BC547C Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC547C

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 200

Collector capacitance (Cc), pF: 4.5

Forward current transfer ratio (hFE), min: 420

Noise Figure, dB: -

Package of BC547C transistor: TO92

BC547C Equivalent Transistors - Cross-Reference Search

BC547C PDF document for downloads:

1.1. bc547b_bc547c.pdf Size:60K _st

BC547B BC547C ® SMALL SIGNAL NPN TRANSISTORS Ordering Code Marking Package / Shipment BC547B BC547B TO-92 / Bulk BC547B-AP BC547B TO-92 / Ammopack BC547C BC547C TO-92 / Bulk BC547C-AP BC547C TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY TO-92 TO-92 BC547B - THE PNP COMPLEMENTARY Bulk Ammopack TYPE IS BC557B APPLICATIONS WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT INTERNAL SCHEMATIC DIAGRAM SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 50 V VCEO Collector-Emitter Voltage (IB = 0) 45 V V Emitter-Base Voltage (I = 0) 6 V EBO C I Collector Current 100 mA C ICM Collector Peak Current (tp < 5 ms) 200 mA Ptot Total Dissipation at TC = 25 oC 500 mW o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C 1/5 March 2003 BC547B / BC547

1.2. bc547_bc547a_bc547b_bc547c.pdf Size:26K _fairchild_semi

Discrete POWER & Signal Technologies BC547 BC547A BC547B BC547C E TO-92 B C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 500 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Cha

5.1. bc546_bc547_bc548.pdf Size:193K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC546/D Amplifier Transistors BC546, B NPN Silicon BC547, A, B, C BC548, A, B, C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 546 547 548 Rating Symbol Unit CASE 29–04, STYLE 17 TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 65 45 30 Vdc Collector–Base Voltage VCBO 80 50 30 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Br

5.2. bc546_bc547_3.pdf Size:53K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC546; BC547 NPN general purpose transistors 1999 Apr 15 Product specification Supersedes data of 1997 Mar 04 Philips Semiconductors Product specification NPN general purpose transistors BC546; BC547 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 collector • General purpose switching and amplification. 1 DESCRIPTION handbook, halfpage 3 2 3 NPN transistor in a TO-92; SOT54 plastic package. 2 PNP complements: BC556 and BC557. 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC546 - 80 V BC547 - 50 V VCEO collector-emitter voltage open base BC546 - 65 V BC547 - 45 V VEBO emitter-base voltage open collector BC546 - 6V BC547 - 6V IC collector c

5.3. bc546_bc547.pdf Size:38K _philips

Phi I i ps Semi c?nduct ?rsPr?duct speci ficat i ?n Phi l i ps Semi conduct ors Product speci ficat i on NPN generaI purp?se t ransi st ?rsBC546; BC547 NPN gener al purpose t ransist orsBC546; BC547 FEATURES PI NNI NG THERMAL CHARACTERI STI CS • Low cur r ent (max. 100mA) PINDESCRI PTI ON SYMBOLPARAMETERCONDI TI ONS VALUE UNI T • Low vol t age (max. 65 V). 1 emi t t er Rthj-a t hermal resi st ance f rom j unct i on t o ambi ent not e 10. 25K/mW 2 base N?t e APPLI CATI ONS 3 col l ect or 1. Transi st or mount ed on an FR4 pri nt ed- ci rcui t board. • General purpose swi t chi ng and ampl i f i cat i on. CHARACTERI STI CS DESCRI PTI ON 1 3 Tj =25 °C unl ess ot her wi se speci fied. 2 3 NPN t ransi st or i n a TO- 92; SOT54 pl ast i c package. SYMBOLPARAMETERCONDI TI ONSMI N. TYP. MAX. UNI T 2 PNPcompl ement s: BC556 and BC557. ICBO col l ect or cut - of f current IE= 0; VCB=30V - - 15 nA 1 IE= 0; VCB=30V; Tj = 150°C - - 5 A IEBO emi t t er cut - of f currentIC

5.4. bc847_bc547_ser.pdf Size:97K _philips

BC847/BC547 series 45 V, 100 mA NPN general-purpose transistors Rev. 07 — 10 December 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in small plastic packages. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC847 SOT23 - TO-236AB BC857 BC847A BC857A BC847B BC857B BC847B/DG - BC847C BC857C BC847W SOT323 SC-70 - BC857W BC847AW BC857AW BC847BW BC857BW BC847BW/DG - BC847CW BC857CW BC847T SOT416 SC-75 - BC857T BC847AT BC857AT BC847AT/DG - BC847BT BC857BT BC847CT BC857CT BC847AM SOT883 SC-101 - BC857AM BC847BM BC857BM BC847CM BC857CM BC547[2] SOT54 SC-43A TO-92 BC557[2] BC547B[2] BC557B[2] BC547C[2] BC557C[2] [1] /DG: halogen-free [2] Also available in SOT54A and SOT54 variant packages (see Section 2). BC847/BC547 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors 1.2 Features Low current Low voltage Three different gain selections 1.3 Applicatio

