BC548 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC548

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 300

Collector capacitance (Cc), pF: 6

Forward current transfer ratio (hFE), min: 110

Noise Figure, dB: -

Package of BC548 transistor: TO92

BC548 Equivalent Transistors - Cross-Reference Search

BC548 PDF document for downloads:

1.1. bc546_bc547_bc548.pdf Size:193K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC546/D Amplifier Transistors BC546, B NPN Silicon BC547, A, B, C BC548, A, B, C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 546 547 548 Rating Symbol Unit CASE 29–04, STYLE 17 TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 65 45 30 Vdc Collector–Base Voltage VCBO 80 50 30 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Br

1.2. bc546_bc547_bc548_bc549_bc550.pdf Size:44K _fairchild_semi

BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC546 80 V : BC547/550 50 V : BC548/549 30 V VCEO Collector-Emitter Voltage : BC546 65 V : BC547/550 45 V : BC548/549 30 V VEBO Emitter-Base Voltage : BC546/547 6 V : BC548/549/550 5 V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA hFE DC Current Gain VCE=5V, IC=2mA 110 800 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 90 250 mV IC=100mA, IB=5mA 200 600 mV VBE (sat)

1.3. bc548_bc548a_bc548b_bc548c.pdf Size:21K _fairchild_semi

Discrete POWER & Signal Technologies BC548 BC548A BC548B BC548C E TO-92 B C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCES Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Cha

1.4. bc546_bc547_bc548_to-92.pdf Size:295K _mcc

BC546A/B/C MCC Micro Commercial C omponents TM BC547A/B/C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 BC548A/B/C Fax: (818) 701-4939 Features NPN Silicon • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Amplifier Transistor • Through Hole Package ? • 150 C Junction Temperature 625mW • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 TO-92 A E Mechanical Data • Case: TO-92, Molded Plastic • Polarity:indicated as below B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Symbol Value Unit ge BC546 65 Collector-Emitter Volta C VCEO BC547 45 V BC548 30 Collector-Base Voltage BC546 80 VCBO BC547 50 V BC548 30 D VEBO Emitter-Base Voltage 6.0 V Collector Current(DC) IC 100 mA mW 1-Collector Pd 625 Power Dissipation@TA=25oC 2-Base 5.0 1 mW/oC 2 3-Emitter 3 W G Pd 1.5 Power Dissipation@TC=25oC 12 mW/oC

1.5. bc546b_bc547a-b-c_bc548b-c.pdf Size:72K _onsemi

BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc BC546 65 3 BC547 45 EMITTER BC548 30 Collector - Base Voltage VCBO Vdc BC546 80 BC547 50 BC548 30 TO-92 Emitter - Base Voltage VEBO 6.0 Vdc CASE 29 STYLE 17 Collector Current - Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW 1 1 Derate above 25°C 5.0 mW/°C 2 2 3 3 Total Device Dissipation @ TC = 25°C PD 1.5 W STRAIGHT LEAD BENT LEAD Derate above 25°C 12 mW/°C BULK PACK TAPE & REEL AMMO PACK Operating and Storage Junction TJ, Tstg -55 to +150 °C Temperature Range THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W BC Stresses exceeding Maximum Ratings may damage the device. Ma

1.6. bc546_bc547_bc548.pdf Size:277K _kec

SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C FEATURES ·High Voltage : BC546 VCEO=65V. N DIM MILLIMETERS ·For Complementary With PNP Type BC556/557/558. A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25?) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 BC546 80 M 0.45 MAX Collector-Base N 1.00 VCBO 1 2 3 BC547 50 V Voltage 1. COLLECTOR BC548 30 2. BASE BC546 65 3. EMITTER Collector-Emitter VCEO BC547 45 V Voltage BC548 30 TO-92 BC546 6 Emitter-Base VEBO BC547 6 V Voltage BC548 5 BC546 100 IC Collector Current BC547 100 mA BC548 100 BC546 20 IB Base Current BC547 20 mA BC548 20 BC546 -100 IE Emitter Current BC547 -100 mA BC548 -100 PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range 2008. 4. 16 Revisi

1.7. bc548-547-546.pdf Size:548K _lge

BC546/BC547/BC548(NPN) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features High Voltage Complement to BC556,BC557,BC558 MAXIMUM RATINGS (TA=25? unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage BC546 80 BC547 50 VCBO V BC548 30 Collector-Emitter Voltage BC546 65 VCEO BC547 45 V BC548 30 Dimensions in inches and (millimeters) 6 VEBO Emitter-Base Voltage V Collector Current -Continuous 100 IC mA Total Device Dissipation 625 PD mW Junction Temperature 150 TJ ? Storage Temperature -55-150 Tstg ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage BC546 80 BC547 VCBO IC= 100?A , IE=0 50 V BC548 30 Collector-emitter breakdown voltage BC546 65 BC547 VCEO IC= 1mA , IB=0 45 V BC548 30 Emitter-base breakdown voltage VEBO IE= 10?A, IC=0 6 V Collector cut-off current BC546 VCB=

1.8. bc546_bc547_bc548.pdf Size:1074K _wietron

BC546, A/B BC547, A/B/C BC548, A/B/C NPN General Purpose Transistor COLLECTOR 1 TO-92 2 BASE 1 2 3 3 EMITTER Maximum Ratings ( T =25°C unless otherwise noted) A Rating Symbol BC546 BC547 BC548 Unit Collector-Emitter Voltage VECO 65 45 30 Vdc Collector-Base Voltage V 80 50 30 Vdc CBO Emitter-Base Voltage VEBO 6 6 6 Vdc Collector Current Continuous lC 100 mAdc THERMAL CHARACTERISTICS Characteristics Symbol Max Unit BC546 Total Device Dissipation PD BC547 625 mW/ ? C Alumina Substrate, TA = 25? C BC548 BC546 TJ, Tstg Junction and Storage, Temperature BC547 -55 to +150 ? C BC548 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit OFF CHARACTERISTICS BC546 65 V(BR)CEO Collector-Emitter Breakdown Voltage Vdc 45 BC547 (lC= 1 mAdc. lB=0) 30 BC548 BC546 80 Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc BC547 (lC= 100 ? Adc. lE=0) 30 BC548 BC546 Emitter-Base Breakdown Voltage V(BR)EBO BC547 6 Vdc (lE= 10 ? Adc. lC

See also transistors datasheet: BC546VI , BC547 , BC547A , BC547AP , BC547B , BC547BP , BC547C , BC547VI , BC548 , BC548A , BC548AP , BC548B , BC548BP , BC548C , BC548CP , BC549 , BC549A .

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