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9018
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9018
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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BU104
BU104D .. BU921ZP
BU921ZPFI .. BUP49
BUP50 .. BUW131
BUW131A .. BUY30
BUY32-100 .. CCS2008GF
CCS2053 .. CG040D
CG040E .. CK477
CK4A .. CP500
CP501 .. CSA1316GR
CSA1357 .. CSC1740
CSC1740S .. CSD786Q
CSD786R .. D26E1
D26E2 .. D40N2
D40N3 .. D60T4040
D60T4050 .. DSL12AW
DSS20200L .. DTA143ZE
DTA143ZEA .. DTD123YK
DTD143E .. ECG16
ECG160 .. ECG52
ECG53 .. ESM4007
ESM400A .. FCX1051A
FCX1053A .. FJY4004R
FJY4005R .. FMMT918R
FMMT929 .. FX3502
FX3503 .. GD110
GD114 .. GES5818
GES5819 .. GS111B
GS111C .. GT376A
GT383A .. HE9015
HEP637 .. HS5819
HS5820 .. IDI8003
IDI8004 .. JE9112A
JE9112B .. KRA105M
KRA105S .. KRA769E
KRA769U .. KRC841E
KRC841T .. KSB1116A-Y
KSB1116S .. KSC2883-O
KSC2883-Y .. KSD5076
KSD5078 .. KSY82
KT104A .. KT325BM
KT325V .. KT617A
KT618A .. KT8154A
KT8154B .. KT903B
KT904A .. KTB688B
KTB764 .. KTD8303A9
KTD863 .. MCH3105
MCH3106 .. MJ10100
MJ10101 .. MJD44H11-1
MJD44H11T4 .. MJE5982
MJE5983 .. MMBC1009F1
MMBC1009F2 .. MMBT6428
MMBT6428L .. MP115
MP116 .. MP5130
MP5131 .. MPS3391
MPS3391A .. MPSH24
MPSH30 .. MRF947AT3
MRF947BT1 .. NA12FG
NA12FH .. NB013HU
NB013HV .. NB212XH
NB212XI .. NKT13429
NKT135 .. NPS5449
NPS5550 .. NTE22
NTE226 .. OC822
OC823 .. PBSS5320T
PBSS5320X .. PMBT2369
PMBT2907 .. PRF949
PRF957 .. RCA1A18
RCA1A19 .. RN1701JE
RN1702 .. RN2901FS
RN2902 .. S17900
S1805 .. SDT9305
SDT9306 .. SJ5439
SJE1349 .. SRA2219S
SRA2219SF .. STC5608
STC5648 .. SZD4672
SZD5103 .. TA2514
TA2551 .. TIP146
TIP146F .. TIS53
TIS54 .. TN4142
TN4143 .. TPC6602
TPC6603 .. UN1115S
UN1116Q .. UN921M
UNR1110 .. ZT61
ZT62 .. ZTX453
ZTX454 .. ZXTPS718MC
ZXTPS720MC .. ZXTPS720MC
 
9018 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

9018 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 9018

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.315

Maximum collector-base voltage |Ucb|, V: 15

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 700

Collector capacitance (Cc), pF: 3

Forward current transfer ratio (hFE), min: 64

Noise Figure, dB: -

Package of 9018 transistor: TO92

9018 Equivalent Transistors - Cross-Reference Search

9018 PDF doc:

1.1. ss9018.pdf Size:40K _fairchild_semi

9018
9018
SS9018 AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC =100A, IE =0 30 V BVCEO Collector-Emitter Breakdown Voltage IC =1.0mA, IB =0 15 V BVEBO Emitter-Base Breakdown Voltage IE =100A, IC =0 5 V ICBO Collector Cut-off Current VCB =12V, IE =0 50 nA hFE Emitter Cut-off Current VCE =5V, IC =1.0mA 28 100 198 VCE (sat) Collector-Emitter Saturation Voltage IC =10mA, IB =1m

