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2N2780 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N2780

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 200

Maximum collector-base voltage |Ucb|, V: 300

Maximum collector-emitter voltage |Uce|, V: 300

Maximum emitter-base voltage |Ueb|, V: 15

Maximum collector current |Ic max|, A: 30

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 0.5

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of 2N2780 transistor: TO61

2N2780 Equivalent Transistors - Cross-Reference Search

2N2780 PDF document for downloads:

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See also transistors datasheet: 2N2774 , 2N2775 , 2N2776 , 2N2777 , 2N2778 , 2N2779 , 2N277A , 2N278 , 2N5133 , 2N2781 , 2N2782 , 2N2783 , 2N2784 , 2N2784-46 , 2N2785 , 2N2786 , 2N2786A .

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