BC212K Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC212K

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 200

Collector capacitance (Cc), pF: 10

Forward current transfer ratio (hFE), min: 50

Noise Figure, dB: -

Package of BC212K transistor: TO226

BC212K Equivalent Transistors - Cross-Reference Search

BC212K PDF document for downloads:

5.1. bc212_bc213_bc214.pdf Size:107K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC212/D Amplifier Transistors BC212,B PNP Silicon BC213 COLLECTOR BC214 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 212 213 214 Rating Symbol Unit CASE 29–04, STYLE 17 TO–92 (TO–226AA) Collector–Emitter Voltage VCEO –50 –30 –30 Vdc Collector–Base Voltage VCBO –60 –45 –45 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C Total Device Dissipation @ TC = 25°C PD 1.0 Watts Derate above 25°C 8.0 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage BC212 V(BR)CEO

5.2. bc212b.pdf Size:27K _fairchild_semi

BC212B PNP General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 68. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 100 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BVCEO Collector-Emitter Br

5.3. bc212l.pdf Size:29K _fairchild_semi

BC212L B C E TO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 68. Absolute Maximum Ratings* T A = 25°C unless otherwise noted Symbol Parameter Value Units 50 V VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 5 V VEBO Emitter-Base Voltage Collector Current - Continuous 300 mA IC -55 to +150 °C TJ, Tstg Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T A = 25°C unless otherwise noted Symbol Characteristic Max Units Total Device Dissipation 625 mW PD Derate above 25°C 5.0 mW/°C 83.3 °C/W R?JC T

5.4. bc212lb.pdf Size:27K _fairchild_semi

BC212LB PNP General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 68. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 100 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BVCEO Collector-Emitter B

5.5. bc212b-d.pdf Size:59K _onsemi

BC212B Amplifier Transistors PNP Silicon Features • These are Pb-Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit 2 BASE Collector-Emitter Voltage VCEO -50 Vdc Collector-Base Voltage VCBO -60 Vdc 3 EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -100 mAdc Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C TO-92 Total Device Dissipation @ TC = 25°C PD 1.0 W CASE 29 Derate above 25°C 8.0 mW/°C STYLE 17 Operating and Storage Junction TJ, Tstg -55 to +150 °C Temperature Range 1 1 2 2 3 3 THERMAL CHARACTERISTICS STRAIGHT LEAD BENT LEAD Characteristic Symbol Max Unit BULK PACK TAPE & REEL AMMO PACK Thermal Resistance, Junction-to-Ambient RqJA 357 °C/W Thermal Resistance, Junction-to-Case RqJC 125 °C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operat

See also transistors datasheet: BC211C , BC211D , BC211E , BC212 , BC212A , BC212AP , BC212B , BC212BP , 9012 , BC212KA , BC212KB , BC212L , BC212LA , BC212LB , BC213 , BC213A , BC213B .

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