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2N100
  2N100
  2N100
  2N100
 
2N100
  2N100
  2N100
  2N100
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
2N100 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N100 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N100

Material of transistor: Ge

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.025

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.005

Maksimalna temperatura (Tj), °C: 50

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N100 transistor: TO22

2N100 Equivalent Transistors - Cross-Reference Search

2N100 PDF doc:

1.1. fqd2n100_fqu2n100.pdf Size:731K _fairchild_semi

2N100
2N100
January 2009 QFET FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well RoHS Compliant suited for electronic lamp starter and ballast. D D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G D-PAK I-PAK ? ? ? ? ? ? ? ? G S FQD Series FQU Series G D S S Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FQD2N100/FQU2N100 Units VDSS Drain

1.2. ixft10n100_ixft12n100.pdf Size:556K _ixys

2N100
2N100
VDSS ID25 RDS(on) HiPerFETTM ? IXFT 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFT12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ? trr ? ? 250 ns ? ? Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 Case Style VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V G (TAB) VGS Continuous 20 V S VGSM Transient 30 V ID25 TC = 25C 10N100 10 A 12N100 12 A IDM TC = 25C, pulse width limited by TJM 10N100 40 A G = Gate, TAB = Drain 12N100 48 A S = Source, IAR TC = 25C 10N100 10 A 12N100 12 A EAR TC = 25C30 mJ dv/dt IS ? IDM, di/dt ? 100 A/s, VDD ? VDSS, 5 V/ns Features TJ ? 150C, RG = 2 ? International standard package PD TC = 25C 300 W Low RDS (on) HDMOSTM process TJ -55 ... +150 C Rugged polysilicon gate cell TJM 150 C structure Tstg -55 ... +150 C Unclamped Inductive Switching (UIS) rated TL 1.6 mm (0.062 in.) from case fo

1.3. ixga12n100u1_ixgp12n100u1_ixga12n100au1_ixgp12n100au1.pdf Size:116K _ixys

2N100
2N100
VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100U1 1000 V 24 A 3.5 V Combi Pack IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220AB(IXGP) VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263 AA (IXGA) IC25 TC = 25C24 A IC90 TC = 90C12 A ICM TC = 25C, 1 ms 48 A G SSOA VGE = 15 V, TVJ = 125C, RG = 150 W ICM = 24 A E C (TAB) (RBSOA) Clamped inductive load, L = 300 mH @ 0.8 VCES PC TC = 25C 100 W TJ -55 ... +150 C Features TJM 150 C International standard packages Tstg -55 ... +150 C JEDEC TO-220AB and TO-263AA IGBT with antiparallel FRED in one Md Mounting torque with screw M3 0.45/4 Nm/lb.in. package Mounting torque with screw M3.5 0.55/5 Nm/lb.in. Second generation HDMOSTM process Weight 4g Low VCE(sat) - for minimum on-state conduction Maximum lead temperature for soldering 300 C losses 1.6 mm (0.062 in.) fr

1.4. ixth10n100_ixtm10n100_ixth12n100_ixtm12n100.pdf Size:105K _ixys

2N100
2N100
VDSS ID25 RDS(on) MegaMOSTMFET Ω Ω IXTH / IXTM 10N100 1000 V 10 A 1.20 Ω Ω Ω Ω IXTH / IXTM 12N100 1000 V 12 A 1.05 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C 10N100 10 A TO-204 AA (IXTM) 12N100 12 A IDM TC = 25°C, pulse width limited by TJM 10N100 40 A 12N100 48 A PD TC = 25°C 300 W TJ -55 ... +150 °C G TJM 150 °C G = Gate, D = Drain, Tstg -55 ... +150 °C S = Source, TAB = Drain Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 300 °C Features 1.6 mm (0.062 in.) from case for 10 s International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times S

1.5. ixfh10n100_ixfm10n100_ixfh12n100_ixfm12n100.pdf Size:570K _ixys

2N100
2N100
VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFH/IXFM 12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode ? ? 250 ns ? ? High dv/dt, Low trr, HDMOSTM Family trr ? Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25C 10N100 10 A 12N100 12 A IDM TC = 25C, pulse width limited by TJM 10N100 40 A TO-204 AA (IXFM) 12N100 48 A IAR TC = 25C 10N100 10 A 12N100 12 A EAR TC = 25C30 mJ dv/dt IS ? IDM, di/dt ? 100 A/s, VDD ? VDSS, 5 V/ns TJ ? 150C, RG = 2 ? G D PD TC = 25C 300 W G = Gate, D = Drain, S = Source, TAB = Drain TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Features TL 1.6 mm (0.062 in.) from case for 10 s 300 C International standard packages Md Mounting torque 1.13/10 Nm/lb.in. Low RDS (on) HDMOSTM process Rugged polysilicon

1.6. ixga12n100_ixgp12n100_ixga12n100a_ixgp12n100a.pdf Size:51K _ixys

2N100
2N100
VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V G VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25C24 A TO-263 (IXGA) IC90 TC = 90C12 A ICM TC = 25C, 1 ms 48 A G SSOA VGE = 15 V, TVJ = 125C, RG = 150 W ICM = 24 A E C (TAB) (RBSOA) Clamped inductive load, L = 300 mH @ 0.8 VCES PC TC = 25C 100 W TJ -55 ... +150 C Features TJM 150 C International standard packages JEDEC TO-220AB and TO-263AA Tstg -55 ... +150 C Second generation HDMOSTM Md Mounting torque with screw M3 0.45/4 Nm/lb.in. process Mounting torque with screw M3.5 0.55/5 Nm/lb.in. Low VCE(sat) Weight 4g - for minimum on-state conduction Maximum lead temperature for soldering 300 C losses 1.6 mm (0.062 in.) from case for 10 s MOS Gate turn-on - drive simplicity Applica

