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BC338-25
  BC338-25
  BC338-25
  BC338-25
 
BC338-25
  BC338-25
  BC338-25
  BC338-25
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTB989
KTC1001 .. KTN2222AE
KTN2222AS .. MCH4009
MCH4013 .. MJ11012
MJ11013 .. MJD47T4
MJD47TF .. MJE6044
MJE6045 .. MMBC1321Q4
MMBC1321Q5 .. MMBT6520L
MMBT6521L .. MP14B
MP14I .. MP5137
MP5138 .. MPS3397
MPS3398 .. MPSH54
MPSH55 .. MRF9511LT1
MRF957T1 .. NA12HG
NA12HH .. NB014EK
NB014EL .. NB212YH
NB212YI .. NKT13429
NKT135 .. NPS5449
NPS5550 .. NTE22
NTE226 .. OC822
OC823 .. PBSS5320T
PBSS5320X .. PMBT2369
PMBT2907 .. PRF949
PRF957 .. RCA1A16
RCA1A17 .. RN16J1
RN1701 .. RN2901AFS
RN2901FE .. S1770
S1784 .. SDT9303
SDT9304 .. SJ5436
SJ5437 .. SRA2219EF
SRA2219M .. STC5554
STC5555 .. SZD31CNPN
SZD31CPNP .. TA2511
TA2512 .. TIP145
TIP145F .. TIS45
TIS47 .. TN4122
TN4123 .. TP930A
TP930R .. UN1110S
UN1111 .. UN921BJ
UN921CJ .. ZT404P
ZT41 .. ZTX4403K
ZTX4403L .. ZXTP558L
ZXTP717MA .. ZXTPS720MC
 
BC338-25 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BC338-25 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC338-25

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.625

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 160

Noise Figure, dB: -

Package of BC338-25 transistor: TO92

BC338-25 Equivalent Transistors - Cross-Reference Search

BC338-25 PDF doc:

4.1. bc337-16-25-40_bc338-16-25-40.pdf Size:234K _mcc

BC338-25
BC338-25
MCC BC337-16/25/40 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components BC338-16/25/40 CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN • Capable of 0.625Watts of Power Dissipation. • Collector-current 0.8A Plastic-Encapsulate • Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) Transistors • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 TO-92 Maximum Ratings • Operating temperature : -55 to +150 A E • Storage temperature : -55 to +150 Electrical Characteristics @ 25 Unless Otherwise Specified Symbol Parameter Min Max Units B OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage --- Vdc (IC=10mAdc, IB=0) BC337 45 BC338 25 V(BR)CBO Collector-Base Breakdown Voltage --- Vdc (IC=100µAdc, IE=0) C BC337 50 BC338 30 V(BR)EBO Collector-Emitter

5.1. bc337_bc338.pdf Size:119K _motorola

BC338-25
BC338-25
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO 45 25 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)

5.2. bc337_bc338_1.pdf Size:163K _motorola

BC338-25
BC338-25
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO 45 25 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)

5.3. bc337_bc338.pdf Size:27K _fairchild_semi

BC338-25
BC338-25
BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC337 50 V : BC338 30 V VCEO Collector-Emitter Voltage : BC337 45 V : BC338 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 : BC337 45 V : BC338 25 V BVCES Collector-Emitter Breakdown Voltage IC=0.1mA, VBE=0 : BC337 50 V : BC338 30 V BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 5 V ICES Collector Cut-off Current : BC337 VCE=45V, IB=0 2 1

5.4. bc337-a_bc338.pdf Size:65K _central

BC338-25
BC338-25
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.5. sbc338.pdf Size:192K _auk

BC338-25
BC338-25
SBC338 NPN Silicon Transistor Descriptions PIN Connection • High current application C • Switching application B Features • Suitable for AF-Driver stage and E low power output stages • Complementary pair with SBC328 TO-92 Ordering Information Type NO. Marking Package Code SBC338 SBC338 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 30 V Collector-Emitter voltage VCEO 25 V Emitter-Base voltage VEBO 5 V Collector current IC 800 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 25 - - V Base-Emitter turn on voltage VBE(ON) VCE=1V, IC=300mA - - 1.2 V Collector-Emitter saturation voltage VCE(sat) IC=500mA, IB=50mA - - 700 mV Collector cut-off current ICBO VCB=30V, IE=0 - -

