2H1256 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2H1256

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 10

Maximum collector current |Ic max|, A: 0.3

Maximum junction temperature (Tj), °C: 100

Transition frequency (ft), MHz: 35

Collector capacitance (Cc), pF: 12

Forward current transfer ratio (hFE), min: 25

Noise Figure, dB: -

Package of 2H1256 transistor: TO18

2H1256 Equivalent Transistors - Cross-Reference Search

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