AF106 Transistor Datasheet. Parameters and Characteristics.

Type Designator: AF106

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.06

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.01

Maximum junction temperature (Tj), °C: 90

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 0.4

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of AF106 transistor: TO72

AF106 Equivalent Transistors - Cross-Reference Search

AF106 PDF document for downloads:

1.1. af106.pdf Size:182K _siemens

1.2. 101nu70-71_102nu70-71_103nu70-71_104nu70-71_105nu70-71_106nu70-71_107nu70-71_gc507_gc508_gc509_gc515_gc516_gc517_gc518_gc519_gf505_gf506_gf507_af106_af109r_af239_af139.pdf Size:166K _tesla

See also transistors datasheet: ADZ12 , AF101 , AF101BL , AF101-O , AF101V , AF101W , AF102 , AF105 , AC128 , AF106A , AF106N , AF107 , AF108 , AF109 , AF109R , AF110 , AF111 .

Keywords