BC108AP Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC108AP

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 5

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of BC108AP transistor: TO92

BC108AP Equivalent Transistors - Cross-Reference Search

BC108AP PDF document for downloads:

5.1. bc107_bc108_bc109.pdf Size:49K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors 1997 Sep 03 Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to the case • General purpose switching and amplification. 3 DESCRIPTION handbook, halfpage 1 2 NPN transistor in a TO-18; SOT18 metal package. 2 PNP complement: BC177. 3 MAM264 1 Fig.1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC107 - 50 V BC108; BC109 - 30 V VCEO collector-emitter voltage open base BC107 - 45 V BC108; BC109 - 20 V ICM peak collector current - 200 mA Ptot total power dissipation Tamb ? 25

5.2. bc107_bc108_bc109_4.pdf Size:49K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors 1997 Sep 03 Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to the case • General purpose switching and amplification. 3 DESCRIPTION handbook, halfpage 1 2 NPN transistor in a TO-18; SOT18 metal package. 2 PNP complement: BC177. 3 MAM264 1 Fig.1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC107 - 50 V BC108; BC109 - 30 V VCEO collector-emitter voltage open base BC107 - 45 V BC108; BC109 - 20 V ICM peak collector current - 200 mA Ptot total power dissipation Tamb ? 25

5.3. bc107-bc108-bc109.pdf Size:100K _st

BC107 BC108-BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case.They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. The complementary PNP types are re- spectively the BC177, BC178 and BC179. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter Unit BC107 BC108 BC109 VCBO Collector-base Voltage (IE =0) 50 30 30 V VCEO Collector-emitter Voltage (IB = 0) 45 20 20 V VEBO Emitter-base Voltage (IC =0) 6 5 5 V IC Collector Current 100 mA Pto t Total Power Dissipation 0.3 W at T ? 25 °C amb 0.75 W at Tcase ? 25 °C Tstg Storage Temperature – 55 to 175 °C T Junction Temperature 175 °C j January 1989 1/7 BC107-BC108-BC109 THERMAL DATA Rth j-case Thermal Resistance Junction-case Max 200 °C/W Rth j-amb Thermal Resistance Junction-ambient Max 500 °C/W ELECTRICAL CHARACT

5.4. bc107-bc108.pdf Size:69K _st

BC107 BC108 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers. The PNP complemet for BC107 is BC177. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BC107 BC108 VCBO Collector-Base Voltage (IE = 0) 50 30 V V Collector-Emitter Voltage (I = 0) 45 20 V CEO B VEBO Emitter-Base Voltage (IC = 0) 6 5 V IC Collector Current 100 mA o P Total Dissipation at T ? 25 C 0.3 W tot amb o at T ? 25 C 0.75 W case o T Storage Temperature -55 to 175 C stg o Tj Max. Operating Junction Temperature 175 C 1/6 November 1997 BC107/BC108 THERMAL DATA o Rthj-case Thermal Resistance Junction-Case Max 200 C/W o Rthj- amb Thermal Resistance Junction-Ambient Max 500 C/W o ELECTRICAL CHARACTERISTICS (Tcase =25 C unless otherwise

5.5. bc107_bc108_bc109.pdf Size:120K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com

5.6. bc107_bc108_bc109_bc147_bc148_bc149.pdf Size:791K _aeg-telefunken

5.7. bc107_bc108_bc109_bc167_bc168_bc169_bc237_bc238_bc239_bc317_bc318_bc319.pdf Size:228K _microelectronics

See also transistors datasheet: BC107C , BC107CP , BC107CQ , BC107CSM , BC107P , BC107QF , BC108 , BC108A , P605 , BC108B , BC108BP , BC108C , BC108CP , BC108CSM , BC108P , BC108QF , BC109 .

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