AF257 Transistor Datasheet. Parameters and Characteristics.

Type Designator: AF257

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.03

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 18

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.01

Maximum junction temperature (Tj), °C: 90

Transition frequency (ft), MHz: 170

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 28

Noise Figure, dB: -

Package of AF257 transistor: U21

AF257 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: AF240 , AF240S , AF250 , AF251 , AF252 , AF253 , AF254 , AF256 , BC547 , AF260 , AF261 , AF263 , AF264 , AF265 , AF266 , AF267 , AF268 .

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