5.6. bc337~bc338.pdf Size:362K _secos

BC338-25
BC338-25
BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 1 1 1 2Base 2 2 2 J 3Emitter 3 3 3 CLASSIFICATION OF hFE A D Product-Rank BC337-16 BC337-25 BC337-40 Millimeter REF. B Min. Max. A 4.40 4.70 Product-Rank BC338-16 BC338-25 BC338-40 B 4.30 4.70 K C 12.70 - Range 100~250 160~400 250~630 D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector 1 2 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit BC337 50 Collector to Base Voltage VCBO V BC338 30 BC337 45 Collector to Emitter Voltage VCEO V BC338 25 Emitter to Base Voltage V 5 V EBO Collector Current - Continuous I 800 mA C Total Device Dissipation P 625 mW D Junction, Storage Temperature T

5.7. bc327_bc328_bc337_bc338.pdf Size:117K _cdil

BC338-25
BC338-25
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC337/A BC338 NPN TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E B C General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC327/337 BC327A/337A BC328/338 UNITS Collector Emitter Voltage VCEO 45 60 25 V Collector Emitter Voltage VCES 50 60 30 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 800 mA Collector Current Peak ICM 1000 mA Emitter Current Peak IEM 1000 mA Base Current Continuous IB 100 mA Base Current Peak IBM 200 mA Power Dissipation at Ta=25?C PD 625 mW Derate Above 25?C 5 mW/?C Operating And Storage Junction Tj, Tstg - 65 to +150 ?C Temperature Range THERMAL RESISTANCE Junction to Ambient in free air Rth (j-a) 200 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C

5.8. bc338.pdf Size:338K _kec

BC338-25
BC338-25
SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES High Current : IC=800mA. DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA). N DIM MILLIMETERS For Complementary with PNP type BC328. A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VCBO Collector-Base Voltage 30 V M 0.45 MAX N 1.00 VCEO 1 2 3 Collector-Emitter Voltage 25 V VEBO 1. COLLECTOR Emitter-Base Voltage 5 V 2. BASE IC Collector Current 800 mA 3. EMITTER IE Emitter Current -800 mA PC Collector Power Dissipation 625 mW TO-92 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=25V, IE=0 Collector Cut-off Current - - 100 nA hFE VCE=1V, IC=100mA DC Current Gain

5.9. bc337_bc338.pdf Size:256K _wietron

BC338-25
BC338-25
BC337/BC338 NPN General Purpose Transistor COLLECTOR 1 P b Lead(Pb)-Free TO-92 2 BASE 1 3 2 3 EMITTER Maximum Ratings(TA=25°C unless otherwise noted) Rating Symbol BC337 BC338 Unit VCBO Collector-Base voltage 50 30 V VCEO V Collector-Emitter voltage 45 25 VEBO V Emitter-Base voltage 5.0 5.0 Collector Current Continuous lC mA 800 Total Device Dissipation PD 625 mW/°C Alumina Substrate,TA=25°C TJ Operating Junction Temperature Range -55 to +150 °C Tstg °C Storage Junction Temperature Range -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=100µA, IE=0 BC337 V(BR)CBO 50 - - V BC338 30 Collector-Emitter Breakdown Voltage IC=10mA, IB=0 V(BR)CEO 45 BC337 - - V BC338 25 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 - - Vdc BC337 IC=10µA, IC=0 BC338 WEITRON 1/3 30-Jun-06 http://www.weitron.com.tw BC337/BC338 ELECTRICAL CHARACTERISTICS(TA=25°C u

See also transistors datasheet: BC337BPL , BC337CP , BC337P , BC337PL , BC338 , BC338-01 , BC338-10 , BC338-16 , BC547C , BC338-40 , BC338AP , BC338BP , BC338CP , BC338P , BC340 , BC340-10 , BC340-16 .

Keywords

 BC338-25 Datasheet  BC338-25 Datenblatt  BC338-25 RoHS  BC338-25 Distributor
 BC338-25 Application Notes  BC338-25 Component  BC338-25 Circuit  BC338-25 Schematic
 BC338-25 Equivalent  BC338-25 Cross Reference  BC338-25 Data Sheet  BC338-25 Fiche Technique

 

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