BC328BP Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC328BP

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 18

Forward current transfer ratio (hFE), min: 160

Noise Figure, dB: -

Package of BC328BP transistor: TO92

BC328BP Equivalent Transistors - Cross-Reference Search

BC328BP PDF document for downloads:

5.1. bc327_bc328.pdf Size:160K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC327/D Amplifier Transistors PNP Silicon BC327,-16,-25 BC328,-16,-25 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC327 BC328 Unit CASE 29�04, STYLE 17 Collector�Emitter Voltage VCEO �45 �25 Vdc TO�92 (TO�226AA) Collector�Base Voltage VCBO �50 �30 Vdc Emitter�Base Voltage VEBO �5.0 Vdc Collector Current � Continuous IC �800 mAdc Total Device Dissipation @ TA = 25�C PD 625 mW Derate above 25�C 5.0 mW/�C Total Device Dissipation @ TC = 25�C PD 1.5 Watt Derate above 25�C 12 mW/�C Operating and Storage Junction TJ, Tstg �55 to +150 �C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 �C/W Thermal Resistance, Junction to Case RqJC 83.3 �C/W ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector�Emitter Breakdown Voltage V(BR)CE

5.2. bc327_bc328.pdf Size:49K _fairchild_semi

BC327/328 Switching and Amplifier Applications � Suitable for AF-Driver stages and low power output stages � Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25�C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC327 -50 V : BC328 -30 V VCEO Collector-Emitter Voltage : BC327 -45 V : BC328 -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 �C TSTG Storage Temperature -55 ~ 150 �C Electrical Characteristics Ta=25�C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 : BC327 -45 V : BC328 -25 V BVCES Collector-Emitter Breakdown Voltage IC= -0.1mA, VBE=0 : BC327 -50 V : BC328 -30 V BVEBO Emitter-Base Breakdown Voltage IE= -10�A, IC=0 -5 V ICES Collector Cut-off Current : BC327 V

5.3. bc327_bc328_to-92.pdf Size:384K _mcc

BC327-16/25/40 MCC TM Micro Commercial Components BC328-16/25/40 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features PNP � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate � Capable of 0.625Watts of Power Dissipation. � Collector-current : -0.8A Transistors � Collector-base Voltage :VCBO=-50V(BC327) , VCBO=-30V(BC328) � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 TO-92 Maximum Ratings A E � Operating temperature : -55 to +150 � Storage temperature : -55 to +150 Electrical Characteristics @ 25 Unless Otherwise Specified Symbol Parameter Min Max Units B OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage --- Vdc (IC=-10mAdc, IB=0) BC327 -45 BC328 -25 V(BR)CBO Collector-Base Breakdown Voltage --- Vdc (IC=-100�Adc, IE=0) BC327 -50 BC328 -30 V(BR)EBO Collecto

5.4. bc327~bc328.pdf Size:293K _secos

BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 1 1 1 J 2Base 2 2 2 CLASSIFICATION OF hFE (1) 3 A D 3Emitter 3 3 Product-Rank BC327-16 BC327-25 BC327-40 B Millimeter REF. Min. Max. Product-Rank BC328-16 BC328-25 BC328-40 A 4.40 4.70 K B 4.30 4.70 Range 100~250 160~400 250~630 C 12.70 - D 3.30 3.81 E 0.36 0.56 E C F F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector 1 2 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit BC327 -50 Collector to Base Voltage VCBO V BC328 -30 BC327 -45 Collector to Emitter Voltage VCEO V BC328 -25 Emitter to Base Voltage V -5 V EBO Collector Current - Continuous I -800 mA C Collector Power Dissipation P 625 mW C Junction, Storage T

5.5. bc328.pdf Size:335K _kec

SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA). N DIM MILLIMETERS For Complementary with NPN type BC338. A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VCBO -30 V Collector-Base Voltage M 0.45 MAX N 1.00 1 2 3 VCEO -25 V Collector-Emitter Voltage VEBO 1. COLLECTOR Emitter-Base Voltage -5 V 2. BASE IC Collector Current -800 mA 3. EMITTER IE Emitter Current 800 mA PC Collector Power Dissipation 625 mW TO-92 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-25V, IE=0 Collector Cut-off Current - - -100 nA hFE VCE=-1V, IC=-100mA DC C

5.6. bc327_bc328.pdf Size:471K _wietron

BC327/BC328 PNP General Purpose Transistor COLLECTOR 1 P b Lead(Pb)-Free TO-92 2 BASE 1 3 2 3 EMITTER Maximum Ratings(TA=25°C unless otherwise noted) Rating Symbol BC327 BC328 Unit VCBO Collector-Base voltage -50 -30 V VCEO V Collector-Emitter voltage -45 -25 VEBO V Emitter-Base voltage -5.0 -5.0 Collector Current Continuous lC mA 800 Total Device Dissipation PD 625 mW/°C Alumina Substrate,TA=25°C TJ Operating Junction Temperature Range -55 to +150 °C Tstg °C Storage Junction Temperature Range -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=-100µA, IE=0 BC327 V(BR)CBO -50 - - V BC328 -30 Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 V(BR)CEO -45 - BC327 - V BC328 -25 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 - - V BC327 IC=-10µA, IC=0 BC328 WEITRON 1/4 29-Jun-06 http://www.weitron.com.tw BC327/BC328 ELECTRICAL CHARACTERISTICS(

See also transistors datasheet: BC327P , BC328 , BC328-01 , BC328-10 , BC328-16 , BC328-25 , BC328-40 , BC328AP , TIP31 , BC328CP , BC328L , BC328P , BC329 , BC329B , BC329C , BC330 , BC330B .

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