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BC338-25
  BC338-25
  BC338-25
 
BC338-25
  BC338-25
  BC338-25
 
BC338-25
  BC338-25
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
BC338-25 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BC338-25 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC338-25

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.625

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 20

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.8

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 60

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 160

Noise Figure, dB: -

Package of BC338-25 transistor: TO92

BC338-25 Equivalent Transistors - Cross-Reference Search

BC338-25 PDF doc:

4.1. bc337-16-25-40_bc338-16-25-40.pdf Size:234K _mcc

BC338-25
BC338-25
MCC BC337-16/25/40 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components BC338-16/25/40 CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN • Capable of 0.625Watts of Power Dissipation. • Collector-current 0.8A Plastic-Encapsulate • Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) Transistors • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 TO-92 Maximum Ratings • Operating temperature : -55 to +150 A E • Storage temperature : -55 to +150 Electrical Characteristics @ 25 Unless Otherwise Specified Symbol Parameter Min Max Units B OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage --- Vdc (IC=10mAdc, IB=0) BC337 45 BC338 25 V(BR)CBO Collector-Base Breakdown Voltage --- Vdc (IC=100µAdc, IE=0) C BC337 50 BC338 30 V(BR)EBO Collector-Emitter

5.1. bc337_bc338.pdf Size:119K _motorola

BC338-25
BC338-25
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO 45 25 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)

5.2. bc337_bc338_1.pdf Size:163K _motorola

BC338-25
BC338-25
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO 45 25 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)

5.3. bc337_bc338.pdf Size:27K _fairchild_semi

BC338-25
BC338-25
BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC337 50 V : BC338 30 V VCEO Collector-Emitter Voltage : BC337 45 V : BC338 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 : BC337 45 V : BC338 25 V BVCES Collector-Emitter Breakdown Voltage IC=0.1mA, VBE=0 : BC337 50 V : BC338 30 V BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 5 V ICES Collector Cut-off Current : BC337 VCE=45V, IB=0 2 1

5.4. bc337-a_bc338.pdf Size:65K _central

BC338-25
BC338-25
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.5. sbc338.pdf Size:192K _auk

BC338-25
BC338-25
SBC338 NPN Silicon Transistor Descriptions PIN Connection • High current application C • Switching application B Features • Suitable for AF-Driver stage and E low power output stages • Complementary pair with SBC328 TO-92 Ordering Information Type NO. Marking Package Code SBC338 SBC338 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 30 V Collector-Emitter voltage VCEO 25 V Emitter-Base voltage VEBO 5 V Collector current IC 800 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 25 - - V Base-Emitter turn on voltage VBE(ON) VCE=1V, IC=300mA - - 1.2 V Collector-Emitter saturation voltage VCE(sat) IC=500mA, IB=50mA - - 700 mV Collector cut-off current ICBO VCB=30V, IE=0 - -

5.6. bc337~bc338.pdf Size:362K _secos

BC338-25
BC338-25
BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 1 1 1 2Base 2 2 2 J 3Emitter 3 3 3 CLASSIFICATION OF hFE A D Product-Rank BC337-16 BC337-25 BC337-40 Millimeter REF. B Min. Max. A 4.40 4.70 Product-Rank BC338-16 BC338-25 BC338-40 B 4.30 4.70 K C 12.70 - Range 100~250 160~400 250~630 D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector 1 2 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit BC337 50 Collector to Base Voltage VCBO V BC338 30 BC337 45 Collector to Emitter Voltage VCEO V BC338 25 Emitter to Base Voltage V 5 V EBO Collector Current - Continuous I 800 mA C Total Device Dissipation P 625 mW D Junction, Storage Temperature T

5.7. bc327_bc328_bc337_bc338.pdf Size:117K _cdil

BC338-25
BC338-25
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC337/A BC338 NPN TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E B C General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC327/337 BC327A/337A BC328/338 UNITS Collector Emitter Voltage VCEO 45 60 25 V Collector Emitter Voltage VCES 50 60 30 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 800 mA Collector Current Peak ICM 1000 mA Emitter Current Peak IEM 1000 mA Base Current Continuous IB 100 mA Base Current Peak IBM 200 mA Power Dissipation at Ta=25?C PD 625 mW Derate Above 25?C 5 mW/?C Operating And Storage Junction Tj, Tstg - 65 to +150 ?C Temperature Range THERMAL RESISTANCE Junction to Ambient in free air Rth (j-a) 200 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C

5.8. bc338.pdf Size:338K _kec

BC338-25
BC338-25
SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES High Current : IC=800mA. DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA). N DIM MILLIMETERS For Complementary with PNP type BC328. A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VCBO Collector-Base Voltage 30 V M 0.45 MAX N 1.00 VCEO 1 2 3 Collector-Emitter Voltage 25 V VEBO 1. COLLECTOR Emitter-Base Voltage 5 V 2. BASE IC Collector Current 800 mA 3. EMITTER IE Emitter Current -800 mA PC Collector Power Dissipation 625 mW TO-92 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=25V, IE=0 Collector Cut-off Current - - 100 nA hFE VCE=1V, IC=100mA DC Current Gain

5.9. bc337_bc338.pdf Size:256K _wietron

BC338-25
BC338-25
BC337/BC338 NPN General Purpose Transistor COLLECTOR 1 P b Lead(Pb)-Free TO-92 2 BASE 1 3 2 3 EMITTER Maximum Ratings(TA=25°C unless otherwise noted) Rating Symbol BC337 BC338 Unit VCBO Collector-Base voltage 50 30 V VCEO V Collector-Emitter voltage 45 25 VEBO V Emitter-Base voltage 5.0 5.0 Collector Current Continuous lC mA 800 Total Device Dissipation PD 625 mW/°C Alumina Substrate,TA=25°C TJ Operating Junction Temperature Range -55 to +150 °C Tstg °C Storage Junction Temperature Range -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=100µA, IE=0 BC337 V(BR)CBO 50 - - V BC338 30 Collector-Emitter Breakdown Voltage IC=10mA, IB=0 V(BR)CEO 45 BC337 - - V BC338 25 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 - - Vdc BC337 IC=10µA, IC=0 BC338 WEITRON 1/3 30-Jun-06 http://www.weitron.com.tw BC337/BC338 ELECTRICAL CHARACTERISTICS(TA=25°C u

See also transistors datasheet: BC337BPL , BC337CP , BC337P , BC337PL , BC338 , BC338-01 , BC338-10 , BC338-16 , BC547C , BC338-40 , BC338AP , BC338BP , BC338CP , BC338P , BC340 , BC340-10 , BC340-16 .

Keywords

 BC338-25 Datasheet  BC338-25 Datenblatt  BC338-25 RoHS  BC338-25 Distributor
 BC338-25 Application Notes  BC338-25 Component  BC338-25 Circuit  BC338-25 Schematic
 BC338-25 Equivalent  BC338-25 Cross Reference  BC338-25 Data Sheet  BC338-25 Fiche Technique

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