AFY19
Transistor Datasheet. Parameters and Characteristics. Type Designator: AFY19
Material of transistor: Ge
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.8
Maximum collector-base voltage |Ucb|, V: 32
Maximum collector-emitter voltage |Uce|, V: 32
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.3
Maximum junction temperature (Tj), °C: 90
Transition frequency (ft), MHz: 200
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 20
Noise Figure, dB: - Package of AFY19
transistor: TO39
AFY19
Equivalent Transistors - Cross-Reference Search AFY19
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. Keywords| AFY19
Datasheet | AFY19
Datenblatt | AFY19
RoHS | AFY19
Distributor | | AFY19
Application Notes | AFY19
Component | AFY19
Circuit | AFY19
Schematic | | AFY19
Equivalent | AFY19
Cross Reference | AFY19
Data Sheet | AFY19
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