1.2. ss9018.pdf Size:48K _samsung

9018
9018
SS9018 NPN EPITAXIAL SILICON TRANSISTOR AM/FM AMPLIFIER, LOCAL OSCILLATOR TO-92 OF FM/VHF TUNER High Current Gain Bandwidth Product fT=1,100 MHz (Typ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 mA Collector Current IC 50 mW Collector Dissipation PC 400 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC =100 , IE =0 30 V Collector-Emitter Breakdown Voltage BVCEO IC =1.0mA, IB =0 15 V Emitter-Base Breakdown Voltage BVEBO IE =100 , IC =0 V 5 Collector Cut-off Current ICBO VCB =12V, IE =0 50 nA Emitter Cut-off Current hFE VCE =5V, IC =1.0mA 28 100 198 Collector-Emitter Saturation Voltage VCE (sat) IC =10mA, IB =1mA 0.5 V Output Capacitance COB VCB =10V, IE

1.3. utc9018.pdf Size:11K _utc

9018
9018
UTC 9018 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 9018 is designed for use in AM/FM if amplifier and local oscillator of FM/VHF tuner. TO-92 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 V Collector Current IC 50 mA Base Current IB 10 mA Storage Temperature TSTG -55 ~ +150 C Junction Temperature Tj 150 C ELECTRICAL CHARACTERISTICS(Ta=25C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=100uA 30 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA 15 V Emitter-Base Breakdown Voltage BVEBO IE=100uA 5.0 V Collector Cut-Off Current ICBO VCB=12V 50 nA Collector-Emitter Saturation Voltage VCE(SAT) IC=10mA, IB=1mA 0.5 V DC Current Gain hFE VCE=5V, IC=1mA 39 198 Current Gain Bandwidth Product fT VCE=5V, IC=5mA 700 1100 MHz Output Capacitance Cob VCB=10V, IE=0 1.3 1.7 pF CLASSIFI

1.4. 9018.pdf Size:61K _utc

9018
9018
UNISONIC TECHNOLOGIES CO., LTD 9018 NPN EPITAXIAL PLANAR TRANSISTOR AM/FM AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER 1 FEATURES * High Current Gain Bandwidth Product fT =1.1GHz (Typ) TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 9018L-x-T92-B 9018G-x-T92-B TO-92 E B C Tape Box 9018L-x-T92-K 9018G-x-T92-K TO-92 E B C Bulk 9018L-x-T92-R 9018G-x-T92-R TO-92 E B C Tape Reel Note: Pin Assignment: E: EMITTER B: BASE C: COLLECTOR 9018L-x-T92-B (1) B: Tape Box, T: Tape Reel, R: Tape Reel (1)Packing Type (2) T92: TO-92 (2)Package Type (3) x: refer to Classification of Hfe (3)Rank (4) G:Halogen Free, L: Lead Free (4)Lead Free www.unisonic.com.tw 1 of 2 Copyright © 2011 Unisonic Technologies Co., LTD QW-R201-025,Ba 9018 NPN EPITAXIAL PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25?, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collector

1.5. mmbt9018.pdf Size:106K _utc

9018
9018
UNISONIC TECHNOLOGIES CO., LTD MMBT9018 NPN SILICON TRANSISTOR AM/FM AMPLIFIER, LOCAL 3 OSCILLATOR OF FM/VHF TUNER 1 2 SOT-23 ? FEATURES * High Current Gain Bandwidth Product 3 f T = 1.1GHz (Typ) 1 2 SOT-523 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 MMBT9018L-x-AE3-R MMBT9018G-x-AE3-R SOT-23 E B C Tape Reel MMBT9018L-x-AN3-R MMBT9018G-x-AN3-R SOT-523 E B C Tape Reel ? MARKING www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R206-032.D MMBT9018 NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 V Collector Current IC 50 mA SOT-23 225 mW Collector Power Dissipation Pc SOT-523 150 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum

1.6. sts9018.pdf Size:232K _auk

9018
9018
STS9018 NPN Silicon Transistor Description PIN Connection • High frequency low noise amplifier application C • VHF band amplifier application B Features • Low noise figure : NF = 4dB(Max.) at f=100MHz • High transition frequency fT = 800MHz(Typ.) E TO-92 Ordering Information Type NO. Marking Package Code STS9018 STS9018 TO-92 Absolute maximum ratings Ta=25°C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 40 V Collector-Emitter voltage VCEO 30 V Emitter-Base voltage VEBO 4 V Collector current IC 20 mA Emitter current IE -20 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics Ta=25°C Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB=40V, IE=0 - - 0.1 ?A Emitter cut-off current IEBO VEB=4V, IC=0 - - 0.1 ?A DC current gain hFE* VCE=5V, IC=1mA 54 - 198 - Transistor frequency fT VCE=10V

