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BC327-25
  BC327-25
  BC327-25
 
BC327-25
  BC327-25
  BC327-25
 
BC327-25
  BC327-25
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
BC327-25 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BC327-25 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC327-25

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 18

Forward current transfer ratio (hFE), min: 160

Noise Figure, dB: -

Package of BC327-25 transistor: TO92

BC327-25 Equivalent Transistors - Cross-Reference Search

BC327-25 PDF doc:

1.1. bc327-25_bc327-40.pdf Size:66K _st

BC327-25
BC327-25
BC327-25 BC327-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Ordering Code Marking Package / Shipment BC327-25 BC327-25 TO-92 / Bulk BC327-25-AP BC327-25 TO-92 / Ammopack BC327-40 BC327-40 TO-92 / Bulk BC327-40-AP BC327-40 TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY TO-92 TO-92 THE NPN COMPLEMENTARY TYPES ARE Bulk Ammopack BC337-25 AND BC337-40 RESPECTIVELY APPLICATIONS WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT SMALL LOAD SWITCH TRANSISTORS INTERNAL SCHEMATIC DIAGRAM WITH HIGH GAIN AND LOW SATURATION VOLTAGE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -50 V V Collector-Emitter Voltage (I = 0) -45 V CEO B VEBO Emitter-Base Voltage (IC = 0) -5 V IC Collector Current -0.5 A ICM Collector Peak Current (tp < 5 ms) -1 A Ptot Total Dissipation at TC = 25 oC 625 mW o T Storage Temperature -65 to 150 C stg o Tj Max. Operating J

4.1. bc327-328.pdf Size:154K _lge

BC327-25
BC327-25
BC327/328(PNP) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC327 -50 V BC328 -30 VCEO Collector-Emitter Voltage BC327 -45 V BC328 -25 VEBO -5 Emitter-Base Voltage V IC Collector Current -Continuous -800 mA Dimensions in inches and (millimeters) PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage IC= -100uA, IE=0 BC327 VCBO -50 V BC328 -30 Collector-emitter breakdown voltage IC= -10mA , IB=0 BC327 VCEO -45 V BC328 -25 Emitter-base breakdown voltage VEBO IE= -10uA, IC=0 -5 V Collector cut-off current BC327 ICBO VCB= -45 V , IE=0 -0.1 uA BC328 VCB= -25V , IE=0 -0.1

5.1. bc327_bc328.pdf Size:160K _motorola

BC327-25
BC327-25
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC327/D Amplifier Transistors PNP Silicon BC327,-16,-25 BC328,-16,-25 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC327 BC328 Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 45 25 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 50 30 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 800 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watt Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V(BR)CE

5.2. bc807_bc807w_bc327.pdf Size:233K _philips

BC327-25
BC327-25
BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1. Product overview Type number Package NPN complement NXP JEITA BC807 SOT23 - BC817 BC807W SOT323 SC-70 BC817W BC327[1] SOT54 (TO-92) SC-43A BC337 [1] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base; - - -45 V IC =10mA IC collector current (DC) - - -500 mA ICM peak collector current - - -1 A [1] hFE DC current gain IC = -100 mA; VCE = -1V BC807; BC807W; BC327 100 - 600 BC807-16; BC807-16W; BC327-16 100 - 250 BC807-25; BC807-25W; BC327-25 160 - 400 BC807-40; BC807-40W; BC327-40 250 - 600 [1] Pulse test:

5.3. bc327_3.pdf Size:52K _philips

BC327-25
BC327-25
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC327 PNP general purpose transistor 1999 Apr 15 Product specification Supersedes data of 1997 Mar 10 Philips Semiconductors Product specification PNP general purpose transistor BC327 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. 1 DESCRIPTION handbook, halfpage 3 2 3 PNP transistor in a TO-92; SOT54 plastic package. 2 NPN complement: BC337. 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --50 V VCEO collector-emitter voltage open base --45 V VEBO emitter-base voltage open collector --5V IC collector current (DC) --500 mA ICM peak coll

5.4. bc327_bc328.pdf Size:49K _fairchild_semi

BC327-25
BC327-25
BC327/328 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC327 -50 V : BC328 -30 V VCEO Collector-Emitter Voltage : BC327 -45 V : BC328 -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 : BC327 -45 V : BC328 -25 V BVCES Collector-Emitter Breakdown Voltage IC= -0.1mA, VBE=0 : BC327 -50 V : BC328 -30 V BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 -5 V ICES Collector Cut-off Current : BC327 V

5.5. bc327_bc328_to-92.pdf Size:384K _mcc

BC327-25
BC327-25
BC327-16/25/40 MCC TM Micro Commercial Components BC328-16/25/40 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features PNP Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Capable of 0.625Watts of Power Dissipation. Collector-current : -0.8A Transistors Collector-base Voltage :VCBO=-50V(BC327) , VCBO=-30V(BC328) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 TO-92 Maximum Ratings A E Operating temperature : -55 to +150 Storage temperature : -55 to +150 Electrical Characteristics @ 25 Unless Otherwise Specified Symbol Parameter Min Max Units B OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage --- Vdc (IC=-10mAdc, IB=0) BC327 -45 BC328 -25 V(BR)CBO Collector-Base Breakdown Voltage --- Vdc (IC=-100Adc, IE=0) BC327 -50 BC328 -30 V(BR)EBO Collecto

