BC848A Transistor Datasheet. Parameters and Characteristics.

Type Designator: BC848A

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.25

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 300

Collector capacitance (Cc), pF: 6

Forward current transfer ratio (hFE), min: 180

Noise Figure, dB: -

Package of BC848A transistor: SOT23

BC848A Equivalent Transistors - Cross-Reference Search

BC848A PDF document for downloads:

1.1. bc846alt_bc847alt_bc848alt_bc849alt_bc850alt.pdf Size:220K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846ALT1/D BC846ALT1,BLT1 General Purpose Transistors BC847ALT1, NPN Silicon COLLECTOR BLT1,CLT1 thru 3 BC850ALT1,BLT1, 1 CLT1 BASE BC846, BC847 and BC848 are Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS BC847 BC848 BC850 BC849 Rating Symbol BC846 Unit 3 Collector–Emitter Voltage VCEO 65 45 30 V 1 Collector–Base Voltage VCBO 80 50 30 V 2 Emitter–Base Voltage VEBO 6.0 6.0 5.0 V Collector Current — Continuous IC 100 100 100 mAdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board, (1) PD TA = 25°C 225 mW Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD Alumina Substrate, (2) TA = 25°C 300 mW Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKIN

1.2. bc846awt_bc847awt_bc848awt_bc849awt_bc850awt.pdf Size:207K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846AWT1/D General Purpose Transistors BC846AWT1,BWT1 NPN Silicon BC847AWT1,BWT1, COLLECTOR CWT1 These transistors are designed for general purpose amplifier 3 BC848AWT1,BWT1, applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. CWT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit 3 Collector–Emitter Voltage VCEO 65 45 30 V Collector–Base Voltage VCBO 80 50 30 V 1 2 Emitter–Base Voltage VEBO 6.0 6.0 5.0 V CASE 419–02, STYLE 3 Collector Current — Continuous IC 100 100 100 mAdc SOT–323/SC–70 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board, (1) PD 150 mW TA = 25°C Thermal Resistance, Junction to Ambient RqJA 833 °C/W Total Device Dissipation PD 2.4 mW/°C Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E

1.3. bc846aw-bw_bc847aw-bw-cw_bc848aw-bw-cw_sot-323.pdf Size:666K _mcc

MCC BC846AW/BW Micro Commercial Components Micro Commercial Components BC847AW/BW/CW 20736 Marilla Street Chatsworth CA 91311 BC848AW/BW/CW Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) • Low current (max. 100mA) General Purpose • Low voltage (max. 65V) • Epoxy meets UL 94 V-0 flammability rating Transistors • Moisure Sensitivity Level 1 Maximum Ratings • Operating temperature : -65 to +150 SOT-323 • Storage temperature : -65 to +150 A • Thermal resistance from junction to ambient*: 625K/W D C • Marking: BC846AW---1A ; BC846BW---1B BC847AW---1E ; BC847BW---1F ; BC847CW---1G C B BC848AW---1JS/1J ; BC848BW---1KS/1K ; BC848CW---1LS/1L B E Electrical Characteristics @ 25 Unless Otherwise Specified F E Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CBO Collector-Base Breakdown Voltage Vdc G H J (IC=10uAdc, IE=0) BC846AW/

1.4. bc846a-bc847a-bc848a.pdf Size:302K _secos

BC846A, B BC847A, B, C Elektronische Bauelemente BC848A, B, C A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES A Dim Min Max L n A 2.800 3.040 General Purpose Transistor NPN Type n 3 B 1.200 1.400 Collect current : 0.1A S Top View O O B n C 0.890 1.110 Operating Temp. : -55 C ~ +150 C 1 2 n D 0.370 0.500 RoHS compliant product V G G 1.780 2.040 H 0.013 0.100 COLLE C TOR C 3 J 0.085 0.177 3 K 0.450 0.600 H J D K 1 L 0.890 1.020 1 BAS E 2 S 2.100 2.500 V 0.450 0.600 2 All Dimension in mm E MITTE R ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage BC846 80 BC847 VCBO 50 V Ic= 10 A IE=0 BC848 30 Collector-emitter breakdown voltage BC846 65 BC847 VCEO Ic= 10 mA IB=0 45 V BC848 30 Emitter-base breakdown voltage VEBO IE= 10 A IC=0 6 V Collector cut-off current BC846 VCB= 70 V , IE=0 BC847 ICBO VCB= 50 V , IE=0 0.1 A B

1.5. bc846aw_bc847aw_bc848aw.pdf Size:2832K _wietron

BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW General Purpose Transistor COLLECTOR 3 3 NPN Silicon P b Lead(Pb)-Free 1 1 2 BASE 2 EMITTER SOT-323(SC-70) Maximum Ratings (T =25°C Unlesso therwise noted) A Rating Symbol Value Unit Collector-Emitter Voltage BC846 65 45 V BC847 CEO V 30 BC848 Collector-Base Voltage BC846 80 V V BC847 CBO 50 BC848 30 Emitter-Base Voltage BC846 6.0 V BC847 V 6.0 EBO BC848 5.0 Collector Current-Continuous I 100 mA C Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board (Note.1) TA=25°C P 150 mW D Derate above 25°C 2.4 mW/°C Thermal Resistance, Junctionto Ambient (Note.1) R 833 °C/W ?JA Junctionand Temperature Range T +150 °C J Storage Temperature Range Tstg -55 to +150 °C Device Marking BC846AW=1A; BC846BW=1B; BC847AW=1E; BC847BW=1F BC847CW=1G; BC848AW=1J; BC848BW;=1K; BC848CW=1L 1. FR-5=1.0 x 0.75 x 0.062 in. W E I T R O N 1/4 Rev.B 12-Dec-06 h t t p : / / w w w

See also transistors datasheet: BC847C , BC847CLT1 , BC847CR , BC847CW , BC847CWT1 , BC847PN , BC847S , BC848 , 2N5551 , BC848A , BC848A , BC848A , BC848A , BC848A , BC848ALT1 , BC848AR , BC848AW .

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