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9018
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9018
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List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
9018 All Transistors Datasheet. Power MOSFET, IGBT, IC, Triacs Database. Semiconductor Catalog
 

9018 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 9018

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.315

Maximum collector-base voltage |Ucb|, V: 15

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 135

Transition frequency (ft), MHz: 700

Collector capacitance (Cc), pF: 3

Forward current transfer ratio (hFE), min: 64

Noise Figure, dB: -

Package of 9018 transistor: TO92

9018 Equivalent Transistors - Cross-Reference Search

9018 PDF doc:

1.1. ss9018.pdf Size:40K _fairchild_semi

9018
9018
SS9018 AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC =100A, IE =0 30 V BVCEO Collector-Emitter Breakdown Voltage IC =1.0mA, IB =0 15 V BVEBO Emitter-Base Breakdown Voltage IE =100A, IC =0 5 V ICBO Collector Cut-off Current VCB =12V, IE =0 50 nA hFE Emitter Cut-off Current VCE =5V, IC =1.0mA 28 100 198 VCE (sat) Collector-Emitter Saturation Voltage IC =10mA, IB =1m

1.2. ss9018.pdf Size:48K _samsung

9018
9018
SS9018 NPN EPITAXIAL SILICON TRANSISTOR AM/FM AMPLIFIER, LOCAL OSCILLATOR TO-92 OF FM/VHF TUNER High Current Gain Bandwidth Product fT=1,100 MHz (Typ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 mA Collector Current IC 50 mW Collector Dissipation PC 400 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC =100 , IE =0 30 V Collector-Emitter Breakdown Voltage BVCEO IC =1.0mA, IB =0 15 V Emitter-Base Breakdown Voltage BVEBO IE =100 , IC =0 V 5 Collector Cut-off Current ICBO VCB =12V, IE =0 50 nA Emitter Cut-off Current hFE VCE =5V, IC =1.0mA 28 100 198 Collector-Emitter Saturation Voltage VCE (sat) IC =10mA, IB =1mA 0.5 V Output Capacitance COB VCB =10V, IE

1.3. utc9018.pdf Size:11K _utc

9018
9018
UTC 9018 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 9018 is designed for use in AM/FM if amplifier and local oscillator of FM/VHF tuner. TO-92 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 V Collector Current IC 50 mA Base Current IB 10 mA Storage Temperature TSTG -55 ~ +150 C Junction Temperature Tj 150 C ELECTRICAL CHARACTERISTICS(Ta=25C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=100uA 30 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA 15 V Emitter-Base Breakdown Voltage BVEBO IE=100uA 5.0 V Collector Cut-Off Current ICBO VCB=12V 50 nA Collector-Emitter Saturation Voltage VCE(SAT) IC=10mA, IB=1mA 0.5 V DC Current Gain hFE VCE=5V, IC=1mA 39 198 Current Gain Bandwidth Product fT VCE=5V, IC=5mA 700 1100 MHz Output Capacitance Cob VCB=10V, IE=0 1.3 1.7 pF CLASSIFI

1.4. mmbt9018.pdf Size:106K _utc

9018
9018
UNISONIC TECHNOLOGIES CO., LTD MMBT9018 NPN SILICON TRANSISTOR AM/FM AMPLIFIER, LOCAL 3 OSCILLATOR OF FM/VHF TUNER 1 2 SOT-23 ? FEATURES * High Current Gain Bandwidth Product 3 f T = 1.1GHz (Typ) 1 2 SOT-523 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 MMBT9018L-x-AE3-R MMBT9018G-x-AE3-R SOT-23 E B C Tape Reel MMBT9018L-x-AN3-R MMBT9018G-x-AN3-R SOT-523 E B C Tape Reel ? MARKING www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R206-032.D MMBT9018 NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 V Collector Current IC 50 mA SOT-23 225 mW Collector Power Dissipation Pc SOT-523 150 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum

1.5. 9018.pdf Size:61K _utc

9018
9018
UNISONIC TECHNOLOGIES CO., LTD 9018 NPN EPITAXIAL PLANAR TRANSISTOR AM/FM AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER 1 FEATURES * High Current Gain Bandwidth Product fT =1.1GHz (Typ) TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 9018L-x-T92-B 9018G-x-T92-B TO-92 E B C Tape Box 9018L-x-T92-K 9018G-x-T92-K TO-92 E B C Bulk 9018L-x-T92-R 9018G-x-T92-R TO-92 E B C Tape Reel Note: Pin Assignment: E: EMITTER B: BASE C: COLLECTOR 9018L-x-T92-B (1) B: Tape Box, T: Tape Reel, R: Tape Reel (1)Packing Type (2) T92: TO-92 (2)Package Type (3) x: refer to Classification of Hfe (3)Rank (4) G:Halogen Free, L: Lead Free (4)Lead Free www.unisonic.com.tw 1 of 2 Copyright © 2011 Unisonic Technologies Co., LTD QW-R201-025,Ba 9018 NPN EPITAXIAL PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25?, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collector

1.6. sts9018.pdf Size:232K _auk

9018
9018
STS9018 NPN Silicon Transistor Description PIN Connection • High frequency low noise amplifier application C • VHF band amplifier application B Features • Low noise figure : NF = 4dB(Max.) at f=100MHz • High transition frequency fT = 800MHz(Typ.) E TO-92 Ordering Information Type NO. Marking Package Code STS9018 STS9018 TO-92 Absolute maximum ratings Ta=25°C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 40 V Collector-Emitter voltage VCEO 30 V Emitter-Base voltage VEBO 4 V Collector current IC 20 mA Emitter current IE -20 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics Ta=25°C Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB=40V, IE=0 - - 0.1 ?A Emitter cut-off current IEBO VEB=4V, IC=0 - - 0.1 ?A DC current gain hFE* VCE=5V, IC=1mA 54 - 198 - Transistor frequency fT VCE=10V

1.7. s9018w.pdf Size:296K _secos

9018
9018
S9018W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE AM/FM Amplifier, Local Oscillator of FM/VHF Tuner A L High Current Gain Bandwidth Product fT = 1.1 GHz (Typ) 3 3 Top View C B 1 1 2 2 K E PACKAGING INFORMATION D Weight: 0.0074 g H J F G Collector 3 Millimeter Millimeter REF. REF. Min. Max. Min. Max. MARKING CODE 1 A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. Base C 1.15 1.35 J 0.08 0.25 J8 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. 2 F 0.20 0.40 Emitter ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 5 V Collector Current – Continuous IC 50 mA Collector Power Dissipation PC 200 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRI

1.8. s9018.pdf Size:208K _secos

9018
9018
S9018 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector ? Dim Min Max 3 3 ? A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 ? C 0.890 1.110 2 Base PCM : 0.2 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM : 0.05 A A Emitter H 0.013 0.100 L Collector-base voltage J 0.085 0.177 3 V(BR)CBO : 25 V K 0.450 0.600 S Top View B Operating & storage junction temperature 12 L 0.890 1.020 O O Tj, Tstg : - 55 C ~ + 150 C S 2.100 2.500 V G V 0.450 0.600 All Dimension in mm C H J D K ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 25 V Ic= 100µA, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 18 V (BR)CEO B Emitter-base breakdown voltage V 4 V (BR)EBO I =100µA, I =0 E C Collector cut-off curren

1.9. s9018t.pdf Size:105K _secos

9018
9018
S9018T NPN Plastic-Encapsulate Transistors RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURE Power dissipation o P CM : 0.4 W (Tamb= 2 5 C) Collector current CM: 0.05 A I 0.43+0.08 –0.07 Collector-base voltage 46+0.1 0. –0.1 V(BR)CBO : 25 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter +0.2 1.25–0.2 2: Base 1 2 3 stg: Tj, T -55 oC to +150 oC 3: Collector 2.54±0.1 o ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) 25 V CBO Ic= 100µA, I =0 E Collector-emitter breakdown voltage V(BR) Ic= 0. 1mA, I =0 18 V CEO B Emitter-base breakdown voltage V(BR) 4 V EBO I = 100µA, I =0 E C Collector cut-off current ICBO VCB= 20V, IE=0 0.1 µA Collector cut-off current I V = 15V, I =0 0.1 CEO CE B µA Emitter cut-off current I V = 3V, I =0 0.1 EBO