5.6. bc327_bc32716_bc32725_bc32740.pdf Size:68K _onsemi

BC327-25
BC327-25
BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon http://onsemi.com Features Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector -Emitter Voltage VCEO -45 Vdc 3 Collector -Base Voltage VCES -50 Vdc EMITTER Collector -Emitter Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -800 mAdc Total Power Dissipation @ TA = 25C PD 625 mW Derate above TA = 25C 5.0 mW/C TO-92 Total Power Dissipation @ TA = 25C PD 1.5 W CASE 29 Derate above TA = 25C 12 mW/C STYLE 17 Operating and Storage Junction TJ, Tstg -55 to +150 C Temperature Range 1 1 2 2 THERMAL CHARACTERISTICS 3 3 STRAIGHT LEAD BENT LEAD Characteristic Symbol Max Unit BULK PACK TAPE & REEL Thermal Resistance, Junction-to-Ambient RqJA 200 C/W AMMO PACK Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum MARKING DIAGRAM Ratings are stress ratings only

5.7. sbc327.pdf Size:84K _auk

BC327-25
BC327-25
SBC327 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary Pair with SBC337 Ordering Information Type NO. Marking Package Code0 SBC327 SBC327 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Collector 2. Base 3. Emitter KST-9020-000 1 4.5 ± 0.1 14.0 ± 0.40 0.38 1.20 ± 0.1 SBC327 Absolute maximum ratings (Ta=25° °C) ° ° Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -35 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25° °C) ° ° Characteristic Symbol Test Condition Min. Typ. Max. Unit Coll

5.8. bc327~bc328.pdf Size:293K _secos

BC327-25
BC327-25
BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 1 1 1 J 2Base 2 2 2 CLASSIFICATION OF hFE (1) 3 A D 3Emitter 3 3 Product-Rank BC327-16 BC327-25 BC327-40 B Millimeter REF. Min. Max. Product-Rank BC328-16 BC328-25 BC328-40 A 4.40 4.70 K B 4.30 4.70 Range 100~250 160~400 250~630 C 12.70 - D 3.30 3.81 E 0.36 0.56 E C F F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector 1 2 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit BC327 -50 Collector to Base Voltage VCBO V BC328 -30 BC327 -45 Collector to Emitter Voltage VCEO V BC328 -25 Emitter to Base Voltage V -5 V EBO Collector Current - Continuous I -800 mA C Collector Power Dissipation P 625 mW C Junction, Storage T

5.9. bc327_bc328_bc337_bc338.pdf Size:117K _cdil

BC327-25
BC327-25
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC337/A BC338 NPN TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E B C General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC327/337 BC327A/337A BC328/338 UNITS Collector Emitter Voltage VCEO 45 60 25 V Collector Emitter Voltage VCES 50 60 30 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 800 mA Collector Current Peak ICM 1000 mA Emitter Current Peak IEM 1000 mA Base Current Continuous IB 100 mA Base Current Peak IBM 200 mA Power Dissipation at Ta=25?C PD 625 mW Derate Above 25?C 5 mW/?C Operating And Storage Junction Tj, Tstg - 65 to +150 ?C Temperature Range THERMAL RESISTANCE Junction to Ambient in free air Rth (j-a) 200 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C

5.10. bc327.pdf Size:378K _kec

BC327-25
BC327-25
SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA). For Complementary with NPN type BC337. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -50 V Collector-Base Voltage VCEO -45 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -800 mA IB Base Current -200 mA IE Emitter Current 800 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-45V, IE=0 Collector Cut-off Current - - -100 nA hFE VCE=-1V, IC=-100mA DC Current Gain (Note) 100 - 630 VCE(sat) IC=-500mA, IB=-50mA Collector-Emitter Saturation Voltage - - -0.7 V VBE(ON) VCE=-1V, IC=-300mA Base-Emitter Voltage - - -1.2 V fT VCE=-5V, IC=-10mA, f=100MH

5.11. bc327_bc328.pdf Size:471K _wietron

BC327-25
BC327-25
BC327/BC328 PNP General Purpose Transistor COLLECTOR 1 P b Lead(Pb)-Free TO-92 2 BASE 1 3 2 3 EMITTER Maximum Ratings(TA=25°C unless otherwise noted) Rating Symbol BC327 BC328 Unit VCBO Collector-Base voltage -50 -30 V VCEO V Collector-Emitter voltage -45 -25 VEBO V Emitter-Base voltage -5.0 -5.0 Collector Current Continuous lC mA 800 Total Device Dissipation PD 625 mW/°C Alumina Substrate,TA=25°C TJ Operating Junction Temperature Range -55 to +150 °C Tstg °C Storage Junction Temperature Range -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=-100µA, IE=0 BC327 V(BR)CBO -50 - - V BC328 -30 Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 V(BR)CEO -45 - BC327 - V BC328 -25 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 - - V BC327 IC=-10µA, IC=0 BC328 WEITRON 1/4 29-Jun-06 http://www.weitron.com.tw BC327/BC328 ELECTRICAL CHARACTERISTICS(

See also transistors datasheet: BC323 , BC324 , BC325 , BC326 , BC327 , BC327-01 , BC327-10 , BC327-16 , BC108 , BC327-40 , BC327AP , BC327BP , BC327CP , BC327L , BC327P , BC328 , BC328-01 .

Keywords

 BC327-25 Datasheet  BC327-25 Datenblatt  BC327-25 RoHS  BC327-25 Distributor
 BC327-25 Application Notes  BC327-25 Component  BC327-25 Circuit  BC327-25 Schematic
 BC327-25 Equivalent  BC327-25 Cross Reference  BC327-25 Data Sheet  BC327-25 Fiche Technique

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