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BC327-40
Transistor Datasheet. Parameters and Characteristics. Type Designator: BC327-40
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.5
Maximum collector-base voltage |Ucb|, V: 50
Maximum collector-emitter voltage |Uce|, V: 45
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.8
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 60
Collector capacitance (Cc), pF: 18
Forward current transfer ratio (hFE), min: 63
Noise Figure, dB: - Package of BC327-40
transistor: TO92
BC327-40
Equivalent Transistors - Cross-Reference Search BC327-40
PDF document for downloads:
1.1. bc327-25_bc327-40.pdf  Size:66K _st  |
 | BC327-25
BC327-40
SMALL SIGNAL PNP TRANSISTORS
PRELIMINARY DATA
Ordering Code Marking Package / Shipment
BC327-25 BC327-25 TO-92 / Bulk
BC327-25-AP BC327-25 TO-92 / Ammopack
BC327-40 BC327-40 TO-92 / Bulk
BC327-40-AP BC327-40 TO-92 / Ammopack
SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
TO-92 PACKAGE SUITABLE FOR
THROUGH-HOLE PCB ASSEMBLY
TO-92 TO-92
THE NPN COMPLEMENTARY TYPES ARE
Bulk Ammopack
BC337-25 AND BC337-40 RESPECTIVELY
APPLICATIONS
WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPMENT
SMALL LOAD SWITCH TRANSISTORS
INTERNAL SCHEMATIC DIAGRAM
WITH HIGH GAIN AND LOW SATURATION
VOLTAGE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) -50 V
V Collector-Emitter Voltage (I = 0) -45 V
CEO B
VEBO Emitter-Base Voltage (IC = 0) -5 V
IC Collector Current -0.5 A
ICM Collector Peak Current (tp < 5 ms) -1 A
Ptot Total Dissipation at TC = 25 oC 625 mW
o
T Storage Temperature -65 to 150 C
stg
o
Tj Max. Operating J |
4.1. bc327-328.pdf Size:154K _lge  |
 | BC327/328(PNP)
TO-92 Bipolar Transistors
TO-92
1. COLLECTOR
2. BASE
3. EMITTER
Features
Power dissipation
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value
Units
VCBO Collector-Base Voltage BC327 -50
V
BC328 -30
VCEO Collector-Emitter Voltage BC327 -45
V
BC328 -25
VEBO -5
Emitter-Base Voltage V
IC Collector Current -Continuous -800
mA
Dimensions in inches and (millimeters)
PC Collector Power Dissipation 625
mW
Tj Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage IC= -100uA, IE=0
BC327 VCBO -50 V
BC328 -30
Collector-emitter breakdown voltage IC= -10mA , IB=0
BC327 VCEO -45 V
BC328 -25
Emitter-base breakdown voltage VEBO IE= -10uA, IC=0 -5 V
Collector cut-off current
BC327 ICBO VCB= -45 V , IE=0 -0.1 uA
BC328 VCB= -25V , IE=0 -0.1 |
5.1. bc327_bc328.pdf Size:160K _motorola  |
 | MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by BC327/D
Amplifier Transistors
PNP Silicon
BC327,-16,-25
BC328,-16,-25
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
2
3
Rating Symbol BC327 BC328 Unit
CASE 2904, STYLE 17
CollectorEmitter Voltage VCEO 45 25 Vdc
TO92 (TO226AA)
CollectorBase Voltage VCBO 50 30 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current Continuous IC 800 mAdc
Total Device Dissipation @ TA = 25C PD 625 mW
Derate above 25C 5.0 mW/C
Total Device Dissipation @ TC = 25C PD 1.5 Watt
Derate above 25C 12 mW/C
Operating and Storage Junction TJ, Tstg 55 to +150 C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 C/W
Thermal Resistance, Junction to Case RqJC 83.3 C/W
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage V(BR)CE |
5.2. bc327_3.pdf Size:52K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC327
PNP general purpose transistor
1999 Apr 15
Product specification
Supersedes data of 1997 Mar 10
Philips Semiconductors Product specification
PNP general purpose transistor BC327
FEATURES PINNING
High current (max. 500 mA)
PIN DESCRIPTION
Low voltage (max. 45 V).