1.10. cd9018.pdf Size:236K _cdil

9018
9018
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD 9018 TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS ( Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 15 V VCBO Collector Base Voltage 30 V VEBO Emitter Base Voltage 5V IC Collector Current 30 mA PD Power Dissipation 400 mW Tj Junction Temperature 125 ?C Tstj Temperature Range -55 to + 125 ?C ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION VALUE UNIT BVCEO IC=3mA Collector Emitter Breakdown Voltage >15 V BVCBO Collector Base Breakdown Voltage IC=10µA >30 V BVEBO Emitter Base Breakdown Voltage IE=10µA, >5 V ICBO VCB=15V Collector Cut off Current <50 nA IEBO VBE=3V Emitter Cut off Current <100 nA hFE VCE=5V,IC=1mA DC Current Gain CD9018D 29-44 CD9018E 40-59 CD9018F 54-80 CD9018G 72-108 CD9018H 97-146 CD9018I 132-198 CD9018J 18

1.11. ktc9018s.pdf Size:402K _kec

9018
9018
SEMICONDUCTOR KTC9018S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. E L B L FEATURES DIM MILLIMETERS Small Reverse Transfer Capacitance _ A 2.93 0.20 + B 1.30+0.20/-0.15 : Cre=0.65pF(Typ.). C 1.30 MAX 2 Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 High Transition Frequency : fT=800MHz(Typ.). 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 MAXIMUM RATING (Ta=25 ) P 7 CHARACTERISTIC SYMBOL RATING UNIT M VCBO Collector-Base Voltage 40 V 1. EMITTER VCEO Collector-Emitter Voltage 30 V 2. BASE VEBO Emitter-Base Voltage 4 V 3. COLLECTOR IC Collector Current 20 mA IE Emitter Current -20 mA SOT-23 PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Ty

1.12. ktc9018.pdf Size:34K _kec

9018
9018
SEMICONDUCTOR KTC9018 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B C FEATURES ·Small Reverse Transfer Capacitance : Cre=0.65pF(Typ.). N DIM MILLIMETERS ·Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. A 4.70 MAX E K B 4.80 MAX ·High Transition Frequency : fT=800MHz(Typ.). G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25?) H J 14.00 + 0.50 K 0.55 MAX F F CHARACTERISTIC SYMBOL RATING UNIT L 2.30 M 0.45 MAX VCBO N 1.00 Collector-Base Voltage 40 V 1 2 3 VCEO Collector-Emitter Voltage 30 V 1. EMITTER 2. BASE VEBO Emitter-Base Voltage 4 V 3. COLLECTOR IC Collector Current 20 mA IE Emitter Current -20 mA TO-92 625 PC* Collector Power Dissipation mW 400 Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST

1.13. 2sc9018.pdf Size:77K _usha

9018
9018
Transistors 2SC9018 This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.

1.14. s9018w.pdf Size:303K _htsemi

9018
9018
S9018W TRASISTOR(NPN) SOT–323 FEATURES ? Small Surface Mount Package MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBO 1. BASE V Collector-Emitter Voltage 15 V CEO 2. EMITTER V Emitter-Base Voltage 5 V EBO 3. COLLECTOR I Collector Current 50 mA C PC Collector Power Dissipation 200 mW R Thermal Resistance From Junction To Ambient 625 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100µA, I =0 30 V (BR)CBO C E Collector-emitter breakdown voltage V I =1mA, I =0 15 V (BR)CEO C B Emitter-base breakdown voltage V I =100µA, I =0 5 V (BR)EBO E C Collector cut-off current I V =12V, I =0 50 nA CBO CB E Collector cut-off current ICEO VCE=12V, IB=0 100 nA Emitter cut-off current I V =3V, I =0 100 nA

1.15. s9018.pdf Size:452K _htsemi

9018
9018
S9018 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MARKING:J8 MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (T =25? unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO 30 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 15 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=12V, IE=0 0.05 ?A Collector cut-off current ICEO VCE=12V, IB=0 0.1 ?A Emitter cut-off current IEBO

1.16. s9018.pdf Size:278K _gsme

9018
9018
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9018 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO 20 Vdc ???????? Collector-Base Voltage VCBO 30 Vdc ??????? Emitter-Base Voltage VEBO 5.0 Vdc ??????? Collector Current-Continuous Ic 50 mAdc ?????-?? THERMAL CHARACTERISTICS ¦THERMAL CHARACTERISTICS ??? THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ?? ???? ?? ??? PD Total Device Dissipation ????? 225 mW FR-5 Board(1) TA=25?????? 25? 1.8 mW/? Derate above25? ?? 25??? PD Total Device Dissipation ????? 300 mW Alumina Substrate ?????,(2)TA=25? Derate above25??? 25??? 2.4 mW/? Thermal Resistance Junction to Ambient R ?JA 417 ?/W ?? Junction and Storage Temperature TJ,Tstg -55to+150? ??????? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM9018

