2N2562
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2N2562
Material of transistor: Ge
Polarity: PNP
Maximum collector power dissipation (Pc), W: 20
Maximum collector-base voltage |Ucb|, V: 80
Maximum collector-emitter voltage |Uce|, V: 50
Maximum emitter-base voltage |Ueb|, V: 20
Maximum collector current |Ic max|, A: 3.5
Maximum junction temperature (Tj), °C: 100
Transition frequency (ft), MHz: 0.25
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 20
Noise Figure, dB: - Package of 2N2562
transistor: MT27
2N2562
Equivalent Transistors - Cross-Reference Search 2N2562
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. Keywords| 2N2562
Datasheet | 2N2562
Datenblatt | 2N2562
RoHS | 2N2562
Distributor | | 2N2562
Application Notes | 2N2562
Component | 2N2562
Circuit | 2N2562
Schematic | | 2N2562
Equivalent | 2N2562
Cross Reference | 2N2562
Data Sheet | 2N2562
Fiche Technique |
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