All Transistors Datasheet



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BC182L
  BC182L
  BC182L
 
BC182L
  BC182L
  BC182L
 
BC182L
  BC182L
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
BC182L All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BC182L Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC182L

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 5

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of BC182L transistor: TO92

BC182L Equivalent Transistors - Cross-Reference Search

BC182L PDF doc:

1.1. bc182l.pdf Size:26K _fairchild_semi

BC182L
BC182L
BC182L NPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current - Continuous 100 mA TJ, TSTG Storage Junction Temperature Range - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = 2mA, IB = 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10A, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100A, IC = 0 6 V ICBO Collector Cut-off Current VCB = 50V, VBE = 0 15 nA IEBO Emitter-Base Leakage Current VEB = 4V, IE = 0 15 nA On Characteristics hFE DC Current Gain VCE = 5V,

1.2. bc182lb.pdf Size:27K _fairchild_semi

BC182L
BC182L
BC182LB NPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current - Continuous 100 mA TJ, TSTG Storage Junction Temperature Range - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = 2mA, IB = 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10A, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100A, IC = 0 6 V ICBO Collector Cut-off Current VCB = 50V, VBE = 0 15 nA IEBO Emitter-Base Leakage Current VEB = 4V, IE = 0 15 nA On Characteristics hFE DC Current Gain VCE = 5V,

5.1. bc182_bc183_bc184.pdf Size:111K _motorola

BC182L
BC182L
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC182/D Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 182 183 184 Rating Symbol Unit CASE 2904, STYLE 17 TO92 (TO226AA) CollectorEmitter Voltage VCEO 50 30 30 Vdc CollectorBase Voltage VCBO 60 45 45 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C PD 350 mW Derate above 25C 2.8 mW/C Total Device Dissipation @ TC = 25C PD 1.0 Watts Derate above 25C 8.0 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 C/W Thermal Resistance, Junction to Case RqJC 125 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage

5.2. bc182b.pdf Size:27K _fairchild_semi

BC182L
BC182L
BC182B NPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current - Continuous 100 mA TJ, TSTG Storage Junction Temperature Range - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = 2mA, IB = 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10A, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10A, IC = 0 6 V ICBO Collector Cut-off Current VCB = 50V, VBE = 0 15 nA IEBO Emitter-Base Leakage Current VEB = 4V, IE = 0 15 nA On Characteristics hFE DC Current Gain VCE = 5V, I

5.3. bc182.pdf Size:47K _fairchild_semi

BC182L
BC182L
BC182 NPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current - Continuous 100 mA TJ, TSTG Storage Junction Temperature Range - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = 2mA, IB = 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10A, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10A, IC = 0 6 V ICBO Collector Cut-off Current VCB = 50V, VBE = 0 15 nA IEBO Emitter-Base Leakage Current VEB = 4V, IE = 0 15 nA On Characteristics hFE DC Current Gain VCE = 5V, IC

5.4. bc182-b.pdf Size:60K _onsemi

BC182L
BC182L
BC182, BC182B Amplifier Transistors NPN Silicon Features http://onsemi.com These are Pb-Free Devices* COLLECTOR 1 2 BASE MAXIMUM RATINGS 3 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO 50 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc TO-92 Collector Current - Continuous IC 100 mAdc CASE 29 Total Device Dissipation @ TA = 25C PD 350 mW STYLE 17 Derate above 25C 2.8 mW/C 1 Total Device Dissipation @ TC = 25C PD 1.0 W 1 2 2 Derate above 25C 8.0 mW/C 3 3 STRAIGHT LEAD BENT LEAD Operating and Storage Junction TJ, Tstg -55 to +150 C BULK PACK TAPE & REEL Temperature Range AMMO PACK THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 357 C/W Thermal Resistance, Junction-to-Case RqJC 125 C/W BC Stresses exceeding Maximum Ratings may damage the device. Maximum 182B Ratings are stress ratings only. Functional operation above the Recommen

5.5. bc182_bc183_bc184.pdf Size:112K _cdil

BC182L
BC182L
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC182, A, B NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC183, A, B, C BC184, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with E B "T" C Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC182 BC183 BC184 UNITS Collector Emitter Voltage VCEO 50 30 30 V Collector Base Voltage VCBO 60 45 45 V Emitter Base Voltage VEBO 6.0 V Collector Current Continuous IC 100 mA Power Dissipation at Ta=25?C PD 350 mW Derate Above 25?C 2.8 mW/?C Power Dissipation at Tc=25?C PD 1.0 W Derate Above 25?C 8.0 mW/?C Operating And Storage Junction Tj, Tstg - 55 to +150 ?C Temperature Range THERMAL RESISTANCE Junction to Case Rth (j-c) 125 ?C/W Junction to Ambient in free air Rth (j-a) 357 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector Emitter Volt

See also transistors datasheet: BC182 , BC182A , BC182AP , BC182B , BC182BP , BC182K , BC182KA , BC182KB , BC639 , BC182LA , BC182LB , BC183 , BC183A , BC183AP , BC183B , BC183BP , BC183C .

Keywords

 BC182L Datasheet  BC182L Datenblatt  BC182L RoHS  BC182L Distributor
 BC182L Application Notes  BC182L Component  BC182L Circuit  BC182L Schematic
 BC182L Equivalent  BC182L Cross Reference  BC182L Data Sheet  BC182L Fiche Technique

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