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BC327-25
  BC327-25
  BC327-25
  BC327-25
 
BC327-25
  BC327-25
  BC327-25
  BC327-25
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
BC327-25 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BC327-25 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC327-25

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 18

Forward current transfer ratio (hFE), min: 160

Noise Figure, dB: -

Package of BC327-25 transistor: TO92

BC327-25 Equivalent Transistors - Cross-Reference Search

BC327-25 PDF doc:

1.1. bc327-25_bc327-40.pdf Size:66K _st

BC327-25
BC327-25
BC327-25 BC327-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Ordering Code Marking Package / Shipment BC327-25 BC327-25 TO-92 / Bulk BC327-25-AP BC327-25 TO-92 / Ammopack BC327-40 BC327-40 TO-92 / Bulk BC327-40-AP BC327-40 TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY TO-92 TO-92 THE NPN COMPLEMENTARY TYPES ARE Bulk Ammopack BC337-25 AND BC337-40 RESPECTIVELY APPLICATIONS WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT SMALL LOAD SWITCH TRANSISTORS INTERNAL SCHEMATIC DIAGRAM WITH HIGH GAIN AND LOW SATURATION VOLTAGE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -50 V V Collector-Emitter Voltage (I = 0) -45 V CEO B VEBO Emitter-Base Voltage (IC = 0) -5 V IC Collector Current -0.5 A ICM Collector Peak Current (tp < 5 ms) -1 A Ptot Total Dissipation at TC = 25 oC 625 mW o T Storage Temperature -65 to 150 C stg o Tj Max. Operating J

4.1. bc327-328.pdf Size:154K _lge

BC327-25
BC327-25
BC327/328(PNP) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC327 -50 V BC328 -30 VCEO Collector-Emitter Voltage BC327 -45 V BC328 -25 VEBO -5 Emitter-Base Voltage V IC Collector Current -Continuous -800 mA Dimensions in inches and (millimeters) PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage IC= -100uA, IE=0 BC327 VCBO -50 V BC328 -30 Collector-emitter breakdown voltage IC= -10mA , IB=0 BC327 VCEO -45 V BC328 -25 Emitter-base breakdown voltage VEBO IE= -10uA, IC=0 -5 V Collector cut-off current BC327 ICBO VCB= -45 V , IE=0 -0.1 uA BC328 VCB= -25V , IE=0 -0.1

5.1. bc327_bc328.pdf Size:160K _motorola

BC327-25
BC327-25
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC327/D Amplifier Transistors PNP Silicon BC327,-16,-25 BC328,-16,-25 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC327 BC328 Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 45 25 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 50 30 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 800 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watt Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V(BR)CE

5.2. bc807_bc807w_bc327.pdf Size:233K _philips

BC327-25
BC327-25
BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1. Product overview Type number Package NPN complement NXP JEITA BC807 SOT23 - BC817 BC807W SOT323 SC-70 BC817W BC327[1] SOT54 (TO-92) SC-43A BC337 [1] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base; - - -45 V IC =10mA IC collector current (DC) - - -500 mA ICM peak collector current - - -1 A [1] hFE DC current gain IC = -100 mA; VCE = -1V BC807; BC807W; BC327 100 - 600 BC807-16; BC807-16W; BC327-16 100 - 250 BC807-25; BC807-25W; BC327-25 160 - 400 BC807-40; BC807-40W; BC327-40 250 - 600 [1] Pulse test:

5.3. bc327_3.pdf Size:52K _philips

BC327-25
BC327-25
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC327 PNP general purpose transistor 1999 Apr 15 Product specification Supersedes data of 1997 Mar 10 Philips Semiconductors Product specification PNP general purpose transistor BC327 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. 1 DESCRIPTION handbook, halfpage 3 2 3 PNP transistor in a TO-92; SOT54 plastic package. 2 NPN complement: BC337. 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --50 V VCEO collector-emitter voltage open base --45 V VEBO emitter-base voltage open collector --5V IC collector current (DC) --500 mA ICM peak coll

5.4. bc327_bc328.pdf Size:49K _fairchild_semi

BC327-25
BC327-25
BC327/328 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC327 -50 V : BC328 -30 V VCEO Collector-Emitter Voltage : BC327 -45 V : BC328 -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 : BC327 -45 V : BC328 -25 V BVCES Collector-Emitter Breakdown Voltage IC= -0.1mA, VBE=0 : BC327 -50 V : BC328 -30 V BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 -5 V ICES Collector Cut-off Current : BC327 V

5.5. bc327_bc328_to-92.pdf Size:384K _mcc

BC327-25
BC327-25
BC327-16/25/40 MCC TM Micro Commercial Components BC328-16/25/40 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features PNP Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Capable of 0.625Watts of Power Dissipation. Collector-current : -0.8A Transistors Collector-base Voltage :VCBO=-50V(BC327) , VCBO=-30V(BC328) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 TO-92 Maximum Ratings A E Operating temperature : -55 to +150 Storage temperature : -55 to +150 Electrical Characteristics @ 25 Unless Otherwise Specified Symbol Parameter Min Max Units B OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage --- Vdc (IC=-10mAdc, IB=0) BC327 -45 BC328 -25 V(BR)CBO Collector-Base Breakdown Voltage --- Vdc (IC=-100Adc, IE=0) BC327 -50 BC328 -30 V(BR)EBO Collecto