1.7. s9018t.pdf Size:105K _secos

9018
9018
S9018T NPN Plastic-Encapsulate Transistors RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURE Power dissipation o P CM : 0.4 W (Tamb= 2 5 C) Collector current CM: 0.05 A I 0.43+0.08 –0.07 Collector-base voltage 46+0.1 0. –0.1 V(BR)CBO : 25 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter +0.2 1.25–0.2 2: Base 1 2 3 stg: Tj, T -55 oC to +150 oC 3: Collector 2.54±0.1 o ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) 25 V CBO Ic= 100µA, I =0 E Collector-emitter breakdown voltage V(BR) Ic= 0. 1mA, I =0 18 V CEO B Emitter-base breakdown voltage V(BR) 4 V EBO I = 100µA, I =0 E C Collector cut-off current ICBO VCB= 20V, IE=0 0.1 µA Collector cut-off current I V = 15V, I =0 0.1 CEO CE B µA Emitter cut-off current I V = 3V, I =0 0.1 EBO

1.8. s9018w.pdf Size:296K _secos

9018
9018
S9018W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE AM/FM Amplifier, Local Oscillator of FM/VHF Tuner A L High Current Gain Bandwidth Product fT = 1.1 GHz (Typ) 3 3 Top View C B 1 1 2 2 K E PACKAGING INFORMATION D Weight: 0.0074 g H J F G Collector 3 Millimeter Millimeter REF. REF. Min. Max. Min. Max. MARKING CODE 1 A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. Base C 1.15 1.35 J 0.08 0.25 J8 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. 2 F 0.20 0.40 Emitter ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 5 V Collector Current – Continuous IC 50 mA Collector Power Dissipation PC 200 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRI

1.9. s9018.pdf Size:208K _secos

9018
9018
S9018 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector ? Dim Min Max 3 3 ? A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 ? C 0.890 1.110 2 Base PCM : 0.2 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM : 0.05 A A Emitter H 0.013 0.100 L Collector-base voltage J 0.085 0.177 3 V(BR)CBO : 25 V K 0.450 0.600 S Top View B Operating & storage junction temperature 12 L 0.890 1.020 O O Tj, Tstg : - 55 C ~ + 150 C S 2.100 2.500 V G V 0.450 0.600 All Dimension in mm C H J D K ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 25 V Ic= 100µA, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 18 V (BR)CEO B Emitter-base breakdown voltage V 4 V (BR)EBO I =100µA, I =0 E C Collector cut-off curren

1.10. cd9018.pdf Size:236K _cdil

9018
9018
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD 9018 TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS ( Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 15 V VCBO Collector Base Voltage 30 V VEBO Emitter Base Voltage 5V IC Collector Current 30 mA PD Power Dissipation 400 mW Tj Junction Temperature 125 ?C Tstj Temperature Range -55 to + 125 ?C ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION VALUE UNIT BVCEO IC=3mA Collector Emitter Breakdown Voltage >15 V BVCBO Collector Base Breakdown Voltage IC=10µA >30 V BVEBO Emitter Base Breakdown Voltage IE=10µA, >5 V ICBO VCB=15V Collector Cut off Current <50 nA IEBO VBE=3V Emitter Cut off Current <100 nA hFE VCE=5V,IC=1mA DC Current Gain CD9018D 29-44 CD9018E 40-59 CD9018F 54-80 CD9018G 72-108 CD9018H 97-146 CD9018I 132-198 CD9018J 18

1.11. ktc9018.pdf Size:34K _kec

9018
9018
SEMICONDUCTOR KTC9018 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B C FEATURES ·Small Reverse Transfer Capacitance : Cre=0.65pF(Typ.). N DIM MILLIMETERS ·Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. A 4.70 MAX E K B 4.80 MAX ·High Transition Frequency : fT=800MHz(Typ.). G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25?) H J 14.00 + 0.50 K 0.55 MAX F F CHARACTERISTIC SYMBOL RATING UNIT L 2.30 M 0.45 MAX VCBO N 1.00 Collector-Base Voltage 40 V 1 2 3 VCEO Collector-Emitter Voltage 30 V 1. EMITTER 2. BASE VEBO Emitter-Base Voltage 4 V 3. COLLECTOR IC Collector Current 20 mA IE Emitter Current -20 mA TO-92 625 PC* Collector Power Dissipation mW 400 Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST

