BC559B Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC559B

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 75

Collector capacitance (Cc), pF: 7

Forward current transfer ratio (hFE), min: 240

Noise Figure, dB: -

Package of BC559B transistor: TO226

BC559B Equivalent Transistors - Cross-Reference Search

BC559B PDF document for downloads:

5.1. bc559_bc560.pdf Size:107K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC559/D Low Noise Transistors PNP Silicon BC559, B, C BC560C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC559 BC560 Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO –30 –45 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO –30 –50 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO Vdc (I

5.2. bc559_4.pdf Size:49K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC559 PNP general purpose transistor 1999 May 28 Product specification Supersedes data of 1997 Jun 03 Philips Semiconductors Product specification PNP general purpose transistor BC559 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 30 V). 1 emitter 2 base APPLICATIONS 3 collector • General purpose switching and amplification. 1 handbook, halfpage 3 DESCRIPTION 2 3 PNP transistor in a TO-92 (SOT54) plastic package. 2 NPN complement: BC549. 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --30 V VCEO collector-emitter voltage open base --30 V VEBO emitter-base voltage open collector --5 V IC collector current (DC) --100 mA ICM peak collector current --200 mA IBM peak base current --20

5.3. bc556_bc557_bc558_bc559_bc560.pdf Size:43K _fairchild_semi

BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC556 -80 V : BC557/560 -50 V : BC558/559 -30 V VCEO Collector-Emitter Voltage : BC556 -65 V : BC557/560 -45 V : BC558/559 -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA hFE DC Current Gain VCE= -5V, IC=2mA 110 800 VCE Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -90 -300 mV (sat) IC= -100mA, IB= -5mA -250 -650 mV VBE (sat) Coll

5.4. bc559.pdf Size:125K _onsemi

BC559 Low Noise Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit http://onsemi.com Collector-Emitter Voltage VCEO -30 -45 Vdc Collector-Base Voltage VCBO -30 -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current — Continuous IC -100 mAdc Total Device Dissipation @ PD mW 1 TA = 25°C 625 2 3 Derate above 25°C 5.0 mW/°C Total Device Dissipation @ PD Watt CASE 29-04, STYLE 17 TC = 25°C 1.5 TO-92 (TO-226AA) Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg -55 to +150 °C Temperature Range COLLECTOR THERMAL CHARACTERISTICS 1 Characteristic Symbol Max Unit 2 Thermal Resistance, Junction to RqJA 200 °C/W BASE Ambient Thermal Resistance, Junction to RqJC 83.3 °C/W 3 Case EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO Vdc (IC = -10 mAdc, IB = 0) BC559 -30 — — BC560 -45 — — Collector-Ba

5.5. bc559_bc560.pdf Size:28K _kec

SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. B C FEATURE For Complementary with NPN Type BC549/550. N DIM MILLIMETERS A 4.70 MAX E K G B 4.80 MAX MAXIMUM RATING (Ta=25 ) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 BC559 -30 G 0.85 VCBO Collector-Base Voltage V H 0.45 BC560 -50 _ H J 14.00 + 0.50 K 0.55 MAX F F BC559 -30 L 2.30 VCEO Collector-Emitter Voltage V M 0.45 MAX N 1.00 BC560 -45 1 2 3 VEBO Emitter-Base Voltage -5 V 1. COLLECTOR 2. BASE IC Collector Current -100 mA 3. EMITTER PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 TO-92 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT BC559 -30 - - Collector-Emitter V(BR)CEO IC=-10mA, IB=0 V Breakdown Voltage BC560 -45 - - BC559 -30 - - Collector-Base V(BR)CBO IC=-10 A, IE=0 V Breakdown Voltage BC560 -5

See also transistors datasheet: BC558B , BC558BP , BC558C , BC558CP , BC558VI , BC559 , BC559A , BC559AP , SS8050 , BC559BP , BC559C , BC559CP , BC560 , BC560A , BC560AP , BC560B , BC560BP .

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