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BC327-25
  BC327-25
  BC327-25
 
BC327-25
  BC327-25
  BC327-25
 
BC327-25
  BC327-25
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU526A/6
BU526A/7 .. BUL742C
BUL74A .. BUV47
BUV47A .. BUX83/9
BUX84 .. C945
C945LT1 .. CENW45
CF103 .. CJD47
CJD50 .. CMPTA63
CMPTA64 .. CS9018
CS9018D .. CSC1047
CSC1047B .. CSD1638
CSD1733 .. D11C1051
D11C1053 .. D39J6
D39J7 .. D45C4
D45C5 .. DMB2227A
DMJT9435 .. DTA123JUB
DTA123Y .. DTC143ZE
DTC143ZEA .. DZTA42
DZTA92 .. ECG361
ECG362 .. ESM138
ESM139 .. FC106
FC107 .. FJV4108R
FJV4109R .. FMMT5131
FMMT5132 .. FT4024
FT4025 .. GC181A
GC189 .. GES4926
GES4927 .. GI3638A
GI3641 .. GT3110A-2
GT311A .. HA7633
HA7723 .. HN2A26FS
HN2C01FE .. IDA1146
IDA1263 .. JE5401A
JE5401B .. KGS1002
KGS1003 .. KRA733F
KRA733U .. KRC668U
KRC669E .. KSA709-G
KSA709-O .. KSC2690A
KSC2690A-O .. KSD261-O
KSD261-R .. KSR2112
KSR2113 .. KT315N
KT315N-1 .. KT6111V
KT6112A .. KT8130A
KT8130B .. KT855V
KT856A .. KTA1807L
KTA1834D .. KTC9013
KTC9013S .. MA4103
MA4104 .. MH8211
MH8212 .. MJB44H11
MJB45H11 .. MJE4342
MJE4343 .. MM4209
MM4209A .. MMBT4965
MMBT5087L .. MMUN2215
MMUN2215L .. MP4052
MP4053 .. MPQ5858
MPQ5910 .. MPS929
MPS929A .. MRF455
MRF458 .. NA01F
NA01FG .. NB011HJ
NB011HK .. NB211EG
NB211EH .. NESG2021M16
NESG2030M04 .. NPS3903R
NPS3904 .. NSS60200LT1G
NSS60201LT1G .. OC480
OC480K .. PBSS4021PT
PBSS4032ND .. PEMD18
PEMD19 .. PN4403
PN4888 .. Q-00269A
Q-00369C .. RN1317
RN1318 .. RN2411
RN2412 .. RT657M
RT679M .. SD409
SD410 .. SGS911
SGS912 .. SRA2203S
SRA2203SF .. STB13007DT4
STB205L .. SUT465N
SUT466N .. TA1763
TA1763A .. TI814
TI815 .. TIPL757
TIPL757A .. TN3444
TN3467 .. TP4889
TP4890 .. UMH13N
UMH15N .. UN6218
UN6219 .. ZT1702
ZT1708 .. ZTX3701L
ZTX3701M .. ZXTN649F
ZXTNS618MC .. ZXTPS720MC
 
BC327-25 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BC327-25 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC327-25

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 18

Forward current transfer ratio (hFE), min: 160

Noise Figure, dB: -

Package of BC327-25 transistor: TO92

BC327-25 Equivalent Transistors - Cross-Reference Search

BC327-25 PDF doc:

1.1. bc327-25_bc327-40.pdf Size:66K _st

BC327-25
BC327-25
BC327-25 BC327-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Ordering Code Marking Package / Shipment BC327-25 BC327-25 TO-92 / Bulk BC327-25-AP BC327-25 TO-92 / Ammopack BC327-40 BC327-40 TO-92 / Bulk BC327-40-AP BC327-40 TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY TO-92 TO-92 THE NPN COMPLEMENTARY TYPES ARE Bulk Ammopack BC337-25 AND BC337-40 RESPECTIVELY APPLICATIONS WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT SMALL LOAD SWITCH TRANSISTORS INTERNAL SCHEMATIC DIAGRAM WITH HIGH GAIN AND LOW SATURATION VOLTAGE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -50 V V Collector-Emitter Voltage (I = 0) -45 V CEO B VEBO Emitter-Base Voltage (IC = 0) -5 V IC Collector Current -0.5 A ICM Collector Peak Current (tp < 5 ms) -1 A Ptot Total Dissipation at TC = 25 oC 625 mW o T Storage Temperature -65 to 150 C stg o Tj Max. Operating J

