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BC338-25 Transistor (IC) Datasheet. Cross Reference Search. BC338-25 Equivalent

Type Designator: BC338-25

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.625

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 160

Noise Figure, dB: -

Package of BC338-25 transistor: TO92

BC338-25 Transistor Equivalent Substitute - Cross-Reference Search

BC338-25 PDF doc:

4.1. bc337-16-25-40_bc338-16-25-40.pdf Size:234K _mcc

BC338-25
BC338-25

MCC BC337-16/25/40 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components BC338-16/25/40 CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN • Capable of 0.625Watts of Power Dissipation. • Collector-current 0.8A Plastic-Encapsulate • Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) Transistors • Lead Free Finish/RoHS Co

5.1. bc337_bc338_1.pdf Size:163K _motorola

BC338-25
BC338-25

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO 45 25 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Coll

5.2. bc337_bc338.pdf Size:119K _motorola

BC338-25
BC338-25

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO 45 25 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Coll

5.3. bc337_bc338.pdf Size:27K _fairchild_semi

BC338-25
BC338-25

BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC337 50 V : BC338 30 V VCEO Collector-Emitter Voltage : B

5.4. bc337-a_bc338.pdf Size:65K _central

BC338-25
BC338-25

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.5. sbc338.pdf Size:192K _auk

BC338-25
BC338-25

SBC338 NPN Silicon Transistor Descriptions PIN Connection • High current application C • Switching application B Features • Suitable for AF-Driver stage and E low power output stages • Complementary pair with SBC328 TO-92 Ordering Information Type NO. Marking Package Code SBC338 SBC338 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratin

5.6. bc337~bc338.pdf Size:362K _secos

BC338-25
BC338-25

BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 1 1 1 2Base 2 2 2 J 3Emitter 3 3 3 CLASSIFICATION OF hFE A D Product-Rank BC337-16 BC337-25 BC337-40 Millimeter REF. B Min. Max. A 4.40 4.70 Product-Rank BC33

5.7. bc327_bc328_bc337_bc338.pdf Size:117K _cdil

BC338-25
BC338-25

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC337/A BC338 NPN TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E B C General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DE

5.8. bc338.pdf Size:338K _kec

BC338-25
BC338-25

SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES High Current : IC=800mA. DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA). N DIM MILLIMETERS For Complementary with PNP type BC328. A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00

5.9. bc337_bc338.pdf Size:256K _wietron

BC338-25
BC338-25

BC337/BC338 NPN General Purpose Transistor COLLECTOR 1 P b Lead(Pb)-Free TO-92 2 BASE 1 3 2 3 EMITTER Maximum Ratings(TA=25°C unless otherwise noted) Rating Symbol BC337 BC338 Unit VCBO Collector-Base voltage 50 30 V VCEO V Collector-Emitter voltage 45 25 VEBO V Emitter-Base voltage 5.0 5.0 Collector Current Continuous lC mA 800 Total Device Dissipation PD 625 mW/°C

5.10. bc337_bc338.pdf Size:78K _first_silicon

BC338-25
BC338-25

SEMICONDUCTOR BC337/338 TECHNICAL DATA BC337/BC338 TRANSISTOR (NPN) B C FEATURES High Current : IC=800mA. DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA). DIM MILLIMETERS For Complementary with PNP type BC327. A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) G 0.85 H 0.45 _ H J 14.00 + 0.50 L 2.30 Symb

See also transistors datasheet: BC337BPL , BC337CP , BC337P , BC337PL , BC338 , BC338-01 , BC338-10 , BC338-16 , BC547C , BC338-40 , BC338AP , BC338BP , BC338CP , BC338P , BC340 , BC340-10 , BC340-16 .

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