All Transistors Datasheet



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2N100
  2N100
  2N100
 
2N100
  2N100
  2N100
 
2N100
  2N100
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS5006
HEPS5011 .. HSE163
HSE164 .. IR2002
IR2500 .. K2112A
K2112B .. KRA225
KRA225M .. KRC122
KRC122M .. KRC886T
KRX101E .. KSB811
KSB811-G .. KSC5024
KSC5024-O .. KSE200
KSE210 .. KT216B
KT216V .. KT357A
KT357B .. KT661A
KT662A .. KT818AM
KT818B .. KT928A
KT928B .. KTC3198L
KTC3199 .. KU601
KU602 .. MD2218F
MD2219 .. MJ15023
MJ15024 .. MJE13007F
MJE13007M .. MJH11020
MJH11021 .. MMBT2219A
MMBT2221 .. MMBTA92W
MMBTA93 .. MP1558
MP1558A .. MP8212
MP8213 .. MPS4121
MPS4122 .. MQ2218A
MQ2219 .. MT3S20TU
MT3S21P .. NA22FY
NA22H .. NB022EL
NB022ET .. NB221F
NB221FG .. NKT275
NKT275J .. NR431HG
NR431HR .. NTE256
NTE2560 .. P30
P302 .. PDTA123JM
PDTA123JT .. PMD20K120
PMD20K150 .. PTB20082
PTB20091 .. RCA9202A
RCA9202B .. RN1913FS
RN1961 .. RN2967
RN2967CT .. S8550T
S876T .. SF115C
SF115D .. SMBT3904
SMBT3904PN .. SRC1210UF
SRC1211 .. STN2222A
STN2222AS .. T1497
T1501 .. TD162/1
TD162A .. TIP34F
TIP35 .. TIX888
TIX890 .. TN6707A
TN6714A .. TRF5174
TRF641 .. UN211E
UN211F .. UPT614
UPT615 .. ZTX109BL
ZTX109BM .. ZTX618
ZTX649 .. ZXTPS720MC
 
2N100 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N100 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N100

Material of transistor: Ge

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.025

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.005

Maksimalna temperatura (Tj), °C: 50

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N100 transistor: TO22

2N100 Equivalent Transistors - Cross-Reference Search

2N100 PDF doc:

1.1. fqd2n100_fqu2n100.pdf Size:731K _fairchild_semi

2N100
2N100
January 2009 QFET FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well RoHS Compliant suited for electronic lamp starter and ballast. D D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G D-PAK I-PAK ? ? ? ? ? ? ? ? G S FQD Series FQU Series G D S S Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FQD2N100/FQU2N100 Units VDSS Drain

1.2. ixft10n100_ixft12n100.pdf Size:556K _ixys

2N100
2N100
VDSS ID25 RDS(on) HiPerFETTM ? IXFT 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFT12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ? trr ? ? 250 ns ? ? Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 Case Style VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V G (TAB) VGS Continuous 20 V S VGSM Transient 30 V ID25 TC = 25C 10N100 10 A 12N100 12 A IDM TC = 25C, pulse width limited by TJM 10N100 40 A G = Gate, TAB = Drain 12N100 48 A S = Source, IAR TC = 25C 10N100 10 A 12N100 12 A EAR TC = 25C30 mJ dv/dt IS ? IDM, di/dt ? 100 A/s, VDD ? VDSS, 5 V/ns Features TJ ? 150C, RG = 2 ? International standard package PD TC = 25C 300 W Low RDS (on) HDMOSTM process TJ -55 ... +150 C Rugged polysilicon gate cell TJM 150 C structure Tstg -55 ... +150 C Unclamped Inductive Switching (UIS) rated TL 1.6 mm (0.062 in.) from case fo

1.3. ixga12n100u1_ixgp12n100u1_ixga12n100au1_ixgp12n100au1.pdf Size:116K _ixys

2N100
2N100
VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100U1 1000 V 24 A 3.5 V Combi Pack IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220AB(IXGP) VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263 AA (IXGA) IC25 TC = 25C24 A IC90 TC = 90C12 A ICM TC = 25C, 1 ms 48 A G SSOA VGE = 15 V, TVJ = 125C, RG = 150 W ICM = 24 A E C (TAB) (RBSOA) Clamped inductive load, L = 300 mH @ 0.8 VCES PC TC = 25C 100 W TJ -55 ... +150 C Features TJM 150 C International standard packages Tstg -55 ... +150 C JEDEC TO-220AB and TO-263AA IGBT with antiparallel FRED in one Md Mounting torque with screw M3 0.45/4 Nm/lb.in. package Mounting torque with screw M3.5 0.55/5 Nm/lb.in. Second generation HDMOSTM process Weight 4g Low VCE(sat) - for minimum on-state conduction Maximum lead temperature for soldering 300 C losses 1.6 mm (0.062 in.) fr

