2N2602 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N2602

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.4

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.05

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 40

Collector capacitance (Cc), pF: 6

Forward current transfer ratio (hFE), min: 36

Noise Figure, dB: -

Package of 2N2602 transistor: TO46

2N2602 Equivalent Transistors - Cross-Reference Search

2N2602 PDF document for downloads:

5.1. 2n2608.pdf Size:45K _microsemi

TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/295 Devices Qualified Level 2N2608 JAN ABSOLUTE MAXIMUM RATINGS (T = +250C unless otherwise noted) A Parameters / Test Conditions Symbol Value Units Gate-Source Voltage V 30 V GSS (1) Power Dissipation T = +250C P 300 mW A D 0 Operating Junction & Storage Temperature Range Top, Tstg -65 to +200 C (1) Derate linearly 1.71 mW/0C for T > +250C. TO-18 A (TO-206AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (T = +250C unless otherwise noted) A PARAMETERS / TEST CONDITIONS Symbol Min. Max. Units Gate-Source Breakdown Voltage V = 0, I = 1.0 µAdc V 30 Vdc DS G (BR)GSS Gate Reverse Current V = 0, V = 30 Vdc I 10 ?Adc DS GS GSS V = 0, V = 15 Vdc 7.5 DS GS Drain Current V = 0, V = 5.0 Vdc I -1.0 -5.0 mAdc GS DS DDSS Gate-Source Cutoff Voltage V = 5.0 V, I = 1.0 µAdc VGS(off) 0.75 6.0 Vdc DS D Magnitude of Small-Signal, Common-Source Short-Circuit Fo

5.2. 2n2609.pdf Size:45K _microsemi

TECHNICAL DATA P-CHANNEL J-FET Qualified per MIL-PRF-19500/296 Devices Qualified Level 2N2609 JAN ABSOLUTE MAXIMUM RATINGS (T = +250C unless otherwise noted) A Parameters / Test Conditions Symbol Value Units Gate-Source Voltage V 30 V GSS (1) Power Dissipation T = +250C P 300 mW A D 0 Operating Junction & Storage Temperature Range Top Tstg -65 to +200 C , (1) Derate linearly 1.71 mW/0C for T > +250C. A TO-18 (TO-206AA) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (T = +250C unless otherwise noted) A PARAMETERS / TEST CONDITIONS Symbol Min. Max. Units Gate-Source Breakdown Voltage V = 0, I = 1.0 µAdc V 30 Vdc DS G (BR)GSS Gate Reverse Current VDS = 0, VGS = 30 Vdc IGSS 30 ?Adc VDS = 0, VGS = 15 Vdc 22.5 Drain Current V = 0, V = 5.0 Vdc I -2.0 -10.0 mAdc GS DS DDSS Gate-Source Cutoff Voltage V = 5.0 V, I = 1.0 µAdc VGS(off) 0.75 6.0 Vdc DS D Magnitude of Small-Signal, Common-Source Short-Circuit

5.3. 2n2604_2n2605.pdf Size:54K _microsemi

TECHNICAL DATA PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 Devices Qualified Level JAN, JANTX 2N2604 2N2605 JANTXV MAXIMUM RATINGS Ratings Symbol 2N2604 2N2605 Units Collector-Base Voltage 80 70 Vdc VCBO Collector-Emitter Voltage 60 Vdc VCEO Emitter-Base Voltage 6.0 Vdc VEBO Collector Current 30 mAdc IC Total Power Dissipation @ TA = +250C(1) PT 400 mW/0C 0 Operating & Storage Junction Temperature Range -65 to +200 C TJ, Tstg THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit TO-46* 0 Thermal Resistance, Junction-to-Case 0.437 C/mW R?JC (TO-206AB) 1) Derate linearly 2.28 mW/0C above T = +250C A *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage 80 IC = 10 µAdc 2N2604 V(BR)CBO Vdc 70 2N2605 Collector-Emitter Breakdown Voltage V(BR)CEO 60 Vdc

See also transistors datasheet: 2N2598 , 2N2599 , 2N2599A , 2N26 , 2N260 , 2N2600 , 2N2600A , 2N2601 , 2N3055 , 2N2603 , 2N2604 , 2N2605 , 2N2605A , 2N2605CSM , 2N2605UB , 2N260A , 2N261 .

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