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BC560A Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC560A

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 4.5

Forward current transfer ratio (hFE), min: 125

Noise Figure, dB: -

Package of BC560A transistor: TO92

BC560A Equivalent Transistors - Cross-Reference Search

BC560A PDF doc:

5.1. bc559_bc560.pdf Size:107K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC559/D Low Noise Transistors PNP Silicon BC559, B, C BC560C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC559 BC560 Unit CASE 29–04, STYLE 17 Collector–Emitter Voltage VCEO –30 –45 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO –30 –50 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO Vdc (I

5.2. bc556_bc557_bc558_bc559_bc560.pdf Size:43K _fairchild_semi

BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC556 -80 V : BC557/560 -50 V : BC558/559 -30 V VCEO Collector-Emitter Voltage : BC556 -65 V : BC557/560 -45 V : BC558/559 -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA hFE DC Current Gain VCE= -5V, IC=2mA 110 800 VCE Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -90 -300 mV (sat) IC= -100mA, IB= -5mA -250 -650 mV VBE (sat) Coll

5.3. bc559_bc560.pdf Size:28K _kec

SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. B C FEATURE For Complementary with NPN Type BC549/550. N DIM MILLIMETERS A 4.70 MAX E K G B 4.80 MAX MAXIMUM RATING (Ta=25 ) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 BC559 -30 G 0.85 VCBO Collector-Base Voltage V H 0.45 BC560 -50 _ H J 14.00 + 0.50 K 0.55 MAX F F BC559 -30 L 2.30 VCEO Collector-Emitter Voltage V M 0.45 MAX N 1.00 BC560 -45 1 2 3 VEBO Emitter-Base Voltage -5 V 1. COLLECTOR 2. BASE IC Collector Current -100 mA 3. EMITTER PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 TO-92 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT BC559 -30 - - Collector-Emitter V(BR)CEO IC=-10mA, IB=0 V Breakdown Voltage BC560 -45 - - BC559 -30 - - Collector-Base V(BR)CBO IC=-10 A, IE=0 V Breakdown Voltage BC560 -5

See also transistors datasheet: BC559 , BC559A , BC559AP , BC559B , BC559BP , BC559C , BC559CP , BC560 , AC187 , BC560AP , BC560B , BC560BP , BC560C , BC560CP , BC582A , BC582B , BC583 .

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