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BC557
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BC557
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List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
BC557 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BC557 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC557

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 75

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 75

Noise Figure, dB: -

Package of BC557 transistor: X10

BC557 Equivalent Transistors - Cross-Reference Search

BC557 PDF doc:

1.1. bc556_bc557_bc558_2.pdf Size:220K _motorola

BC557
BC557
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC BC BC 3 556 557 558 Rating Symbol Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO –65 –45 –30 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO –80 –50 –30 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdo

1.2. bc556_bc557_bc558.pdf Size:159K _motorola

BC557
BC557
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC BC BC 3 556 557 558 Rating Symbol Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO –65 –45 –30 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO –80 –50 –30 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdo

1.3. bc556_bc557.pdf Size:246K _philips

BC557
BC557
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC556; BC557 PNP general purpose transistors Product data sheet 2004 Oct 11 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet PNP general purpose transistors BC556; BC557 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 collector • General purpose switching and amplification. DESCRIPTION 1 handbook, halfpage 3 2 PNP transistor in a TO-92; SOT54 plastic package. 3 2 NPN complements: BC546 and BC547. 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BC556 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 BC557 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC556 - -80 V BC557 - -

1.4. bc556_bc557_3.pdf Size:53K _philips

BC557
BC557
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC556; BC557 PNP general purpose transistors 1999 Apr 15 Product specification Supersedes data of 1997 Mar 27 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 collector • General purpose switching and amplification. DESCRIPTION 1 handbook, halfpage 3 2 PNP transistor in a TO-92; SOT54 plastic package. 3 2 NPN complements: BC546 and BC547. 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC556 --80 V BC557 --50 V VCEO collector-emitter voltage open base BC556 --65 V BC557 --45 V VEBO emitter-base voltage open collector --5V IC collector current (DC) --100 m

1.5. bc557b.pdf Size:70K _st

BC557
BC557
BC557B ® SMALL SIGNAL PNP TRANSISTOR Ordering Code Marking Package / Shipment BC557B BC557B TO-92 / Bulk BC557B-AP BC557B TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS BC547B TO-92 TO-92 Bulk Ammopack APPLICATIONS WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -50 V VCEO Collector-Emitter Voltage (IB = 0) -45 V V Emitter-Base Voltage (I = 0) -5 V EBO C I Collector Current -100 mA C ICM Collector Peak Current (tp < 5 ms) -200 mA Ptot Total Dissipation at TC = 25 oC 500 mW o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C 1/5 March 2003 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) BC557B

1.6. bc556_bc557_bc558_bc559_bc560.pdf Size:43K _fairchild_semi

BC557
BC557
BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC556 -80 V : BC557/560 -50 V : BC558/559 -30 V VCEO Collector-Emitter Voltage : BC556 -65 V : BC557/560 -45 V : BC558/559 -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA hFE DC Current Gain VCE= -5V, IC=2mA 110 800 VCE Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -90 -300 mV (sat) IC= -100mA, IB= -5mA -250 -650 mV VBE (sat) Coll

1.7. bc556b_bc557a-b-c_bc558b.pdf Size:81K _onsemi

BC557
BC557
BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon http://onsemi.com Features • Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 3 BC556 -65 EMITTER BC557 -45 BC558 -30 Collector - Base Voltage VCBO Vdc BC556 -80 BC557 -50 BC558 -30 TO-92 Emitter - Base Voltage VEBO -5.0 Vdc CASE 29 STYLE 17 Collector Current - Continuous IC -100 mAdc Collector Current - Peak ICM -200 1 1 2 2 Base Current - Peak IBM -200 mAdc 3 3 STRAIGHT LEAD BENT LEAD Total Device Dissipation @ TA = 25°C PD 625 mW BULK PACK TAPE & REEL Derate above 25°C 5.0 mW/°C AMMO PACK Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C MARKING DIAGRAM Operating and Storage Junction TJ, Tstg -55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit BC 55xx Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W AYWW G Thermal Resistance, Junct