5.5. bc546_bc547_bc548_bc549_bc550.pdf Size:44K _fairchild_semi

BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC546 80 V : BC547/550 50 V : BC548/549 30 V VCEO Collector-Emitter Voltage : BC546 65 V : BC547/550 45 V : BC548/549 30 V VEBO Emitter-Base Voltage : BC546/547 6 V : BC548/549/550 5 V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA hFE DC Current Gain VCE=5V, IC=2mA 110 800 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 90 250 mV IC=100mA, IB=5mA 200 600 mV VBE (sat)

5.6. bc546_bc547_bc548_to-92.pdf Size:295K _mcc

BC546A/B/C MCC Micro Commercial C omponents TM BC547A/B/C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 BC548A/B/C Fax: (818) 701-4939 Features NPN Silicon • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Amplifier Transistor • Through Hole Package ? • 150 C Junction Temperature 625mW • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 TO-92 A E Mechanical Data • Case: TO-92, Molded Plastic • Polarity:indicated as below B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Symbol Value Unit ge BC546 65 Collector-Emitter Volta C VCEO BC547 45 V BC548 30 Collector-Base Voltage BC546 80 VCBO BC547 50 V BC548 30 D VEBO Emitter-Base Voltage 6.0 V Collector Current(DC) IC 100 mA mW 1-Collector Pd 625 Power Dissipation@TA=25oC 2-Base 5.0 1 mW/oC 2 3-Emitter 3 W G Pd 1.5 Power Dissipation@TC=25oC 12 mW/oC

5.7. bc546b_bc547a-b-c_bc548b-c.pdf Size:72K _onsemi

BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc BC546 65 3 BC547 45 EMITTER BC548 30 Collector - Base Voltage VCBO Vdc BC546 80 BC547 50 BC548 30 TO-92 Emitter - Base Voltage VEBO 6.0 Vdc CASE 29 STYLE 17 Collector Current - Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW 1 1 Derate above 25°C 5.0 mW/°C 2 2 3 3 Total Device Dissipation @ TC = 25°C PD 1.5 W STRAIGHT LEAD BENT LEAD Derate above 25°C 12 mW/°C BULK PACK TAPE & REEL AMMO PACK Operating and Storage Junction TJ, Tstg -55 to +150 °C Temperature Range THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W BC Stresses exceeding Maximum Ratings may damage the device. Ma

5.8. bc546_bc547_bc548.pdf Size:277K _kec

SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C FEATURES ·High Voltage : BC546 VCEO=65V. N DIM MILLIMETERS ·For Complementary With PNP Type BC556/557/558. A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25?) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 BC546 80 M 0.45 MAX Collector-Base N 1.00 VCBO 1 2 3 BC547 50 V Voltage 1. COLLECTOR BC548 30 2. BASE BC546 65 3. EMITTER Collector-Emitter VCEO BC547 45 V Voltage BC548 30 TO-92 BC546 6 Emitter-Base VEBO BC547 6 V Voltage BC548 5 BC546 100 IC Collector Current BC547 100 mA BC548 100 BC546 20 IB Base Current BC547 20 mA BC548 20 BC546 -100 IE Emitter Current BC547 -100 mA BC548 -100 PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range 2008. 4. 16 Revisi

5.9. bc546_bc547_bc548.pdf Size:1074K _wietron

BC546, A/B BC547, A/B/C BC548, A/B/C NPN General Purpose Transistor COLLECTOR 1 TO-92 2 BASE 1 2 3 3 EMITTER Maximum Ratings ( T =25°C unless otherwise noted) A Rating Symbol BC546 BC547 BC548 Unit Collector-Emitter Voltage VECO 65 45 30 Vdc Collector-Base Voltage V 80 50 30 Vdc CBO Emitter-Base Voltage VEBO 6 6 6 Vdc Collector Current Continuous lC 100 mAdc THERMAL CHARACTERISTICS Characteristics Symbol Max Unit BC546 Total Device Dissipation PD BC547 625 mW/ ? C Alumina Substrate, TA = 25? C BC548 BC546 TJ, Tstg Junction and Storage, Temperature BC547 -55 to +150 ? C BC548 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit OFF CHARACTERISTICS BC546 65 V(BR)CEO Collector-Emitter Breakdown Voltage Vdc 45 BC547 (lC= 1 mAdc. lB=0) 30 BC548 BC546 80 Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc BC547 (lC= 100 ? Adc. lE=0) 30 BC548 BC546 Emitter-Base Breakdown Voltage V(BR)EBO BC547 6 Vdc (lE= 10 ? Adc. lC

See also transistors datasheet: BC546B , BC546BP , BC546VI , BC547 , BC547A , BC547AP , BC547B , BC547BP , AC128 , BC547VI , BC548 , BC548A , BC548AP , BC548B , BC548BP , BC548C , BC548CP .

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