5.6. bc327_bc32716_bc32725_bc32740.pdf Size:68K _onsemi

BC327-25
BC327-25
BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon http://onsemi.com Features Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector -Emitter Voltage VCEO -45 Vdc 3 Collector -Base Voltage VCES -50 Vdc EMITTER Collector -Emitter Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -800 mAdc Total Power Dissipation @ TA = 25C PD 625 mW Derate above TA = 25C 5.0 mW/C TO-92 Total Power Dissipation @ TA = 25C PD 1.5 W CASE 29 Derate above TA = 25C 12 mW/C STYLE 17 Operating and Storage Junction TJ, Tstg -55 to +150 C Temperature Range 1 1 2 2 THERMAL CHARACTERISTICS 3 3 STRAIGHT LEAD BENT LEAD Characteristic Symbol Max Unit BULK PACK TAPE & REEL Thermal Resistance, Junction-to-Ambient RqJA 200 C/W AMMO PACK Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum MARKING DIAGRAM Ratings are stress ratings only

5.7. sbc327.pdf Size:84K _auk

BC327-25
BC327-25
SBC327 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary Pair with SBC337 Ordering Information Type NO. Marking Package Code0 SBC327 SBC327 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Collector 2. Base 3. Emitter KST-9020-000 1 4.5 ± 0.1 14.0 ± 0.40 0.38 1.20 ± 0.1 SBC327 Absolute maximum ratings (Ta=25° °C) ° ° Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -35 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25° °C) ° ° Characteristic Symbol Test Condition Min. Typ. Max. Unit Coll

5.8. bc327~bc328.pdf Size:293K _secos

BC327-25
BC327-25
BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 1 1 1 J 2Base 2 2 2 CLASSIFICATION OF hFE (1) 3 A D 3Emitter 3 3 Product-Rank BC327-16 BC327-25 BC327-40 B Millimeter REF. Min. Max. Product-Rank BC328-16 BC328-25 BC328-40 A 4.40 4.70 K B 4.30 4.70 Range 100~250 160~400 250~630 C 12.70 - D 3.30 3.81 E 0.36 0.56 E C F F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector 1 2 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit BC327 -50 Collector to Base Voltage VCBO V BC328 -30 BC327 -45 Collector to Emitter Voltage VCEO V BC328 -25 Emitter to Base Voltage V -5 V EBO Collector Current - Continuous I -800 mA C Collector Power Dissipation P 625 mW C Junction, Storage T

5.9. bc327_bc328_bc337_bc338.pdf Size:117K _cdil

BC327-25
BC327-25
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC337/A BC338 NPN TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E B C General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC327/337 BC327A/337A BC328/338 UNITS Collector Emitter Voltage VCEO 45 60 25 V Collector Emitter Voltage VCES 50 60 30 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 800 mA Collector Current Peak ICM 1000 mA Emitter Current Peak IEM 1000 mA Base Current Continuous IB 100 mA Base Current Peak IBM 200 mA Power Dissipation at Ta=25?C PD 625 mW Derate Above 25?C 5 mW/?C Operating And Storage Junction Tj, Tstg - 65 to +150 ?C Temperature Range THERMAL RESISTANCE Junction to Ambient in free air Rth (j-a) 200 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C

5.10. bc327.pdf Size:378K _kec

BC327-25
BC327-25
SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA). For Complementary with NPN type BC337. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -50 V Collector-Base Voltage VCEO -45 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current -800 mA IB Base Current -200 mA IE Emitter Current 800 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-45V, IE=0 Collector Cut-off Current - - -100 nA hFE VCE=-1V, IC=-100mA DC Current Gain (Note) 100 - 630 VCE(sat) IC=-500mA, IB=-50mA Collector-Emitter Saturation Voltage - - -0.7 V VBE(ON) VCE=-1V, IC=-300mA Base-Emitter Voltage - - -1.2 V fT VCE=-5V, IC=-10mA, f=100MH

5.11. bc327_bc328.pdf Size:471K _wietron

BC327-25
BC327-25
BC327/BC328 PNP General Purpose Transistor COLLECTOR 1 P b Lead(Pb)-Free TO-92 2 BASE 1 3 2 3 EMITTER Maximum Ratings(TA=25°C unless otherwise noted) Rating Symbol BC327 BC328 Unit VCBO Collector-Base voltage -50 -30 V VCEO V Collector-Emitter voltage -45 -25 VEBO V Emitter-Base voltage -5.0 -5.0 Collector Current Continuous lC mA 800 Total Device Dissipation PD 625 mW/°C Alumina Substrate,TA=25°C TJ Operating Junction Temperature Range -55 to +150 °C Tstg °C Storage Junction Temperature Range -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=-100µA, IE=0 BC327 V(BR)CBO -50 - - V BC328 -30 Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 V(BR)CEO -45 - BC327 - V BC328 -25 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 - - V BC327 IC=-10µA, IC=0 BC328 WEITRON 1/4 29-Jun-06 http://www.weitron.com.tw BC327/BC328 ELECTRICAL CHARACTERISTICS(

See also transistors datasheet: BC323 , BC324 , BC325 , BC326 , BC327 , BC327-01 , BC327-10 , BC327-16 , BC108 , BC327-40 , BC327AP , BC327BP , BC327CP , BC327L , BC327P , BC328 , BC328-01 .

Keywords

 BC327-25 Datasheet  BC327-25 Datenblatt  BC327-25 RoHS  BC327-25 Distributor
 BC327-25 Application Notes  BC327-25 Component  BC327-25 Circuit  BC327-25 Schematic
 BC327-25 Equivalent  BC327-25 Cross Reference  BC327-25 Data Sheet  BC327-25 Fiche Technique

 

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