AF139 Transistor Datasheet. Parameters and Characteristics.

Type Designator: AF139

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.06

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.01

Maximum junction temperature (Tj), °C: 75

Transition frequency (ft), MHz: 275

Collector capacitance (Cc), pF: 0.3

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of AF139 transistor: TO72

AF139 Equivalent Transistors - Cross-Reference Search

AF139 PDF document for downloads:

1.1. af139.pdf Size:200K _siemens

1.2. 101nu70-71_102nu70-71_103nu70-71_104nu70-71_105nu70-71_106nu70-71_107nu70-71_gc507_gc508_gc509_gc515_gc516_gc517_gc518_gc519_gf505_gf506_gf507_af106_af109r_af239_af139.pdf Size:166K _tesla

See also transistors datasheet: AF131 , AF132 , AF133 , AF134 , AF135 , AF136 , AF137 , AF138 , 8550 , AF142 , AF143 , AF144 , AF146 , AF147 , AF148 , AF149 , AF150 .

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