1.7. ixfr10n100q_ixfr12n100q.pdf Size:33K _ixys

2N100
2N100
Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 12N100Q 1000 V 10 A 1.05 W ISOPLUS247TM Q CLASS IXFR 10N100Q 1000 V 9 A 1.20 W (Electrically Isolated Back Surface) trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V G D Isolated back surface* ID25 TC = 25°C 12N100 10 A 10N100 9 A IDM TC = 25°C, Pulse width limited by TJM 12N100 48 A G = Gate D = Drain 10N100 40 A S = Source IAR TC = 25°C 12N100 12 A 10N100 10 A * Patent pending EAR TC = 25°C30 mJ Features dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS 5 V/ns TJ £ 150°C, RG = 2 W • Silicon chip on Direct-Copper-Bond PD TC = 25°C 250 W substrate - High power dissipation TJ -55 ... +150 °C - Isolated mounting surface TJM 150 °C - 250

1.8. ixft12n100q_ixfh12n100q_ixft10n100q_ixfh10n100q.pdf Size:144K _ixys

2N100
2N100
VDSS ID25 RDS(on) HiPerFETTM Ω IXFH/IXFT12N100Q 1000 V 12 A 1.05 Ω Ω Ω Ω Power MOSFETs Ω IXFH/IXFT10N100Q 1000 V 10 A 1.20 Ω Ω Ω Ω Q Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 12N100Q 12 A 10N100Q 10 A IDM TC = 25°C, 12N100Q 48 A TO-268 (D3) ( IXFT) pulse width limited by TJM 10N100Q 40 A IAR TC = 25°C 12N100Q 12 A 10N100Q 10 A G EAR TC = 25°C 30 mJ(TAB) S dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns TJ ≤ 150°C, RG = 2 Ω G = Gate D = Drain PD TC = 25°C 300 W S = Source TAB = Drain TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL 1.6 mm (0.063 in) from case for 10 s 300 °C Features Md Mounting torque 1.13/10 Nm/lb.in. IXYS advanced l

1.9. ixta2n100_ixtp2n100.pdf Size:76K _ixys

2N100
2N100
High Voltage VDSS = 1000 V IXTA 2N100 MOSFET ID25 = 2 A IXTP 2N100 ? RDS(on) = 7 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25C2 A IDM TC = 25C, pulse width limited by TJM 8 A TO-263 AA (IXTA) PD TC = 25C 100 W TJ -55 ... +150 C TJM 150 C G Tstg -55 ... +150 C S D (TAB) Md Mounting torque 1.13/10 Nm/lb.in. Weight 4 g G = Gate, D = Drain, Maximum lead temperature for soldering 300 C S = Source, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Features International standard packages Low RDS (on) HDMOSTM process Symbol Test Conditions Characteristic Values Rugged polysilicon gate cell structure (TJ = 25C, unless otherwise specified) Low package inductance (< 5 nH) min. typ. max. - easy to drive and to protect Fast switching times VDSS VGS = 0 V,

1.10. ixgh12n100_ixgh12n100a.pdf Size:35K _ixys

2N100
2N100
VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V VGES Continuous 20 V C (TAB) G C VGEM Transient 30 V E IC25 TC = 25C24 A G = Gate C = Collector IC90 TC = 90C12 A E = Emitter TAB = Collector ICM TC = 25C, 1 ms 48 A SSOA VGE= 15 V, TVJ = 125C, RG = 150 W ICM = 24 A (RBSOA) Clamped inductive load, L = 300 mH @ 0.8 VCES PC TC = 25C 100 W TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Md Mounting torque (M3) 1.13/10 Nm/lb.in. Features Weight 6g International standard package JEDEC TO-247 AD Maximum lead temperature for soldering 300 C 2nd generation HDMOSTM process 1.6 mm (0.062 in.) from case for 10 s Low VCE(sat) - for low on-state conduction losses High current handling capability Symbol Test Conditions Characteristic Values MOS Gate turn-on (T

1.11. aod2n100.pdf Size:352K _aosemi

2N100
2N100
AOD2N100 1000V,2A N-Channel MOSFET General Description Product Summary The AOD2N100 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver VDS 1100V@150℃ high levels of performance and robustness in popular AC- ID (at VGS=10V) 2A DC applications. RDS(ON) (at VGS=10V) < 9Ω By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested! 100% Rg Tested! TO252 DPAK D Top View Bottom View D D G G S S S G AOD2N100 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 1000 V Drain-Source Voltage VDS 1000 V Gate-Source Voltage VGS ±30 V TC=25°C 2 Continuous Drain ID CurrentB TC=100°C 1.2 A Pulsed Drain Current C IDM 7 Avalanche Current C IAR 1.9 A Repetitive avalanche energy C EAR 54 mJ Single pulsed avalanche energy H E

1.12. sdf2n100.pdf Size:171K _solitron

2N100
2N100


1.13. sdf12n100.pdf Size:155K _solitron

2N100
2N100


See also transistors datasheet: 2G604 , 2G605 , 2H1254 , 2H1255 , 2H1256 , 2H1257 , 2H1258 , 2H1259 , 2N2907 , 2N1000 , 2N1003 , 2N1004 , 2N1005 , 2N1006 , 2N1007 , 2N1008 , 2N1008A .

Keywords

 2N100 Datasheet  2N100 Datenblatt  2N100 RoHS  2N100 Distributor
 2N100 Application Notes  2N100 Component  2N100 Circuit  2N100 Schematic
 2N100 Equivalent  2N100 Cross Reference  2N100 Data Sheet  2N100 Fiche Technique

 

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