AF171
Transistor Datasheet. Parameters and Characteristics. Type Designator: AF171
Material of transistor: Ge
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.08
Maximum collector-base voltage |Ucb|, V: 24
Maximum collector-emitter voltage |Uce|, V: 0
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.01
Maximum junction temperature (Tj), °C: 75
Transition frequency (ft), MHz: 30
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 100
Noise Figure, dB: - Package of AF171
transistor: TO44
AF171
Equivalent Transistors - Cross-Reference Search AF171
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Datasheet | AF171
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Equivalent | AF171
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