1 emitter
2 base
APPLICATIONS
3 collector
General purpose switching and amplification,
e.g. driver and output stages of audio amplifiers.
1
DESCRIPTION handbook, halfpage
3
2
3
PNP transistor in a TO-92; SOT54 plastic package.
2
NPN complement: BC337.
1
MAM281
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter --50 V
VCEO collector-emitter voltage open base --45 V
VEBO emitter-base voltage open collector --5V
IC collector current (DC) --500 mA
ICM peak coll |
5.3. bc807_bc807w_bc327.pdf Size:233K _philips  |
 | BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Rev. 06 17 November 2009 Product data sheet
1. Product profile
1.1 General description
PNP general-purpose transistors.
Table 1. Product overview
Type number Package NPN complement
NXP JEITA
BC807 SOT23 - BC817
BC807W SOT323 SC-70 BC817W
BC327[1] SOT54 (TO-92) SC-43A BC337
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
High current
Low voltage
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base; - - -45 V
IC =10mA
IC collector current (DC) - - -500 mA
ICM peak collector current - - -1 A
[1]
hFE DC current gain IC = -100 mA;
VCE = -1V
BC807; BC807W; BC327 100 - 600
BC807-16; BC807-16W; BC327-16 100 - 250
BC807-25; BC807-25W; BC327-25 160 - 400
BC807-40; BC807-40W; BC327-40 250 - 600
[1] Pulse test: |
5.4. bc327_bc328.pdf Size:49K _fairchild_semi  |
 | BC327/328
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages
Complement to BC337/BC338
TO-92
1
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCES Collector-Emitter Voltage
: BC327 -50 V
: BC328 -30 V
VCEO Collector-Emitter Voltage
: BC327 -45 V
: BC328 -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current (DC) -800 mA
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150 C
TSTG Storage Temperature -55 ~ 150 C
Electrical Characteristics Ta=25C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0
: BC327 -45 V
: BC328 -25 V
BVCES Collector-Emitter Breakdown Voltage IC= -0.1mA, VBE=0
: BC327 -50 V
: BC328 -30 V
BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 -5 V
ICES Collector Cut-off Current
: BC327 V |
5.5. bc327_bc328_to-92.pdf Size:384K _mcc  |
 | BC327-16/25/40
MCC
TM
Micro Commercial Components
BC328-16/25/40
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
PNP
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Plastic-Encapsulate
Capable of 0.625Watts of Power Dissipation.
Collector-current : -0.8A
Transistors
Collector-base Voltage :VCBO=-50V(BC327) , VCBO=-30V(BC328)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
TO-92
Maximum Ratings
A E
Operating temperature : -55 to +150
Storage temperature : -55 to +150
Electrical Characteristics @ 25 Unless Otherwise Specified
Symbol Parameter Min Max Units
B
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage --- Vdc
(IC=-10mAdc, IB=0) BC327 -45
BC328 -25
V(BR)CBO Collector-Base Breakdown Voltage --- Vdc
(IC=-100Adc, IE=0) BC327 -50
BC328 -30
V(BR)EBO Collecto |
5.6. bc327_bc32716_bc32725_bc32740.pdf Size:68K _onsemi  |
 | BC327, BC327-16,
BC327-25, BC327-40
Amplifier Transistors
PNP Silicon
http://onsemi.com
Features
Pb-Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
2
BASE
Rating Symbol Value Unit
Collector -Emitter Voltage VCEO -45 Vdc
3
Collector -Base Voltage VCES -50 Vdc
EMITTER
Collector -Emitter Voltage VEBO -5.0 Vdc
Collector Current - Continuous IC -800 mAdc
Total Power Dissipation @ TA = 25C PD 625 mW
Derate above TA = 25C 5.0 mW/C
TO-92
Total Power Dissipation @ TA = 25C PD 1.5 W
CASE 29
Derate above TA = 25C 12 mW/C
STYLE 17
Operating and Storage Junction TJ, Tstg -55 to +150 C
Temperature Range
1
1
2
2
THERMAL CHARACTERISTICS
3
3
STRAIGHT LEAD BENT LEAD
Characteristic Symbol Max Unit
BULK PACK TAPE & REEL
Thermal Resistance, Junction-to-Ambient RqJA 200 C/W
AMMO PACK
Thermal Resistance, Junction-to-Case RqJC 83.3 C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
MARKING DIAGRAM
Ratings are stress ratings only |
5.7. bc327~bc328.pdf Size:293K _secos  |
 | BC327 / BC328
PNP Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURE
G H
Power Dissipation
1Collector
1
1
1
J
2Base
2
2
2
CLASSIFICATION OF hFE (1)
3
A D 3Emitter
3
3
Product-Rank BC327-16 BC327-25 BC327-40
B
Millimeter
REF.
