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BC489A Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC489A

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.625

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 12

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of BC489A transistor: TO92

BC489A Equivalent Transistors - Cross-Reference Search

BC489A PDF document for downloads:

5.1. bc489rev.pdf Size:235K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC489/D High Current Transistors NPN Silicon BC489,A,B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit 3 Collector–Emitter Voltage VCEO 80 Vdc CASE 29–04, STYLE 17 Collector–Base Voltage VCBO 80 Vdc TO–92 (TO–226AA) Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 0.5 Adc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CEO 80 — — Vdc (IC = 10 mAdc, IB

5.2. bc489-a.pdf Size:81K _onsemi

BC489, BC489A High Current Transistors NPN Silicon Features http://onsemi.com • These are Pb-Free Devices* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc 3 Collector-Base Voltage VCBO 80 Vdc EMITTER Collector-Emitter Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 0.5 Adc Total Power Dissipation @ TA = 25°C PD 625 mW TO-92 Derate above TA = 25°C 5.0 mW/°C CASE 29 STYLE 17 Total Power Dissipation @ TA = 25°C PD 1.5 W Derate above TA = 25°C 12 mW/°C 1 1 Operating and Storage Junction TJ, Tstg -55 to +150 °C 2 2 3 3 Temperature Range STRAIGHT LEAD BENT LEAD THERMAL CHARACTERISTICS BULK PACK TAPE & REEL AMMO PACK Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W MARKING DIAGRAM Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Re

See also transistors datasheet: BC488-18 , BC488-5 , BC488A , BC488B , BC488L , BC489 , BC489-18 , BC489-5 , 2SA733 , BC489B , BC489L , BC490 , BC490-18 , BC490-5 , BC490A , BC490B , BC490L .

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