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2N100
  2N100
  2N100
 
2N100
  2N100
  2N100
 
2N100
  2N100
 
 
List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
2N100 All Transistors Datasheet. BJT, Power MOSFET, IGBT, IC Catalog
 

2N100 Transistor (IC) Datasheet. Cross Reference Search. 2N100 Equivalent

Type Designator: 2N100

Material of transistor: Ge

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.025

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.005

Maksimalna temperatura (Tj), °C: 50

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N100 transistor: TO22

2N100 Equivalent Transistors - Cross-Reference Search

 

2N100 PDF doc:

1.1. fqd2n100_fqu2n100.pdf Size:731K _fairchild_semi

2N100
2N100
January 2009 QFET FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well RoHS Compliant suited for electronic lamp starter and ballast. D D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G D-PAK I-PAK ? ? ? ? ? ? ? ? G S FQD Series FQU Series G D S S Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FQD2N100/FQU2N100 Units VDSS Drain

1.2. ixta2n100_ixtp2n100.pdf Size:76K _ixys

2N100
2N100
High Voltage VDSS = 1000 V IXTA 2N100 MOSFET ID25 = 2 A IXTP 2N100 ? RDS(on) = 7 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25C2 A IDM TC = 25C, pulse width limited by TJM 8 A TO-263 AA (IXTA) PD TC = 25C 100 W TJ -55 ... +150 C TJM 150 C G Tstg -55 ... +150 C S D (TAB) Md Mounting torque 1.13/10 Nm/lb.in. Weight 4 g G = Gate, D = Drain, Maximum lead temperature for soldering 300 C S = Source, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Features International standard packages Low RDS (on) HDMOSTM process Symbol Test Conditions Characteristic Values Rugged polysilicon gate cell structure (TJ = 25C, unless otherwise specified) Low package inductance (< 5 nH) min. typ. max. - easy to drive and to protect Fast switching times VDSS VGS = 0 V,

1.3. ixft10n100_ixft12n100.pdf Size:556K _ixys

2N100
2N100
VDSS ID25 RDS(on) HiPerFETTM ? IXFT 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFT12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ? trr ? ? 250 ns ? ? Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 Case Style VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V G (TAB) VGS Continuous 20 V S VGSM Transient 30 V ID25 TC = 25C 10N100 10 A 12N100 12 A IDM TC = 25C, pulse width limited by TJM 10N100 40 A G = Gate, TAB = Drain 12N100 48 A S = Source, IAR TC = 25C 10N100 10 A 12N100 12 A EAR TC = 25C30 mJ dv/dt IS ? IDM, di/dt ? 100 A/s, VDD ? VDSS, 5 V/ns Features TJ ? 150C, RG = 2 ? International standard package PD TC = 25C 300 W Low RDS (on) HDMOSTM process TJ -55 ... +150 C Rugged polysilicon gate cell TJM 150 C structure Tstg -55 ... +150 C Unclamped Inductive Switching (UIS) rated TL 1.6 mm (0.062 in.) from case fo

1.4. ixfr10n100q_ixfr12n100q.pdf Size:33K _ixys

2N100
2N100
Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 12N100Q 1000 V 10 A 1.05 W ISOPLUS247TM Q CLASS IXFR 10N100Q 1000 V 9 A 1.20 W (Electrically Isolated Back Surface) trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V G D Isolated back surface* ID25 TC = 25°C 12N100 10 A 10N100 9 A IDM TC = 25°C, Pulse width limited by TJM 12N100 48 A G = Gate D = Drain 10N100 40 A S = Source IAR TC = 25°C 12N100 12 A 10N100 10 A * Patent pending EAR TC = 25°C30 mJ Features dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS 5 V/ns TJ £ 150°C, RG = 2 W • Silicon chip on Direct-Copper-Bond PD TC = 25°C 250 W substrate - High power dissipation TJ -55 ... +150 °C - Isolated mounting surface TJM 150 °C - 250

