BC490 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC490

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.625

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 12

Forward current transfer ratio (hFE), min: 60

Noise Figure, dB: -

Package of BC490 transistor: TO92

BC490 Equivalent Transistors - Cross-Reference Search

BC490 PDF document for downloads:

1.1. bc490rev.pdf Size:249K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC490/D High Current Transistors PNP Silicon BC490,A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit 3 Collector–Emitter Voltage VCEO –80 Vdc CASE 29–04, STYLE 17 Collector–Base Voltage VCBO –80 Vdc TO–92 (TO–226AA) Emitter–Base Voltage VEBO –4.0 Vdc Collector Current — Continuous IC –0.5 Adc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CEO –80 — — Vdc (IC = –10 mAdc,

1.2. bc490.pdf Size:249K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC490/D High Current Transistors PNP Silicon BC490,A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit 3 Collector–Emitter Voltage VCEO –80 Vdc CASE 29–04, STYLE 17 Collector–Base Voltage VCBO –80 Vdc TO–92 (TO–226AA) Emitter–Base Voltage VEBO –4.0 Vdc Collector Current — Continuous IC –0.5 Adc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) V(BR)CEO –80 — — Vdc (IC = –10 mAdc,

1.3. bc490.pdf Size:78K _onsemi

BC490 High Current Transistors PNP Silicon Features • This is a Pb-Free Device* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector - Emitter Voltage VCEO -80 Vdc BASE Collector - Base Voltage VCBO -80 Vdc 3 Emitter - Base Voltage VEBO -4.0 Vdc EMITTER Collector Current - Continuous IC -1.0 Adc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C TO-92 Operating and Storage Junction TJ, Tstg -55 to +150 °C CASE 29 Temperature Range STYLE 17 THERMAL CHARACTERISTICS 1 2 Characteristic Symbol Max Unit 3 STRAIGHT LEAD Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W BULK PACK Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to

See also transistors datasheet: BC488B , BC488L , BC489 , BC489-18 , BC489-5 , BC489A , BC489B , BC489L , 2SC5200 , BC490-18 , BC490-5 , BC490A , BC490B , BC490L , BC507 , BC507A , BC507B .

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