1.17. s9018_to-92.pdf Size:167K _lge

9018
9018
S9018(NPN) TO-92 Bipolar Transistors 1. TO-92 EMITTER 2. BASE 3. COLLECTOR Features High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 0.4 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC= 0. 1mA, IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 4 V Collector cut-off current ICBO VCB= 20V, IE=0 0.1 ?A Collector cut-off current ICEO VCE=15V,IB=0 0.1 ?A Emitter cut-off current IEBO VEB=3V, IC=0 0

1.18. s9018.pdf Size:277K _lge

9018
9018
S9018 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MARKING:J8 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 30 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 15 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=12V, IE=0 0.05 ?A Collector cut-off current ICEO VCE=12V, IB=0 0

1.19. s9018_sot-23.pdf Size:250K _can-sheng

9018
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 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR (NPN) FEATURES AM/FM Amplifier,Local Oscillator of FM/VHF Tuner MARKING:J8 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Voltage (集电极-基极电压) 30 V VCEO Collector-Emitter Voltage (集电极-发射极电压) 15 V VEBO Emitter-Base Voltage (发射极-基极电压) 5 V IC Collector Current -Continuous (集电极电流) 50 mA PC Collector Power Dissipation (耗散功率) 0.2 W Tj Junction Temperature (结温) 150 ℃ Tstg Storage Temperature (储存温度) -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT (参数名称) (符号) (测试条件) (最

1.20. s9018.pdf Size:268K _can-sheng

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TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES FEATURES TO-92 High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 1.EMITTER MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS 2.BASE Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units VCBO 25 V VCBO VCBO Collector-Base Voltage VCBO 3.COLLECTOR VCEO 18 V VCEO VCEO Collector-Emitter Voltage VCEO 1 2 3 VEBO 4 V VEBO VEBO Emitter-Base Voltage VEBO IC Collector Current -Continuous 50 mA IC IC IC PC Collector Power Dissipation 0.4 W PC PC PC Tj Junction Temperature 150 ℃ Tj Tj Tj Tstg Storage Temperature -55-150 ℃ Tstg Tstg Tstg ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTI

1.21. 9018m.pdf Size:904K _blue-rocket-elect

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9018M(BR3DG9018M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features P 大,f 高,频率飘移小。 C T High Pc and fT,, low frequency shift 用途 / Applications 用于 AM/FM 中放,本机振荡。 AM/FM IF amplifier, local oscillator. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector 放大及印章代码 / hFE Classifications & Marking hFE Classifications D E F G H I Symbol hFE Range 28~45 39~60 54~80 72~108 97~146 132~198 Marking HJ8D HJ8E HJ8F HJ8G HJ8H HJ8I http://www.fsbrec.com 1 / 6 9018M(BR3DG9018M) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage V

1.22. s9018lt1.pdf Size:101K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25℃) 2. 4 Collector current 1. 3 ICM: 0.05 A Collector-base voltage V(BR)CBO: 25 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 25 V (BR)CBO Ic= 100µA, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 18 V (BR)CEO B Emitter-base breakdown voltage V 4 V (BR)EBO I =100µA, I =0 E C Collector cut-off current ICBO VCB=20V, IE=0 0.1 µA Collector cut-off current I V =15V, I =0 0.1 CEO CE B µA Emitter cut-off current I V = 3V, I =0 0.1 EBO EB C µA DC current gain h V =5V, I = 1mA 70 190 FE(1) CE C Collector-emitte

1.23. s9018.pdf Size:1304K _shenzhen-tuofeng-semi

9018
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO – 92 S9018 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.BASE High Current Gain Bandwidth Product 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 0.4 W RθJA Thermal Resistance From Junction To Ambient 312.5 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 4 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 nA Collector cut-off

See also transistors datasheet: 9015D , 9016 , 9016D , 9016E , 9016F , 9016H , 9016I , 9017 , BC147 , 9018D , 9018E , 9018F , 9018H , 9018I , 9020 , 9021 , 9022 .

Keywords

 9018 Datasheet  9018 Design 9018 MOSFET 9018 Power
 9018 RoHS Compliant 9018 Service 9018 Triacs 9018 Semiconductor
 9018 Database 9018 Innovation 9018 IC 9018 Electricity

 

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