All Transistors. 2N100 Datasheet

 

2N100 Transistor. Datasheet pdf. Equivalent

Type Designator: 2N100

Material of Transistor: Ge

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.025 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Collector Current |Ic max|: 0.005 A

Max. Operating Junction Temperature (Tj): 50 °C

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO22

2N100 Transistor Equivalent Substitute - Cross-Reference Search

2N100 Datasheet PDF:

1.1. fqd2n100_fqu2n100.pdf Size:731K _fairchild_semi

2N100
2N100

January 2009 QFET FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially tailored to

1.2. ixta2n100_ixtp2n100.pdf Size:76K _ixys

2N100
2N100

High Voltage VDSS = 1000 V IXTA 2N100 MOSFET ID25 = 2 A IXTP 2N100 ? RDS(on) = 7 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25C2 A IDM TC = 25C, pulse width limited by TJM 8 A TO-263 AA (IXT

1.3. ixft10n100_ixft12n100.pdf Size:556K _ixys

2N100
2N100

VDSS ID25 RDS(on) HiPerFETTM ? IXFT 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFT12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ? trr ? ? 250 ns ? ? Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 Case Style VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V G (TAB) VGS

1.4. ixfr10n100q_ixfr12n100q.pdf Size:33K _ixys

2N100
2N100

Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 12N100Q 1000 V 10 A 1.05 W ISOPLUS247TM Q CLASS IXFR 10N100Q 1000 V 9 A 1.20 W (Electrically Isolated Back Surface) trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25°C to 150°C 1000 V

1.5. ixga12n100u1_ixgp12n100u1_ixga12n100au1_ixgp12n100au1.pdf Size:116K _ixys

2N100
2N100

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100U1 1000 V 24 A 3.5 V Combi Pack IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220AB(IXGP) VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263 AA (IXGA) IC25 TC = 25C24 A IC90 TC = 90C12 A ICM TC = 25C, 1 ms

1.6. ixft12n100q_ixfh12n100q_ixft10n100q_ixfh10n100q.pdf Size:144K _ixys

2N100
2N100

VDSS ID25 RDS(on) HiPerFETTM Ω IXFH/IXFT12N100Q 1000 V 12 A 1.05 Ω Ω Ω Ω Power MOSFETs Ω IXFH/IXFT10N100Q 1000 V 10 A 1.20 Ω Ω Ω Ω Q Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS

1.7. ixgh12n100_ixgh12n100a.pdf Size:35K _ixys

2N100
2N100

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V VGES Continuous 20 V C (TAB) G C VGEM Transient 30 V E IC25 TC = 25C24 A G = Gate C = Collector IC90 TC = 90C12 A E = Emitter TAB = Collector

1.8. ixth10n100_ixtm10n100_ixth12n100_ixtm12n100.pdf Size:105K _ixys

2N100
2N100

VDSS ID25 RDS(on) MegaMOSTMFET Ω Ω IXTH / IXTM 10N100 1000 V 10 A 1.20 Ω Ω Ω Ω IXTH / IXTM 12N100 1000 V 12 A 1.05 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C 10N

1.9. ixfh10n100_ixfm10n100_ixfh12n100_ixfm12n100.pdf Size:570K _ixys

2N100
2N100

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFH/IXFM 12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode ? ? 250 ns ? ? High dv/dt, Low trr, HDMOSTM Family trr ? Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V (TAB)

1.10. ixga12n100_ixgp12n100_ixga12n100a_ixgp12n100a.pdf Size:51K _ixys

2N100
2N100

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1000 V VCGR TJ = 25C to 150C; RGE = 1 MW 1000 V G VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25C24 A TO-263 (IXGA) IC90 TC = 90C12 A ICM TC = 25C, 1 ms 48 A G SSOA VGE

1.11. ixgp12n100a.pdf Size:50K _igbt

2N100
2N100

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V G VGES Continuous ±20 V C E VGEM Transient ±30 V IC25 TC = 25°C24 A TO-263 (IXGA) IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A

1.12. ixgh12n100au1.pdf Size:119K _igbt

2N100
2N100

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode High Speed IGBT with Diode IXGH 12N100U1 1000 V 24 A 3.5 V Combi Pack IXGH 12N100AU1 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V C (TAB) G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM

1.13. ixgp12n100.pdf Size:50K _igbt

2N100
2N100

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100 1000 V 24 A 3.5 V IXGA/IXGP12N100A 1000 V 24 A 4.0 V Preliminary Data Sheet TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V G VGES Continuous ±20 V C E VGEM Transient ±30 V IC25 TC = 25°C24 A TO-263 (IXGA) IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A