1.12. ktc9018s.pdf Size:402K _kec

9018
9018
SEMICONDUCTOR KTC9018S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. E L B L FEATURES DIM MILLIMETERS Small Reverse Transfer Capacitance _ A 2.93 0.20 + B 1.30+0.20/-0.15 : Cre=0.65pF(Typ.). C 1.30 MAX 2 Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 High Transition Frequency : fT=800MHz(Typ.). 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 MAXIMUM RATING (Ta=25 ) P 7 CHARACTERISTIC SYMBOL RATING UNIT M VCBO Collector-Base Voltage 40 V 1. EMITTER VCEO Collector-Emitter Voltage 30 V 2. BASE VEBO Emitter-Base Voltage 4 V 3. COLLECTOR IC Collector Current 20 mA IE Emitter Current -20 mA SOT-23 PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Ty

1.13. s9018w.pdf Size:303K _htsemi

9018
9018
S9018W TRASISTOR(NPN) SOT–323 FEATURES ? Small Surface Mount Package MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBO 1. BASE V Collector-Emitter Voltage 15 V CEO 2. EMITTER V Emitter-Base Voltage 5 V EBO 3. COLLECTOR I Collector Current 50 mA C PC Collector Power Dissipation 200 mW R Thermal Resistance From Junction To Ambient 625 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100µA, I =0 30 V (BR)CBO C E Collector-emitter breakdown voltage V I =1mA, I =0 15 V (BR)CEO C B Emitter-base breakdown voltage V I =100µA, I =0 5 V (BR)EBO E C Collector cut-off current I V =12V, I =0 50 nA CBO CB E Collector cut-off current ICEO VCE=12V, IB=0 100 nA Emitter cut-off current I V =3V, I =0 100 nA

1.14. s9018.pdf Size:452K _htsemi

9018
9018
S9018 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MARKING:J8 MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (T =25? unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO 30 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 15 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=12V, IE=0 0.05 ?A Collector cut-off current ICEO VCE=12V, IB=0 0.1 ?A Emitter cut-off current IEBO

1.15. s9018.pdf Size:278K _gsme

9018
9018
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9018 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO 20 Vdc ???????? Collector-Base Voltage VCBO 30 Vdc ??????? Emitter-Base Voltage VEBO 5.0 Vdc ??????? Collector Current-Continuous Ic 50 mAdc ?????-?? THERMAL CHARACTERISTICS ¦THERMAL CHARACTERISTICS ??? THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ?? ???? ?? ??? PD Total Device Dissipation ????? 225 mW FR-5 Board(1) TA=25?????? 25? 1.8 mW/? Derate above25? ?? 25??? PD Total Device Dissipation ????? 300 mW Alumina Substrate ?????,(2)TA=25? Derate above25??? 25??? 2.4 mW/? Thermal Resistance Junction to Ambient R ?JA 417 ?/W ?? Junction and Storage Temperature TJ,Tstg -55to+150? ??????? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM9018

1.16. s9018_to-92.pdf Size:167K _lge

9018
9018
S9018(NPN) TO-92 Bipolar Transistors 1. TO-92 EMITTER 2. BASE 3. COLLECTOR Features High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 0.4 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC= 0. 1mA, IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 4 V Collector cut-off current ICBO VCB= 20V, IE=0 0.1 ?A Collector cut-off current ICEO VCE=15V,IB=0 0.1 ?A Emitter cut-off current IEBO VEB=3V, IC=0 0

1.17. s9018.pdf Size:277K _lge

9018
9018
S9018 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MARKING:J8 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 30 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 15 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=12V, IE=0 0.05 ?A Collector cut-off current ICEO VCE=12V, IB=0 0

See also transistors datasheet: 9015D , 9016 , 9016D , 9016E , 9016F , 9016H , 9016I , 9017 , BC147 , 9018D , 9018E , 9018F , 9018H , 9018I , 9020 , 9021 , 9022 .

Keywords

 9018 Datasheet  9018 Datenblatt  9018 RoHS  9018 Distributor
 9018 Application Notes  9018 Component  9018 Circuit  9018 Schematic
 9018 Equivalent  9018 Cross Reference  9018 Data Sheet  9018 Fiche Technique

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