1.5. ixga12n100u1_ixgp12n100u1_ixga12n100au1_ixgp12n100au1.pdf Size:116K _ixys

2N100
2N100
VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100U1 1000 V 24 A 3.5 V Combi Pack IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220AB(IXGP) VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263 AA (IXGA) IC25 TC = 25C24 A IC90 TC = 90C12 A ICM TC = 25C, 1 ms 48 A G SSOA VGE = 15 V, TVJ = 125C, RG = 150 W ICM = 24 A E C (TAB) (RBSOA) Clamped inductive load, L = 300 mH @ 0.8 VCES PC TC = 25C 100 W TJ -55 ... +150 C Features TJM 150 C International standard packages Tstg -55 ... +150 C JEDEC TO-220AB and TO-263AA IGBT with antiparallel FRED in one Md Mounting torque with screw M3 0.45/4 Nm/lb.in. package Mounting torque with screw M3.5 0.55/5 Nm/lb.in. Second generation HDMOSTM process Weight 4g Low VCE(sat) - for minimum on-state conduction Maximum lead temperature for soldering 300 C losses 1.6 mm (0.062 in.) fr

1.6. ixft12n100q_ixfh12n100q_ixft10n100q_ixfh10n100q.pdf Size:144K _ixys

2N100
2N100
VDSS ID25 RDS(on) HiPerFETTM Ω IXFH/IXFT12N100Q 1000 V 12 A 1.05 Ω Ω Ω Ω Power MOSFETs Ω IXFH/IXFT10N100Q 1000 V 10 A 1.20 Ω Ω Ω Ω Q Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 12N100Q 12 A 10N100Q 10 A IDM TC = 25°C, 12N100Q 48 A TO-268 (D3) ( IXFT) pulse width limited by TJM 10N100Q 40 A IAR TC = 25°C 12N100Q 12 A 10N100Q 10 A G EAR TC = 25°C 30 mJ(TAB) S dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns TJ ≤ 150°C, RG = 2 Ω G = Gate D = Drain PD TC = 25°C 300 W S = Source TAB = Drain TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL 1.6 mm (0.063 in) from case for 10 s 300 °C Features Md Mounting torque 1.13/10 Nm/lb.in. IXYS advanced l

1.7. ixgh12n100_ixgh12n100a.pdf Size:35K _ixys

2N100
2N100
VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V VGES Continuous 20 V C (TAB) G C VGEM Transient 30 V E IC25 TC = 25C24 A G = Gate C = Collector IC90 TC = 90C12 A E = Emitter TAB = Collector ICM TC = 25C, 1 ms 48 A SSOA VGE= 15 V, TVJ = 125C, RG = 150 W ICM = 24 A (RBSOA) Clamped inductive load, L = 300 mH @ 0.8 VCES PC TC = 25C 100 W TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Md Mounting torque (M3) 1.13/10 Nm/lb.in. Features Weight 6g International standard package JEDEC TO-247 AD Maximum lead temperature for soldering 300 C 2nd generation HDMOSTM process 1.6 mm (0.062 in.) from case for 10 s Low VCE(sat) - for low on-state conduction losses High current handling capability Symbol Test Conditions Characteristic Values MOS Gate turn-on (T

1.8. ixth10n100_ixtm10n100_ixth12n100_ixtm12n100.pdf Size:105K _ixys

2N100
2N100
VDSS ID25 RDS(on) MegaMOSTMFET Ω Ω IXTH / IXTM 10N100 1000 V 10 A 1.20 Ω Ω Ω Ω IXTH / IXTM 12N100 1000 V 12 A 1.05 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C 10N100 10 A TO-204 AA (IXTM) 12N100 12 A IDM TC = 25°C, pulse width limited by TJM 10N100 40 A 12N100 48 A PD TC = 25°C 300 W TJ -55 ... +150 °C G TJM 150 °C G = Gate, D = Drain, Tstg -55 ... +150 °C S = Source, TAB = Drain Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 300 °C Features 1.6 mm (0.062 in.) from case for 10 s International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times S

