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  BC558
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BC558
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BC558
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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS3060
HEPS3061 .. HSE149
HSE150 .. IR1000
IR1001 .. K2110A
K2110B .. KRA223M
KRA223S .. KRC120M
KRC120S .. KRC881T
KRC882T .. KSB798
KSB810 .. KSC5022-Y
KSC5023 .. KSE171
KSE172 .. KT215D9
KT215E9 .. KT351B
KT352A .. KT657B-2
KT657V-2 .. KT8183B
KT8183B-1 .. KT920B
KT920G .. KTC3194
KTC3195 .. KTX511T
KTX512T .. MD1T3251
MD2001FX .. MJ15018
MJ15019 .. MJE13006
MJE13007 .. MJF6688
MJH10012 .. MMBT200A
MMBT2131 .. MMBTA70L
MMBTA70LT1 .. MP1555A
MP1556 .. MP8133
MP8134 .. MPS3906
MPS3906R .. MQ1613R
MQ1711 .. MT3S19
MT3S19R .. NA22FG
NA22FH .. NB021HZ
NB022E .. NB221EH
NB221EI .. NKT270
NKT271 .. NR431FR
NR431FS .. NTE2554
NTE2555 .. P2N2222A
P2N2369 .. PDTA123EE
PDTA123EM .. PMD19K100
PMD19K200 .. PTB20071
PTB20074 .. RCA9201
RCA9201A .. RN1911FE
RN1911FS .. RN2965FE
RN2965FS .. S790T
S791T .. SF016
SF018 .. SMBT2369
SMBT2369A .. SRC1210EF
SRC1210M .. STL128DN
STL72 .. T1447
T1472 .. TD13005
TD13005-SMD .. TIP34BF
TIP34C .. TIX813
TIX814 .. TN5857
TN5858 .. TRF453A
TRF455 .. UN2117R
UN2117S .. UPT523
UPT524 .. ZTX108L
ZTX108M .. ZTX602
ZTX603 .. ZXTPS720MC
 
BC558 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

BC558 Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC558

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 75

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 75

Noise Figure, dB: -

Package of BC558 transistor: TO92

BC558 Equivalent Transistors - Cross-Reference Search

BC558 PDF doc:

1.1. bc556_bc557_bc558_2.pdf Size:220K _motorola

BC558
BC558
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC BC BC 3 556 557 558 Rating Symbol Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO –65 –45 –30 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO –80 –50 –30 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdo

1.2. bc556_bc557_bc558.pdf Size:159K _motorola

BC558
BC558
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC BC BC 3 556 557 558 Rating Symbol Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO –65 –45 –30 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO –80 –50 –30 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdo

1.3. bc556_bc557_bc558_bc559_bc560.pdf Size:43K _fairchild_semi

BC558
BC558
BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC556 -80 V : BC557/560 -50 V : BC558/559 -30 V VCEO Collector-Emitter Voltage : BC556 -65 V : BC557/560 -45 V : BC558/559 -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA hFE DC Current Gain VCE= -5V, IC=2mA 110 800 VCE Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -90 -300 mV (sat) IC= -100mA, IB= -5mA -250 -650 mV VBE (sat) Coll

1.4. bc556b_bc557a-b-c_bc558b.pdf Size:81K _onsemi

BC558
BC558
BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon http://onsemi.com Features • Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 3 BC556 -65 EMITTER BC557 -45 BC558 -30 Collector - Base Voltage VCBO Vdc BC556 -80 BC557 -50 BC558 -30 TO-92 Emitter - Base Voltage VEBO -5.0 Vdc CASE 29 STYLE 17 Collector Current - Continuous IC -100 mAdc Collector Current - Peak ICM -200 1 1 2 2 Base Current - Peak IBM -200 mAdc 3 3 STRAIGHT LEAD BENT LEAD Total Device Dissipation @ TA = 25°C PD 625 mW BULK PACK TAPE & REEL Derate above 25°C 5.0 mW/°C AMMO PACK Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C MARKING DIAGRAM Operating and Storage Junction TJ, Tstg -55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit BC 55xx Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W AYWW G Thermal Resistance, Junct