1.14. ixgp12n100au1.pdf Size:84K _igbt

2N100
2N100

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100U1 1000 V 24 A 3.5 V Combi Pack IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220AB(IXGP) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V G C E VGES Continuous ±20 V VGEM Transient ±30 V TO-263 AA (IXGA) IC25 TC = 25°C24 A IC90 TC = 90°C12 A ICM TC =

1.15. ixgp12n100u1.pdf Size:84K _igbt

2N100
2N100

VCES IC25 VCE(sat) IGBT IXGA/IXGP12N100U1 1000 V 24 A 3.5 V Combi Pack IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220AB(IXGP) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V G C E VGES Continuous ±20 V VGEM Transient ±30 V TO-263 AA (IXGA) IC25 TC = 25°C24 A IC90 TC = 90°C12 A ICM TC =

1.16. ixgp2n100a.pdf Size:83K _igbt

2N100
2N100

VCES IC90 VCE(SAT) High Voltage IGBT IXGP 2N100 1000 V 2.0 A 2.7 V IXGP 2N100A 1000 V 2.0 A 3.5 V Symbol Test Conditions Maximum Ratings TO-220 VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V 1 4 IC25 TC = 25°C 4 A 2 3 IC90 TC = 90°C 2 A ICM TC = 25°C, 1 ms 8 A 1 = Gate 2 = Collector 3 = Emitter 4 =

1.17. ixgh12n100a.pdf Size:34K _igbt

2N100
2N100

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V C (TAB) G C VGEM Transient ±30 V E IC25 TC = 25°C24 A G = Gate C = Collector IC90 TC = 90°C12 A E = Emitter TAB =

1.18. ixgh12n100u1.pdf Size:119K _igbt

2N100
2N100

VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode High Speed IGBT with Diode IXGH 12N100U1 1000 V 24 A 3.5 V Combi Pack IXGH 12N100AU1 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V C (TAB) G C IC25 TC = 25°C24 A E IC90 TC = 90°C12 A ICM

1.19. ixgh12n100.pdf Size:34K _igbt

2N100
2N100

VCES IC25 VCE(sat) Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 1000 V 24 A 3.5 V IXGH 12N100A 1000 V 24 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V C (TAB) G C VGEM Transient ±30 V E IC25 TC = 25°C24 A G = Gate C = Collector IC90 TC = 90°C12 A E = Emitter TAB =

1.20. ixgh32n100a3.pdf Size:120K _igbt

2N100
2N100

Advance Technical Information IXGH32N100A3 VCES = 1000V GenX3TM 1000V IGBT IXGT32N100A3 IC25 = 75A ≤ VCE(sat) ≤ ≤ 2.2V ≤ ≤ Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1000 V G C (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1000 V C E VGES Continuous ± 20 V TO-268 (

1.21. ixgp2n100.pdf Size:83K _igbt

2N100
2N100

VCES IC90 VCE(SAT) High Voltage IGBT IXGP 2N100 1000 V 2.0 A 2.7 V IXGP 2N100A 1000 V 2.0 A 3.5 V Symbol Test Conditions Maximum Ratings TO-220 VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V 1 4 IC25 TC = 25°C 4 A 2 3 IC90 TC = 90°C 2 A ICM TC = 25°C, 1 ms 8 A 1 = Gate 2 = Collector 3 = Emitter 4 =

1.22. ixgt32n100a3.pdf Size:120K _igbt_a

2N100
2N100

Advance Technical Information IXGH32N100A3 VCES = 1000V GenX3TM 1000V IGBT IXGT32N100A3 IC25 = 75A ≤ VCE(sat) ≤ ≤ 2.2V ≤ ≤ Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1000 V G C (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1000 V C E VGES Continuous ± 20 V TO-268 (

1.23. aod2n100.pdf Size:352K _aosemi

2N100
2N100

AOD2N100 1000V,2A N-Channel MOSFET General Description Product Summary The AOD2N100 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver VDS 1100V@150℃ high levels of performance and robustness in popular AC- ID (at VGS=10V) 2A DC applications. RDS(ON) (at VGS=10V) < 9Ω By providing low RDS(on), Ciss and Crss along with guaranteed avala

1.24. sdf12n100.pdf Size:155K _solitron

2N100



1.25. sdf2n100.pdf Size:171K _solitron

2N100



Datasheet: 2G604 , 2G605 , 2H1254 , 2H1255 , 2H1256 , 2H1257 , 2H1258 , 2H1259 , 2N2907 , 2N1000 , 2N1003 , 2N1004 , 2N1005 , 2N1006 , 2N1007 , 2N1008 , 2N1008A .

 


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