 0.05 ?A Collector cut-off current ICEO VCE=12V, IB=0 0

See also transistors datasheet: 9015D , 9016 , 9016D , 9016E , 9016F , 9016H , 9016I , 9017 , BC147 , 9018D , 9018E , 9018F , 9018H , 9018I , 9020 , 9021 , 9022 .

Keywords

 9018 Datasheet  9018 Datenblatt  9018 RoHS  9018 Distributor
 9018 Application Notes  9018 Component  9018 Circuit  9018 Schematic
 9018 Equivalent  9018 Cross Reference  9018 Data Sheet  9018 Fiche Technique

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