All Transistors Datasheet



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BC184
  BC184
  BC184
 
BC184
  BC184
  BC184
 
BC184
  BC184
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
BC184 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BC184 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC184

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 5

Forward current transfer ratio (hFE), min: 240

Noise Figure, dB: -

Package of BC184 transistor: TO226

BC184 Equivalent Transistors - Cross-Reference Search

BC184 PDF doc:

1.1. bc182_bc183_bc184.pdf Size:111K _motorola

BC184
BC184
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC182/D Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 182 183 184 Rating Symbol Unit CASE 2904, STYLE 17 TO92 (TO226AA) CollectorEmitter Voltage VCEO 50 30 30 Vdc CollectorBase Voltage VCBO 60 45 45 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C PD 350 mW Derate above 25C 2.8 mW/C Total Device Dissipation @ TC = 25C PD 1.0 Watts Derate above 25C 8.0 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 C/W Thermal Resistance, Junction to Case RqJC 125 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage

1.2. bc184c.pdf Size:25K _fairchild_semi

BC184
BC184
BC184C Silicon NPN Small Signal Transistor (Note 1) BVCEO = 30V (Min.) hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 500 mA PC Collector Dissipation (Ta=25C) (Note 2, 3) 350 mW TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Voltage IC = 10A45 V BVCEO Collector-Emitter Voltage IC = 2mA 30 V BVEBO Emitter-Base Voltage IE = 10A5 V ICBO Collector Cut-off Current VCB = 30V 15 nA IEBO Emitter Cut-off Current VEB = 4V 15 nA hFE DC Current Gain VCE = 5V, IC = 10A 100 VCE = 5V, IC = 2mA 250 800 VCE = 5V, IC = 100mA 130 VCE(sat) Collector-Emitter Saturation Voltage IC =

1.3. bc184.pdf Size:99K _fairchild_semi

BC184
BC184
September 2007 BC184 Silicon NPN Small Signal Transistor BVCEO = 30V (Min.) hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 45 V VEBO Emitter-Base Voltage 5 V I C Collector Current (DC) 100 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25C unless otherwise noted Symbol Parameter Max. Units PD Total Device Dissipation 350 mW Derate above 25C 2.8 mW/C R?JC Thermal Resistance, Junction to Case 125 C/W R

1.4. bc184l.pdf Size:25K _fairchild_semi

BC184
BC184
BC184L Silicon NPN Small Signal Transistor (Note 1) BVCEO = 30V (Min.) hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 500 mA PC Collector Dissipation (Ta=25C) (Note 2, 3) 350 mW TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Voltage IC = 10A45 V BVCEO Collector-Emitter Voltage IC = 2mA 30 V BVEBO Emitter-Base Voltage IE = 10A5 V ICBO Collector Cut-off Current VCB = 30V 15 nA IEBO Emitter Cut-off Current VEB = 3V 15 nA hFE DC Current Gain VCE = 5V, IC = 10A 100 VCE = 5V, IC = 100mA 130 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 0.5mA 0.6 V IC

1.5. bc184lc.pdf Size:25K _fairchild_semi

BC184
BC184
BC184LC Silicon NPN Small Signal Transistor (Note 1) BVCEO = 30V (Min.) hFE = 250 (Min.) @VCE = 5.0V, IC = 2mA TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 200 mA PC Collector Dissipation (Ta=25C) (Note 2, 3) 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Voltage IC = 10A45 V BVCEO Collector-Emitter Voltage IC = 2mA 30 V BVEBO Emitter-Base Voltage IE = 10A5 V ICBO Collector Cut-off Current VCB = 30V 15 nA IEBO Emitter Cut-off Current VEB = 3V 15 nA hFE DC Current Gain VCE = 5V, IC = 10A 100 VCE = 5V, IC = 2mA 250 VCE = 5V, IC = 100mA 130 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA

1.6. bc184.pdf Size:215K _secos

BC184
BC184
BC184 0.1 A, 45 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES The BC184 is complementary silicon planar epitaxial transistors G H for use in AF small signal amplifiers and drivers, as well as for low noise pre-amplifiers applications. Both types feature good linearity of DC current gain. J Millimeter REF. A D Min. Max. A 4.40 4.70 Collector B B 4.30 4.70 C 12.70 - 1 K D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. 2 H 1.10 - Base J 2.42 2.66 K 0.36 0.76 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 45 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 6 V Collector Current - Continuous IC 0.1 A Collector Power Dissipation PC 350 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C

1.7. bc184l_lb_lc.pdf Size:141K _cdil

BC184
BC184
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL AMPLIFIER TRANSISTORS BC184L, BC184LB BC184LC TO-92 Plastic Package General Purpose Amplifier Transistors ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector -Emitter Voltage 30 V VCBO Collector -Base Voltage 45 V VEBO Emitter -Base Voltage 6.0 V IC Collector Current Continuous 100 mA PD Power Dissipation @ Ta=25?C 350 mW Derate Above 25?C 2.8 mW/?C PD Power Dissipation @ Tc=25?C 1.0 W Derate Above 25?C 8.0 mW/?C Tj, Tstg Operating And Storage Junction -55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth(j-c) Junction to Case 125 ?C/W Rth(j-a) Junction to Ambient 357 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS VCEO IC=2mA,IB=0 Collector -Emitter Voltage 30 V VCBO Collector -Base Voltage IC=10µA.IE=0

1.8. bc182_bc183_bc184.pdf Size:112K _cdil

BC184
BC184
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC182, A, B NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC183, A, B, C BC184, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with E B "T" C Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC182 BC183 BC184 UNITS Collector Emitter Voltage VCEO 50 30 30 V Collector Base Voltage VCBO 60 45 45 V Emitter Base Voltage VEBO 6.0 V Collector Current Continuous IC 100 mA Power Dissipation at Ta=25?C PD 350 mW Derate Above 25?C 2.8 mW/?C Power Dissipation at Tc=25?C PD 1.0 W Derate Above 25?C 8.0 mW/?C Operating And Storage Junction Tj, Tstg - 55 to +150 ?C Temperature Range THERMAL RESISTANCE Junction to Case Rth (j-c) 125 ?C/W Junction to Ambient in free air Rth (j-a) 357 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector Emitter Volt

See also transistors datasheet: BC183K , BC183KA , BC183KB , BC183KC , BC183L , BC183LA , BC183LB , BC183LC , C103 , BC184B , BC184C , BC184K , BC184KB , BC184KC , BC184L , BC184LB , BC184LC .

Keywords

 BC184 Datasheet  BC184 Datenblatt  BC184 RoHS  BC184 Distributor
 BC184 Application Notes  BC184 Component  BC184 Circuit  BC184 Schematic
 BC184 Equivalent  BC184 Cross Reference  BC184 Data Sheet  BC184 Fiche Technique

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