AF367 Transistor Datasheet. Parameters and Characteristics.

Type Designator: AF367

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.06

Maximum collector-base voltage |Ucb|, V: 20

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.01

Maximum junction temperature (Tj), °C: 90

Transition frequency (ft), MHz: 350

Collector capacitance (Cc), pF: 0.7

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of AF367 transistor: TO51

AF367 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: AF284V , AF284VI , AF284VII , AF284VIII , AF289 , AF290 , AF306 , AF339 , 2N5551 , AF369 , AF379 , AF426 , AF427 , AF428 , AF429 , AF430 , AF439 .

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