All Transistors Datasheet



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2N100
  2N100
  2N100
 
2N100
  2N100
  2N100
 
2N100
  2N100
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2N100 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N100 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N100

Material of transistor: Ge

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.025

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.005

Maksimalna temperatura (Tj), °C: 50

Transition frequency (ft), MHz: 2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N100 transistor: TO22

2N100 Equivalent Transistors - Cross-Reference Search

2N100 PDF doc:

1.1. fqd2n100_fqu2n100.pdf Size:731K _fairchild_semi

2N100
2N100
January 2009 QFET FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well RoHS Compliant suited for electronic lamp starter and ballast. D D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G D-PAK I-PAK ? ? ? ? ? ? ? ? G S FQD Series FQU Series G D S S Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FQD2N100/FQU2N100 Units VDSS Drain

1.2. ixft10n100_ixft12n100.pdf Size:556K _ixys

2N100
2N100
VDSS ID25 RDS(on) HiPerFETTM ? IXFT 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFT12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ? trr ? ? 250 ns ? ? Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 Case Style VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V G (TAB) VGS Continuous 20 V S VGSM Transient 30 V ID25 TC = 25C 10N100 10 A 12N100 12 A IDM TC = 25C, pulse width limited by TJM 10N100 40 A G = Gate, TAB = Drain 12N100 48 A S = Source, IAR TC = 25C 10N100 10 A 12N100 12 A EAR TC = 25C30 mJ dv/dt IS ? IDM, di/dt ? 100 A/s, VDD ? VDSS, 5 V/ns Features TJ ? 150C, RG = 2 ? International standard package PD TC = 25C 300 W Low RDS (on) HDMOSTM process TJ -55 ... +150 C Rugged polysilicon gate cell TJM 150 C structure Tstg -55 ... +150 C Unclamped Inductive Switching (UIS) rated TL 1.6 mm (0.062 in.) from case fo

1.3. ixga12n100u1_ixgp12n100u1_ixga12n100au1_ixgp12n100au1.pdf Size:116K _ixys

2N100
2N100
VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100U1 1000 V 24 A 3.5 V Combi Pack IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220AB(IXGP) VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263 AA (IXGA) IC25 TC = 25C24 A IC90 TC = 90C12 A ICM TC = 25C, 1 ms 48 A G SSOA VGE = 15 V, TVJ = 125C, RG = 150 W ICM = 24 A E C (TAB) (RBSOA) Clamped inductive load, L = 300 mH @ 0.8 VCES PC TC = 25C 100 W TJ -55 ... +150 C Features TJM 150 C International standard packages Tstg -55 ... +150 C JEDEC TO-220AB and TO-263AA IGBT with antiparallel FRED in one Md Mounting torque with screw M3 0.45/4 Nm/lb.in. package Mounting torque with screw M3.5 0.55/5 Nm/lb.in. Second generation HDMOSTM process Weight 4g Low VCE(sat) - for minimum on-state conduction Maximum lead temperature for soldering 300 C losses 1.6 mm (0.062 in.) fr

1.4. ixfh10n100_ixfm10n100_ixfh12n100_ixfm12n100.pdf Size:570K _ixys

2N100
2N100
VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFH/IXFM 12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode ? ? 250 ns ? ? High dv/dt, Low trr, HDMOSTM Family trr ? Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25C 10N100 10 A 12N100 12 A IDM TC = 25C, pulse width limited by TJM 10N100 40 A TO-204 AA (IXFM) 12N100 48 A IAR TC = 25C 10N100 10 A 12N100 12 A EAR TC = 25C30 mJ dv/dt IS ? IDM, di/dt ? 100 A/s, VDD ? VDSS, 5 V/ns TJ ? 150C, RG = 2 ? G D PD TC = 25C 300 W G = Gate, D = Drain, S = Source, TAB = Drain TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Features TL 1.6 mm (0.062 in.) from case for 10 s 300 C International standard packages Md Mounting torque 1.13/10 Nm/lb.in. Low RDS (on) HDMOSTM process Rugged polysilicon

1.5. ixga12n100_ixgp12n100_ixga12n100a_ixgp12n100a.pdf Size:51K _ixys

2N100
2N100
VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V G VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25C24 A TO-263 (IXGA) IC90 TC = 90C12 A ICM TC = 25C, 1 ms 48 A G SSOA VGE = 15 V, TVJ = 125C, RG = 150 W ICM = 24 A E C (TAB) (RBSOA) Clamped inductive load, L = 300 mH @ 0.8 VCES PC TC = 25C 100 W TJ -55 ... +150 C Features TJM 150 C International standard packages JEDEC TO-220AB and TO-263AA Tstg -55 ... +150 C Second generation HDMOSTM Md Mounting torque with screw M3 0.45/4 Nm/lb.in. process Mounting torque with screw M3.5 0.55/5 Nm/lb.in. Low VCE(sat) Weight 4g - for minimum on-state conduction Maximum lead temperature for soldering 300 C losses 1.6 mm (0.062 in.) from case for 10 s MOS Gate turn-on - drive simplicity Applica

1.6. ixta2n100_ixtp2n100.pdf Size:76K _ixys

2N100
2N100
High Voltage VDSS = 1000 V IXTA 2N100 MOSFET ID25 = 2 A IXTP 2N100 ? RDS(on) = 7 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25C2 A IDM TC = 25C, pulse width limited by TJM 8 A TO-263 AA (IXTA) PD TC = 25C 100 W TJ -55 ... +150 C TJM 150 C G Tstg -55 ... +150 C S D (TAB) Md Mounting torque 1.13/10 Nm/lb.in. Weight 4 g G = Gate, D = Drain, Maximum lead temperature for soldering 300 C S = Source, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Features International standard packages Low RDS (on) HDMOSTM process Symbol Test Conditions Characteristic Values Rugged polysilicon gate cell structure (TJ = 25C, unless otherwise specified) Low package inductance (< 5 nH) min. typ. max. - easy to drive and to protect Fast switching times VDSS VGS = 0 V,

1.7. ixgh12n100_ixgh12n100a.pdf Size:35K _ixys

2N100
2N100
VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V VGES Continuous 20 V C (TAB) G C VGEM Transient 30 V E IC25 TC = 25C24 A G = Gate C = Collector IC90 TC = 90C12 A E = Emitter TAB = Collector ICM TC = 25C, 1 ms 48 A SSOA VGE= 15 V, TVJ = 125C, RG = 150 W ICM = 24 A (RBSOA) Clamped inductive load, L = 300 mH @ 0.8 VCES PC TC = 25C 100 W TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C Md Mounting torque (M3) 1.13/10 Nm/lb.in. Features Weight 6g International standard package JEDEC TO-247 AD Maximum lead temperature for soldering 300 C 2nd generation HDMOSTM process 1.6 mm (0.062 in.) from case for 10 s Low VCE(sat) - for low on-state conduction losses High current handling capability Symbol Test Conditions Characteristic Values MOS Gate turn-on (T

See also transistors datasheet: 2G604 , 2G605 , 2H1254 , 2H1255 , 2H1256 , 2H1257 , 2H1258 , 2H1259 , 2N2907 , 2N1000 , 2N1003 , 2N1004 , 2N1005 , 2N1006 , 2N1007 , 2N1008 , 2N1008A .

Keywords

 2N100 Datasheet  2N100 Datenblatt  2N100 RoHS  2N100 Distributor
 2N100 Application Notes  2N100 Component  2N100 Circuit  2N100 Schematic
 2N100 Equivalent  2N100 Cross Reference  2N100 Data Sheet  2N100 Fiche Technique

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