1.8. sbc557.pdf Size:94K _auk

BC557
BC557
SBC557 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with SBC547 Ordering Information Type NO. Marking Package Code SBC557 SBC557 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Collector 2. Base 3. Emitter KST-2010-000 1 4.5 ± 0.1 14.0 ± 0.40 0.38 1.20 ± 0.1 SBC557 Absolute maximum ratings (Ta=25° °C) ° ° Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -45 V Emitter-Base voltage VEBO -5 V Collector current IC -100 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25° °C) ° ° Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter breakdown volt

1.9. bc556_bc557_bc558.pdf Size:353K _cdil

BC557
BC557
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC556, A, B, PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC557, A, B, C BC558, A, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with E B "T" C Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC556 BC557 BC558 UNITS Collector Emitter Voltage VCEO 65 45 30 V Collector Emitter Voltage VCES 80 50 30 V Collector Base Voltage VCBO 80 50 30 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 100 mA Collector Current Peak ICM 200 mA Base Current Peak IBM 200 mA Emitter Current Peak IEM 200 mA Power Dissipation at Ta=25?C PD 500 mW Derate Above 25?C 4.0 mW/?C Storage Temperature Tstg - 65 to +150 ?C Junction Temperature Tj 150 ?C THERMAL RESISTANCE Junction to Ambient in free air Rth (j-a) 250 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION BC556 B

1.10. bc556_bc557_bc558.pdf Size:274K _kec

BC557
BC557
SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C FEATURES For Complementary With NPN Type BC546/547/548. N DIM MILLIMETERS A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 BC556 -80 K 0.55 MAX F F L 2.30 Collector-Base VCBO BC557 -50 V M 0.45 MAX Voltage N 1.00 1 2 3 BC558 -30 1. COLLECTOR BC556 -65 2. BASE Collector-Emitter 3. EMITTER VCEO BC557 -45 V Voltage BC558 -30 TO-92 BC556 -5 Emitter-Base VEBO BC557 -5 V Voltage BC558 -5 BC556 -100 IC Collector Current BC557 -100 mA BC558 -100 BC556 100 IE Emitter Current BC557 100 mA BC558 100 PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 1998. 10. 8 Revision No : 3 1/3 A J C L M BC556/7/8 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHAR

1.11. bc556_bc557_bc558.pdf Size:2241K _wietron

BC557
BC557
BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 P b Lead(Pb)-Free 2 BASE 1 2 3 1 EMITTER TO-92 Maximum Ratings ? ( T =25 C unless otherwise noted) A Rating Symbol BC556 BC557 BC558 Unit V -65 -45 Collector-Emitter Voltage ECO -30 V -30 V Collector-Base Voltage CBO -80 -50 V V EBO Emitter-Base Voltage -5 -5 -5 V l 100 Collector Current Continuous C mA THERMAL CHARACTERISTICS Charact er ist ics Symbol Max Unit Total Device Dissipation BC556 Alumina Substrate,T =25°C PD A BC557 625 mW/°C BC558 Junction and Storage, Temperature BC556 TJ, Tstg -55 to +150 BC557 °C BC558 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BC556 -65 (lC=2mA, lB=0) V V (BR)CEO -45 BC557 -30 BC558 BC556 -80 Collector-Base Breakdown Voltage (lC=100?A, lE=0) V -50 BC557 V (BR)CBO -30 BC558 Emitter-Base Breakdown Voltage BC556 (lE=100?A, lC=0) BC5

See also transistors datasheet: BC550CP , BC551 , BC556 , BC556A , BC556AP , BC556B , BC556BP , BC556VI , BC558 , BC557A , BC557AP , BC557B , BC557BP , BC557C , BC557VI , BC558 , BC558A .

Keywords

 BC557 Datasheet  BC557 Datenblatt  BC557 RoHS  BC557 Distributor
 BC557 Application Notes  BC557 Component  BC557 Circuit  BC557 Schematic
 BC557 Equivalent  BC557 Cross Reference  BC557 Data Sheet  BC557 Fiche Technique

 

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