1.4. ixfh10n100_ixfm10n100_ixfh12n100_ixfm12n100.pdf Size:570K _ixys

2N100
2N100
VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFH/IXFM 12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode ? ? 250 ns ? ? High dv/dt, Low trr, HDMOSTM Family trr ? Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25C 10N100 10 A 12N100 12 A IDM TC = 25C, pulse width limited by TJM 10N100 40 A TO-204 AA (IXFM) 12N100 48 A IAR TC = 25C 10N100 10 A 12N100 12 A EAR TC = 25C30 mJ dv/dt IS ? IDM, di/dt ? 100 A/s, VDD ? VDSS, 5 V/ns TJ ? 150C, RG = 2 ? G D PD TC = 25C 300 W G = Gate, D = Drain, S = Source, TAB = Drain TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Features TL 1.6 mm (0.062 in.) from case for 10 s 300 C International standard packages Md Mounting torque 1.13/10 Nm/lb.in. Low RDS (on) HDMOSTM process Rugged polysilicon

1.5. ixga12n100_ixgp12n100_ixga12n100a_ixgp12n100a.pdf Size:51K _ixys

2N100
2N100
VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V G VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25C24 A TO-263 (IXGA) IC90 TC = 90C12 A ICM TC = 25C, 1 ms 48 A G SSOA VGE = 15 V, TVJ = 125C, RG = 150 W ICM = 24 A E C (TAB) (RBSOA) Clamped inductive load, L = 300 mH @ 0.8 VCES PC TC = 25C 100 W TJ -55 ... +150 C Features TJM 150 C International standard packages JEDEC TO-220AB and TO-263AA Tstg -55 ... +150 C Second generation HDMOSTM Md Mounting torque with screw M3 0.45/4 Nm/lb.in. process Mounting torque with screw M3.5 0.55/5 Nm/lb.in. Low VCE(sat) Weight 4g - for minimum on-state conduction Maximum lead temperature for soldering 300 C losses 1.6 mm (0.062 in.) from case for 10 s MOS Gate turn-on - drive simplicity Applica

1.6. ixta2n100_ixtp2n100.pdf Size:76K _ixys

2N100
2N100
High Voltage VDSS = 1000 V IXTA 2N100 MOSFET ID25 = 2 A IXTP 2N100 ? RDS(on) = 7 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25C2 A IDM TC = 25C, pulse width limited by TJM 8 A TO-263 AA (IXTA) PD TC = 25C 100 W TJ -55 ... +150 C TJM 150 C G Tstg -55 ... +150 C S D (TAB) Md Mounting torque 1.13/10 Nm/lb.in. Weight 4 g G = Gate, D = Drain, Maximum lead temperature for soldering 300 C S = Source, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Features International standard packages Low RDS (on) HDMOSTM process Symbol Test Conditions Characteristic Values Rugged polysilicon gate cell structure (TJ = 25C, unless otherwise specified) Low package inductance (< 5 nH) min. typ. max. - easy to drive and to protect Fast switching times VDSS VGS = 0 V,

1.7. ixgh12n100_ixgh12n100a.pdf Size:35K _ixys

2N100
2N100
VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V VGES Continuous 20 V C (TAB) G C VGEM Transient 30 V E IC25 TC = 25C24 A G = Gate C = Collector IC90 TC = 90C12 A E = Emitter TAB = Collector ICM TC = 25C, 1 ms 48 A SSOA VGE= 15 V, TVJ = 125C, RG = 150 W ICM = 24 A (RBSOA) Clamped inductive load, L = 300 mH @ 0.8 VCES PC TC = 25C 100 W TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Md Mounting torque (M3) 1.13/10 Nm/lb.in. Features Weight 6g International standard package JEDEC TO-247 AD Maximum lead temperature for soldering 300 C 2nd generation HDMOSTM process 1.6 mm (0.062 in.) from case for 10 s Low VCE(sat) - for low on-state conduction losses High current handling capability Symbol Test Conditions Characteristic Values MOS Gate turn-on (T

See also transistors datasheet: 2G604 , 2G605 , 2H1254 , 2H1255 , 2H1256 , 2H1257 , 2H1258 , 2H1259 , 2N2907 , 2N1000 , 2N1003 , 2N1004 , 2N1005 , 2N1006 , 2N1007 , 2N1008 , 2N1008A .

Keywords

 2N100 Datasheet  2N100 Datenblatt  2N100 RoHS  2N100 Distributor
 2N100 Application Notes  2N100 Component  2N100 Circuit  2N100 Schematic
 2N100 Equivalent  2N100 Cross Reference  2N100 Data Sheet  2N100 Fiche Technique

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