4.1. bc327-328.pdf Size:154K _lge

BC327-25
BC327-25
BC327/328(PNP) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC327 -50 V BC328 -30 VCEO Collector-Emitter Voltage BC327 -45 V BC328 -25 VEBO -5 Emitter-Base Voltage V IC Collector Current -Continuous -800 mA Dimensions in inches and (millimeters) PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage IC= -100uA, IE=0 BC327 VCBO -50 V BC328 -30 Collector-emitter breakdown voltage IC= -10mA , IB=0 BC327 VCEO -45 V BC328 -25 Emitter-base breakdown voltage VEBO IE= -10uA, IC=0 -5 V Collector cut-off current BC327 ICBO VCB= -45 V , IE=0 -0.1 uA BC328 VCB= -25V , IE=0 -0.1

5.1. bc327_bc328.pdf Size:160K _motorola

BC327-25
BC327-25
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC327/D Amplifier Transistors PNP Silicon BC327,-16,-25 BC328,-16,-25 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC327 BC328 Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 45 25 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 50 30 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 800 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watt Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V(BR)CE

5.2. bc807_bc807w_bc327.pdf Size:233K _philips

BC327-25
BC327-25
BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1. Product overview Type number Package NPN complement NXP JEITA BC807 SOT23 - BC817 BC807W SOT323 SC-70 BC817W BC327[1] SOT54 (TO-92) SC-43A BC337 [1] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base; - - -45 V IC =10mA IC collector current (DC) - - -500 mA ICM peak collector current - - -1 A [1] hFE DC current gain IC = -100 mA; VCE = -1V BC807; BC807W; BC327 100 - 600 BC807-16; BC807-16W; BC327-16 100 - 250 BC807-25; BC807-25W; BC327-25 160 - 400 BC807-40; BC807-40W; BC327-40 250 - 600 [1] Pulse test:

5.3. bc327_3.pdf Size:52K _philips

BC327-25
BC327-25
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC327 PNP general purpose transistor 1999 Apr 15 Product specification Supersedes data of 1997 Mar 10 Philips Semiconductors Product specification PNP general purpose transistor BC327 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. 1 DESCRIPTION handbook, halfpage 3 2 3 PNP transistor in a TO-92; SOT54 plastic package. 2 NPN complement: BC337. 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --50 V VCEO collector-emitter voltage open base --45 V VEBO emitter-base voltage open collector --5V IC collector current (DC) --500 mA ICM peak coll

5.4. bc327_bc328.pdf Size:49K _fairchild_semi

BC327-25
BC327-25
BC327/328 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC327 -50 V : BC328 -30 V VCEO Collector-Emitter Voltage : BC327 -45 V : BC328 -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 : BC327 -45 V : BC328 -25 V BVCES Collector-Emitter Breakdown Voltage IC= -0.1mA, VBE=0 : BC327 -50 V : BC328 -30 V BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 -5 V ICES Collector Cut-off Current : BC327 V

5.5. bc327_bc328_to-92.pdf Size:384K _mcc

BC327-25
BC327-25
BC327-16/25/40 MCC TM Micro Commercial Components BC328-16/25/40 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features PNP Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Capable of 0.625Watts of Power Dissipation. Collector-current : -0.8A Transistors Collector-base Voltage :VCBO=-50V(BC327) , VCBO=-30V(BC328) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 TO-92 Maximum Ratings A E Operating temperature : -55 to +150 Storage temperature : -55 to +150 Electrical Characteristics @ 25 Unless Otherwise Specified Symbol Parameter Min Max Units B OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage --- Vdc (IC=-10mAdc, IB=0) BC327 -45 BC328 -25 V(BR)CBO Collector-Base Breakdown Voltage --- Vdc (IC=-100Adc, IE=0) BC327 -50 BC328 -30 V(BR)EBO Collecto

5.6. bc327_bc32716_bc32725_bc32740.pdf Size:68K _onsemi

BC327-25
BC327-25
BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon http://onsemi.com Features Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector -Emitter Voltage VCEO -45 Vdc 3 Collector -Base Voltage VCES -50 Vdc EMITTER Collector -Emitter Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -800 mAdc Total Power Dissipation @ TA = 25C PD 625 mW Derate above TA = 25C 5.0 mW/C TO-92 Total Power Dissipation @ TA = 25C PD 1.5 W CASE 29 Derate above TA = 25C 12 mW/C STYLE 17 Operating and Storage Junction TJ, Tstg -55 to +150 C Temperature Range 1 1 2 2 THERMAL CHARACTERISTICS 3 3 STRAIGHT LEAD BENT LEAD Characteristic Symbol Max Unit BULK PACK TAPE & REEL Thermal Resistance, Junction-to-Ambient RqJA 200 C/W AMMO PACK Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum MARKING DIAGRAM Ratings are stress ratings only

