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BC556VI Transistor (IC) Datasheet. Cross Reference Search. BC556VI Equivalent

Type Designator: BC556VI

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc), W: 0.5

Maximum Collector-Base Voltage |Vcb|, V: 80

Maximum Collector-Emitter Voltage |Vce|, V: 65

Maximum Emitter-Base Voltage |Veb|, V: 5

Maximum Collector Current |Ic max|, A: 0.2

Max. Operating Junction Temperature (Tj), °C: 150

Transition Frequency (ft), MHz: 75

Collector Capacitance (Cc), pF: 9

Forward Current Transfer Ratio (hFE), min: 75

Noise Figure, dB: -

Package: TO92

BC556VI Transistor Equivalent Substitute - Cross-Reference Search

BC556VI PDF:

5.1. bc556abk_bc557abk_bc558abk_bc559abk_bc556bbk_bc557bbk_bc558bbk_bc559bbk_bc556cbk_bc557cbk_bc558cbk_bc559cbk.pdf Size:80K _update

BC556VI
BC556VI

BC556xBK ... BC559xBK BC556xBK ... BC559xBK General Purpose Si-Epitaxial PlanarTransistors PNP PNP Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2009-12-07 ±0.1 Power dissipation – Verlustleistung 500 mW 4.6 Plastic case TO-92 Kunststoffgehäuse (10D3) Weight approx. – Gewicht ca. 0.18 g C B E Plastic material has UL classification 94V-0 Gehäusematerial

5.2. bc556_bc557_bc558_2.pdf Size:220K _motorola

BC556VI
BC556VI

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC BC BC 3 556 557 558 Rating Symbol Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 65 45 30 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 80 50 30 Vdc EmitterBase Voltage VEBO

5.3. bc556_bc557_bc558.pdf Size:159K _motorola

BC556VI
BC556VI

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC BC BC 3 556 557 558 Rating Symbol Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 65 45 30 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 80 50 30 Vdc EmitterBase Voltage VEBO

5.4. bc556_bc557.pdf Size:246K _philips

BC556VI
BC556VI

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC556; BC557 PNP general purpose transistors Product data sheet 2004 Oct 11 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet PNP general purpose transistors BC556; BC557 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 collector

5.5. bc556_bc557_3.pdf Size:53K _philips

BC556VI
BC556VI

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC556; BC557 PNP general purpose transistors 1999 Apr 15 Product specification Supersedes data of 1997 Mar 27 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 coll

5.6. bc556_bc557_bc558_bc559_bc560.pdf Size:43K _fairchild_semi

BC556VI
BC556VI

BC556/557/558/559/560 Switching and Amplifier High Voltage: BC556, VCEO= -65V Low Noise: BC559, BC560 Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC556 -80 V : BC557/560 -50 V : BC558/559 -30 V VCEO Col

5.7. bc556b_bc557a-b-c_bc558b.pdf Size:81K _onsemi

BC556VI
BC556VI

BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon http://onsemi.com Features Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 3 BC556 -65 EMITTER BC557 -45 BC558 -30 Collector - Base Voltage VCBO Vdc BC556 -80 BC557 -50 BC558 -30 TO-92 Emitter - Base Voltage VEBO -5.0 Vdc CASE 29

5.8. sbc556.pdf Size:93K _auk

BC556VI
BC556VI

SBC556 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-55V • Complementary pair with SBC546 Ordering Information Type NO. Marking Package Code SBC556 SBC556 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1

5.9. bc556-557-558.pdf Size:308K _secos

BC556VI
BC556VI

BC556, B, C BC557, A, B, C Elektronische Bauelemente BC558, A, B, C RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 PNP Transistor FEATURES Power dissipation PCM: 0.625 W (Tamb=25?) Collector current ICM: - 0.1 A 1 Collector-base voltage 2 3 VCBO: BC556 -80 V BC557 -50 V 1 2 3 BC558 -30 V Operating and storage junction temperatu

5.10. bc556_bc557_bc558.pdf Size:353K _cdil

BC556VI
BC556VI

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC556, A, B, PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC557, A, B, C BC558, A, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with E B "T" C Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC556 BC557 BC558 UNITS Collector Emitter

5.11. bc556_bc557_bc558.pdf Size:274K _kec

BC556VI
BC556VI

SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C FEATURES For Complementary With NPN Type BC546/547/548. N DIM MILLIMETERS A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 BC556 -80 K 0.55 MAX

5.12. bc556-557-558.pdf Size:573K _lge

BC556VI
BC556VI

BC556/557/558(PNP) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features High Voltage Complement to BC546/BC547/BC548 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage BC556 -80 VCBO BC557 -50 V BC558 -30 -65 -45 V VCEO Collector-Emitter Voltage -30 Dimensions in inches and (millimeters) V

5.13. bc556_bc557_bc558.pdf Size:2241K _wietron

BC556VI
BC556VI

BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 P b Lead(Pb)-Free 2 BASE 1 2 3 1 EMITTER TO-92 Maximum Ratings ? ( T =25 C unless otherwise noted) A Rating Symbol BC556 BC557 BC558 Unit V -65 -45 Collector-Emitter Voltage ECO -30 V -30 V Collector-Base Voltage CBO -80 -50 V V EBO Emitter-Base Voltage -5 -5 -5 V l 100 Collector Current Co

5.14. bc556-558.pdf Size:2019K _kexin

BC556VI
BC556VI

DIP Type Transistors PNP Transistors BC556 ~ BC558 (KC556 ~ KC558) Unit:mm TO-92 4.8 ± 0.3 3.8 ± 0.3 ■ Features ● Collector Current Capability IC=-0.1A ● Collector Emitter Voltage VCEO=-65V/-45V/-30V 0.60 Max 0.45 ± 0.1 0.5 COLLECTOR 1 2 1 3 2 1.Collector BASE 2.Base 1.27 3.Emitter 2.54 3 EMITTER ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol BC556

See also transistors datasheet: BC550C , BC550CP , BC551 , BC556 , BC556A , BC556AP , BC556B , BC556BP , 2N2907 , BC557 , BC557A , BC557AP , BC557B , BC557BP , BC557C , BC557VI , BC558 .

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