1.9. ixfh10n100_ixfm10n100_ixfh12n100_ixfm12n100.pdf Size:570K _ixys

2N100
2N100
VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFH/IXFM 12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode ? ? 250 ns ? ? High dv/dt, Low trr, HDMOSTM Family trr ? Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25C 10N100 10 A 12N100 12 A IDM TC = 25C, pulse width limited by TJM 10N100 40 A TO-204 AA (IXFM) 12N100 48 A IAR TC = 25C 10N100 10 A 12N100 12 A EAR TC = 25C30 mJ dv/dt IS ? IDM, di/dt ? 100 A/s, VDD ? VDSS, 5 V/ns TJ ? 150C, RG = 2 ? G D PD TC = 25C 300 W G = Gate, D = Drain, S = Source, TAB = Drain TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Features TL 1.6 mm (0.062 in.) from case for 10 s 300 C International standard packages Md Mounting torque 1.13/10 Nm/lb.in. Low RDS (on) HDMOSTM process Rugged polysilicon

1.10. ixga12n100_ixgp12n100_ixga12n100a_ixgp12n100a.pdf Size:51K _ixys

2N100
2N100
VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V G VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25C24 A TO-263 (IXGA) IC90 TC = 90C12 A ICM TC = 25C, 1 ms 48 A G SSOA VGE = 15 V, TVJ = 125C, RG = 150 W ICM = 24 A E C (TAB) (RBSOA) Clamped inductive load, L = 300 mH @ 0.8 VCES PC TC = 25C 100 W TJ -55 ... +150 C Features TJM 150 C International standard packages JEDEC TO-220AB and TO-263AA Tstg -55 ... +150 C Second generation HDMOSTM Md Mounting torque with screw M3 0.45/4 Nm/lb.in. process Mounting torque with screw M3.5 0.55/5 Nm/lb.in. Low VCE(sat) Weight 4g - for minimum on-state conduction Maximum lead temperature for soldering 300 C losses 1.6 mm (0.062 in.) from case for 10 s MOS Gate turn-on - drive simplicity Applica

1.11. aod2n100.pdf Size:352K _aosemi

2N100
2N100
AOD2N100 1000V,2A N-Channel MOSFET General Description Product Summary The AOD2N100 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver VDS 1100V@150℃ high levels of performance and robustness in popular AC- ID (at VGS=10V) 2A DC applications. RDS(ON) (at VGS=10V) < 9Ω By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested! 100% Rg Tested! TO252 DPAK D Top View Bottom View D D G G S S S G AOD2N100 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 1000 V Drain-Source Voltage VDS 1000 V Gate-Source Voltage VGS ±30 V TC=25°C 2 Continuous Drain ID CurrentB TC=100°C 1.2 A Pulsed Drain Current C IDM 7 Avalanche Current C IAR 1.9 A Repetitive avalanche energy C EAR 54 mJ Single pulsed avalanche energy H E

1.12. sdf12n100.pdf Size:155K _solitron

2N100
2N100


1.13. sdf2n100.pdf Size:171K _solitron

2N100
2N100


See also transistors datasheet: 2G604 , 2G605 , 2H1254 , 2H1255 , 2H1256 , 2H1257 , 2H1258 , 2H1259 , 2N2907 , 2N1000 , 2N1003 , 2N1004 , 2N1005 , 2N1006 , 2N1007 , 2N1008 , 2N1008A .

Keywords

 2N100 Datasheet  2N100 Design 2N100 MOSFET 2N100 Power
 2N100 RoHS Compliant 2N100 Service 2N100 Triacs 2N100 Semiconductor
 2N100 Database 2N100 Innovation 2N100 IC 2N100 Electricity

 

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