5.7. sbc327.pdf Size:84K _auk

BC327-25
BC327-25
SBC327 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary Pair with SBC337 Ordering Information Type NO. Marking Package Code0 SBC327 SBC327 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Collector 2. Base 3. Emitter KST-9020-000 1 4.5 ± 0.1 14.0 ± 0.40 0.38 1.20 ± 0.1 SBC327 Absolute maximum ratings (Ta=25° °C) ° ° Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -35 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25° °C) ° ° Characteristic Symbol Test Condition Min. Typ. Max. Unit Coll

5.8. bc327~bc328.pdf Size:293K _secos

BC327-25
BC327-25
BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 1 1 1 J 2Base 2 2 2 CLASSIFICATION OF hFE (1) 3 A D 3Emitter 3 3 Product-Rank BC327-16 BC327-25 BC327-40 B Millimeter REF. Min. Max. Product-Rank BC328-16 BC328-25 BC328-40 A 4.40 4.70 K B 4.30 4.70 Range 100~250 160~400 250~630 C 12.70 - D 3.30 3.81 E 0.36 0.56 E C F F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector 1 2 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit BC327 -50 Collector to Base Voltage VCBO V BC328 -30 BC327 -45 Collector to Emitter Voltage VCEO V BC328 -25 Emitter to Base Voltage V -5 V EBO Collector Current - Continuous I -800 mA C Collector Power Dissipation P 625 mW C Junction, Storage T

5.9. bc327_bc328_bc337_bc338.pdf Size:117K _cdil

BC327-25
BC327-25
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC337/A BC338 NPN TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E B C General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC327/337 BC327A/337A BC328/338 UNITS Collector Emitter Voltage VCEO 45 60 25 V Collector Emitter Voltage VCES 50 60 30 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 800 mA Collector Current Peak ICM 1000 mA Emitter Current Peak IEM 1000 mA Base Current Continuous IB 100 mA Base Current Peak IBM 200 mA Power Dissipation at Ta=25?C PD 625 mW Derate Above 25?C 5 mW/?C Operating And Storage Junction Tj, Tstg - 65 to +150 ?C Temperature Range THERMAL RESISTANCE Junction to Ambient in free air Rth (j-a) 200 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C

5.10. bc327.pdf Size:378K _kec

BC327-25
BC327-25
SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA). For Complementary with NPN type BC337. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -50 V Collector-Base Voltage VCEO -45 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -800 mA IB Base Current -200 mA IE Emitter Current 800 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-45V, IE=0 Collector Cut-off Current - - -100 nA hFE VCE=-1V, IC=-100mA DC Current Gain (Note) 100 - 630 VCE(sat) IC=-500mA, IB=-50mA Collector-Emitter Saturation Voltage - - -0.7 V VBE(ON) VCE=-1V, IC=-300mA Base-Emitter Voltage - - -1.2 V fT VCE=-5V, IC=-10mA, f=100MH

5.11. bc327_bc328.pdf Size:471K _wietron

BC327-25
BC327-25
BC327/BC328 PNP General Purpose Transistor COLLECTOR 1 P b Lead(Pb)-Free TO-92 2 BASE 1 3 2 3 EMITTER Maximum Ratings(TA=25°C unless otherwise noted) Rating Symbol BC327 BC328 Unit VCBO Collector-Base voltage -50 -30 V VCEO V Collector-Emitter voltage -45 -25 VEBO V Emitter-Base voltage -5.0 -5.0 Collector Current Continuous lC mA 800 Total Device Dissipation PD 625 mW/°C Alumina Substrate,TA=25°C TJ Operating Junction Temperature Range -55 to +150 °C Tstg °C Storage Junction Temperature Range -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=-100µA, IE=0 BC327 V(BR)CBO -50 - - V BC328 -30 Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 V(BR)CEO -45 - BC327 - V BC328 -25 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 - - V BC327 IC=-10µA, IC=0 BC328 WEITRON 1/4 29-Jun-06 http://www.weitron.com.tw BC327/BC328 ELECTRICAL CHARACTERISTICS(

See also transistors datasheet: BC323 , BC324 , BC325 , BC326 , BC327 , BC327-01 , BC327-10 , BC327-16 , BC108 , BC327-40 , BC327AP , BC327BP , BC327CP , BC327L , BC327P , BC328 , BC328-01 .

Keywords

 BC327-25 Datasheet  BC327-25 Datenblatt  BC327-25 RoHS  BC327-25 Distributor
 BC327-25 Application Notes  BC327-25 Component  BC327-25 Circuit  BC327-25 Schematic
 BC327-25 Equivalent  BC327-25 Cross Reference  BC327-25 Data Sheet  BC327-25 Fiche Technique

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