1.5. sbc558.pdf Size:94K _auk

BC558
BC558
SBC558 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-30V • Complementary pair with SBC548 Ordering Information Type NO. Marking Package Code SBC558 SBC558 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Collector 2. Base 3. Emitter KST-9029-000 1 4.5 ± 0.1 14.0 ± 0.40 0.38 1.20 ± 0.1 SBC558 Absolute maximum ratings (Ta=25° °C) ° ° Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -30 V Collector-Emitter voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector current IC -100 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25° °C) ° ° Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter breakdown volt

1.6. bc556_bc557_bc558.pdf Size:353K _cdil

BC558
BC558
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC556, A, B, PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC557, A, B, C BC558, A, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with E B "T" C Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC556 BC557 BC558 UNITS Collector Emitter Voltage VCEO 65 45 30 V Collector Emitter Voltage VCES 80 50 30 V Collector Base Voltage VCBO 80 50 30 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 100 mA Collector Current Peak ICM 200 mA Base Current Peak IBM 200 mA Emitter Current Peak IEM 200 mA Power Dissipation at Ta=25?C PD 500 mW Derate Above 25?C 4.0 mW/?C Storage Temperature Tstg - 65 to +150 ?C Junction Temperature Tj 150 ?C THERMAL RESISTANCE Junction to Ambient in free air Rth (j-a) 250 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION BC556 B

1.7. bc556_bc557_bc558.pdf Size:274K _kec

BC558
BC558
SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C FEATURES For Complementary With NPN Type BC546/547/548. N DIM MILLIMETERS A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 BC556 -80 K 0.55 MAX F F L 2.30 Collector-Base VCBO BC557 -50 V M 0.45 MAX Voltage N 1.00 1 2 3 BC558 -30 1. COLLECTOR BC556 -65 2. BASE Collector-Emitter 3. EMITTER VCEO BC557 -45 V Voltage BC558 -30 TO-92 BC556 -5 Emitter-Base VEBO BC557 -5 V Voltage BC558 -5 BC556 -100 IC Collector Current BC557 -100 mA BC558 -100 BC556 100 IE Emitter Current BC557 100 mA BC558 100 PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 1998. 10. 8 Revision No : 3 1/3 A J C L M BC556/7/8 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHAR

1.8. bc556_bc557_bc558.pdf Size:2241K _wietron

BC558
BC558
BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 P b Lead(Pb)-Free 2 BASE 1 2 3 1 EMITTER TO-92 Maximum Ratings ? ( T =25 C unless otherwise noted) A Rating Symbol BC556 BC557 BC558 Unit V -65 -45 Collector-Emitter Voltage ECO -30 V -30 V Collector-Base Voltage CBO -80 -50 V V EBO Emitter-Base Voltage -5 -5 -5 V l 100 Collector Current Continuous C mA THERMAL CHARACTERISTICS Charact er ist ics Symbol Max Unit Total Device Dissipation BC556 Alumina Substrate,T =25°C PD A BC557 625 mW/°C BC558 Junction and Storage, Temperature BC556 TJ, Tstg -55 to +150 BC557 °C BC558 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BC556 -65 (lC=2mA, lB=0) V V (BR)CEO -45 BC557 -30 BC558 BC556 -80 Collector-Base Breakdown Voltage (lC=100?A, lE=0) V -50 BC557 V (BR)CBO -30 BC558 Emitter-Base Breakdown Voltage BC556 (lE=100?A, lC=0) BC5

See also transistors datasheet: BC556VI , BC557 , BC557A , BC557AP , BC557B , BC557BP , BC557C , BC557VI , 2N4401 , BC558A , BC558AP , BC558B , BC558BP , BC558C , BC558CP , BC558VI , BC559 .

Keywords

 BC558 Datasheet  BC558 Datenblatt  BC558 RoHS  BC558 Distributor
 BC558 Application Notes  BC558 Component  BC558 Circuit  BC558 Schematic
 BC558 Equivalent  BC558 Cross Reference  BC558 Data Sheet  BC558 Fiche Technique

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