Min. Max.
Product-Rank BC328-16 BC328-25 BC328-40
A 4.40 4.70
K
B 4.30 4.70
Range 100~250 160~400 250~630
C 12.70 -
D 3.30 3.81
E 0.36 0.56
E C F
F 0.36 0.51
G 1.27 TYP.
H 1.10 -
J 2.42 2.66
K 0.36 0.76
Collector
1
2
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
BC327 -50
Collector to Base Voltage VCBO V
BC328 -30
BC327 -45
Collector to Emitter Voltage VCEO V
BC328 -25
Emitter to Base Voltage V -5 V
EBO
Collector Current - Continuous I -800 mA
C
Collector Power Dissipation P 625 mW
C
Junction, Storage T |
5.8. bc327.pdf Size:378K _kec  |
 | SEMICONDUCTOR BC327
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
High Current : IC=-800mA.
DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA).
For Complementary with NPN type BC337.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
VCBO -50 V
Collector-Base Voltage
VCEO -45 V
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage -5 V
IC
Collector Current -800 mA
IB
Base Current -200 mA
IE
Emitter Current 800 mA
PC
Collector Power Dissipation 625 mW
Tj
Junction Temperature 150
Tstg -55 150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=-45V, IE=0
Collector Cut-off Current - - -100 nA
hFE VCE=-1V, IC=-100mA
DC Current Gain (Note) 100 - 630
VCE(sat) IC=-500mA, IB=-50mA
Collector-Emitter Saturation Voltage - - -0.7 V
VBE(ON) VCE=-1V, IC=-300mA
Base-Emitter Voltage - - -1.2 V
fT VCE=-5V, IC=-10mA, f=100MH |
5.9. bc327_bc328.pdf Size:471K _wietron  |
 | BC327/BC328
PNP General Purpose Transistor
COLLECTOR
1
P b Lead(Pb)-Free
TO-92
2
BASE
1
3 2
3
EMITTER
Maximum Ratings(TA=25°C unless otherwise noted)
Rating Symbol BC327 BC328 Unit
VCBO
Collector-Base voltage
-50 -30 V
VCEO
V
Collector-Emitter voltage -45 -25
VEBO
V
Emitter-Base voltage
-5.0 -5.0
Collector Current Continuous lC
mA
800
Total Device Dissipation
PD
625 mW/°C
Alumina Substrate,TA=25°C
TJ
Operating Junction Temperature Range -55 to +150
°C
Tstg °C
Storage Junction Temperature Range
-55 to +150
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC=-100µA, IE=0
BC327 V(BR)CBO -50 - -
V
BC328 -30
Collector-Emitter Breakdown Voltage
IC=-10mA, IB=0 V(BR)CEO -45 -
BC327 -
V
BC328 -25
Emitter-Base Breakdown Voltage
V(BR)EBO -5.0 - - V
BC327
IC=-10µA, IC=0
BC328
WEITRON
1/4 29-Jun-06
http://www.weitron.com.tw
BC327/BC328
ELECTRICAL CHARACTERISTICS( |
See also transistors datasheet: BC324
, BC325
, BC326
, BC327
, BC327-01
, BC327-10
, BC327-16
, BC327-25
, AC125
, BC327AP
, BC327BP
, BC327CP
, BC327L
, BC327P
, BC328
, BC328-01
, BC328-10
. Keywords| BC327-40
Datasheet | BC327-40
Datenblatt | BC327-40
RoHS | BC327-40
Distributor | | BC327-40
Application Notes | BC327-40
Component | BC327-40
Circuit | BC327-40
Schematic | | BC327-40
Equivalent | BC327-40
Cross Reference | BC327-40
Data Sheet | BC327-40
Fiche Technique |
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